Heated Plasma Flood Gun Sweeper
    22.
    发明申请

    公开(公告)号:US20240371602A1

    公开(公告)日:2024-11-07

    申请号:US18143666

    申请日:2023-05-05

    Abstract: An ion implanter that includes an ion source to generate an ion beam, a platen disposed in a process chamber to support a workpiece that is treated with the ion beam, and a plasma flood gun that results in fewer particles in the process chamber is disclosed. The plasma flood gun includes at least one plasma chamber, each having at least one aperture through which low energy ions and electrons are emitted. A sweeper is located near the aperture, positioned so as to be between the aperture and the upstream components. The sweeper is heated using resistive elements or a halogen lamp so as to elevate its temperature, which limited the amount of deposition that occurs on the sweeper.

    Ion Source With Biased Extraction Plate

    公开(公告)号:US20210134569A1

    公开(公告)日:2021-05-06

    申请号:US17150031

    申请日:2021-01-15

    Abstract: An ion source having an electrically isolated extraction plate is disclosed. By isolating the extraction plate, a different voltage can be applied to the extraction plate than to the body of the arc chamber. By applying a more positive voltage to the extraction plate, more efficient ion source operation with higher plasma density can be achieved. In this mode the plasma potential is increased, and the electrostatic sheath reduces losses of electrons to the chamber walls. By applying a more negative voltage, an ion rich sheath adjacent to the extraction aperture can be created. In this mode, conditioning and cleaning of the extraction plate is achieved via ion bombardment. Further, in certain embodiments, the voltage applied to the extraction plate can be pulsed to allow ion extraction and cleaning to occur simultaneously.

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