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公开(公告)号：US20070261631A1
公开(公告)日：2007-11-15
申请号：US11661696
申请日：2005-06-06
申请人： Manabu Kawabe , Ryuichi Hirano
发明人： Manabu Kawabe , Ryuichi Hirano
IPC分类号： C30B28/00
CPC分类号： C30B25/20 , C30B25/16 , C30B29/40 , H01L21/02392 , H01L21/02433 , H01L21/02543 , H01L21/02576
摘要： It is to provide a method for growing an epitaxial crystal in which the doping conditions are set when an epitaxial crystal having a desired carrier concentration is grown. A method for growing an epitaxial crystal while a dopant is added to a compound semiconductor substrate, comprises: obtaining a relation between an off angle and a doping efficiency with regards to the same type of compound semiconductor substrate in advance; and setting a doping condition for carrying out an epitaxial growth on the compound semiconductor substrate based on the obtained relation and a value of the off angle of the substrate.
摘要翻译： 提供一种生长外延晶体的方法，其中当生长具有所需载流子浓度的外延晶体时，其中设置掺杂条件。 一种将掺杂剂添加到化合物半导体衬底中的生长外延晶体的方法包括：预先获得关于相同类型的化合物半导体衬底的偏角和掺杂效率之间的关系; 以及基于获得的关系和基板的偏离角的值，在化合物半导体基板上设定用于进行外延生长的掺杂条件。
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公开(公告)号：US07465353B2
公开(公告)日：2008-12-16
申请号：US11661696
申请日：2005-06-06
申请人： Manabu Kawabe , Ryuichi Hirano
发明人： Manabu Kawabe , Ryuichi Hirano
IPC分类号： C30B25/12
CPC分类号： C30B25/20 , C30B25/16 , C30B29/40 , H01L21/02392 , H01L21/02433 , H01L21/02543 , H01L21/02576
摘要： It is to provide a method for growing an epitaxial crystal in which the doping conditions are set when an epitaxial crystal having a desired carrier concentration is grown. A method for growing an epitaxial crystal while a dopant is added to a compound semiconductor substrate, comprises: obtaining a relation between an off angle and a doping efficiency with regards to the same type of compound semiconductor substrate in advance; and setting a doping condition for carrying out an epitaxial growth on the compound semiconductor substrate based on the obtained relation and a value of the off angle of the subtrate.
摘要翻译： 提供一种生长外延晶体的方法，其中当生长具有所需载流子浓度的外延晶体时，其中设置掺杂条件。 一种将掺杂剂添加到化合物半导体衬底中的生长外延晶体的方法包括：预先获得关于相同类型的化合物半导体衬底的偏角和掺杂效率之间的关系; 以及基于所获得的关系和所述减法偏离角的值，在所述化合物半导体衬底上设置用于进行外延生长的掺杂条件。
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公开(公告)号：US08815010B2
公开(公告)日：2014-08-26
申请号：US11587698
申请日：2005-02-15
申请人： Akira Noda , Ryuichi Hirano
发明人： Akira Noda , Ryuichi Hirano
摘要： A method for producing a low-dislocation InP single crystal suitably used for an optical device such as a semiconductor laser, and the low-dislocation InP single crystal wafer are provided. In a liquid-encapsulated Czochralski method in which a semiconductor raw material and an encapsulant are contained in a raw material melt containing part comprising a cylindrical crucible having a bottom, the raw material containing part is heated to melt the raw material, and a seed crystal is brought into contact with a surface of a melt of the raw material in a state of being covered with the encapsulant to grow a crystal while the seed crystal is raised; a crystal shoulder part is grown from the seed crystal by setting a temperature gradient in a crystal growth direction to 25° C./cm or less and setting a temperature-fall amount to 0.25° C./hr or more. Thus, an iron-doped or undoped InP single crystal wafer in which an area having a dislocation density of 500/cm2 or less occupies 70% or more is realized.
摘要翻译： 提供适合用于半导体激光器等光学元件的低位错InP单晶的制造方法和低位错InP单晶晶片。 在包含具有底部的圆柱形坩埚的原料熔融物的部件中含有半导体原料和密封剂的液体封装的切克劳斯法中，加热含有原料的部分，使原料熔融， 在被密封剂覆盖的状态下与原料的熔体的表面接触以在晶种升高的同时生长晶体; 通过将晶体生长方向的温度梯度设定为25℃/ cm以下，将温度下降量设定为0.25℃/小时以上，从晶种生长晶面部。 因此，实现了具有500 / cm 2以下的位错密度的面积占70％以上的铁掺杂或未掺杂的InP单晶晶片。
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公开(公告)号：US07883998B2
公开(公告)日：2011-02-08
申请号：US10589733
申请日：2005-02-15
申请人： Masashi Nakamura , Suguru Oota , Ryuichi Hirano
发明人： Masashi Nakamura , Suguru Oota , Ryuichi Hirano
IPC分类号： H01L21/36
CPC分类号： H01L21/02658 , C30B23/002 , C30B25/02 , C30B29/40 , H01L21/02392 , H01L21/02543 , H01L21/02546 , H01L21/02631
摘要： It is to provide a vapor phase growth method in which an epitaxial layer consisting of a compound semiconductor such as InAlAs, can be grown, with superior reproducibility, on a semiconductor substrate such as Fe-doped InP. In vapor phase growth method for growing an epitaxial layer on a semiconductor substrate, a resistivity of the semiconductor substrate at a room temperature is previously measured, a set temperature of the substrate is controlled depending on the resistivity at the room temperature such that a surface temperature of the substrate is a desired temperature regardless of the resistivity of the semiconductor substrate, and the epitaxial layer is grown.
