Bit processing method for adaptive multirate modulation
    22.
    发明授权
    Bit processing method for adaptive multirate modulation 有权
    自适应多速率调制的位处理方法

    公开(公告)号:US07333550B2

    公开(公告)日:2008-02-19

    申请号:US10696070

    申请日:2003-10-28

    Applicant: Sung-Kwon Hong

    Inventor: Sung-Kwon Hong

    CPC classification number: H04L1/0003 H04L27/3411 Y02D50/10

    Abstract: A discontinuous transmission (DTX) bit processing method for a multirate modulation scheme is provided. The method comprises receiving a symbol; determining whether the symbol comprises at least one DTX bit; mapping the symbol to a predetermined mapping point (S) on an IQ plane; minimizing a transmission power level if the symbol has at least one DTX bit; and transmitting the symbol in the transmission power level of the mapping point.

    Abstract translation: 提供了一种用于多速率调制方案的不连续传输(DTX)位处理方法。 该方法包括:接收符号; 确定所述符号是否包括至少一个DTX位; 将符号映射到IQ平面上的预定映射点(S); 如果符号具有至少一个DTX位,则最小化传输功率电平; 以及在所述映射点的发送功率电平中发送所述符号。

    Apparatus and method for transmitting data using adaptive modulation and coding in mobile communication system having a relay station
    23.
    发明申请
    Apparatus and method for transmitting data using adaptive modulation and coding in mobile communication system having a relay station 审中-公开
    在具有中继站的移动通信系统中使用自适应调制和编码来发送数据的设备和方法

    公开(公告)号:US20070155338A1

    公开(公告)日:2007-07-05

    申请号:US11649185

    申请日:2007-01-03

    Abstract: Provided are an apparatus and method for transmitting data using an Adaptive Modulation and Coding (AMC) scheme in a mobile communication system with a Relay Station (RS). A relay indicator value is received indicating a strength of a downlink signal transmitted to a destination through a relay path including the RS and a direct indicator value indicating a strength of an downlink signal directly transmitted to the destination via a direct path without passing through the RS. Modulation and Coding Scheme (MCS) levels are determined using the relay and direct indicator values for both the relay and direct paths. Bandwidth efficiencies are found in correspondence with the MCS levels and are compared depending on whether the relay path or the direct path is used. A path resulting in a higher bandwidth efficiency is selected to generate a data frame having a structure corresponding to the selected path. The data frame is transmitted to the destination or the RS.

    Abstract translation: 提供了一种在具有中继站(RS)的移动通信系统中使用自适应调制和编码(AMC)方案发送数据的装置和方法。 接收到指示通过包括RS的中继路径发送到目的地的下行链路信号的强度的指示符值,以及指示经由直接路径直接发送到目的地的下行链路信号的强度的直接指示符值,而不经过RS 。 调制和编码方案(MCS)级别是使用中继和直接指示符值来确定的。 根据MCS级别发现带宽效率,并根据中继路径还是直接路径进行比较。 选择导致更高带宽效率的路径以生成具有与所选路径相对应的结构的数据帧。 数据帧发送到目的地或RS。

    Semiconductor memory device with dielectric structure and method for fabricating the same
    24.
    发明申请
    Semiconductor memory device with dielectric structure and method for fabricating the same 审中-公开
    具有介质结构的半导体存储器件及其制造方法

    公开(公告)号:US20070051998A1

    公开(公告)日:2007-03-08

    申请号:US11387563

    申请日:2006-03-22

    CPC classification number: H01L29/7881 H01L29/40114 H01L29/513

    Abstract: A semiconductor memory device with a dielectric structure and a method for fabricating the same are provided. The dielectric structure includes: a first dielectric layer having a dielectric constant of approximately 25 or higher; a second dielectric layer including a material having a crystallization rate lower than the first dielectric layer and formed over the first dielectric layer; and a third dielectric layer including a material substantially identical to that of the first dielectric layer and formed over the second dielectric layer.

