摘要:
An electronic controller defining an autonomous mobile device includes a self-location estimation unit to estimate a self-location based on a local map that is created according to distance/angle information relative to an object in the vicinity and the travel distance of an omni wheel, an environmental map creation unit to create an environmental map of a mobile area based on the self-location and the local map during the guided travel with using a joystick, a registration switch to register the self-location of the autonomous mobile device as the position coordinate of the setting point when the autonomous mobile device reaches a predetermined setting point during the guided travel, a storage unit to store the environmental map and the setting point, a route planning unit to plan the travel route by using the setting point on the environmental map stored in the storage unit, and a travel control unit to control the autonomous mobile device to autonomously travel along the travel route.
摘要:
Enabled is to estimate a self-position even when no landmark is seen or when an article confusing the landmark is brought in. An omnidirectional camera recognizes a vertical land-mark near a wall to determine a candidate for the self-position. On the basis of the candidate determined, a break in a map between a floor and a wall is projected on the camera image thereby to perform the matching.
摘要:
A method of producing a semiconductor wafer suited to form types of devices such as HBT and FET on a single semiconductor wafer is provided. The method, by repeating steps including introducing, into a reaction chamber for forming a semiconductor by crystal growth, a first-impurity gas containing an element or a compound containing a first impurity atom as a constituent, thereby producing semiconductor wafers, includes, after introducing the first-impurity gas: taking out a produced semiconductor wafer; disposing a first semiconductor in the reaction chamber; introducing, into the reaction chamber, a second-impurity gas containing an element or a compound containing, as a constituent, a second impurity atom exhibiting a conduction type opposite to the conduction type of the first impurity atom within the first semiconductor; heating the first semiconductor in an atmosphere of the second-impurity gas; and forming a second semiconductor on the heated first semiconductor by crystal growth.
摘要:
An electronic controller defining an autonomous mobile device a self-location estimation unit to estimate a self-location based on a local map that is created according to distance/angle information relative to an object in the vicinity and the travel distance of an omni wheel, an environmental map creation unit to create an environmental map of a mobile area based on the self-location and the local map during the guided travel with using a joystick, a registration switch to register the self-location of the autonomous mobile device as the position coordinate of the setting point when the autonomous mobile device reaches a predetermined setting point during the guided travel, a storage unit to store the environmental map and the setting point, a route planning unit to plan the travel route by using the setting point on the environmental map stored in the storage unit, and a travel control unit to control the autonomous mobile device to autonomously travel along the travel route.
摘要:
A rotary type electric shaver with an outer cutter frame provided on a shaver main body. An outer cutter installed in this outer cutter frame and having its shaving surface on the upper surface of a ring-shaped thin layer portion. An inner cutter 16 having a cutter body that rotates and makes sliding contact from below with the lower surface of the outer cutter 14, wherein a thin layer portion 28 is formed in a substantially arc shape that is convex upward in a radial and vertical cross section that includes a center axis line which is the rotational center of the inner cutter. The thickness of the thin layer portion near the apex of the upward convex is smallest at the apex and gradually becomes thicker as distance increases away from the apex.
摘要:
A robot capable of traveling while constantly directing a predetermined part of a main body to a detection target. In the robot, a main body is jointed to a traveling unit so that relative rotation is possible between the main body and the traveling unit. Based on position information of a detection target detected by a position detection sensor, a control device controls, while the traveling unit is traveling, a body drive motor so that a front surface of the main body constantly faces the detection target and rotates the main body relative to the traveling unit. Accordingly, a CCD camera, a microphone, a speaker, display or the like provided on the front surface of the main body constantly face the detection target. Thus, the robot can reliably communicate with the detection target even during traveling, through mutual transmission of information between the robot and the detection target.
摘要:
A rotary shaver including an outer cutter frame (18) provided on a shaver main body (10), an outer cutter (14) that is installed in this outer cutter frame (18) and has ring-shaped thin layer portions (28a, 28b) whose upper surfaces are the shaving surfaces, and an inner cutter (16) that has cutter bodies (38) that rotates and make sliding contact with the lower surface of the thin layer portions of the outer cutter to cut hair that entered hair introduction openings (30a, 30b) formed in the thin layer portions; wherein the hair introduction openings have a slit shape extending in substantially the radial direction of the thin layer portions, and the cutting edge angle (p, q) at the lower end(s) of the side wall surface(s) of the hair introduction openings (30a, 30b) defined by the ribs (32a, 32b) is an acute angle.
摘要:
A compound semiconductor epitaxial substrate having a pseudomorphic high electron mobility field effect transistor structure which comprises an InGaAs layer as a channel layer 9 and an InGaP layer containing n-type impurities as a front side electron supplying layer 12, wherein an electron mobility in the InGaAs layer at room temperature (300 K) has become 8000 cm2/V·s or more by growing an epitaxial substrate having a pseudomorphic HEMT structure with an In composition of the channel layer 9 increased. Front side spacer layers 10 and 11 between the channel layer 9 and the front side electron supplying layer 12 may also be InGaP layers.