公开(公告)号：US20240047228A1

公开(公告)日：2024-02-08

申请号：US17816944

申请日：2022-08-02

Applicant: Advanced Micro Devices, Inc.

Inventor： Sri Ranga Sai Boyapati ,  Deepak Vasant Kulkarni ,  Raja Swaminathan ,  Brett P. Wilkerson ,  Arsalan Alam

IPC: H01L21/48 ,  H01L23/64 ,  H01L23/498

CPC classification number: H01L21/486 ,  H01L21/4857 ,  H01L23/642 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49894

Abstract: A disclosed method can include (i) positioning a first surface of a component of a semiconductor device on a first plated through-hole, (ii) covering, with a layer of dielectric material, at least a second surface of the component that is opposite the first surface of the component, (iii) removing a portion of the layer of dielectric material covering the second surface of the component to form at least one cavity, and (iv) depositing conductive material in the cavity to form a second plated through-hole on the second surface of the component. Various other apparatuses, systems, and methods are also disclosed.

公开(公告)号：US11709327B2

公开(公告)日：2023-07-25

申请号：US17361033

申请日：2021-06-28

Applicant: ADVANCED MICRO DEVICES, INC.

Inventor： Brett P. Wilkerson ,  Raja Swaminathan ,  Kong Toon Ng ,  Rahul Agarwal

IPC: G02B6/42 ,  G02B6/43

CPC classification number: G02B6/4274 ,  G02B6/425 ,  G02B6/4255 ,  G02B6/43

Abstract: A semiconductor package includes a first mold layer at least partially encasing at least one photonic integrated circuit. A redistribution layer structure is fabricated on the first mold layer, the redistribution layer structure including dielectric material and conductive structures. A second mold layer at least partially encasing at least one semiconductor chip is fabricated on the redistribution layer structure. The redistribution layer structure provides electrical pathways between the at least one semiconductor chip and the at least one photonic integrated circuit. One or more voids are defined in the second mold layer in an area above an optical interface of the at least one photonic integrated circuit such that light is transmittable through dielectric material above the optical interface.

公开(公告)号：US20230207544A1

公开(公告)日：2023-06-29

申请号：US17560691

申请日：2021-12-23

Applicant: Advanced Micro Devices, Inc.

Inventor： Gabriel H. Loh ,  Rahul Agarwal ,  Raja Swaminathan ,  Brett P. Wilkerson

IPC: H01L25/18 ,  H01L23/00 ,  H01L25/00 ,  H01L21/768

CPC classification number: H01L25/18 ,  H01L24/16 ,  H01L25/50 ,  H01L21/76898 ,  H01L2224/16145 ,  H01L2224/16225

Abstract: A semiconductor device includes one or more active devices disposed between a processor die and a package substrate. The semiconductor device includes a first layer with a processor die, a second layer with one or more active devices, and a third layer with a package substrate, where the second layer is disposed between the first and third layers. The one or more active devices are semiconductor-based devices, such as voltage regulators, that participate in supplying power to the processor die and are electrically connected to the processor die using various connection configurations. The implementations use short path lengths for improved performance with a compact structure that avoids the use of edge wiring or interposers without occupying processor die space. Implementations include the use of through-silicon vias (TSVs) to provide short path lengths while reducing the number of connection resources used by the one or more power components.

公开(公告)号：US20220392882A1

公开(公告)日：2022-12-08

申请号：US17891444

申请日：2022-08-19

Applicant: Advanced Micro Devices, Inc.

Inventor： Brett P. Wilkerson ,  Milind S. Bhagavat ,  Rahul Agarwal ,  Dmitri Yudanov

IPC: H01L25/18 ,  H01L23/367 ,  H01L23/00 ,  H01L25/00 ,  H01L23/48

Abstract: A three-dimensional integrated circuit includes a first die structure having a first geometry. The first die structure includes a first region that operates with a first power density and a second region that operates with a second power density. The first power density is less than the second power density. The three-dimensional integrated circuit includes a second die structure having a second geometry. A stacked portion of the second die structure is aligned with the first region. The three-dimensional integrated circuit includes an additional die structure stacked with the first die structure and the second die structure. The additional die structure has the first geometry or the second geometry.

公开(公告)号：US20190393124A1

公开(公告)日：2019-12-26

申请号：US16563138

申请日：2019-09-06

Applicant: Advanced Micro Devices, Inc.

Inventor： John Wuu ,  Samuel Naffziger ,  Patrick J. Shyvers ,  Milind S. Bhagavat ,  Kaushik Mysore ,  Brett P. Wilkerson

IPC: H01L23/367 ,  H01L25/00 ,  H01L25/065

Abstract: Various semiconductor chip devices with stacked chips are disclosed. In one aspect, a semiconductor chip device is provided. The semiconductor chip device includes a first semiconductor chip that has a floor plan with a high heat producing area and a low heat producing area. At least one second semiconductor chip is stacked on the low heat producing area. The semiconductor chip device also includes means for transferring heat from the high heat producing area.