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公开(公告)号:US20080288518A1
公开(公告)日:2008-11-20
申请号:US11748644
申请日:2007-05-15
Applicant: MICHIHITO MATSUO , ASAO HIRANO , YOKO INOUE
Inventor: MICHIHITO MATSUO , ASAO HIRANO , YOKO INOUE
IPC: G06F7/10
CPC classification number: H04N19/44 , H04N19/132 , H04N19/152 , H04N19/156 , H04N19/159 , H04N19/172 , H04N19/174 , H04N19/176 , H04N19/61
Abstract: The present invention provides a method for processing content data. The method comprises buffering a sequence of received compressed content data blocks (510), determining a level of available buffering for the received compressed content data blocks (550), determining a sub-set of compressed content data blocks to be decoded from the sequence of received compressed content data blocks (515), the sub-set of compressed content data blocks being dependent on the level of available buffering, and decoding the sub-set of compressed content data blocks to generate decompressed content data blocks (520).
Abstract translation: 本发明提供一种处理内容数据的方法。 该方法包括缓冲接收到的压缩内容数据块(510)的序列,确定所接收的压缩内容数据块(550)的可用缓冲的电平,确定要解码的压缩内容数据块的子集, 接收的压缩内容数据块(515),压缩内容数据块的子集取决于可用缓冲的水平,以及对压缩内容数据块的子集进行解码以生成解压缩的内容数据块(520)。
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公开(公告)号:US20080259605A1
公开(公告)日:2008-10-23
申请号:US12000287
申请日:2007-12-11
Applicant: Rena Murase , Yoko Inoue , Tomohiro Sasagawa
Inventor: Rena Murase , Yoko Inoue , Tomohiro Sasagawa
CPC classification number: G02B27/48 , G02B6/0008 , G02B27/0905
Abstract: An illumination light source includes a coherent light source in which a plurality of light emitting points that emit coherent light beams are arranged in a one-dimensional array; and a light magnifying unit that magnifies the coherent light beams that are emitted from the light emitting points so that a diameter of light emitted from the coherent light source in a direction perpendicular to a direction of arrangement of the light emitting points is larger than a diameter in the direction of arrangement of the light emitting points. The illumination light source also includes an optical fiber; and a light-converging optical system in which a magnification is set such that light emitted from the light magnifying unit is coupled to the optical fiber, based on a maximum diameter of the light emitted from the light magnifying unit.
Abstract translation: 照明光源包括相干光源,其中发射相干光束的多个发光点以一维阵列排列; 以及光放大单元,其放大从发光点发射的相干光束,使得从相干光源发射的光在与发光点的布置方向垂直的方向上的直径大于直径 在发光点的排列方向上。 照明光源还包括光纤; 以及聚光光学系统,其中基于从光放大单元发射的光的最大直径,设置放大率使得从光放大单元发射的光耦合到光纤。
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公开(公告)号:US07129063B2
公开(公告)日:2006-10-31
申请号:US10298417
申请日:2002-11-15
Applicant: Miyuki Nishimura , Mayumi Asano , Yuichi Ono , Koji Morimoto , Masakazu Takeuchi , Yoko Inoue , Toshio Imai , Yoshimi Takai
Inventor: Miyuki Nishimura , Mayumi Asano , Yuichi Ono , Koji Morimoto , Masakazu Takeuchi , Yoko Inoue , Toshio Imai , Yoshimi Takai
CPC classification number: C07K14/47 , C07K14/705
Abstract: A mouse cDNA library from gene fragments encoding proteins localizing at cell-cell junctions was screened by a technique visualizing localization of a protein to to identify a junction-enriched and -associated protein, JEAP. GenBank homology search was performed based on the sequence. Based on the obtained sequence, a mouse cDNA library was screened to identify JEAP-2. By using prepared antibodies against these proteins, it was revealed that these proteins express specifically at tight junctions, in particular, tight junctions in exocrine glands.
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公开(公告)号:US6008110A
公开(公告)日:1999-12-28
申请号:US799696
申请日:1997-02-11
Applicant: Shuichi Samata , Yoshiaki Matsushita , Yoko Inoue
Inventor: Shuichi Samata , Yoshiaki Matsushita , Yoko Inoue
IPC: H01L21/20 , H01L21/322 , H01L21/762 , H01L21/30
CPC classification number: H01L21/76251 , H01L21/2007 , H01L21/3226
Abstract: A semiconductor substrate has a support substrate formed of monocrystal silicon, an oxide film formed on the support substrate and a thin film of monocrystal silicon formed on the oxide film. The support substrate is a high-concentration P-type substrate to which boron is so doped that a resistivity of the support base is 0.1 .OMEGA..cm or less. In manufacturing: boron is into the support base so that a resistivity of the support base is 0.1 .OMEGA..cm or less; a silicon substrate on which the thin film of monocrystal silicon is formed is heated at 1100.degree. C. or higher for 30 min or longer within a reducing atmosphere; the heat treated silicon substrate is attached to the high-concentration P-type support substrate via the oxide film formed on a surface of any one of the support substrate and the P-type silicon substrate and the attached substrates are heated at 950.degree. C. or higher for 10 min or longer to bond the attached substrates together; and the bonded silicon substrate is thinned.
Abstract translation: 半导体衬底具有由单晶硅形成的支撑衬底,形成在支撑衬底上的氧化膜和形成在氧化膜上的单晶硅薄膜。 支撑衬底是这样掺杂硼的高浓度P型衬底,支撑衬底的电阻率为0.1欧姆·厘米或更小。 在制造中:硼进入支撑基底,使得支撑基底的电阻率为0.1欧米亚或更小; 在其上形成单晶硅薄膜的硅衬底在还原气氛中在1100℃或更高温度下加热30分钟或更长时间; 热处理硅基板经由形成在支撑基板和P型硅基板中的任一个的表面上的氧化膜附着到高浓度P型支撑基板上,并将附着的基板在950℃下加热。 或更高10分钟或更长时间将附着的基底粘合在一起; 并且键合硅衬底变薄。
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