摘要翻译： 提供一种气相生长方法，其中可以在诸如Fe掺杂InP的半导体衬底上以优异的再现性生长由诸如InAlAs的化合物半导体组成的外延层。 在用于在半导体衬底上生长外延层的气相生长方法中，预先测量半导体衬底在室温下的电阻率，根据室温下的电阻率来控制衬底的设定温度，使得表面温度 与半导体衬底的电阻率无关，是衬底的所需温度，并且生长外延层。
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5.发明授权公开(公告)号：US07816126B2
公开(公告)日：2010-10-19
申请号：US11312114
申请日：2005-12-20
申请人： Akitsugu Kagayama , Ryuichi Hirano , Atsuhiro Tsuchiya , Kenichi Koyama , Kazuhiro Hasegawa , Katsuyoshi Yamaguchi , Hideaki Endo
发明人： Akitsugu Kagayama , Ryuichi Hirano , Atsuhiro Tsuchiya , Kenichi Koyama , Kazuhiro Hasegawa , Katsuyoshi Yamaguchi , Hideaki Endo
摘要： A culture observation apparatus, which is used for observing a cultured cell while culturing the cell, includes a culture device that forms a culture space which is controlled to be an environment suitable for culturing the cultured cell; a sample tray that holds a container housing the cultured cell and a culture medium; a microscope that serves for observing the cultured cell; a tray holding mechanism that holds the sample tray in the culture space in a detachable manner with good reproducibility; and a shifting mechanism that relatively shifts the sample tray held by the tray holding mechanism and a light axis of the microscope along a plane that is orthogonal to the light axis, wherein the sample tray has a heater used for heating the sample tray, and is electrically connectable to an energy supplying unit that supplies energy to the sample tray.
摘要翻译： 用于在培养细胞时观察培养细胞的培养观察装置包括形成培养空间的培养装置，该培养装置被控制为适于培养培养细胞的环境; 容纳容纳培养细胞的容器和培养基的样品盘; 用于观察培养细胞的显微镜; 托盘保持机构，以可拆卸的方式将样品盘保持在培养空间中，具有良好的再现性; 以及移动机构，其使由所述托盘保持机构保持的所述检体托盘和所述显微镜的光轴沿着与所述光轴正交的平面相对移动，所述检体托盘具有用于加热所述检体托盘的加热器， 电连接到向样品托盘供应能量的能量供应单元。
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公开(公告)号：US07595188B2
公开(公告)日：2009-09-29
申请号：US11302591
申请日：2005-12-12
申请人： Kazuhiro Hasegawa , Akitsugu Kagayama , Hideaki Endo , Ryuichi Hirano , Atsuhiro Tsuchiya , Kenichi Koyama , Katsuyoshi Yamaguchi
发明人： Kazuhiro Hasegawa , Akitsugu Kagayama , Hideaki Endo , Ryuichi Hirano , Atsuhiro Tsuchiya , Kenichi Koyama , Katsuyoshi Yamaguchi
IPC分类号： C12M3/00
摘要： An observation apparatus includes a sample tray that holds a container housing a cultured cell and a culture medium and covered with a lid; an observation unit that serves for observation of the cultured cell; and a shifting unit that relatively shifts the sample tray and a light axis of the observation unit along a plane that is orthogonal to the light axis of the observation unit, wherein the sample tray includes a container holding unit that holds the container by utilizing an elastic force, and at least one of the lid and one portion of the lid is made detachable, with the container being held in the sample tray by the container holding unit.
