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公开(公告)号：US20210167755A1
公开(公告)日：2021-06-03
申请号：US17119052
申请日：2020-12-11
申请人： Akoustis, Inc.
发明人： Ya Shen , Michael D. Hodge
摘要： A BAW resonator filter can include a BAW resonator pass-band filter ladder, the BAW resonator pass-band filter ladder can be configured to pass frequency components of an input signal in a pass-band of frequencies received at an input node of the BAW resonator pass-band filter ladder to an output node of the BAW resonator pass-band filter ladder. A first rejection-band series resonator can be coupled in series between an input port of the BAW resonator pass-band filter ladder and the input node, the first rejection-band series resonator can have a first anti-resonant frequency peak in a rejection-band of frequencies that is less than the pass-band of frequencies. A second rejection-band series resonator can be coupled in series between an output port of the BAW resonator filter and the output node, the second rejection-band series resonator can have a second anti-resonant frequency peak in the rejection-band of frequencies.
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公开(公告)号：US11558023B2
公开(公告)日：2023-01-17
申请号：US17102060
申请日：2020-11-23
申请人： Akoustis, Inc.
发明人： Ramakrishna Vetury , Alexander Y. Feldman , Michael D. Hodge , Art Geiss , Mark D. Boomgarden , Michael P. Lewis , Pinal Patel , Dae Ho Kim , Mary Winters , Jeffrey B. Shealy
IPC分类号： H04R17/00 , H03H3/02 , H03H9/02 , H03H9/05 , H03H9/10 , H03H9/13 , H03H9/56 , H03H9/17 , H03H3/04
摘要： A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.
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公开(公告)号：US11456723B2
公开(公告)日：2022-09-27
申请号：US17558147
申请日：2021-12-21
申请人： Akoustis, Inc.
发明人： Jeffrey B. Shealy , Michael D. Hodge , Rohan W. Houlden , Mary Winters , Ramakrishna Vetury , Ya Shen , David M. Aichele
摘要： An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include a plurality of resonator devices and a plurality of resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.
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公开(公告)号：US11838005B2
公开(公告)日：2023-12-05
申请号：US18157161
申请日：2023-01-20
申请人： AKOUSTIS, INC.
发明人： Ya Shen , Michael D. Hodge
CPC分类号： H03H9/54 , H03H7/0161 , H03H9/02007 , H03H9/205
摘要： A BAW resonator filter can include a BAW resonator pass-band filter ladder, the BAW resonator pass-band filter ladder can be configured to pass frequency components of an input signal in a pass-band of frequencies received at an input node of the BAW resonator pass-band filter ladder to an output node of the BAW resonator pass-band filter ladder. A first rejection-band series resonator can be coupled in series between an input port of the BAW resonator pass-band filter ladder and the input node, the first rejection-band series resonator can have a first anti-resonant frequency peak in a rejection-band of frequencies that is less than the pass-band of frequencies. A second rejection-band series resonator can be coupled in series between an output port of the BAW resonator filter and the output node, the second rejection-band series resonator can have a second anti-resonant frequency peak in the rejection-band of frequencies.
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公开(公告)号：US10992279B2
公开(公告)日：2021-04-27
申请号：US16136145
申请日：2018-09-19
申请人： Akoustis, Inc.
发明人： Ramakrishna Vetury , Alexander Y. Feldman , Michael D. Hodge , Art Geiss , Shawn R. Gibb , Mark D. Boomgarden , Michael P. Lewis , Pinal Patel , Jeffrey B. Shealy
摘要： A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.
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公开(公告)号：US10979011B2
公开(公告)日：2021-04-13
申请号：US16134941
申请日：2018-09-18
申请人： Akoustis, Inc.
发明人： Ramakrishna Vetury , Alexander Y. Feldman , Michael D. Hodge , Art Geiss , Shawn R. Gibb , Mark D. Boomgarden , Michael P. Lewis , Pinal Patel , Jeffrey B. Shealy
摘要： A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.
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公开(公告)号：US10110188B2
公开(公告)日：2018-10-23
申请号：US15342049
申请日：2016-11-02
申请人： Akoustis, Inc.
发明人： Ramakrishna Vetury , Alexander Y. Feldman , Michael D. Hodge , Art Geiss , Shawn R. Gibb , Mark D. Boomgarden , Michael P. Lewis , Pinal Patel , Jeffrey B. Shealy
摘要： A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.
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公开(公告)号：US20230344399A1
公开(公告)日：2023-10-26
申请号：US18342623
申请日：2023-06-27
申请人： Akoustis, Inc.
发明人： Ramakrishna VETURY , Alexander Y. Feldman , Michael D. Hodge , Art Geiss , Shawn R. Gibb , Mark D. Boomgarden , Michael P. Lewis , Pinal Patel , Jeffrey B. Shealy
CPC分类号： H03H3/02 , H03H9/02118 , H03H9/0514 , H03H9/1035 , H03H9/132 , H03H9/568 , H03H3/04 , H03H9/131 , H03H9/133 , H03H9/171 , H03H9/564 , H03H9/174 , H03H2003/0428 , H03H2003/0414
摘要： A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.
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公开(公告)号：US11581872B2
公开(公告)日：2023-02-14
申请号：US17661367
申请日：2022-04-29
申请人： Akoustis, Inc.
发明人： Ya Shen , Michael D. Hodge
摘要： A BAW resonator filter can include a BAW resonator pass-band filter ladder, the BAW resonator pass-band filter ladder can be configured to pass frequency components of an input signal in a pass-band of frequencies received at an input node of the BAW resonator pass-band filter ladder to an output node of the BAW resonator pass-band filter ladder. A first rejection-band series resonator can be coupled in series between an input port of the BAW resonator pass-band filter ladder and the input node, the first rejection-band series resonator can have a first anti-resonant frequency peak in a rejection-band of frequencies that is less than the pass-band of frequencies. A second rejection-band series resonator can be coupled in series between an output port of the BAW resonator filter and the output node, the second rejection-band series resonator can have a second anti-resonant frequency peak in the rejection-band of frequencies.
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公开(公告)号：US11563412B2
公开(公告)日：2023-01-24
申请号：US17171756
申请日：2021-02-09
申请人： Akoustis, Inc.
发明人： Ramakrishna Vetury , Alexander Y. Feldman , Michael D. Hodge , Art Geiss , Shawn R. Gibb , Mark D. Boomgarden , Michael P. Lewis , Pinal Patel , Jeffrey B. Shealy
摘要： A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.
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