公开(公告)号：US07544343B2

公开(公告)日：2009-06-09

申请号：US11667676

申请日：2005-11-16

申请人： Atsutoshi Arakawa ,  Ryuichi Hirano

发明人： Atsutoshi Arakawa ,  Ryuichi Hirano

IPC分类号： C01B19/04 ,  C30B29/48 ,  H01L29/12

CPC分类号： C30B29/48 ,  C30B11/00 ,  C30B23/02 ,  H01L31/09 ,  H01L31/1832 ,  Y10S977/824

摘要： It is to define the resistivity and the contained amount of impurities of a CdTe system compound semiconductor single crystal and to provide a CdTe system compound semiconductor single crystal which is useful as a substrate for optical devices such as an infrared sensor and the like. In a CdTe system compound semiconductor single crystal for an optical device, a Group 1 (1A) element is included in a range of 5×1014 to 6×1015 cm−3 in the crystal, a total amount of a Group 13 (3B) element and a Group 17 (7B) element included in the crystal is less than 2×1015 cm−3 and less than a total amount of the Group 1 (1A) element, and resistivity of the crystal is in a range of 10 to 104 Ωcm.

摘要翻译： 为了限定CdTe系化合物半导体单晶的电阻率和含有量的杂质，提供可用作红外线传感器等的光学元件的基板的CdTe系化合物半导体单晶。 在用于光学器件的CdTe系统化合物半导体单晶中，第1组（1A）元素在晶体中包括在5×10 14至6×10 15 cm -3的范围内，第13（3B）族元素和基团 包含在晶体中的17（7B）元素小于2×10 15 cm -3且小于第1族（1A）元素的总量，并且晶体的电阻率在10〜104Ω·cm的范围内。

公开(公告)号：US20080247935A1

公开(公告)日：2008-10-09

申请号：US10593036

申请日：2005-02-15

申请人： Kenji Suzuki ,  Ryuichi Hirano ,  Masashi Nakamura

发明人： Kenji Suzuki ,  Ryuichi Hirano ,  Masashi Nakamura

IPC分类号： H01L29/20

CPC分类号： C30B29/40 ,  C30B25/18

摘要： It is to provide a substrate for epitaxial growth, which is capable of improving a surface state of an epitaxial layer at microroughness level. In a substrate for epitaxial growth, when haze is defined as a value calculated by dividing intensity of scattered light obtained when light is incident from a predetermined light source onto a surface of a substrate, by intensity of the incident light from the light source, the haze is not more than 2 ppm all over an effectively used area of the substrate and an off-angle with respect to a plane direction is 0.05 to 0.10°.

摘要翻译： 提供用于外延生长的衬底，其能够在微粗糙度水平下改善外延层的表面状态。 在用于外延生长的基板中，当雾度被定义为通过将光从预定光源入射到基板的表面上时获得的散射光的强度，通过来自光源的入射光的强度来计算， 在基板的有效使用面积上的雾度不超过2ppm，相对于平面方向的偏角为0.05〜0.10°。

公开(公告)号：US20070261631A1

公开(公告)日：2007-11-15

申请号：US11661696

申请日：2005-06-06

申请人： Manabu Kawabe ,  Ryuichi Hirano

发明人： Manabu Kawabe ,  Ryuichi Hirano

IPC分类号： C30B28/00

CPC分类号： C30B25/20 ,  C30B25/16 ,  C30B29/40 ,  H01L21/02392 ,  H01L21/02433 ,  H01L21/02543 ,  H01L21/02576

摘要： It is to provide a method for growing an epitaxial crystal in which the doping conditions are set when an epitaxial crystal having a desired carrier concentration is grown. A method for growing an epitaxial crystal while a dopant is added to a compound semiconductor substrate, comprises: obtaining a relation between an off angle and a doping efficiency with regards to the same type of compound semiconductor substrate in advance; and setting a doping condition for carrying out an epitaxial growth on the compound semiconductor substrate based on the obtained relation and a value of the off angle of the substrate.

