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公开(公告)号：US20220182039A1
公开(公告)日：2022-06-09
申请号：US17110675
申请日：2020-12-03
申请人： Akoustis,Inc.
发明人： Saurabh Gupta , Zhiqiang Bi , Emad Mehdizadeh , Dae Ho Kim , Pinal Patel
摘要： A device includes a piezoelectric layer on a substrate and including a portion included in an acoustic resonator, a first conductive layer on the piezoelectric layer and including a first electrode of the acoustic resonator on a first side of resonator portion of the piezoelectric layer, and a second conductive layer on the piezoelectric layer and including a second electrode of the acoustic resonator on a second side of the resonator portion of the piezoelectric layer. An insulating layer is disposed on the second conductive layer and an interconnection metal layer is electrically connected to the second conductive layer or the first conductive layer and has a portion extending onto the insulating layer and overlapping a portion of the second conductive layer to provide a capacitor electrode of a capacitor coupled to the first electrode and/or the second electrode.
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公开(公告)号：US11870422B2
公开(公告)日：2024-01-09
申请号：US17110675
申请日：2020-12-03
申请人： Akoustis, Inc.
发明人： Saurabh Gupta , Zhiqiang Bi , Emad Mehdizadeh , Dae Ho Kim , Pinal Patel
摘要： A device includes a piezoelectric layer on a substrate and including a portion included in an acoustic resonator, a first conductive layer on the piezoelectric layer and including a first electrode of the acoustic resonator on a first side of resonator portion of the piezoelectric layer, and a second conductive layer on the piezoelectric layer and including a second electrode of the acoustic resonator on a second side of the resonator portion of the piezoelectric layer. An insulating layer is disposed on the second conductive layer and an interconnection metal layer is electrically connected to the second conductive layer or the first conductive layer and has a portion extending onto the insulating layer and overlapping a portion of the second conductive layer to provide a capacitor electrode of a capacitor coupled to the first electrode and/or the second electrode.
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公开(公告)号：US20230112046A1
公开(公告)日：2023-04-13
申请号：US18064762
申请日：2022-12-12
申请人： Akoustis, Inc.
发明人： Zhiqiang BI , Dae Ho Kim , Pinal Patel , Kathy W. Davis , Rohan W. Houlden
摘要： A resonator circuit device. The present invention provides for improved resonator shapes using egg-shaped, partial egg-shaped, and asymmetrical partial egg-shaped resonator structures. These resonator shapes are configured to give less spurious mode/noise below the resonant frequency (Fs) than rectangular, circular, and elliptical resonator shapes. These improved resonator shapes also provide filter layout flexibility, which allows for more compact resonator devices compared to resonator devices using conventionally shaped resonators.
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公开(公告)号：US11558023B2
公开(公告)日：2023-01-17
申请号：US17102060
申请日：2020-11-23
申请人： Akoustis, Inc.
发明人： Ramakrishna Vetury , Alexander Y. Feldman , Michael D. Hodge , Art Geiss , Mark D. Boomgarden , Michael P. Lewis , Pinal Patel , Dae Ho Kim , Mary Winters , Jeffrey B. Shealy
IPC分类号： H04R17/00 , H03H3/02 , H03H9/02 , H03H9/05 , H03H9/10 , H03H9/13 , H03H9/56 , H03H9/17 , H03H3/04
摘要： A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.
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公开(公告)号：US12028046B2
公开(公告)日：2024-07-02
申请号：US17323332
申请日：2021-05-18
申请人： Akoustis, Inc.
发明人： Saurabh Gupta , Zhiqiang Bi , Dae Ho Kim , Pinal Patel , Katherine W. Davis , Emad Mehdizadeh
摘要： A BAW resonator ladder topology pass-band filter can include a plurality of series branches each including BAW series resonators. A plurality of shunt branches can each include BAW shunt resonators, wherein the plurality of series branches are coupled to the plurality of shunt branches to provide the BAW resonator ladder topology pass-band filter. A high-impedance shunt branch can include a plurality of high-impedance BAW shunt resonators coupled together in-series to provide an impedance for the high-impedance shunt branch that is greater the other shunt branches in the BAW resonator ladder topology pass-band filter.
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公开(公告)号：US20210273630A1
公开(公告)日：2021-09-02
申请号：US17323332
申请日：2021-05-18
申请人： Akoustis, Inc.
发明人： Saurabh Gupta , Zhiqiang BI , Dee Ho KIM , Pinal Patel , Katherine W. Davis , Emad Mehdizadeh
摘要： A BAW resonator ladder topology pass-band filter can include a plurality of series branches each including BAW series resonators. A plurality of shunt branches can each include BAW shunt resonators, wherein the plurality of series branches are coupled to the plurality of shunt branches to provide the BAW resonator ladder topology pass-band filter. A high-impedance shunt branch can include a plurality of high-impedance BAW shunt resonators coupled together in-series to provide an impedance for the high-impedance shunt branch that is greater the other shunt branches in the BAW resonator ladder topology pass-band filter.
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公开(公告)号：US10992279B2
公开(公告)日：2021-04-27
申请号：US16136145
申请日：2018-09-19
申请人： Akoustis, Inc.
发明人： Ramakrishna Vetury , Alexander Y. Feldman , Michael D. Hodge , Art Geiss , Shawn R. Gibb , Mark D. Boomgarden , Michael P. Lewis , Pinal Patel , Jeffrey B. Shealy
摘要： A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.
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公开(公告)号：US10979011B2
公开(公告)日：2021-04-13
申请号：US16134941
申请日：2018-09-18
申请人： Akoustis, Inc.
发明人： Ramakrishna Vetury , Alexander Y. Feldman , Michael D. Hodge , Art Geiss , Shawn R. Gibb , Mark D. Boomgarden , Michael P. Lewis , Pinal Patel , Jeffrey B. Shealy
摘要： A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.
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公开(公告)号：US10855247B2
公开(公告)日：2020-12-01
申请号：US16054929
申请日：2018-08-03
申请人： Akoustis, Inc.
摘要： An elliptical-shaped resonator device. The device includes a bottom metal plate, a piezoelectric layer overlying the bottom metal plate, and a top metal plate overlying the piezoelectric layer. The top metal plate, the piezoelectric layer, and the bottom metal plate are characterized by an elliptical shape having a horizontal diameter (dx) and a vertical diameter (dy), which can be represented as ellipse ratio R=dx/dy. Using the elliptical structure, the resulting bulk acoustic wave resonator (BAWR) can exhibit equivalent or improved insertion loss, higher coupling coefficient, and higher quality factor compared to conventional polygon-shaped resonators.
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公开(公告)号：US10110188B2
公开(公告)日：2018-10-23
申请号：US15342049
申请日：2016-11-02
申请人： Akoustis, Inc.
发明人： Ramakrishna Vetury , Alexander Y. Feldman , Michael D. Hodge , Art Geiss , Shawn R. Gibb , Mark D. Boomgarden , Michael P. Lewis , Pinal Patel , Jeffrey B. Shealy
摘要： A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.
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