摘要翻译： 观察装置包括：样本托盘，其容纳容纳培养细胞和培养基并容纳盖子的容器; 用于观察培养细胞的观察单元; 以及移动单元，其沿着与所述观察单元的光轴正交的平面相对地移动所述样本托盘和所述观察单元的光轴，其中，所述样本托盘包括容器保持单元，所述容器保持单元通过利用弹性 并且盖子和盖子的一部分中的至少一个是可拆卸的，容器通过容器保持单元保持在样品盘中。
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公开(公告)号：US06299680B1
公开(公告)日：2001-10-09
申请号：US09462268
申请日：2000-01-06
申请人： Akio Koyama , Ryuichi Hirano
发明人： Akio Koyama , Ryuichi Hirano
IPC分类号： C30B2948
摘要： An object of the present invention is to reduce the etch pit density (EPD) and the full-width-half-maximum (FWHM) value of the double crystal X-ray rocking curve, and to provide a CdTe crystal or a CdZnTe crystal which does not include deposits having Cd or Te and the process for producing the same. After a CdTe crystal or a CdZnTe crystal was grown, while the temperature of the crystal is from 700 to 1050° C., the Cd pressure is adjusted so as to keep the stoichiometry of the crystal at the above temperature. The crystal is left for time t which is determined so that each of a diameter L(r) of the crystal and a length L(z) thereof satisfies the following equation 1: {L(r),(L(z))}/2
摘要翻译： 本发明的目的是减少双晶X射线摇摆曲线的蚀刻坑密度（EPD）和全宽半最大值（FWHM）值，并提供CdTe晶体或CdZnTe晶体，其中 不包括具有Cd或Te的沉积物及其制备方法。 在CdTe晶体或CdZnTe晶体生长之后，当晶体的温度为700至1050℃时，调节Cd压力以将晶体的化学计量保持在上述温度。 对于晶体留下的晶体，其被确定为使得晶体的直径L（r）和长度L（z）分别满足以下等式1：然后，当晶体冷却时，晶体的温度 在晶体的温度和Cd储层的温度满足以下等式2的范围内降低：
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8.发明授权公开(公告)号：US08513775B2
公开(公告)日：2013-08-20
申请号：US13131614
申请日：2010-09-30
IPC分类号： H01L29/22 , H01L31/0328 , H01L31/0296 , H01L31/00 , H01L31/0336
CPC分类号： C30B29/48 , C30B25/186 , H01L21/02024 , H01L21/02411 , H01L21/02562 , H01L21/463
摘要： Provided is a CdTe-based semiconductor substrate for epitaxial growth, which is capable of growing good-quality epitaxial crystals without urging a substrate user to implement etching treatment before the epitaxial growth.A CdTe-based semiconductor substrate, in which tracks of linear polishing damage with a depth of 1 nm or more are not observed within a viewing range of 10 μm×10 μm when a surface of the substrate is observed by an atomic force microscope, and orange peel defects are not observed when the surface of the substrate is visually observed under a fluorescent lamp, can grow the good-quality epitaxial crystals.
摘要翻译： 提供了一种用于外延生长的CdTe基半导体衬底，其能够在不促使衬底用户在外延生长之前实施蚀刻处理的同时生长良好质量的外延晶体。 当通过原子力显微镜观察基板的表面时，在10mum×10um的观察范围内未观察到具有1nm以上的深度的线性抛光损伤的轨迹的CdTe系半导体基板， 在荧光灯下目视观察基板的表面时，不会观察到橙皮缺陷，可以生长优质的外延晶体。
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公开(公告)号：US08120649B2
公开(公告)日：2012-02-21
申请号：US11593216
申请日：2006-11-06
IPC分类号： H04N9/47
CPC分类号： G02B21/365
摘要： A microscope system having a selectively mountable optical element, comprises: a first noncontact type storage medium, being equipped in the optical element, for enabling a noncontact readout of information externally; and a first readout unit for reading information non-contactingly from the first noncontact type storage medium, wherein the first noncontact type storage medium stores information related to the optical element.
摘要翻译： 一种具有可选择安装的光学元件的显微镜系统，包括：第一非接触型存储介质，其被配备在所述光学元件中，用于使外部信息不接触地读出; 以及第一读取单元，用于从第一非接触式存储介质非接触地读取信息，其中第一非接触式存储介质存储与光学元件有关的信息。
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10.发明申请公开(公告)号：US20110233729A1
公开(公告)日：2011-09-29
申请号：US13131614
申请日：2010-09-30
申请人： Kenji Suzuki , Hideyuki Taniguchi , Hideki Kurta , Ryuichi Hirano
发明人： Kenji Suzuki , Hideyuki Taniguchi , Hideki Kurta , Ryuichi Hirano
CPC分类号： C30B29/48 , C30B25/186 , H01L21/02024 , H01L21/02411 , H01L21/02562 , H01L21/463
摘要： Provided is a CdTe-based semiconductor substrate for epitaxial growth, which is capable of growing good-quality epitaxial crystals without urging a substrate user to implement etching treatment before the epitaxial growth.A CdTe-based semiconductor substrate, in which tracks of linear polishing damage with a depth of 1 nm or more are not observed within a viewing range of 10 μm×10 μm when a surface of the substrate is observed by an atomic force microscope, and orange peel defects are not observed when the surface of the substrate is visually observed under a fluorescent lamp, can grow the good-quality epitaxial crystals.
摘要翻译： 提供了一种用于外延生长的CdTe基半导体衬底，其能够在不促使衬底用户在外延生长之前实施蚀刻处理的同时生长良好质量的外延晶体。 当通过原子力显微镜观察基板的表面时，在10μm×10μm的观察范围内未观察到具有1nm以上的深度的线性抛光损伤的轨迹的CdTe系半导体基板， 在荧光灯下目视观察基板的表面时，不会观察到橙皮缺陷，可以生长优质的外延晶体。
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