摘要翻译： 提供一种生长外延晶体的方法，其中当生长具有所需载流子浓度的外延晶体时，其中设置掺杂条件。 一种将掺杂剂添加到化合物半导体衬底中的生长外延晶体的方法包括：预先获得关于相同类型的化合物半导体衬底的偏角和掺杂效率之间的关系; 以及基于获得的关系和基板的偏离角的值，在化合物半导体基板上设定用于进行外延生长的掺杂条件。

公开(公告)号：US07211142B2

公开(公告)日：2007-05-01

申请号：US10505588

申请日：2002-11-29

申请人： Ryuichi Hirano

发明人： Ryuichi Hirano

IPC分类号： C30B29/48

CPC分类号： C30B11/002 ,  C30B15/10 ,  C30B29/48

摘要： A CdTe single crystal, wherein chlorine concentration in the crystal is between 0.1 and 5.0 ppmwt and resistivity at room temperature is not less than 1.0×109 Ω·cm is obtained by growing the crystal according to one of a vertical gradient freezing method, a horizontal gradient freezing method, a vertical Bridgman method, a horizontal Bridgman method, and a liquid encapsulated Czochralski method by using a CdTe polycrystal, in which 50 to 200 ppmwt of chlorine is doped, as a raw material.

摘要翻译： 一种CdTe单晶，其中晶体中的氯浓度为0.1〜5.0ppm，室温下的电阻率为1.0×10 9Ωcm以上，通过以下方式获得晶体： 垂直梯度冷冻法，水平梯度冷冻法，垂直布里奇曼法，水平布里奇曼法和液体封装的切克劳斯基法，其中掺杂有50-200ppm重量的氯的CdTe多晶为原料。

公开(公告)号：US06562134B1

公开(公告)日：2003-05-13

申请号：US09868087

申请日：2001-06-15

申请人： Hiroshi Maeda ,  Ryuichi Hirano ,  Tetsuya Yamamoto ,  Akira Hichiwa ,  Yoshiaki Kubota

发明人： Hiroshi Maeda ,  Ryuichi Hirano ,  Tetsuya Yamamoto ,  Akira Hichiwa ,  Yoshiaki Kubota

IPC分类号： C30B3500

CPC分类号： C30B11/003 ,  C30B11/00 ,  C30B29/48 ,  Y10T117/1088 ,  Y10T117/1096

摘要： A crystal growth apparatus comprising a heating furnace capable of controlling uniformly the temperature distribution in the same horizontal plane, and a method for producing a single crystal by using the crystal growth apparatus are provided. In the crystal growth apparatus comprising a cylindrical heating furnace (110) having plural heaters (101, 102, 103 and 104) laminated in multi-stage in an axial direction (Z), each heater is disposed for the terminal portions of the adjacent heaters not to be overlapped in the same position, but to be in a mutually separated position, seeing from the axial direction of the heating furnace. Concretely, in case of N (n is a positive integer of three or more) heaters, each heater (101, 102, 103 and 104) is disposed for the terminal portions (110a, 102a, 103a and 104a) of the heaters to be located at each apex of a regular n-gon (n is an integer satisfying 3≦n≦N), seeing from the axial direction Z of the heating furnace.

摘要翻译： 提供一种晶体生长装置，其包括能够均匀地控制相同水平面中的温度分布的加热炉，以及使用晶体生长装置制造单晶的方法。 在包括具有沿轴向（Z）多级层叠的多个加热器（101,102,103和104）的圆筒形加热炉（110）的晶体生长装置中，每个加热器设置在相邻加热器的端子部分 不能在相同的位置重叠，而是从加热炉的轴向观察到彼此分离的位置。 具体地说，在N（n为3以上的整数）加热器的情况下，为加热器的端子部（110a，102a，103a，104a）设置加热器（101,102,103,104） 位于规则n-gon的每个顶点（n是满足3 <= n <= N的整数），从加热炉的轴向Z看。

