公开(公告)号：US11621698B2

公开(公告)日：2023-04-04

申请号：US17860866

申请日：2022-07-08

Applicant: Akoustis, Inc.

Inventor： Ya Shen ,  Rohan W. Houlden ,  David M. Aichele ,  Jeffrey B. Shealy

IPC: H03H9/60 ,  H03H9/56 ,  H03H9/17 ,  H03H9/00 ,  H03H9/05 ,  H03H9/10 ,  H03H9/54 ,  H03H3/02

Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

公开(公告)号：US11611386B2

公开(公告)日：2023-03-21

申请号：US17841485

申请日：2022-06-15

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. Shealy ,  Rohan W. Houlden ,  David M. Aichele

IPC: H04B1/02 ,  H04B7/08 ,  H04B1/00 ,  H03H3/02 ,  H03F1/26 ,  H03F3/195 ,  H03F3/72 ,  H03H9/17 ,  H03H9/02

Abstract: A front-end module (FEM) for a 6.1 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 6.1 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 6.1 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 6.1 GHz PA, a 6.1 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device.

公开(公告)号：US11581866B2

公开(公告)日：2023-02-14

申请号：US16990638

申请日：2020-08-11

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. Shealy ,  Mary Winters ,  Craig Moe

IPC: H03H3/02 ,  H03H9/13 ,  H03H9/17 ,  H03H9/10 ,  H03H9/05 ,  H03H9/02 ,  H01L41/337 ,  H01L41/317 ,  H01L41/29 ,  H01L41/23 ,  H01L41/18 ,  H01L41/08 ,  H01L41/053 ,  H01L41/047 ,  H03H9/54 ,  H01L41/312

Abstract: An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device. An RF piezoelectric resonator device can be on the substrate including the ScAlN layer sandwiched between a top electrode and a bottom electrode of the RF piezoelectric resonator device to provide a piezoelectric resonator for the RF piezoelectric resonator device.

公开(公告)号：US11495734B2

公开(公告)日：2022-11-08

申请号：US16692717

申请日：2019-11-22

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. Shealy

IPC: H03H3/02 ,  H01L41/316 ,  H01L41/39 ,  H03H9/17 ,  H03H9/05 ,  H03H9/13 ,  H03H9/02 ,  H01L41/18 ,  H01L21/28 ,  H03H9/64 ,  C30B29/30

Abstract: A method of manufacturing an integrated circuit. This method includes forming an epitaxial material comprising single crystal piezo material overlying a surface region of a substrate to a desired thickness and forming a trench region to form an exposed portion of the surface region through a pattern provided in the epitaxial material. Also, the method includes forming a topside landing pad metal and a first electrode member overlying a portion of the epitaxial material and a second electrode member overlying the topside landing pad metal. Furthermore, the method can include processing the backside of the substrate to form a backside trench region exposing a backside of the epitaxial material and the landing pad metal and forming a backside resonator metal material overlying the backside of the epitaxial material to couple to the second electrode member overlying the topside landing pad metal.

公开(公告)号：US11245382B2

公开(公告)日：2022-02-08

申请号：US16709813

申请日：2019-12-10

Applicant: Akoustis, Inc.

Inventor： Shawn R. Gibb ,  Craig Moe ,  Jeff Leathersich ,  Steven Denbaars ,  Jeffrey B. Shealy

IPC: H03H9/56 ,  H01L41/253 ,  H01L41/316 ,  H03H3/02 ,  H03H9/02 ,  H03H9/05 ,  H03H9/10 ,  H03H9/17 ,  H03H9/13

Abstract: A method of manufacture and structure for an acoustic resonator device having a hybrid piezoelectric stack with a strained single crystal layer and a thermally-treated polycrystalline layer. The method can include forming a strained single crystal piezoelectric layer overlying the nucleation layer and having a strain condition and piezoelectric layer parameters, wherein the strain condition is modulated by nucleation growth parameters and piezoelectric layer parameters to improve one or more piezoelectric properties of the strained single crystal piezoelectric layer. Further, the method can include forming a polycrystalline piezoelectric layer overlying the strained single crystal piezoelectric layer, and performing a thermal treatment on the polycrystalline piezoelectric layer to form a recrystallized polycrystalline piezoelectric layer. The resulting device with this hybrid piezoelectric stack exhibits improved electromechanical coupling and wide bandwidth performance.

