公开(公告)号：US11164756B2

公开(公告)日：2021-11-02

申请号：US16813364

申请日：2020-03-09

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ying-Xu Lu ,  Tang-Yuan Chen ,  Jin-Yuan Lai ,  Tse-Chuan Chou ,  Meng-Kai Shih ,  Shin-Luh Tarng

IPC: H01L23/13 ,  H01L23/49 ,  H01L21/56 ,  H01L23/498 ,  H01L23/00

Abstract: The present disclosure relates to a semiconductor device package including a substrate, a semiconductor device and an underfill. The substrate has a first surface and a second surface angled with respect to the first surface. The semiconductor device is mounted on the first surface of the substrate and has a first surface facing the first surface of the substrate and a second surface angled with respect to the first surface of the substrate. The underfill is disposed between the first surface of the semiconductor device and the first surface of the substrate. The second surface of the substrate is located in the substrate and external to a vertical projection of the semiconductor device on the first surface of the substrate. A distance between the second surface of the substrate and an extension of the second surface of the semiconductor device on the first surface of the substrate is less than or equal to twice a distance between the first surface of the semiconductor device and the first surface of the substrate. The second surface of the substrate extends along at least three sides of the semiconductor device.

公开(公告)号：US10985085B2

公开(公告)日：2021-04-20

申请号：US16413467

申请日：2019-05-15

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ian Hu ,  Chih-Pin Hung ,  Meng-Kai Shih

IPC: H01L23/427 ,  H01L25/065 ,  H01L23/367 ,  F28D15/04

Abstract: A thermal conductive device includes a first conductive plate, a second conductive plate, a plurality of wicks and a fluid. The first conductive plate has a first portion adjacent to edges of the first conductive plate and a second portion far away from the edges. The second conductive plate has a first portion adjacent to edges of the first conductive plate and a second portion far away from the edges. The first portion and the second portion of the first conductive plate are respectively connected to the first portion and the second portion of the second conductive plate to define a chamber. The plurality of wicks are disposed within the chamber. The fluid is disposed within the chamber.

公开(公告)号：US10861726B2

公开(公告)日：2020-12-08

申请号：US16138938

申请日：2018-09-21

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Chun Hung Tsai ,  Hsuan Yu Chen ,  Ian Hu ,  Meng-Kai Shih ,  Shin-Luh Tarng

IPC: H01L21/67 ,  G01N21/95 ,  G06T7/00 ,  G01B11/25 ,  G01N21/956

Abstract: An apparatus includes: a first image capture module, a second image capture module, and a first projector. The first image capture module has a first optical axis forming an angle from approximately 70° to approximately 87° with respect to the surface of a carrier. The second image capture module has a first optical axis forming an angle of approximately 90° with respect to the surface of the carrier. The first projector has a first optical axis forming an angle from approximately 40° to approximately 85° with respect to the surface of the carrier.

公开(公告)号：US11375124B2

公开(公告)日：2022-06-28

申请号：US16285000

申请日：2019-02-25

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ming-Han Wang ,  Ian Hu ,  Meng-Kai Shih ,  Hsuan Yu Chen

IPC: H04N5/232 ,  H04N5/247 ,  G06T7/00 ,  H04N5/225

Abstract: An optical measurement equipment includes an adjustment apparatus and at least two image capturing devices. The image capturing devices have a depth-of-field and attached to the adjustment apparatus. The image capturing devices are adjusted by the adjustment apparatus such that a portion to be measured of a workpiece is located within the depth-of-field of the image capturing devices.

公开(公告)号：US10586716B2

公开(公告)日：2020-03-10

申请号：US15619413

申请日：2017-06-09

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ying-Xu Lu ,  Tang-Yuan Chen ,  Jin-Yuan Lai ,  Tse-Chuan Chou ,  Meng-Kai Shih ,  Shin-Luh Tarng

IPC: H01L23/49 ,  H01L21/56 ,  H01L23/498 ,  H01L23/00 ,  H01L23/13

Abstract: The present disclosure relates to a semiconductor device package including a substrate, a semiconductor device and an underfill. The substrate has a first surface and a second surface angled with respect to the first surface. The semiconductor device is mounted on the first surface of the substrate and has a first surface facing the first surface of the substrate and a second surface angled with respect to the first surface of the substrate. The underfill is disposed between the first surface of the semiconductor device and the first surface of the substrate. The second surface of the substrate is located in the substrate and external to a vertical projection of the semiconductor device on the first surface of the substrate. A distance between the second surface of the substrate and an extension of the second surface of the semiconductor device on the first surface of the substrate is less than or equal to twice a distance between the first surface of the semiconductor device and the first surface of the substrate. The second surface of the substrate extends along at least three sides of the semiconductor device.

