公开(公告)号：US20120068224A1

公开(公告)日：2012-03-22

申请号：US13267370

申请日：2011-10-06

申请人： Naohiro NISHIKAWA ,  Tsuyoshi NAKANO ,  Takayuki INOUE

发明人： Naohiro NISHIKAWA ,  Tsuyoshi NAKANO ,  Takayuki INOUE

IPC分类号： H01L29/36 ,  H01L21/02 ,  H01L21/20

CPC分类号： H01L21/02395 ,  H01L21/0237 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/20 ,  H01L29/7371 ,  H01L29/7786 ,  H01L29/8605

摘要： A method of producing a semiconductor wafer suited to form types of devices such as HBT and FET on a single semiconductor wafer is provided. The method, by repeating steps including introducing, into a reaction chamber for forming a semiconductor by crystal growth, a first-impurity gas containing an element or a compound containing a first impurity atom as a constituent, thereby producing semiconductor wafers, includes, after introducing the first-impurity gas: taking out a produced semiconductor wafer; disposing a first semiconductor in the reaction chamber; introducing, into the reaction chamber, a second-impurity gas containing an element or a compound containing, as a constituent, a second impurity atom exhibiting a conduction type opposite to the conduction type of the first impurity atom within the first semiconductor; heating the first semiconductor in an atmosphere of the second-impurity gas; and forming a second semiconductor on the heated first semiconductor by crystal growth.

摘要翻译： 提供了在单个半导体晶片上制造适合于形成诸如HBT和FET之类的器件的半导体晶片的方法。 该方法通过重复步骤，包括通过晶体生长将用于形成半导体的反应室引入包含元素或含有第一杂质原子的化合物作为组分的第一杂质气体，从而制备半导体晶片，其中引入 第一杂质气体：取出生产的半导体晶片; 在反应室中设置第一半导体; 向所述反应室中引入包含元素或化合物的第二杂质气体，所述元素或化合物含有与所述第一半导体内的所述第一杂质原子的导电类型相反的导电类型的第二杂质原子作为组分; 在第二杂质气体的气氛中加热第一半导体; 以及通过晶体生长在加热的第一半导体上形成第二半导体。

公开(公告)号：US20120132719A1

公开(公告)日：2012-05-31

申请号：US13368380

申请日：2012-02-08

申请人： Yoshiyuki KUROKAWA ,  Takayuki IKEDA ,  Masami ENDO ,  Hiroki DEMBO ,  Daisuke KAWAE ,  Takayuki INOUE ,  Munehiro KOZUMA

发明人： Yoshiyuki KUROKAWA ,  Takayuki IKEDA ,  Masami ENDO ,  Hiroki DEMBO ,  Daisuke KAWAE ,  Takayuki INOUE ,  Munehiro KOZUMA

IPC分类号： G06K19/073

CPC分类号： G06K19/07749 ,  G06K7/0008 ,  G06K19/0716 ,  G06K2017/0045

摘要： A semiconductor device is provided with a power supply circuit having a function to generate a power supply voltage from a wireless signal and an A/D converter circuit having a function to detect the strength of the wireless signal by an A/D conversion of a voltage generated from the wireless signal. This enables to provide a semiconductor device which does not require replacement of batteries, has few limitations on its physical shape and mass, and has a function to detect a physical position. By formation of the semiconductor device with use of a thin film transistor formed over a plastic substrate, a lightweight semiconductor device, which has flexibility in physical shape and a function to detect a physical location, can be provided at low cost.

摘要翻译： 半导体器件具有电源电路，该电源电路具有从无线信号产生电源电压的功能，以及具有通过A / D转换电压来检测无线信号的强度的功能的A / D转换电路 由无线信号产生。 这能够提供不需要更换电池的半导体器件，其物理形状和质量几乎没有限制，并且具有检测物理位置的功能。 通过使用形成在塑料基板上的薄膜晶体管形成半导体器件，可以以低成本提供具有物理形状的灵活性和检测物理位置的功能的轻量级的半导体器件。

公开(公告)号：US20110261864A1

公开(公告)日：2011-10-27

申请号：US13177583

申请日：2011-07-07

申请人： Yoshiyuki KUROKAWA ,  Takayuki IKEDA ,  Masami ENDO ,  Hiroki DEMBO ,  Daisuke KAWAE ,  Takayuki INOUE

发明人： Yoshiyuki KUROKAWA ,  Takayuki IKEDA ,  Masami ENDO ,  Hiroki DEMBO ,  Daisuke KAWAE ,  Takayuki INOUE

IPC分类号： H04B1/56

CPC分类号： G06K19/07749

摘要： In a case where an ASK method is used for a communication method between a semiconductor device and a reader/writer, the amplitude of a radio signal is changed by data transmitted from the semiconductor device to the reader/writer when data is not transmitted from the reader/writer to the semiconductor device. Therefore, in some cases, the semiconductor device mistakes data transmitted from the semiconductor device itself for data transmitted from the reader/writer to the semiconductor device. The semiconductor device includes an antenna circuit, a transmission circuit, a reception circuit, and an arithmetic processing circuit. The antenna circuit transmits and receives a radio signal. The transmission circuit outputs to the reception circuit a signal showing whether or not the antenna circuit is transmitting the radio signal.

