公开(公告)号：US12199686B2

公开(公告)日：2025-01-14

申请号：US17657540

申请日：2022-03-31

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Onur Kazanc ,  Alexander Heubi ,  Noureddine Senouci

IPC: H03F1/26 ,  H03F3/193 ,  H03F3/21 ,  H03F3/45 ,  H04B17/318

Abstract: A receive signal strength indicator circuit includes a low-noise amplifier, an envelope detector, and a selection circuit. The low-noise amplifier has a plurality of serially-coupled amplifier stages each providing an amplified signal, wherein a first amplifier stage receives an input signal whose signal strength is to be measured, and a last amplifier stage provides an amplified output signal. The envelope detector stage includes a plurality of envelope detector circuits, each having an input receiving the amplified signal of a corresponding one of the plurality of serially-coupled amplifier stages, and an output for providing a receive signal strength indicator component. The selection circuit is coupled to the outputs of the plurality of envelope detector circuits, and provides the receive signal strength indicator component of one of the plurality of envelope detector circuits having a desired linear range as a detected RSSI signal.

公开(公告)号：US12196581B2

公开(公告)日：2025-01-14

申请号：US17657783

申请日：2022-04-04

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Jacques Jean Bertin

IPC: G01D5/20

Abstract: In at least one aspect, an inductive position sensor comprising a target. The inductive position sensor can include a stator including an excitation coil being inductively coupled to the target, and a receiver coil including a first loop connected in series with a second loop, and inductively coupled with the target such that a receiver coil voltage is generated at the receiver coil. The second loop can be offset, on the stator and relative to the first loop, by a portion of a harmonic period corresponding with a harmonic for nullification in the receiver coil voltage. The inductive position sensor can include a control unit configured to receive a plurality of receiver coil voltages including the receiver coil voltage, the control unit configured to generate an angular position signal based on the plurality of receiver coil voltages.

公开(公告)号：US20250015044A1

公开(公告)日：2025-01-09

申请号：US18346976

申请日：2023-07-05

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Hao YAN ,  Kun FENG ,  Sixin JI ,  ZhengDong GE

IPC: H01L23/00 ,  H01L23/373

Abstract: A die-attach process that creates a bond strength sufficient to hold a die to a substrate while it is handled before being permanently attached is disclosed. The die-attach process includes forming locking features in a metal layer of a substrate so a bond at the die-substrate interface is strengthened. The locking features may include a plurality of cavities or slots formed in a metal layer of the substrate. The cavities and slots can increase a surface area and provide anchor points for a die-attach film placed between the die and the substrate.

公开(公告)号：US20250006603A1

公开(公告)日：2025-01-02

申请号：US18344292

申请日：2023-06-29

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Yong LIU ,  Qing YANG

IPC: H01L23/495 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31

Abstract: Devices and methods are disclosed for high power inverter modules with enhanced thermal and mechanical performance, for use in electric vehicles. The disclosed devices feature enlarged clips that cover an entire die, to distribute mechanical forces, thus preventing die cracks for improved reliability. In these power modules, semiconductor dies are sandwiched between a three-layer direct bond metal (DBM) structure and the enlarged clip. A pre-molded clip assembly can be used that includes integrated metalliization to eliminate the need for external wire bonds. Alternatively, semiconductor dies can be inverted in a flip-chip configuration to face a modified DBM structure that integrates the metallization. Simulations of the disclosed power inverters indicate improved efficiency in dissipating heat.

公开(公告)号：US20250006589A1

公开(公告)日：2025-01-02

申请号：US18747029

申请日：2024-06-18

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： John MOOKKEN

IPC: H01L23/473 ,  H01L23/373 ,  H01L23/495

Abstract: A fluid-cooled power module is disclosed for cooling high power semiconductor devices. Semiconductor dies supported by a direct-bonded metal structure are attached to a cooling unit that circulates coolant from an inner chamber, through spray jets, to an outer chamber, so that coolant impinges onto a metal surface in thermal contact with the direct-bonded metal structure. Use of the cooling fluid provides more efficient and cost effective cooling than relying on a solid metal heat sink. The disclosed fluid-cooled power modules can reduce the cost and weight of heat dissipation for compatibility with aerospace applications.