    Abstract translation: 提供具有介电结构的半导体存储器件及其制造方法。 电介质结构包括:介电常数约为25或更高的第一介电层; 第二电介质层,其包括具有比所述第一电介质层低的结晶化率的材料,并形成在所述第一介电层上; 以及第三电介质层,其包括与所述第一电介质层的材料基本相同的材料,并形成在所述第二电介质层上。

    Dielectric structure in nonvolatile memory device and method for fabricating the same
    25.
    发明申请
    Dielectric structure in nonvolatile memory device and method for fabricating the same 失效
    非易失性存储器件中的介质结构及其制造方法

    公开(公告)号:US20070004154A1

    公开(公告)日:2007-01-04

    申请号:US11264028

    申请日:2005-11-02

    CPC classification number: H01L21/28273 H01L29/513 H01L29/7881

    Abstract: A dielectric structure in a nonvolatile memory device and a method for fabricating the same are provided. The dielectric structure includes: a first oxide layer; a first high-k dielectric film formed on the first oxide layer, wherein the first high-k dielectric film includes one selected from materials with a dielectric constant of approximately 9 or higher and a compound of at least two of the materials; and a second oxide layer formed on the first high-k dielectric film.

    Abstract translation: 提供了一种非易失性存储器件中的电介质结构及其制造方法。 介电结构包括:第一氧化物层; 形成在所述第一氧化物层上的第一高k电介质膜,其中所述第一高k电介质膜包括介电常数约为9或更高的材料和至少两种所述材料的化合物中的一种; 以及形成在第一高k电介质膜上的第二氧化物层。

    Capacitor
    27.
    发明授权
    Capacitor 失效
    电容器

    公开(公告)号:US07042034B2

    公开(公告)日:2006-05-09

    申请号:US10759457

    申请日:2004-01-16

    Applicant: Kwon Hong

    Inventor: Kwon Hong

    CPC classification number: H01L28/90 H01L28/55 H01L28/60

    Abstract: The disclosure provides a capacitor including a lower electrode, a surface of which can be formed of Pt, and an inner part of which can be formed of metal having good antioxidant properties. The inner part of the lower electrode can be formed by depositing Ru or Ir with an electro plating process. It is possible to improve the leakage current characteristics by forming the surface of the lower electrode with Pt. Also it is possible to perform a thermal treatment at a high temperature in an oxygen atmosphere, because the inner part of the lower electrode resists or prevents diffusion of oxygen, so that a high dielectric layer can be obtained.

    Abstract translation: 本发明提供一种电容器,其包括下电极,其表面可以由Pt形成,并且其内部可由具有良好抗氧化性质的金属形成。 下部电极的内部可以通过电镀工艺沉积Ru或Ir来形成。 通过用Pt形成下电极的表面,可以提高漏电流特性。 也可以在氧气氛中在高温下进行热处理,因为下部电极的内部阻止或阻止氧的扩散,从而可以获得高介电层。

    Apparatus and method for changing signal mapping rule in a hybrid automatic repeat request system
    30.
    发明申请
    Apparatus and method for changing signal mapping rule in a hybrid automatic repeat request system 审中-公开
    用于在混合自动重复请求系统中改变信号映射规则的装置和方法

    公开(公告)号:US20060036922A1

    公开(公告)日:2006-02-16

    申请号:US11204941

    申请日:2005-08-16

    CPC classification number: H04L1/1893 H04L1/0668 H04L1/1607 H04L1/1812

    Abstract: An apparatus and method for changing a signal mapping rule in an hybrid automatic repeat request (HARQ) system are provided. In a transmitter in an automatic repeat request (ARQ) system according to the present invention, a memory stores different signal constellations for a predetermined modulation scheme according to retransmission numbers (k). A modulator reads a signal constellation according to a current retransmission number from the memory, upon receipt of a retransmission request signal from a receiver, and modulates transmission data to complex symbols on the signal constellation.

    Abstract translation: 提供了一种用于在混合自动重传请求(HARQ)系统中改变信号映射规则的装置和方法。 在根据本发明的自动重复请求(ARQ)系统的发射机中,存储器根据重传号(k)存储针对预定调制方案的不同信号星座。 调制器从接收机接收到重传请求信号时,根据来自存储器的当前重传次数读取信号星座图,并将发送数据调制到信号星座上的复数符号。

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