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公开(公告)号：US20200343071A1
公开(公告)日：2020-10-29
申请号：US16923304
申请日：2020-07-08
Applicant: APPLIED Materials, Inc.
Inventor： Bon-Woong Koo , Svetlana Radovanov , Frank Sinclair , You Chia Li , Peter Ewing , Ajdin Sarajlic , Christopher A. Rowland , Nunzio Carbone
IPC: H01J37/08 , H01J37/317
Abstract: Provided herein are approaches for increasing efficiency of ion sources. In some embodiments, an apparatus, such as an ion source, may include a chamber housing having a first end wall and a second end wall, and an extraction plate coupled to at least one of the first end wall and the second end wall. The extraction plate may include an extraction aperture. The apparatus may further include a tubular cathode extending between the first end wall and the second end wall.
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公开(公告)号：US20170203364A1
公开(公告)日：2017-07-20
申请号：US15326910
申请日：2015-07-16
Applicant: Applied Materials, Inc.
Inventor： Kartik Ramaswamy , Anantha K. Subramani , Kasiraman Krishnan , Jennifer Y. Sun , Srinivas D. Nemani , Thomas B. Brezoczky , Christopher A. Rowland , Simon Yavelberg , Swaminathan Srinivasan , Nag B. Patibandla , Ellie Y. Yieh , Hou T. Ng
IPC: B22F3/105 , B33Y30/00 , B33Y50/02 , B28B1/00 , B23K26/70 , B23K10/02 , B23K10/00 , B23K26/342 , B23K26/00 , B33Y10/00 , B22F1/00
CPC classification number: B22F3/1055 , B22F1/0003 , B22F2003/1051 , B22F2003/1057 , B22F2202/13 , B22F2301/205 , B22F2998/10 , B23K10/006 , B23K10/027 , B23K26/0006 , B23K26/342 , B23K26/702 , B23K2103/14 , B28B1/001 , B29C64/153 , B33Y10/00 , B33Y30/00 , B33Y50/02 , G05B2219/49007
Abstract: An additive manufacturing system includes a platen, a feed material dispenser apparatus configured to deliver a feed material over the platen, a laser configured to produce a laser beam, a controller configured to direct the laser beam to locations specified by data stored in a computer-readable medium to cause the feed material to fuse, and a plasma source configured to produce ions that are directed to substantially the same location on the platen as the laser beam.
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公开(公告)号：US10904996B2
公开(公告)日：2021-01-26
申请号：US15710667
申请日：2017-09-20
Applicant: Applied Materials, Inc.
Inventor： Travis Lee Koh , Haitao Wang , Philip Allan Kraus , Vijay D. Parkhe , Daniel Distaso , Christopher A. Rowland , Mark Markovsky , Robert Casanova
Abstract: Embodiments described herein generally relate to plasma assisted or plasma enhanced processing chambers. More specifically, embodiments herein relate to electrostatic chucking (ESC) substrate supports configured to provide pulsed DC voltage, and methods of applying a pulsed DC voltage, to a substrate during plasma assisted or plasma enhanced semiconductor manufacturing processes.
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4.发明授权公开(公告)号：US12106936B2
公开(公告)日：2024-10-01
申请号：US18214355
申请日：2023-06-26
Applicant: Applied Materials, Inc.
Inventor： Peter F. Kurunczi , Morgan Evans , Joseph C. Olson , Christopher A. Rowland , James Buonodono
IPC: H01J37/20 , H01J37/08 , H01J37/305
CPC classification number: H01J37/3053 , H01J37/08 , H01J37/20 , H01J2237/0041 , H01J2237/0822 , H01J2237/20228 , H01J2237/3174
Abstract: A system may include a substrate stage, configured to support a substrate, where a main surface of the substrate defines a substrate plane. The system may include an ion source, including an extraction assembly that is oriented to direct an ion beam to the substrate along a trajectory defining a non-zero angle of incidence with respect to a perpendicular to the substrate plane. The system may include a radical source oriented to direct a radical beam to the substrate along a trajectory defining the non-zero angle of incidence with respect to a perpendicular to the substrate plane. The substrate stage may be further configured to scan the substrate along a first direction, lying with the substrate plane, while the main surface of the substrate is oriented within the substrate plane.
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公开(公告)号：US11424097B2
公开(公告)日：2022-08-23
申请号：US16923304
申请日：2020-07-08
Applicant: APPLIED Materials, Inc.
Inventor： Bon-Woong Koo , Svetlana Radovanov , Frank Sinclair , You Chia Li , Peter Ewing , Ajdin Sarajlic , Christopher A. Rowland , Nunzio Carbone
IPC: H01J37/08 , H01J37/317
Abstract: Provided herein are approaches for increasing efficiency of ion sources. In some embodiments, an apparatus, such as an ion source, may include a chamber housing having a first end wall and a second end wall, and an extraction plate coupled to at least one of the first end wall and the second end wall. The extraction plate may include an extraction aperture. The apparatus may further include a tubular cathode extending between the first end wall and the second end wall.
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Patent Agency Ranking
公开(公告)号：US20180221949A1
公开(公告)日：2018-08-09
申请号：US15941988
申请日：2018-03-30
Applicant: Applied Materials, Inc.
