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公开(公告)号：US09994951B2
公开(公告)日：2018-06-12
申请号：US14211354
申请日：2014-03-14
申请人： Robel Y. Bekele , Jason D. Myers , Jesse A. Frantz , Vinh Q. Nguyen , Jasbinder S. Sanghera , Sunlight Photonics Inc.
发明人： Robel Y. Bekele , Jason D. Myers , Jesse A. Frantz , Vinh Q. Nguyen , Jasbinder S. Sanghera , Allan J. Bruce , Michael Cyrus , Sergey V. Frolov
CPC分类号： C23C14/3414 , C23C14/0623
摘要： A method of: providing one or more spent sputtering targets comprising a photovoltaic compound and grinding the photovoltaic compound in an inert environment to form a powder.
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公开(公告)号：US09761343B2
公开(公告)日：2017-09-12
申请号：US14245025
申请日：2014-04-04
CPC分类号： H01B1/06 , C01B9/08 , C23C14/06 , C23C14/3414 , C23C14/5806 , Y10T428/31533 , Y10T428/31721 , Y10T428/31786
摘要： A p-type transparent conductive material can comprise a thin film of BCSF on a substrate where the film has a conductivity of at least 1 S/cm. The substrate may be a plastic substrate, such as a polyethersulfone, polyethylene terephthalate, polyimide, or some other suitable plastic or polymeric substrate.
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公开(公告)号：US09658105B2
公开(公告)日：2017-05-23
申请号：US14848555
申请日：2015-09-09
CPC分类号： G01J3/2823 , G01J3/0208 , G01J2003/2826 , G02B1/02 , G02B7/028 , G02B13/146
摘要： A compact multispectral imaging system comprising a set of optical elements capable of simultaneously focusing light from one or more spectral bands (SWIR, MWIR, and LWIR) to a common focal plane and a detector capable of capturing the multispectral image, wherein the optical elements comprise optics made from new optical materials or in combination with existing optical materials that transmit in multispectral wavelength regions.
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24.发明申请COPPER INDIUM GALLIUM SELENIDE (CIGS) THIN FILMS WITH COMPOSITION CONTROLLED BY CO-SPUTTERING 有权铜合金薄膜（CIGS）薄膜与组合物通过共溅射控制公开(公告)号：US20150075620A1
公开(公告)日：2015-03-19
申请号：US14549778
申请日：2014-11-21
申请人： Jesse A. Frantz , Jasbinder S. Sanghera , Robel Y. Bekele , Vinh Q. Nguyen , Ishwar D. Aggarwal , Allan J. Bruce , Michael Cyrus , Sergey V. Frolov
发明人： Jesse A. Frantz , Jasbinder S. Sanghera , Robel Y. Bekele , Vinh Q. Nguyen , Ishwar D. Aggarwal , Allan J. Bruce , Michael Cyrus , Sergey V. Frolov
IPC分类号： H01L31/18 , H01L31/0392
CPC分类号： H01J37/3429 , C23C14/0623 , C23C14/087 , C23C14/3414 , C23C14/3464 , H01J37/3414 , H01L21/02568 , H01L21/02631 , H01L31/0368 , H01L31/03923 , H01L31/18 , Y02E10/541
摘要： A method and apparatus for forming a thin film of a copper indium gallium selenide (CIGS)-type material are disclosed. The method includes providing first and second targets in a common sputtering chamber. The first target includes a source of CIGS material, such as an approximately stoichiometric polycrystalline CIGS material, and the second target includes a chalcogen, such as selenium, sulfur, tellurium, or a combination of these elements. The second target provides an excess of chalcogen in the chamber. This can compensate, at least in part, for the loss of chalcogen from the CIGS-source in the first target, resulting in a thin film with a controlled stoichiometry which provides effective light absorption when used in a solar cell.
