公开(公告)号：US20090180508A1

公开(公告)日：2009-07-16

申请号：US12269583

申请日：2008-11-12

申请人： Kouji MAKITA ,  Takayuki Kashima

发明人： Kouji MAKITA ,  Takayuki Kashima

IPC分类号： H01S5/00 ,  H01L21/00

CPC分类号： H01S5/4031 ,  B82Y20/00 ,  H01S5/162 ,  H01S5/2004 ,  H01S5/2201 ,  H01S5/2231 ,  H01S5/3202 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/4087 ,  H01S2301/185

摘要： A two-wavelength semiconductor laser device includes a first semiconductor laser device including a first-conductivity type first cladding layer, a first guide layer made of AlGaAs mixed crystal, a first quantum well active layer having a barrier layer made of AlGaAs mixed crystal, a second guide layer made of AlGaAs mixed crystal, and a second-conductivity type second cladding layer, and a second semiconductor laser device including a first-conductivity type third cladding layer, a third guide layer made of AlGaInP mixed crystal, a second quantum well active layer having a barrier layer made of AlGaInP mixed crystal, a fourth guide layer made of AlGaInP mixed crystal, and a second-conductivity type fourth cladding layer. At least the barrier layer included in the first quantum well active layer, the first guide layer, and the second guide layer each have an Al molar ratio of more than 0.47 and 0.60 or less.

摘要翻译： 双波长半导体激光器件包括：第一半导体激光器件，包括第一导电型第一包层，由AlGaAs混晶构成的第一引导层;具有由AlGaAs混晶构成的阻挡层的第一量子阱有源层; 由AlGaAs混晶构成的第二引导层和第二导电型第二覆层，以及包括第一导电型第三覆层，由AlGaInP混晶构成的第三引导层的第二半导体激光器件，第二量子阱活性 具有由AlGaInP混晶构成的阻挡层的层，由AlGaInP混晶构成的第四引导层和第二导电型第四覆层。 至少包含在第一量子阱活性层，第一引导层和第二引导层中的阻挡层各自具有大于0.47和0.60或更小的Al摩尔比。

公开(公告)号：US20070237199A1

公开(公告)日：2007-10-11

申请号：US11390426

申请日：2006-03-28

申请人： Takayuki Kashima ,  Kouji Makita ,  Kenji Yoshikawa

发明人： Takayuki Kashima ,  Kouji Makita ,  Kenji Yoshikawa

IPC分类号： H01S5/00

CPC分类号： H01S5/162 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/4031 ,  H01S5/4087

摘要： In a monolithic dual-laser semiconductor laser device capable of high power output, a window structure for each of laser elements is formed through a common step, thereby improving the device reliability. The semiconductor laser device has an infrared laser element 110 and a red laser element 120 monolithically integrated on an n-type semiconductor substrate 101. Each of the infrared and red laser elements 110 and 120 has a ridged waveguide and a window structure formed by Zn diffusion at each resonator facet. The infrared and red laser elements 110 and 120 include p-type contact layers 109 and 119 on the ridges of the respective waveguides. The p-type contact layer 109 is thinner than the p-type contact layer 119.

摘要翻译： 在能够实现高功率输出的单片双激光半导体激光器件中，通过共同的步骤形成每个激光元件的窗口结构，从而提高器件的可靠性。 半导体激光装置具有红外激光元件110和单片集成在n型半导体基板101上的红色激光元件120。 红外线和红色激光元件110和120中的每一个具有脊状波导和在每个谐振器面处由Zn扩散形成的窗口结构。 红外线和红色激光元件110和120在相应波导的脊上包括p型接触层109和119。 p型接触层109比p型接触层119薄。

