公开(公告)号：US12084764B2

公开(公告)日：2024-09-10

申请号：US17351096

申请日：2021-06-17

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Aaron Dangerfield ,  Mark Joseph Saly ,  David Michael Thompson ,  Susmit Singha Roy ,  Regina Freed

IPC: C23C16/455 ,  G03F7/16

CPC classification number: C23C16/45538 ,  G03F7/167 ,  C23C16/45527 ,  C23C16/45529

Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method for forming a photoresist layer over a substrate in a vacuum chamber comprises providing a metal precursor vapor into the vacuum chamber. In an embodiment, the method further comprises providing an oxidant vapor into the vacuum chamber, where a reaction between the metal precursor vapor and the oxidant vapor results in the formation of the photoresist layer on a surface of the substrate. In an embodiment, the photoresist layer is a metal oxo containing material.

公开(公告)号：US20240247370A1

公开(公告)日：2024-07-25

申请号：US18099459

申请日：2023-01-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Jeffrey W. Anthis ,  Nasrin Kazem ,  Lakmal Charidu Kalutarage ,  Jayden Stephen John Shackerley Potter ,  Thomas Joseph Knisley ,  Lisa Enman

IPC: C23C16/40 ,  C23C16/455 ,  H01B1/08 ,  H01L21/285 ,  H01L33/42

CPC classification number: C23C16/40 ,  C23C16/45536 ,  C23C16/45553 ,  H01B1/08 ,  H01L21/28568 ,  H01L33/42 ,  H01L2933/0016

Abstract: A method includes depositing a coating including stoichiometric one-to-one ruthenium oxide (RuO) onto a surface of a substrate. The coating is deposited by performing an atomic layer deposition (ALD) process using at least one precursor.

公开(公告)号：US20230290646A1

公开(公告)日：2023-09-14

申请号：US18198743

申请日：2023-05-17

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Mark Joseph Saly ,  Bhaskar Jyoti Bhuyan ,  Madhur Sachan ,  Regina Freed

IPC: H01L21/3213 ,  G03F7/26 ,  C23F4/02 ,  G03F7/004 ,  G03F7/36

CPC classification number: H01L21/32135 ,  G03F7/265 ,  C23F4/02 ,  G03F7/0043 ,  G03F7/36 ,  G03F7/0042

Abstract: Embodiments disclosed herein include methods of developing a metal oxo photoresist. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a vacuum chamber, where the metal oxo photoresist comprises exposed regions and unexposed regions. In an embodiment, the unexposed regions comprise a higher carbon concentration than the exposed regions. The method may further comprise vaporizing a halogenating agent into the vacuum chamber, where the halogenating agent reacts with either the unexposed regions or the exposed regions to produce a volatile byproduct. In an embodiment, the method may further comprise purging the vacuum chamber.

公开(公告)号：US20220199406A1

公开(公告)日：2022-06-23

申请号：US17534287

申请日：2021-11-23

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Mark Joseph Saly ,  Ruiying Hao ,  Wayne French ,  Kelvin Chan

IPC: H01L21/033 ,  H01J37/32 ,  G03F7/004 ,  G03F7/16

Abstract: Embodiments disclosed herein include a method of forming a metal-oxo photoresist on a substrate. In an embodiment, the method comprises repeating a deposition cycle, where each iteration of the deposition cycle comprises: a) flowing a metal precursor into a chamber comprising the substrate; and b) flowing an oxidant into the chamber, where the oxidant and the metal precursor react to form the metal-oxo photoresist.

公开(公告)号：US20220026807A1

公开(公告)日：2022-01-27

申请号：US17356304

申请日：2021-06-23

Applicant: Applied Materials, Inc

Inventor： Lakmal Charidu Kalutarage ,  Mark Joseph Saly ,  Bhaskar Jyoti Bhuyan ,  Thomas Joseph Knisley ,  Kelvin Chan ,  Regina Germanie Freed ,  David Michael Thompson ,  Susmit Singha Roy ,  Madhur Sachan

IPC: G03F7/16 ,  G03F7/004 ,  C23C16/40 ,  C23C16/50 ,  C23C16/455

Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method comprises forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, and forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor.

公开(公告)号：US20220002869A1

公开(公告)日：2022-01-06

申请号：US17351096

申请日：2021-06-17

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Aaron Dangerfield ,  Mark Joseph Saly ,  David Michael Thompson ,  Susmit Singha Roy ,  Regina Freed

IPC: C23C16/455 ,  G03F7/16

Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method for forming a photoresist layer over a substrate in a vacuum chamber comprises providing a metal precursor vapor into the vacuum chamber. In an embodiment, the method further comprises providing an oxidant vapor into the vacuum chamber, where a reaction between the metal precursor vapor and the oxidant vapor results in the formation of the photoresist layer on a surface of the substrate. In an embodiment, the photoresist layer is a metal oxo containing material.

公开(公告)号：US10985009B2

公开(公告)日：2021-04-20

申请号：US16374345

申请日：2019-04-03

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Mark Saly ,  David Thompson ,  William John Durand ,  Kelvin Chan ,  Hanhong Chen ,  Philip Allan Kraus

IPC: H01L21/02 ,  C23C16/513 ,  C23C16/26

Abstract: Embodiments include a method for forming a carbon containing film. In an embodiment, the method comprises flowing a precursor gas into a processing chamber. For example the precursor gas comprises carbon containing molecules. In an embodiment, the method further comprises flowing a co-reactant gas into the processing chamber. In an embodiment, the method further comprises striking a plasma in the processing chamber. In an embodiment plasma activated co-reactant molecules initiate polymerization of the carbon containing molecules in the precursor gas. Embodiments may also include a method that further comprises depositing a carbon containing film onto a substrate in the processing chamber.

公开(公告)号：US20190333760A1

公开(公告)日：2019-10-31

申请号：US16374345

申请日：2019-04-03

Applicant: Applied Materials, Inc

Inventor： Lakmal Charidu Kalutarage ,  Mark Saly ,  David Thompson ,  William John Durand ,  Kelvin Chan ,  Hanhong Chen ,  Philip Allan Kraus

IPC: H01L21/02 ,  C23C16/26 ,  C23C16/513

Abstract: Embodiments include a method for forming a carbon containing film. In an embodiment, the method comprises flowing a precursor gas into a processing chamber. For example the precursor gas comprises carbon containing molecules. In an embodiment, the method further comprises flowing a co-reactant gas into the processing chamber. In an embodiment, the method further comprises striking a plasma in the processing chamber. In an embodiment plasma activated co-reactant molecules initiate polymerization of the carbon containing molecules in the precursor gas. Embodiments may also include a method that further comprises depositing a carbon containing film onto a substrate in the processing chamber.