摘要翻译： 公开了一种形成铜铟镓硒（CIGS）型材料的薄膜的方法和装置。 该方法包括在公共溅射室中提供第一和第二靶。 第一个目标包括CIGS材料源，例如近似化学计量的多晶CIGS材料，第二个靶材包括硫属元素，如硒，硫，碲或这些元素的组合。 第二个目标是在室内提供过量的硫属元素。 这可以至少部分地补偿来自第一靶中的CIGS源的硫属元素的损失，导致具有受控化学计量的薄膜，当用于太阳能电池时可提供有效的光吸收。
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25.发明授权Copper indium gallium selenide (CIGS) thin films with composition controlled by co-sputtering 有权铜铟镓硒（CIGS）薄膜，其组成通过共溅射控制公开(公告)号：US08894826B2
公开(公告)日：2014-11-25
申请号：US12884524
申请日：2010-09-17
申请人： Jesse A. Frantz , Jasbinder S. Sanghera , Robel Y. Bekele , Vinh Q Nguyen , Ishwar D. Aggarwal , Allan J. Bruce , Michael Cyrus , Sergey V. Frolov
发明人： Jesse A. Frantz , Jasbinder S. Sanghera , Robel Y. Bekele , Vinh Q Nguyen , Ishwar D. Aggarwal , Allan J. Bruce , Michael Cyrus , Sergey V. Frolov
IPC分类号： C23C14/00 , C23C14/32 , C25B9/00 , C25B11/00 , C25B13/00 , B05D5/06 , B05D5/12 , H01L21/00 , C23C14/06 , H01L31/18 , H01L31/0368 , H01L31/0392 , H01L21/02 , C23C14/34
CPC分类号： H01J37/3429 , C23C14/0623 , C23C14/087 , C23C14/3414 , C23C14/3464 , H01J37/3414 , H01L21/02568 , H01L21/02631 , H01L31/0368 , H01L31/03923 , H01L31/18 , Y02E10/541
摘要： A method and apparatus for forming a thin film of a copper indium gallium selenide (CIGS)-type material are disclosed. The method includes providing first and second targets in a common sputtering chamber. The first target includes a source of CIGS material, such as an approximately stoichiometric polycrystalline CIGS material, and the second target includes a chalcogen, such as selenium, sulfur, tellurium, or a combination of these elements. The second target provides an excess of chalcogen in the chamber. This can compensate, at least in part, for the loss of chalcogen from the CIGS-source in the first target, resulting in a thin film with a controlled stoichiometry which provides effective light absorption when used in a solar cell.
摘要翻译： 公开了一种形成铜铟镓硒（CIGS）型材料的薄膜的方法和装置。 该方法包括在公共溅射室中提供第一和第二靶。 第一个目标包括CIGS材料源，例如近似化学计量的多晶CIGS材料，第二个靶材包括硫属元素，如硒，硫，碲或这些元素的组合。 第二个目标是在室内提供过量的硫属元素。 这可以至少部分地补偿来自第一靶中的CIGS源的硫属元素的损失，导致具有受控化学计量的薄膜，当用于太阳能电池时可提供有效的光吸收。
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公开(公告)号：US07693388B1
公开(公告)日：2010-04-06
申请号：US12210467
申请日：2008-09-15
CPC分类号： C03B37/01265 , C03B2201/86 , C03C3/321 , C03C13/043
摘要： A thermally stable chalcogenide glass, a process for making the same, and an optical fiber drawn therefrom are provided. A chalcogenide glass having the composition Ge(5−y)As(32−x)Se(59+x)Te(4+y) (0≦y≦1 and 0≦x≦2) is substantially free from crystallization when it is heated past the glass transition temperature Tg or drawn into optical fibers. A process for making the thermally stable chalcogenide glass includes purifying the components to remove oxides and scattering centers, batching the components in a preprocessed distillation ampoule, gettering oxygen impurities from the mixture, and heating the components to form a glass melt. An optical fiber formed from the chalcogenide glass is substantially free from crystallization and exhibits low signal loss in the near-infrared region, particularly at wavelengths of about 1.55 μm.
摘要翻译： 提供了热稳定的硫族化物玻璃，其制造方法和从其中提取的光纤。 具有Ge（5-y）As（32-x）Se（59 + x）Te（4 + y）（0＆nlE; y＆nlE; 1和0＆nlE; x＆nlE; 2）组成的硫族化物玻璃基本上没有结晶 被加热超过玻璃化转变温度Tg或拉制成光纤。 制造热稳定的硫族化物玻璃的方法包括纯化组分以除去氧化物和散射中心，将组分在预处理的蒸馏安瓿中进行配料，从混合物中吸收氧杂质，并加热组分以形成玻璃熔体。 由硫族化物玻璃形成的光纤基本上没有结晶，并且在近红外区域特别是在约1.55μm的波长下表现出低信号损失。
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公开(公告)号：US20100067862A1
公开(公告)日：2010-03-18
申请号：US12210467
申请日：2008-09-15
IPC分类号： G02B6/00 , C01B19/00 , C03B25/00 , C03B37/075
CPC分类号： C03B37/01265 , C03B2201/86 , C03C3/321 , C03C13/043
摘要： A thermally stable chalcogenide glass, a process for making the same, and an optical fiber drawn therefrom are provided. A chalcogenide glass having the composition Ge(5−y)As(32−x)Se(59+x)Te(4+y) (0≦y≦1 and 0≦x≦2) is substantially free from crystallization when it is heated past the glass transition temperature Tg or drawn into optical fibers. A process for making the thermally stable chalcogenide glass includes purifying the components to remove oxides and scattering centers, batching the components in a preprocessed distillation ampoule, gettering oxygen impurities from the mixture, and heating the components to form a glass melt. An optical fiber formed from the chalcogenide glass is substantially free from crystallization and exhibits low signal loss in the near-infrared region, particularly at wavelengths of about 1.55 μm.