公开(公告)号：US20090147814A1

公开(公告)日：2009-06-11

申请号：US11571112

申请日：2006-01-12

申请人： Hiroyuki HOSOI ,  Kouji MAKITA ,  Michinari YAMANAKA

发明人： Hiroyuki HOSOI ,  Kouji MAKITA ,  Michinari YAMANAKA

IPC分类号： H01S5/22 ,  H01L21/70

CPC分类号： H01S5/223

摘要： A ridge stripe type semiconductor laser device is provided, on a semiconductor substrate (102), with a first conduction type cladding layer (103), an active layer (104), a second conduction type first cladding layer (105), a second conduction type second cladding layer (108) of a ridge type stripe shape for confining direction, and a current block layer (107) formed by removing at least an upper portion of the ridge. In a section normal to the stripe direction of the ridge, each of the two side faces of the ridge is provided with a first face (118) substantially normal to the semiconductor substrate surface and extending downward from the upper end of the ridge, and a second face (119) formed to have a substantially straight skirt slope face inclined at the ridge skirt portion obliquely downward to the ridge outside. The first face and the second face are made to merge either directly or through a third intermediate face into each other. A face (111) of a semiconductor constituting the second cladding layer is exposed to the second face. The semiconductor laser device thus provided can have a high kink level and a high output with a low operating current.

摘要翻译： 在半导体基板（102）上设置有脊状半导体激光装置，具有第一导电型包覆层（103），有源层（104），第二导电型第一包层（105），第二导电 形成用于限制方向的脊状条形形状的第二包覆层（108），以及通过去除至少脊部的上部而形成的电流阻挡层（107）。 在与脊的条纹方向垂直的截面中，脊的两个侧面中的每一个设置有基本上垂直于半导体衬底表面并从脊的上端向下延伸的第一面（118），并且 第二面（119）形成为具有在脊部裙部部分处倾斜向下倾斜到脊部的大致直的裙边坡面。 使第一面和第二面直接或通过第三中间面相互合并。 构成第二包层的半导体的面（111）暴露于第二面。 如此提供的半导体激光器件可以具有高的扭结电平和具有低工作电流的高输出。

公开(公告)号：US20090086782A1

公开(公告)日：2009-04-02

申请号：US12235320

申请日：2008-09-22

申请人： Takeshi YOKOYAMA ,  Takayuki KASHIMA ,  Kouji MAKITA

发明人： Takeshi YOKOYAMA ,  Takayuki KASHIMA ,  Kouji MAKITA

IPC分类号： H01S5/026 ,  H01S5/20 ,  H01L21/02

CPC分类号： H01S5/162 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/0281 ,  H01S5/32316 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/4031 ,  H01S5/4087

摘要： On a first region that is a part of one main face of a semiconductor substrate 1, a first semiconductor laser structure 10 is formed so as to have a first lower cladding layer 3, a first active layer 4 with a first quantum well structure and first upper cladding layers 5, 7, which are layered in this order from the semiconductor substrate side, thereby forming a first resonator. On a second region that is different from the first region, a second semiconductor laser structure 20 is formed so as to have a second lower cladding layer 13, a second active layer 14 with a second quantum well structure and a second upper cladding layer 15, 17, which are layered in this order, thereby forming a second resonator. End face coating films 31, 32 are formed on facets of the first and the second resonators, and a nitrogen-containing layer 30 is formed between the facets of the first and the second resonators and the facet coating film. In the semiconductor laser device provided with a high-output dual-wavelength lasers that are formed monolithically, the decrease of the COD level during the high-output operation of the laser can be suppressed.

摘要翻译： 在作为半导体基板1的一个主面的一部分的第一区域上，形成第一半导体激光结构体10，具有第一下部包层3，具有第一量子阱结构的第一有源层4和第一 上覆层5,7，其从半导体衬底侧依次层叠，从而形成第一谐振器。 在与第一区域不同的第二区域上形成第二半导体激光器结构20，以具有第二下部包层13，具有第二量子阱结构的第二有源层14和第二上部包层15， 17，其按顺序分层，从而形成第二谐振器。 端面涂膜31,32形成在第一和第二谐振器的小面上，并且在第一和第二谐振器的小面和小面涂膜之间形成含氮层30。 在具有单片形成的高输出双波长激光器的半导体激光装置中，能够抑制激光器的高输出运转时的COD电平的降低。