摘要翻译： 在使用ASK方式进行半导体装置与读取器/写入器之间的通信方式的情况下，通过从半导体装置发送到读取器/写入器的数据，无线信号的振幅由数据不从 读取器/写入器到半导体器件。 因此，在某些情况下，半导体器件将从半导体器件本身发送的数据错误地从读取器/写入器发送到半导体器件的数据。 半导体器件包括天线电路，发送电路，接收电路和运算处理电路。 天线电路发送和接收无线电信号。 发送电路向接收电路输出表示天线电路是否正在发送无线信号的信号。

公开(公告)号：US20130215464A1

公开(公告)日：2013-08-22

申请号：US13761223

申请日：2013-02-07

申请人： Naohiko KUBO ,  Takayuki INOUE ,  Kohji YAMAMOTO ,  Yuka SAITO ,  Tomoyuki TAKAHIRA

发明人： Naohiko KUBO ,  Takayuki INOUE ,  Kohji YAMAMOTO ,  Yuka SAITO ,  Tomoyuki TAKAHIRA

IPC分类号： G06K15/00

CPC分类号： G06K15/40 ,  G06F3/1207 ,  G06F3/1219 ,  G06F3/1256 ,  G06F3/1286 ,  G06K15/1806 ,  G06K15/4005

摘要： In an image forming system, after receiving print data, print setting data, and a command to display a preview from an information processing apparatus, an image drawing unit in an image forming apparatus generates a preview image that reflects the print setting data from the print data and send it to the information processing apparatus. After receiving the print data, the print setting data, and the command to start printing from the information processing apparatus, the image drawing unit generates drawing data that reflects the print setting data from the print data, and an engine unit prints out an image on paper.

摘要翻译： 在图像形成系统中，在从信息处理设备接收到打印数据，打印设置数据和显示预览的命令之后，图像形成设备中的图像绘制单元生成从打印机反映打印设置数据的预览图像 数据并将其发送到信息处理设备。 在从信息处理装置接收到打印数据，打印设置数据和开始打印的命令之后，图像绘制单元从打印数据生成反映打印设置数据的绘制数据，并且引擎单元打印出图像 纸。

公开(公告)号：US20120183725A1

公开(公告)日：2012-07-19

申请号：US13432322

申请日：2012-03-28

申请人： Yasushi NOGUCHI ,  Atsushi KANEDA ,  Takayuki INOUE

发明人： Yasushi NOGUCHI ,  Atsushi KANEDA ,  Takayuki INOUE

IPC分类号： B32B3/12

CPC分类号： F01N3/28 ,  B01D46/2425 ,  B01D46/2451 ,  B01D46/247 ,  B01D46/2474 ,  B01D53/88 ,  B01D2046/2433 ,  B01D2046/2437 ,  B01D2258/01 ,  C04B35/565 ,  C04B35/6316 ,  C04B38/0009 ,  C04B41/009 ,  C04B41/5096 ,  C04B41/85 ,  C04B2111/0081 ,  C04B2235/3213 ,  C04B2235/428 ,  C04B2235/5436 ,  C04B2235/663 ,  C04B2235/96 ,  F01N3/0222 ,  Y02T10/20 ,  Y10T428/24149 ,  Y10T428/24165 ,  C04B38/0067 ,  C04B41/5059 ,  C04B38/0006 ,  C04B35/573

摘要： There is disclosed a honeycomb structure including a honeycomb structure section including: porous partition walls to divide and form a plurality of cells which extend from one end surface to the other end surface and become through channels of a fluid; and an outer peripheral wall positioned in an outermost periphery. The partition walls and the outer peripheral wall contain silicon carbide particles as an aggregate, and silicon as a binder to bind the silicon carbide particles, thicknesses of the partition walls are from 50 to 200 μm, a cell density is from 50 to 150 cells/cm2, an average particle diameter of silicon carbide as the aggregate is from 3 to 40 μm, and a volume resistivity at 400° C. is from 1 to 40 Ωcm.