公开(公告)号：US11184079B2

公开(公告)日：2021-11-23

申请号：US16902953

申请日：2020-06-16

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. Shealy ,  Rohan W. Houlden ,  David M. Aichele

IPC: H04B1/02 ,  H04B7/08 ,  H04B1/00 ,  H03H3/02 ,  H03F1/26 ,  H03F3/195 ,  H03F3/72 ,  H03H9/17 ,  H03H9/02

Abstract: A front end module (FEM) for a 5.5 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 5.5 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 5.5 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 5.5 GHz PA, a 5.5 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device.

公开(公告)号：US10979022B2

公开(公告)日：2021-04-13

申请号：US16019267

申请日：2018-06-26

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. Shealy ,  Michael Hodge ,  Rohan W. Houlden ,  Shawn R. Gibb ,  Mary Winters ,  Ramakrishna Vetury ,  David Aichele

IPC: H03H9/60 ,  H03H9/02 ,  H03H9/05 ,  H03H9/10 ,  H03H9/205 ,  H03H9/54 ,  H03H9/56 ,  H01L41/187 ,  H01L41/047 ,  H01L27/20 ,  H01L41/29 ,  H03H9/00 ,  H03H9/58 ,  H03H3/02 ,  H01L41/332

Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

公开(公告)号：US10516377B2

公开(公告)日：2019-12-24

申请号：US15362537

申请日：2016-11-28

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. Shealy

IPC: H03H3/02 ,  H01L41/18 ,  H03H9/17 ,  H01L41/39 ,  H03H9/05 ,  H03H9/13 ,  H03H9/02 ,  H01L21/28 ,  H03H9/64

Abstract: A method of manufacturing an integrated circuit. This method includes forming an epitaxial material comprising single crystal piezo material overlying a surface region of a substrate to a desired thickness and forming a trench region to form an exposed portion of the surface region through a pattern provided in the epitaxial material. Also, the method includes forming a topside landing pad metal and a first electrode member overlying a portion of the epitaxial material and a second electrode member overlying the topside landing pad metal. Furthermore, the method can include processing the backside of the substrate to form a backside trench region exposing a backside of the epitaxial material and the landing pad metal and forming a backside resonator metal material overlying the backside of the epitaxial material to couple to the second electrode member overlying the topside landing pad metal.

公开(公告)号：US10431580B1

公开(公告)日：2019-10-01

申请号：US15405167

申请日：2017-01-12

Applicant: Akoustis, Inc.

Inventor： Shawn R. Gibb ,  David Aichele ,  Ramakrishna Vetury ,  Mark D. Boomgarden ,  Jeffrey B. Shealy

IPC: H01L27/06 ,  H01L21/02 ,  H01L29/20 ,  H03H3/08 ,  H03H9/46 ,  H03F3/19 ,  H04B1/44 ,  H03F3/21 ,  H01L29/417 ,  H01L29/80 ,  H01L21/8252 ,  H01L27/20 ,  H03H9/02 ,  H01L41/18 ,  H01L41/37 ,  H01L41/314

Abstract: A method of manufacture and structure for a monolithic single chip single crystal device. The method can include forming a first single crystal epitaxial layer overlying the substrate and forming one or more second single crystal epitaxial layers overlying the first single crystal epitaxial layer. The first single crystal epitaxial layer and the one or more second single crystal epitaxial layers can be processed to form one or more active or passive device components. Through this process, the resulting device includes a monolithic epitaxial stack integrating multiple circuit functions.

公开(公告)号：US10211804B2

公开(公告)日：2019-02-19

申请号：US15147613

申请日：2016-05-05

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. Shealy

IPC: H03H9/02 ,  H01L41/29 ,  H03H9/54 ,  H03H9/205 ,  H03H3/02 ,  H03H9/00 ,  H03H9/05 ,  H03H9/17 ,  H03H9/56 ,  H03H9/60 ,  H01L41/18 ,  H03H9/64

Abstract: A method of fabricating a configurable single crystal acoustic resonator (SCAR) device integrated circuit. The method includes providing a bulk substrate structure having first and second recessed regions with a support member disposed in between. A thickness of single crystal piezo material is formed overlying the bulk substrate with an exposed backside region configured with the first recessed region and a contact region configured with the second recessed region. A first electrode with a first terminal is formed overlying an upper portion of the piezo material, while a second electrode with a second terminal is formed overlying a lower portion of the piezo material. An acoustic reflector structure and a dielectric layer are formed overlying the resulting bulk structure. The resulting device includes a plurality of single crystal acoustic resonator devices, numbered from (R1) to (RN), where N is an integer greater than 1.