公开(公告)号：US10332862B2

公开(公告)日：2019-06-25

申请号：US15698451

申请日：2017-09-07

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Bo-Syun Chen ,  Tang-Yuan Chen ,  Yu-Chang Chen ,  Jin-Feng Yang ,  Chin-Li Kao ,  Meng-Kai Shih

IPC: H01L25/00 ,  H01L25/065

Abstract: A semiconductor package structure includes a first substrate, at least one first semiconductor element and a second substrate. The first semiconductor element is attached to the first substrate. The second substrate defines a cavity and includes a plurality of thermal vias. One end of each of the thermal vias is exposed in the cavity, and the first semiconductor element is disposed within the cavity and thermally connected to the thermal vias.

公开(公告)号：US12166009B2

公开(公告)日：2024-12-10

申请号：US18239722

申请日：2023-08-29

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Tang-Yuan Chen ,  Meng-Kai Shih ,  Teck-Chong Lee ,  Shin-Luh Tarng ,  Chih-Pin Hung

IPC: H01L25/065 ,  H01L21/56 ,  H01L23/00 ,  H01L23/528

Abstract: A semiconductor device package includes a first conductive layer, a second conductive layer and a third conductive layer. The first conductive layer has a first pitch. The second conductive layer has a second pitch and is arranged at two different sides of the first conductive layer. The third conductive layer has a third pitch and is disposed above the first conductive layer and the second conductive layer. The third conductive layer is electrically connected to the first conductive layer. The first pitch is smaller than the third pitch, and the third pitch is smaller than the second pitch.

公开(公告)号：US11742324B2

公开(公告)日：2023-08-29

申请号：US17322764

申请日：2021-05-17

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Tang-Yuan Chen ,  Meng-Kai Shih ,  Teck-Chong Lee ,  Shin-Luh Tarng ,  Chih-Pin Hung

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/528 ,  H01L21/56

CPC classification number: H01L25/0652 ,  H01L21/566 ,  H01L23/5283 ,  H01L24/17 ,  H01L24/33 ,  H01L24/73 ,  H01L2224/0231 ,  H01L2224/02373 ,  H01L2224/02381 ,  H01L2224/73253 ,  H01L2924/3511 ,  H01L2924/381

Abstract: A semiconductor device package includes a first conductive layer, a second conductive layer and a third conductive layer. The first conductive layer has a first pitch. The second conductive layer has a second pitch and is arranged at two different sides of the first conductive layer. The third conductive layer has a third pitch and is disposed above the first conductive layer and the second conductive layer. The third conductive layer is electrically connected to the first conductive layer. The first pitch is smaller than the third pitch, and the third pitch is smaller than the second pitch.

公开(公告)号：US11217502B2

公开(公告)日：2022-01-04

申请号：US16676284

申请日：2019-11-06

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ian Hu ,  Meng-Kai Shih ,  Chih-Pin Hung

IPC: H01L23/367 ,  H01L23/13 ,  H01L23/00 ,  H01L23/427

Abstract: A semiconductor device package includes a substrate, an electronic component disposed on the substrate, a supporting structure disposed on the substrate and surrounding the electronic component, and a heat spreading structure disposed on the supporting structure. A length of the supporting structure and a length of the heat spreading structure are greater than a length of the substrate.

公开(公告)号：US11011496B2

公开(公告)日：2021-05-18

申请号：US16563716

申请日：2019-09-06

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Tang-Yuan Chen ,  Meng-Kai Shih ,  Teck-Chong Lee ,  Shin-Luh Tarng ,  Chih-Pin Hung

IPC: H01L21/56 ,  H01L23/528 ,  H01L23/00 ,  H01L25/065

Abstract: A semiconductor device package includes a first conductive layer, a second conductive layer and a third conductive layer. The first conductive layer has a first pitch. The second conductive layer has a second pitch and is arranged at two different sides of the first conductive layer. The third conductive layer has a third pitch and is disposed above the first conductive layer and the second conductive layer. The third conductive layer is electrically connected to the first conductive layer. The first pitch is smaller than the third pitch, and the third pitch is smaller than the second pitch.