摘要翻译： 公开了一种蜂窝结构体，其包括蜂窝结构部分，该蜂窝结构部分包括：多孔分隔壁，用于分隔并形成从一个端面延伸到另一端面的多个单元，并且通过流体通道; 以及位于最外周的外周壁。 分隔壁和外周壁包含碳化硅颗粒作为骨料，硅作为粘合剂以结合碳化硅颗粒，分隔壁的厚度为50-200μm，孔密度为50-150个/ cm 2，作为骨料的碳化硅的平均粒径为3〜40μm，400℃下的体积电阻率为1〜40Ω·cm。

公开(公告)号：US20120120742A1

公开(公告)日：2012-05-17

申请号：US13359534

申请日：2012-01-27

申请人： Takayuki INOUE ,  Yoshiyuki KUROKAWA

发明人： Takayuki INOUE ,  Yoshiyuki KUROKAWA

IPC分类号： G11C7/10 ,  G11C7/00

CPC分类号： G11C5/141 ,  G11C5/142 ,  G11C29/70

摘要： An object is to provide a semiconductor device having a memory which can efficiently improve a yield by employing a structure which facilitates the use of a spare memory cell. The semiconductor device includes a memory cell array having a memory cell and a spare memory cell, a decoder connected to the memory cell and the spare memory cell, a data holding circuit connected to the decoder, and a battery which supplies electric power to the data holding circuit. The spare memory cell operates in accordance with an output from the data holding circuit.

摘要翻译： 目的是提供一种具有存储器的半导体器件，其可以通过采用有利于使用备用存储单元的结构来有效地提高产量。 半导体器件包括具有存储单元和备用存储单元的存储单元阵列，连接到存储单元和备用存储单元的解码器，连接到解码器的数据保持电路以及向数据提供电力的电池 保持电路。 备用存储单元根据数据保持电路的输出进行工作。

公开(公告)号：US20120100309A1

公开(公告)日：2012-04-26

申请号：US13273258

申请日：2011-10-14

申请人： Hidekazu MIYAIRI ,  Yoichiro NUMASAWA ,  Takayuki INOUE ,  Kojiro TAKAHASHI ,  Mitsuhiro ICHIJO

发明人： Hidekazu MIYAIRI ,  Yoichiro NUMASAWA ,  Takayuki INOUE ,  Kojiro TAKAHASHI ,  Mitsuhiro ICHIJO

IPC分类号： C23C16/50 ,  C23C16/52 ,  C23C16/455

CPC分类号： H01J37/3244 ,  C23C16/45565 ,  C23C16/45574

摘要： A plasma treatment apparatus includes a treatment chamber covered with a chamber wall, where an upper electrode faces a lower electrode; and a line chamber separated from the treatment chamber by the upper electrode and an insulator, covered with the chamber wall, and connected to a first gas diffusion chamber between a dispersion plate and a shower plate. The first gas diffusion chamber is connected to a second gas diffusion chamber between the dispersion plate and the upper electrode. The second gas diffusion chamber is connected to a first gas pipe in the upper electrode. The upper electrode and the chamber wall are provided on the same axis. The dispersion plate includes a center portion with no gas hole and a peripheral portion with plural gas holes. The center portion faces a gas introduction port of the first gas pipe, connected to an electrode plane of the upper electrode.

摘要翻译： 等离子体处理装置包括被室壁覆盖的处理室，其中上电极面向下电极; 以及通过所述上部电极和所述处理室与所述室壁隔开并与所述分隔板和喷淋板之间的第一气体扩散室连接的管线室。 第一气体扩散室与分散板和上部电极之间的第二气体扩散室连接。 第二气体扩散室与上部电极中的第一气体管连接。 上电极和室壁设置在同一轴线上。 分散板包括没有气孔的中心部分和具有多个气孔的周边部分。 中心部分面向与上电极的电极平面连接的第一气体管的气体导入口。

公开(公告)号：US20100309306A1

公开(公告)日：2010-12-09

申请号：US12857110

申请日：2010-08-16

申请人： Shigeru UCHIYAMA ,  Takayuki INOUE ,  Masatoshi OKUGAWA ,  Jeremy COOKE

发明人： Shigeru UCHIYAMA ,  Takayuki INOUE ,  Masatoshi OKUGAWA ,  Jeremy COOKE

IPC分类号： H04N7/18

CPC分类号： G02B21/367

摘要： In acquisition of a micro image of a sample S by a micro image acquiring unit 30, when a plurality of image acquiring ranges are set for the sample S as an object of image acquisition, a plurality of corresponding focus information are set, and furthermore, when a plurality of partial images acquired by scanning the sample S by the micro image acquiring unit 30 include a partial image including mixing of a plurality of image acquiring ranges, the focus information is switched in the middle of scanning of the partial image. With such a structure, even when a plurality of objects are contained in the sample S, images of the respective objects can be preferably acquired. Thereby, an image acquiring apparatus, an image acquiring method, and an image acquiring program which are capable of preferably acquiring images of a plurality of objects are realized even when the plurality of objects are contained in a sample S.

