公开(公告)号：US20130119234A1

公开(公告)日：2013-05-16

申请号：US13615424

申请日：2012-09-13

Applicant: Yong-Jei LEE ,  Young-Gu JIN ,  Tae-Yon LEE ,  Yoon-Dong PARK ,  Eric R. FOSSUM

Inventor： Yong-Jei LEE ,  Young-Gu JIN ,  Tae-Yon LEE ,  Yoon-Dong PARK ,  Eric R. FOSSUM

IPC: H01L27/146 ,  H01L31/103 ,  H01L31/105 ,  H01L31/101

CPC classification number: H01L27/14609 ,  H01L27/1461 ,  H01L31/103 ,  H01L31/105 ,  H01L31/1808 ,  Y02E10/50

Abstract: A unit pixel of a three-dimensional image sensor includes a non-silicon photodetector and at least one readout circuit. The non-silicon photodetector is formed at a silicon substrate, and the non-silicon photodetector comprising at least one of non-silicon materials to generate a photocharge in response to incident light. The at least one readout circuit is formed at the silicon substrate, the at least one readout circuit outputs a sensing signal based on the photocharge, and the sensing signal generates depth information on a distance to an object.

Abstract translation: 三维图像传感器的单位像素包括非硅光电检测器和至少一个读出电路。 非硅光电检测器形成在硅衬底上，非硅光电探测器包括至少一种非硅材料，以响应于入射光产生光电荷。 所述至少一个读出电路形成在所述硅衬底处，所述至少一个读出电路基于所述光电荷输出感测信号，并且所述感测信号产生与物体的距离的深度信息。

公开(公告)号：US20130020463A1

公开(公告)日：2013-01-24

申请号：US13550838

申请日：2012-07-17

Applicant: Tae-Yon Lee ,  Yoon-Dong Park ,  Yong-Jei Lee ,  Seoung-Hyun Kim ,  Joo-Yeong Gong ,  Sung-Kwon Hong

Inventor： Tae-Yon Lee ,  Yoon-Dong Park ,  Yong-Jei Lee ,  Seoung-Hyun Kim ,  Joo-Yeong Gong ,  Sung-Kwon Hong

IPC: G01J1/44

CPC classification number: H04N5/357 ,  H04N5/3696 ,  H04N5/3745 ,  H04N5/378

Abstract: In a method of operating an image sensor, a noise voltage of a floating diffusion region is sampled after a reset voltage is applied to the floating diffusion region. A storage region, in which a photo-charge is stored, is electrically connected to the floating diffusion region after sampling the noise voltage, and a demodulation voltage of the floating diffusion region is sampled after the storage region and the floating diffusion region are electrically-connected. A voltage is determined based on the noise voltage and the demodulation voltage.

Abstract translation: 在操作图像传感器的方法中，在对浮动扩散区域施加复位电压之后，对浮动扩散区域的噪声电压进行采样。 在对噪声电压进行采样之后，存储光电荷的存储区域与浮动扩散区域电连接，并且在存储区域和浮动扩散区域电气化之后对浮动扩散区域的解调电压进行采样， 连接的。 基于噪声电压和解调电压确定电压。

公开(公告)号：US20100134668A1

公开(公告)日：2010-06-03

申请号：US12591721

申请日：2009-11-30

Applicant: Jong Eun Park ,  Yong Jei Lee ,  Jung Chak Ahn ,  Dong-Yoon Jang

Inventor： Jong Eun Park ,  Yong Jei Lee ,  Jung Chak Ahn ,  Dong-Yoon Jang

IPC: H04N5/335 ,  H01L31/0352

CPC classification number: H01L27/1463 ,  H01L27/14629 ,  H01L27/1464

Abstract: An image sensor includes a plurality of wells for isolating a plurality of photodiodes from each other. Each of the wells includes a P-type well region and an N-type well region configured to receive a positive bias voltage. The image sensor provides a clearer image by suppressing a blooming effect and a dark current.

Abstract translation: 图像传感器包括用于将多个光电二极管彼此隔离的多个阱。 每个阱包括配置成接收正偏置电压的P型阱区和N型阱区。 图像传感器通过抑制起霜效果和暗电流来提供更清晰的图像。

公开(公告)号：US20100045836A1

公开(公告)日：2010-02-25

申请号：US12461608

申请日：2009-08-18

Applicant: Yong Jei Lee ,  Jung Chak Ahn ,  Jong Eun Park ,  Dong-Yoon Jang

Inventor： Yong Jei Lee ,  Jung Chak Ahn ,  Jong Eun Park ,  Dong-Yoon Jang

IPC: H04N5/335 ,  H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14641

Abstract: An image sensor includes a conductive well in a semiconductor substrate, a photo sensitive device (PSD) in the semiconductor substrate below the conductive well, the PSD and conductive well overlapping each other, and a charge transmission unit in the semiconductor substrate and adjacent to the conductive well, the charge transmission unit having a structure of a recessed gate and being positioned in a recess region of the semiconductor substrate.

Abstract translation: 图像传感器包括在半导体衬底中的导电阱，在导电阱下方的半导体衬底中的光敏器件（PSD），PSD和导电阱彼此重叠的光敏器件（PSD）以及半导体衬底中的电荷传输单元 所述电荷传输单元具有凹入栅极的结构并且位于所述半导体衬底的凹部区域中。