Inventor： Christopher A. Rowland , Anantha K. Subramani , Kasiraman Krishnan , Kartik Ramaswamy , Thomas B. Brezoczky , Swaminathan Srinivasan , Jennifer Y. Sun , Simon Yavelberg , Srinivas D. Nemani , Nag B. Patibandla , Hou T. Ng
CPC classification number: B22F3/008 , B22F2003/1051 , B22F2003/1057 , B22F2998/10 , B23K10/006 , B23K10/027 , B28B1/001 , B29C64/153 , B33Y10/00 , B33Y30/00 , B33Y50/02 , H05B3/0061
Abstract: An additive manufacturing system includes a platen, a dispenser configured to deliver a powder in a linear region that extends across less than all of a width of the platen, a drive system configured to move the dispenser along the first axis and a perpendicular second axis, a controller, and an energy source configured to selectively fuse a layer of powder. The controller is configured to cause the drive system to move the dispenser along the second axis a first time such that the linear region makes a first sweep along the second axis to deposit the powder in a first swath over the platen, thereafter along the first axis, and thereafter along the second axis a second time such that the first linear region makes a second sweep along the second axis to deposit the powder in a parallel second swath over the platen.
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公开(公告)号：US20170182556A1
公开(公告)日：2017-06-29
申请号：US15327281
申请日：2015-07-16
Applicant: Applied Materials, Inc.
Inventor： Kartik Ramaswamy , Anantha K. Subramani , Kasiraman Krishnan , Jennifer Y. Sun , Thomas B. Brezoczky , Christopher A. Rowland , Srinivas D. Nemani , Swaminathan Srinivasan , Simon Yavelberg , Ellie Y. Yieh , Hou T. Ng
IPC: B22F3/105 , B33Y30/00 , B33Y40/00 , B33Y50/02 , B28B17/00 , B23K26/70 , B23K26/14 , B29C67/00 , B28B1/00 , B33Y10/00 , B23K26/342
CPC classification number: B22F3/1055 , B22F1/0088 , B22F2003/1056 , B22F2003/1057 , B23K26/1464 , B23K26/342 , B23K26/702 , B28B1/001 , B28B17/0081 , B29C64/153 , B29C64/20 , B29C64/386 , B33Y10/00 , B33Y30/00 , B33Y40/00 , B33Y50/02 , Y02P10/295
Abstract: An additive manufacturing system includes a platen, a feed material dispenser apparatus configured to deliver a feed material onto the platen, a laser source configured to produce a laser beam during use of the additive manufacturing system, a controller configured to direct the laser beam to locations on the platen specified by a computer aided design program to cause the feed material to fuse, a gas source configured to supply gas, and a nozzle configured to accelerate and direct the gas to substantially the same location on the platen as the laser beam.
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8.发明申请公开(公告)号：US20170203363A1
公开(公告)日：2017-07-20
申请号：US15324672
申请日：2015-07-08
Applicant: APPLIED MATERIALS ,INC.
Inventor： Christopher A. Rowland , Anantha K. Subramani , Kasiraman Krishnan , Kartik Ramaswamy , Thomas B. Brezoczky , Swaminathan Srinivasan , Jennifer Y. Sun , Simon Yavelberg , Srinivas D. Nemani , Nag B. Patibandla , Hou T. Ng
CPC classification number: B22F3/008 , B22F2003/1051 , B22F2003/1057 , B22F2998/10 , B23K10/006 , B23K10/027 , B28B1/001 , B29C64/153 , B33Y10/00 , B33Y30/00 , B33Y50/02 , H05B3/0061
Abstract: An additive manufacturing system that includes a platen, a feed material delivery system configured to deliver feed material to a location on the platen specified by a computer aided design program and a heat source configured to raise a temperature of the feed material simultaneously across all of the layer or across a region that extends across a width of the platen and scans the region across a length of the platen. The heat source can be an array of heat lamps, or a plasma source.
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9.发明公开公开(公告)号：US20230335375A1
公开(公告)日：2023-10-19
申请号：US18214355
申请日：2023-06-26
Applicant: Applied Materials, Inc.
Inventor： Peter F. Kurunczi , Morgan Evans , Joseph C. Olson , Christopher A. Rowland , James Buonodono
IPC: H01J37/305 , H01J37/20 , H01J37/08
CPC classification number: H01J37/3053 , H01J37/20 , H01J37/08 , H01J2237/3174 , H01J2237/0822 , H01J2237/0041 , H01J2237/20228
Abstract: A system may include a substrate stage, configured to support a substrate, where a main surface of the substrate defines a substrate plane. The system may include an ion source, including an extraction assembly that is oriented to direct an ion beam to the substrate along a trajectory defining a non-zero angle of incidence with respect to a perpendicular to the substrate plane. The system may include a radical source oriented to direct a radical beam to the substrate along a trajectory defining the non-zero angle of incidence with respect to a perpendicular to the substrate plane. The substrate stage may be further configured to scan the substrate along a first direction, lying with the substrate plane, while the main surface of the substrate is oriented within the substrate plane.
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10.发明授权公开(公告)号：US11715621B2
公开(公告)日：2023-08-01
申请号：US16535885
申请日：2019-08-08
Applicant: APPLIED Materials, Inc.
Inventor： Peter F. Kurunczi , Morgan Evans , Joseph C. Olson , Christopher A. Rowland , James Buonodono
IPC: H01J37/30 , H01J37/305 , H01J37/20 , H01J37/08
CPC classification number: H01J37/3053 , H01J37/08 , H01J37/20 , H01J2237/0041 , H01J2237/0822 , H01J2237/20228 , H01J2237/3174
Abstract: A system may include a substrate stage, configured to support a substrate, where a main surface of the substrate defines a substrate plane. The system may include an ion source, including an extraction assembly that is oriented to direct an ion beam to the substrate along a trajectory defining a non-zero angle of incidence with respect to a perpendicular to the substrate plane. The system may include a radical source oriented to direct a radical beam to the substrate along a trajectory defining the non-zero angle of incidence with respect to a perpendicular to the substrate plane. The substrate stage may be further configured to scan the substrate along a first direction, lying with the substrate plane, while the main surface of the substrate is oriented within the substrate plane.
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