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公开(公告)号:US10964652B2
公开(公告)日:2021-03-30
申请号:US16388829
申请日:2019-04-18
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Chien-Hua Chen , Sheng-Chi Hsieh
IPC: H01L27/14 , H01L23/66 , H01L23/31 , H01L23/538 , H01L23/00 , H01L21/56 , H01L21/48 , H01Q1/22 , H01Q9/16
Abstract: A semiconductor device package and a method of manufacturing the same are provided. The semiconductor device package includes a circuit layer, a first package body, a first antenna and an electronic component. The circuit layer has a first surface and a second surface opposite to the first surface. The first package body is disposed on the first surface of the circuit layer. The first antenna penetrates the first package body and is electrically connected to the circuit layer. The electronic component is disposed on the second surface of the circuit layer.
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公开(公告)号:US09837352B2
公开(公告)日:2017-12-05
申请号:US15179683
申请日:2016-06-10
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Yung-Shun Chang , Chien-Hua Chen , Teck-Chong Lee
IPC: H01L29/00 , H01L23/522 , H01L21/48 , H01L21/56 , H01L23/31 , H01L23/498 , H01L21/60 , H01L23/00
CPC classification number: H01L23/5227 , H01L21/4853 , H01L21/486 , H01L21/561 , H01L21/565 , H01L21/568 , H01L23/3114 , H01L23/3128 , H01L23/49827 , H01L23/49838 , H01L23/5223 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/97 , H01L2021/60022 , H01L2224/0401 , H01L2224/131 , H01L2224/16238 , H01L2224/81447 , H01L2224/97 , H01L2924/15311 , H01L2924/157 , H01L2924/15788 , H01L2924/014 , H01L2924/00014 , H01L2224/81
Abstract: A semiconductor device includes a substrate, at least one integrated passive device, a first redistribution layer, a second redistribution layer, and conductive vias. The at least one integrated passive device includes at least one capacitor disposed adjacent to a first surface of the substrate. The first redistribution layer is disposed adjacent to the first surface of the substrate. The second redistribution layer is disposed adjacent to a second surface of the substrate. The conductive vias extend through the substrate, and electrically connect the first redistribution layer and the second redistribution layer.
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