摘要翻译： 在通过微图像获取单元30获取样本S的微图像时，当为作为图像获取对象的样本S设置多个图像采集范围时，设置多个相应的焦点信息，此外， 当通过微图像获取单元30扫描样本S获取的多个部分图像包括包括多个图像获取范围的混合的部分图像时，在部分图像的扫描中间切换焦点信息。 通过这样的结构，即使在样本S中包含多个物体，也可以优选获得各个物体的图像。 因此，即使当多个对象被包含在样本S中时，也能够实现能够优选地获取多个对象的图像的图像获取装置，图像获取方法和图像获取程序。

公开(公告)号：US20120061663A1

公开(公告)日：2012-03-15

申请号：US13226713

申请日：2011-09-07

申请人： Shunpei YAMAZAKI ,  Yusuke NONAKA ,  Takayuki INOUE ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Akiharu MIYANAGA

发明人： Shunpei YAMAZAKI ,  Yusuke NONAKA ,  Takayuki INOUE ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Akiharu MIYANAGA

IPC分类号： H01L29/12 ,  H01L21/34

CPC分类号： H01L29/7869 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/04 ,  H01L29/24 ,  H01L29/78603

摘要： An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.

摘要翻译： 本发明的目的是提供一种具有稳定的电气特性和高可靠性的氧化物半导体膜的半导体装置。 通过在绝缘表面上形成厚度为1nm至10nm的第一材料膜（具有六方晶体结构的膜）形成第一和第二材料膜的叠层，并形成具有六方晶系结构的第二材料膜（ 使用第一材料膜作为核的结晶氧化物半导体膜）。 作为第一材料膜，具有纤锌矿晶体结构的材料膜（例如氮化镓或氮化铝）或具有刚玉晶体结构的材料膜（α-Al 2 O 3，α-Ga 2 O 3，In 2 O 3，Ti 2 O 3，V 2 O 3，Cr 2 O 3，或 α-Fe 2 O 3）。

公开(公告)号：US20110306985A1

公开(公告)日：2011-12-15

申请号：US12986848

申请日：2011-01-07

申请人： Takayuki INOUE ,  Koichi KURAMOTO ,  Yoshio NAKASHIMA ,  Naohiko SUGITA ,  Mamoru MITSUISHI ,  Yoshikazu NAKASHIMA

发明人： Takayuki INOUE ,  Koichi KURAMOTO ,  Yoshio NAKASHIMA ,  Naohiko SUGITA ,  Mamoru MITSUISHI ,  Yoshikazu NAKASHIMA

IPC分类号： A61B19/00

CPC分类号： G06T19/003 ,  A61B34/20 ,  A61B34/30 ,  A61B2034/107 ,  G06T15/08 ,  G06T2210/41

摘要： A surgical assistance system for operating on biological tissue using a surgical tool attached to an arm of an automatically-controlled surgical instrument so that an optimal feed rate of the tool is calculated and outputted to the surgical instrument, the system including: a device for storing and voxelizing medical image data obtained from a biological tissue subject to surgery; a device for setting an operative location based on the shape of the biological tissue; a device for calculating a tool path along which the tool travels to perform surgery at an operative location; a device for determining the region of interference between the tool and the voxels; a device for determining the hardness of the biological tissue in the interference region; a device for calculating an optimal tool feed rate corresponding to the hardness; and a device for outputting the feed rate obtained by the calculations to the surgical instrument.

摘要翻译： 一种外科辅助系统，用于使用附接到自动控制的手术器械的臂上的外科手术工具进行生物组织的操作，从而计算出所述工具的最佳进给速率并将其输出到所述手术器械，所述系统包括： 并且从进行手术的生物组织获得的医学图像数据的体素化; 用于基于生物组织的形状设置操作位置的装置; 用于计算工具行进的工具路径以在操作位置执行手术的装置; 用于确定所述工具与所述体素之间的干涉区域的装置; 用于确定干涉区域中生物组织的硬度的装置; 用于计算对应于硬度的最佳刀具进给速率的装置; 以及用于将通过计算获得的进给速率输出到外科器械的装置。