公开(公告)号：US10332862B2

公开(公告)日：2019-06-25

申请号：US15698451

申请日：2017-09-07

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Bo-Syun Chen ,  Tang-Yuan Chen ,  Yu-Chang Chen ,  Jin-Feng Yang ,  Chin-Li Kao ,  Meng-Kai Shih

IPC: H01L25/00 ,  H01L25/065

Abstract: A semiconductor package structure includes a first substrate, at least one first semiconductor element and a second substrate. The first semiconductor element is attached to the first substrate. The second substrate defines a cavity and includes a plurality of thermal vias. One end of each of the thermal vias is exposed in the cavity, and the first semiconductor element is disposed within the cavity and thermally connected to the thermal vias.

公开(公告)号：US09478500B2

公开(公告)日：2016-10-25

申请号：US14624331

申请日：2015-02-17

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Chia-Ching Chen ,  Chin-Li Kao ,  Hung-Jen Chang ,  Tang-Yuan Chen ,  Wei-Hong Lai

IPC: H01L21/48 ,  H01L23/538 ,  H01L23/498 ,  H01L21/683 ,  H05K1/11

CPC classification number: H01L23/5389 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/6835 ,  H01L23/13 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/49838 ,  H01L23/5385 ,  H01L2221/68345 ,  H01L2224/16227 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/15331 ,  H05K3/205 ,  H05K2201/10378

Abstract: Described herein are interposer substrate designs for warpage control, semiconductor structures including said interposer substrates, and fabricating processes thereof. An interposer substrate defines a cavity and further includes a reinforcement structure, wherein the reinforcement structure is used to control warpage of the semiconductor package structure.

Abstract translation: 这里描述了用于翘曲控制的插入式衬底设计，包括所述插入器衬底的半导体结构及其制造方法。 插入器基板限定空腔并且还包括加强结构，其中加强结构用于控制半导体封装结构的翘曲。