摘要翻译： 提供了热稳定的硫族化物玻璃，其制造方法和从其中提取的光纤。 具有Ge（5-y）As（32-x）Se（59 + x）Te（4 + y）（0＆nlE; y＆nlE; 1和0＆nlE; x＆nlE; 2）组成的硫族化物玻璃基本上没有结晶 被加热超过玻璃化转变温度Tg或拉制成光纤。 制造热稳定的硫族化物玻璃的方法包括纯化组分以除去氧化物和散射中心，将组分在预处理的蒸馏安瓿中进行配料，从混合物中吸收氧杂质，并加热组分以形成玻璃熔体。 由硫族化物玻璃形成的光纤基本上没有结晶，并且在近红外区域特别是在约1.55μm的波长下表现出低信号损失。
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公开(公告)号：US20100022378A1
公开(公告)日：2010-01-28
申请号：US12179797
申请日：2008-07-25
IPC分类号： C03C3/32 , C03B37/075
CPC分类号： C03B5/2252 , C03B5/06 , C03B2201/86 , C03B2211/00 , C03C3/32 , Y02P40/57
摘要： The present invention is generally directed to a method of making chalcogenide glasses including holding the melt in a vertical furnace to promote homogenization and mixing; slow cooling the melt at less than 10° C. per minute; and sequentially quenching the melt from the top down in a controlled manner. Additionally, the present invention provides for the materials produced by such method. The present invention is also directed to a process for removing oxygen and hydrogen impurities from chalcogenide glass components using dynamic distillation.
摘要翻译： 本发明一般涉及一种制备硫族化物玻璃的方法，包括将熔体保持在立式炉中以促进均质化和混合; 以低于每分钟10℃的速度缓慢冷却熔体; 并且以受控的方式从上到下依次淬火熔体。 此外，本发明提供了通过这种方法制造的材料。 本发明还涉及使用动态蒸馏从硫族化物玻璃组分中除去氧和氢杂质的方法。
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29.发明申请公开(公告)号：US20160377845A1
公开(公告)日：2016-12-29
申请号：US14210868
申请日：2014-03-14
申请人： Daniel J. Gibson , Mikhail Kotov , Geoff Chin , Shyam S. Bayya , Jasbinder S. Sanghera , Vinh Q. Nguyen
发明人： Daniel J. Gibson , Mikhail Kotov , Geoff Chin , Shyam S. Bayya , Jasbinder S. Sanghera , Vinh Q. Nguyen
CPC分类号： G02B13/146 , C03C3/321 , C03C3/323 , C03C4/10 , C03C23/007 , G02B3/0087
摘要： A method for making a gradient index infrared transmitting optic by thermally treating a preform, where the preform comprises two or more infrared transmitting glasses having different compositions and optical properties, where there is an interface between adjacent glasses, where during the thermal treatment one or more chemical elements from the glasses diffuses through one or more interface resulting in a diffused gradient index optical element comprising a gradient in the chemical element concentration, and where the optical element has a gradient in refractive index and dispersion. Also disclosed is the related infrared transmitting optical element made by this method.
摘要翻译： 一种用于通过热处理预成型件来制造梯度折射率红外传输光学器件的方法，其中所述预制件包括具有不同组成和光学性质的两个或更多个红外透射玻璃，其中在相邻玻璃之间存在界面，其中在热处理期间，一个或多个 来自玻璃的化学元素通过一个或多个界面扩散，导致包含化学元素浓度梯度的扩散梯度折射率光学元件，并且其中光学元件具有折射率和色散梯度。 还公开了通过该方法制造的相关的红外线透射光学元件。
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30.发明申请公开(公告)号：US20140216925A1
公开(公告)日：2014-08-07
申请号：US13756730
申请日：2013-02-01
IPC分类号： C23C14/34
CPC分类号： C23C14/3414 , C23C14/0623
摘要： A method of forming a CZT(S,Se) thin film from a quaternary target involves sputtering a quaternary target onto a substrate, wherein the quaternary target comprises (a) copper, (b) zinc, (c) tin, and (d) selenium and/or sulfur, wherein each component (a) through (d) is present in the quaternary target within ±50% of a 2:1:1:4 molar ratio, respectively, thereby forming a CZT(S,Se) thin film on the substrate, wherein the CZT(S,Se) thin film has a kesterite crystalline phase and a band gap of about 1.0 to 1.5 eV. In an embodiment, a ternary target is employed.
摘要翻译： 从四元靶形成CZT（S，Se）薄膜的方法包括将四价靶溅射到基板上，其中四价靶包括（a）铜，（b）锌，（c）锡和（d） 硒和/或硫，其中每个组分（a）至（d）分别以2:1:4:摩尔比的±50％存在于季目标中，从而形成CZT（S，Se）薄 膜，其中所述CZT（S，Se）薄膜具有钾硅酸盐晶相和约1.0至1.5eV的带隙。 在一个实施例中，采用三元目标。
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