-
公开(公告)号:US10931251B2
公开(公告)日:2021-02-23
申请号:US16275655
申请日:2019-02-14
申请人: Akoustis, Inc.
发明人: Ramakrishna Vetury , Alexander Y. Feldman , Michael D. Hodge , Art Geiss , Shawn R. Gibb , Mark D. Boomgarden , Michael P. Lewis , Pinal Patel , Jeffrey B. Shealy
IPC分类号: H01H3/02 , H03H3/02 , H03H9/02 , H03H9/05 , H03H9/10 , H03H9/13 , H03H9/56 , H03H3/04 , H03H9/17
摘要: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.
-
公开(公告)号:US20190190479A1
公开(公告)日:2019-06-20
申请号:US16275655
申请日:2019-02-14
申请人: Akoustis, Inc.
发明人: Ramakrishna Vetury , Alexander Y. Feldman , Michael D. Hodge , Art Geiss , Shawn R. Gibb , Mark D. Boomgarden , Michael P. Lewis , Pinal Patel , Jeffrey B. Shealy
CPC分类号: H03H3/02 , H03H3/04 , H03H9/02118 , H03H9/0514 , H03H9/1035 , H03H9/131 , H03H9/132 , H03H9/133 , H03H9/171 , H03H9/174 , H03H9/564 , H03H9/568 , H03H2003/0414 , H03H2003/0428
摘要: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.
-
公开(公告)号:US10110189B2
公开(公告)日:2018-10-23
申请号:US15342061
申请日:2016-11-02
申请人: Akoustis, Inc.
发明人: Ramakrishna Vetury , Alexander Y. Feldman , Michael D. Hodge , Art Geiss , Shawn R. Gibb , Mark D. Boomgarden , Michael P. Lewis , Pinal Patel , Jeffrey B. Shealy
摘要: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.
-
-