公开(公告)号：US09076172B1

公开(公告)日：2015-07-07

申请号：US13172374

申请日：2011-06-29

申请人： Jennifer R. O'Twomney ,  Maren Marie Costa ,  Aaron M. Donsbach ,  Devraj Varadhan ,  Marina A. Pai ,  Michael Crutcher ,  Sean M. Scott ,  Anoop Balakrishnan ,  Ryuichi Hirano

发明人： Jennifer R. O'Twomney ,  Maren Marie Costa ,  Aaron M. Donsbach ,  Devraj Varadhan ,  Marina A. Pai ,  Michael Crutcher ,  Sean M. Scott ,  Anoop Balakrishnan ,  Ryuichi Hirano

IPC分类号： G06F15/16 ,  G06Q30/06

CPC分类号： H04L65/403 ,  G06F3/0482 ,  G06F3/04842 ,  G06F17/30038 ,  G06F17/30867 ,  G06F17/3097 ,  G06Q30/0601 ,  G06Q30/0631 ,  H04L67/42

摘要： Disclosed are various embodiments relating to generating profile-based groups to obtain item suggestions. A network page is rendered in a client computing device comprising a topic field to input a topic and a third party criteria selection mechanism to select at least one third party user. The user inputs the topic and the third party criteria. A request for suggestions relating to the topic is then sent from the client computing device to a server computing device.

摘要翻译： 公开了与生成基于简档的组以获得项目建议有关的各种实施例。 在包括主题字段的客户端计算设备中呈现网络页面以输入主题和第三方标准选择机制以选择至少一个第三方用户。 用户输入主题和第三方标准。 然后，从客户计算设备向服务器计算设备发送关于该主题的建议的请求。

公开(公告)号：US08856039B1

公开(公告)日：2014-10-07

申请号：US13012597

申请日：2011-01-24

申请人： Kamlesh T. Talreja ,  Mark Chien ,  Ryuichi Hirano ,  Sean M. Scott ,  Qiang Zhao

发明人： Kamlesh T. Talreja ,  Mark Chien ,  Ryuichi Hirano ,  Sean M. Scott ,  Qiang Zhao

IPC分类号： G06F17/30

CPC分类号： G06F17/30893

摘要： A system is disclosed that integrates secondary content, such as articles retrieved from a collaborative encyclopedia or other content site, into an electronic catalog system or site that hosts an interactive electronic catalog. In some embodiments, the system operates by retrieving secondary content articles from an external system or site, and by supplementing these articles with interactive display elements for accessing related catalog content and/or functions. For example, if an article mentions a particular catalog item or group of catalog items, it may be supplemented with a selectable display element for viewing catalog content associated with the referenced item or item group. The supplemented articles are made available to users via pages of the electronic catalog system or site.

摘要翻译： 公开了将辅助内容（例如从协作百科全书或其他内容站点检索的文章）集成到承载交互式电子目录的电子目录系统或站点的系统。 在一些实施例中，系统通过从外部系统或站点检索次要内容文章并且通过用用于访问相关目录内容和/或功能的交互式显示元素补充这些文章来进行操作。 例如，如果文章提到特定目录项目或目录项目组，则可以用可选择的显示元素补充以查看与所引用的项目或项目组相关联的目录内容。 补充的文章通过电子目录系统或站点的页面提供给用户。

公开(公告)号：US07852397B2

公开(公告)日：2010-12-14

申请号：US11591865

申请日：2006-11-02

申请人： Tsuyoshi Mochizuki ,  Ryuichi Hirano ,  Atsushi Yonetani

发明人： Tsuyoshi Mochizuki ,  Ryuichi Hirano ,  Atsushi Yonetani

IPC分类号： H04N5/225

CPC分类号： G02B21/361 ,  G02B21/362 ,  G03B17/00

摘要： An image pickup apparatus has an image sensor recording image information; a dustproof glass for keeping hermeticity of the periphery of the image sensor, placed in front of the image sensor; an optical filter removably placed in front of the dustproof glass; and a camera mount placed in front of the optical filter. The image pickup apparatus further has a parfocal adjusting device in which a focal position where the optical filter is demounted can be adjusted so as to be nearly equal to the focal position where the optical filter is mounted.