公开(公告)号：US20250004523A1

公开(公告)日：2025-01-02

申请号：US18344470

申请日：2023-06-29

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Dieter Jozef JOOS ,  Philippe DEBOSQUE ,  Philippe QUARMEAU

IPC: G06F1/28 ,  G06F1/3206 ,  G06F1/3237

Abstract: In some aspects, a power supply system includes a plurality of power supply devices configured to be connected to an integrated circuit, where a power supply device of the plurality of power supply devices includes a voltage regulator configured to generate a rail voltage, and an internal diagnostic circuit. The internal diagnostic circuit is configured to detect activation of an enable signal to activate the plurality of power supply devices according to an activation power sequence, detect a rail violation of the activation power sequence in response to a value of the rail voltage at a first time, not satisfying a first condition defined by a voltage threshold, or at a second time, not satisfying a second condition defined by the voltage threshold. In response to the rail violation being detected, the internal diagnostic circuit is configured to activate an interrupt signal.

公开(公告)号：US20240413757A1

公开(公告)日：2024-12-12

申请号：US18814324

申请日：2024-08-23

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Anders LIND

IPC: H02M3/158 ,  H02M1/00 ,  H02M1/08 ,  H02M1/32 ,  H02M1/42 ,  H02M7/219

Abstract: A method of detecting zero crossings in an AC input voltage at an input of a power converter, including measuring, at a first time, a first voltage. If the first voltage is positive, the method may include determining that the first time corresponds to a positive half-cycle of the AC input voltage. If the first voltage is equal to approximately zero: a) determining that the first time corresponds to a negative half-cycle of the AC input voltage; b) turning on a high-side switch of the power converter for a first time period; and c) measuring, during the first time period, a second voltage. If the second voltage is less than a first threshold, turning off the high-side switch and repeating b) and c) after a time delay. If the second voltage is less than a second threshold, maintaining the high-side switch in an ON state for a second time period.

公开(公告)号：US12166090B2

公开(公告)日：2024-12-10

申请号：US17660691

申请日：2022-04-26

Applicant: Semiconductor Components Industries, LLC

Inventor： Zia Hossain ,  Joseph Andrew Yedinak ,  Sauvik Chowdhury ,  Muh-Ling Ger

IPC: H01L29/40 ,  H01L29/06 ,  H01L29/36 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

Abstract: An electronic device can include a substrate, an active region of a transistor, and a shield electrode. The substrate can define a trench and include a mesa adjacent to the trench, and the shield electrode can be within the trench. In an embodiment, the electronic device can further include an active region of a transistor within the mesa and an insulating layer including a thicker section and a thinner section closer to a bottom of the trench. In another embodiment, the electronic device can include a body region and a doped region within the mesa and spaced apart from the body region by a semiconductor region. The doped region can have a dopant concentration that is higher than a dopant concentration of the semiconductor region and a portion of the substrate underlying the doped region.

公开(公告)号：US20240404926A1

公开(公告)日：2024-12-05

申请号：US18326459

申请日：2023-05-31

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Heejo CHI ,  Seungwon IM ,  Oseob JEON

IPC: H01L23/495 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31

Abstract: A module includes an assembly of a semiconductor device die coupled to a lead frame. A board is disposed below the lead frame. The board includes a plated-through hole (PTH) aligned with an opening in the lead frame above the board. The module further includes a mold body encapsulating at least a portion of the assembly. The mold body includes a through-mold via (TMV) aligned with the opening in the lead frame and with the PTH. The PTH is physically accessible from outside the mold body through the TMV and the opening in the lead frame.

公开(公告)号：US20240395925A1

公开(公告)日：2024-11-28

申请号：US18796083

申请日：2024-08-06

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Gordon M. GRIVNA

IPC: H01L29/78 ,  H01L21/3065 ,  H01L21/78 ,  H01L23/48 ,  H01L29/06

Abstract: A semiconductor device includes a region of semiconductor material having a first side and a second side opposite to the first side. Active device structures are adjacent to the first side, the active device structures comprising source regions and gate electrodes. A first gate conductor is at the first side electrically connected to the gate electrodes, a drain region is at the second side, a second gate conductor is at the second side, and through-semiconductor vias extending from the first side towards the side and electrically connecting the first gate electrode to the second gate electrode. A source electrode is at the first side electrically connected to the source regions, and a drain electrode is at the second side electrically connected to the drain region. The through-semiconductor vias are electrically isolated from the source regions and the drain region. The structure provides a gate/drain up with a source-down configuration.