摘要翻译： 图像拾取装置具有图像传感器记录图像信息; 用于保持图像传感器的周边的气密性的防尘玻璃，放置在图像传感器的前面; 可拆卸地放置在防尘玻璃前面的滤光器; 以及放置在滤光器前面的相机安装座。 图像拾取装置还具有其中可以将滤光器被拆卸的焦点位置调整为几乎等于安装有滤光器的焦点位置的对焦调整装置。

公开(公告)号：US20090025629A1

公开(公告)日：2009-01-29

申请号：US12223453

申请日：2007-02-02

申请人： Hideki Kurita ,  Ryuichi Hirano

发明人： Hideki Kurita ,  Ryuichi Hirano

IPC分类号： C30B25/18 ,  B32B3/00

CPC分类号： C30B25/18 ,  C30B29/40 ,  Y10T428/24479

摘要： It is to provide a substrate for growing a semiconductor, which is effective for suppressing an occurrence of surface defects different in type from hillock defects in case of epitaxially growing a compound semiconductor layer, particularly an Al-based compound semiconductor layer.In a substrate for growing a compound semiconductor, in which a crystal surface inclined at a predetermined off angle with respect to a (100) plane is a principal plane, an angle made by a direction of a vector obtained by projecting a normal vector of the principal plane on the (100) plane and one direction of a [0-11] direction, a [01-1] direction, a [011] direction and a [0-1-1] direction is set to be less than 35°, and the compound semiconductor layer is epitaxially grown on the substrate.

摘要翻译： 提供一种用于生长半导体的衬底，其在外延生长化合物半导体层，特别是Al基化合物半导体层的情况下，有效抑制类型与山丘缺陷不同的表面缺陷的发生。 在用于生长化合物半导体的衬底中，其中以相对于（100）面倾斜预定偏离角的晶体表面是主平面，由通过将（100）面的法向量投影获得的矢量的方向 （100）面上的主平面和[0-11]方向的一个方向，[01-1]方向，[011]方向和[0-1-1]方向设定为小于35 °，并且在衬底上外延生长化合物半导体层。

公开(公告)号：US20070229696A1

公开(公告)日：2007-10-04

申请号：US11591865

申请日：2006-11-02

申请人： Tsuyoshi Mochizuki ,  Ryuichi Hirano ,  Atsushi Yonetani

发明人： Tsuyoshi Mochizuki ,  Ryuichi Hirano ,  Atsushi Yonetani

IPC分类号： H04N5/225

CPC分类号： G02B21/361 ,  G02B21/362 ,  G03B17/00

摘要： An image pickup apparatus has an image sensor recording image information; a dustproof glass for keeping hermeticity of the periphery of the image sensor, placed in front of the image sensor; an optical filter removably placed in front of the dustproof glass; and a camera mount placed in front of the optical filter. The image pickup apparatus further has a parfocal adjusting device in which a focal position where the optical filter is demounted can be adjusted so as to be nearly equal to the focal position where the optical filter is mounted.

摘要翻译： 图像拾取装置具有图像传感器记录图像信息; 用于保持图像传感器的周边的气密性的防尘玻璃，放置在图像传感器的前面; 可拆卸地放置在防尘玻璃前面的滤光器; 以及放置在滤光器前面的相机安装座。 图像拾取装置还具有其中可以将滤光器被拆卸的焦点位置调整为几乎等于安装有滤光器的焦点位置的对焦调整装置。