公开(公告)号：US20220416756A1

公开(公告)日：2022-12-29

申请号：US17527866

申请日：2021-11-16

Applicant: Akoustis,Inc.

Inventor： Craig Moe ,  Jeffrey M. Leathersich ,  Jeffrey B. Shealy

IPC: H03H9/02 ,  H03H3/02 ,  H03H9/05 ,  H03H9/17

Abstract: A method of forming a resonator structure can be provided by forming one or more template layers on a substrate, (a) epitaxially forming an AlScN layer on the template layer to a first thickness, (b) epitaxially forming an AlGaN interlayer on the AlScN layer to a second thickness that is substantially less than the first thickness, and repeating operations (a) and (b) until a total thickness of all AlScN layers and AlGaN interlayers provides a target thickness for a single crystal AlScN/AlGaN superlattice resonator structure on the template layer.

公开(公告)号：US20200013948A1

公开(公告)日：2020-01-09

申请号：US16513143

申请日：2019-07-16

Applicant: Akoustis, Inc.

Inventor： Craig Moe ,  Jeffrey B. Shealy ,  Mary Winters

IPC: H01L41/316 ,  H03H3/02 ,  H01L41/187 ,  H01L41/053 ,  H01J37/34 ,  C23C14/02 ,  C23C14/34 ,  C23C14/06

Abstract: A method of forming a piezoelectric thin film can be provided by heating a substrate in a process chamber to a temperature between about 350 degrees Centigrade and about 850 degrees Centigrade to provide a sputtering temperature of the substrate and sputtering a Group III element from a target in the process chamber onto the substrate at the sputtering temperature to provide the piezoelectric thin film including a nitride of the Group III element on the substrate to have a crystallinity of less than about 1.0 degree at Full Width Half Maximum (FWHM) to about 10 arcseconds at FWHM measured using X-ray diffraction (XRD).

公开(公告)号：US20250055434A1

公开(公告)日：2025-02-13

申请号：US18294809

申请日：2022-09-12

Applicant: Akoustis, Inc.

Inventor： Craig Moe ,  Jeffrey M. Leathersich ,  Ramakrishna Vetury ,  Abhay Saranswarup Kochhar

IPC: H03H3/02 ,  H03H9/02 ,  H03H9/17

Abstract: As disclosed herein, methods of forming piezoelectric layers having alternating polarizations and related bulk acoustic wave filter devices. Pursuant to these embodiments, a method of forming a piezoelectric resonator device can include forming a first material, including metal and nitrogen atoms, using a first process to provide a first piezoelectric layer having the metal and the nitrogen atoms arranged in a first polar orientation, to establish a first polarization for the first piezoelectric layer and forming a second material, including the metal and the nitrogen atoms on the first piezoelectric layer, using a second process to provide a second piezoelectric layer having the metal and the nitrogen atoms arranged in a second polar orientation, to establish a second polarization for the second piezoelectric layer that is opposite of the first polarization.

公开(公告)号：US20240164216A1

公开(公告)日：2024-05-16

申请号：US18417530

申请日：2024-01-19

Applicant: Akoustis, Inc.

Inventor： Craig Moe ,  Jeffrey B. Shealy ,  Mary Winters ,  Dae Ho Kim ,  Abhay Saranswarup Kochhar

IPC: H10N30/076 ,  H03H3/02 ,  H10N30/053 ,  H10N30/06 ,  H10N30/85

CPC classification number: H10N30/076 ,  H03H3/02 ,  H10N30/053 ,  H10N30/06 ,  H10N30/85 ,  Y10T29/42 ,  Y10T29/49005

Abstract: A method of forming a piezoelectric thin film includes sputtering a first surface of a substrate to provide a piezoelectric thin film comprising AlN, AlScN, AlCrN, HfMgAlN, or ZrMgAlN thereon, processing a second surface of the substrate that is opposite the first surface of the substrate to provide an exposed surface of the piezoelectric thin film from beneath the second surface of the substrate, wherein the exposed surface of the piezoelectric thin film includes a first crystalline quality portion, removing a portion of the exposed surface of the piezoelectric thin film to access a second crystalline quality portion that is covered by the first crystalline quality portion, wherein the second crystalline quality portion has a higher quality than the first crystalline quality portion and processing the second crystalline quality portion to provide an acoustic resonator device on the second crystalline quality portion.

公开(公告)号：US20230235459A1

公开(公告)日：2023-07-27

申请号：US17582613

申请日：2022-01-24

Applicant: Akoustis, Inc.

Inventor： Craig Moe ,  Jeffrey M. Leathersich

IPC: C23C16/455 ,  C23C16/52 ,  C23C16/18 ,  C30B25/16 ,  C30B25/14 ,  H01L41/35

CPC classification number: C23C16/4557 ,  C23C16/52 ,  C23C16/18 ,  C30B25/16 ,  C30B25/14 ,  H01L41/35

Abstract: An apparatus includes a chemical vapor deposition (CVD) reactor, an injector column that provides a metal organic precursor vapor into the CVD reactor, a heater in thermal communication with the injector column, and a control circuit configured to control the heater and thereby maintain the metal organic precursor vapor in the injector column above a saturation temperature. The control circuit may be configured to control the heater to maintain a temperature of the metal organic precursor vapor in the injector column in a temperature range from about 85 degrees Centigrade to about 200 degrees Centigrade. A temperature of the metal organic precursor vapor entering the injector column may be in a range from about 160 degrees Centigrade to about 200 degrees Centigrade and a pressure of the metal organic precursor vapor entering the injector column may be in a range from about 50 mbar to about 1000 mbar.

公开(公告)号：US20220352456A1

公开(公告)日：2022-11-03

申请号：US17811222

申请日：2022-07-07

Applicant: Akoustis, Inc.

Inventor： Craig Moe ,  Jeffrey B. Shealy ,  Mary Winters ,  Dae Ho Kim ,  Abhay Saranswarup Kochhar

IPC: H01L41/316 ,  H01L41/18 ,  H01L41/29 ,  H01L41/273 ,  H03H3/02

Abstract: A method of forming a piezoelectric thin film includes sputtering a first surface of a substrate to provide a piezoelectric thin film comprising AlN, AlScN, AlCrN, HfMgAlN, or ZrMgAlN thereon, processing a second surface of the substrate that is opposite the first surface of the substrate to provide an exposed surface of the piezoelectric thin film from beneath the second surface of the substrate, wherein the exposed surface of the piezoelectric thin film includes a first crystalline quality portion, removing a portion of the exposed surface of the piezoelectric thin film to access a second crystalline quality portion that is covered by the first crystalline quality portion, wherein the second crystalline quality portion has a higher quality than the first crystalline quality portion and processing the second crystalline quality portion to provide an acoustic resonator device on the second crystalline quality portion.

公开(公告)号：US11411169B2

公开(公告)日：2022-08-09

申请号：US16742202

申请日：2020-01-14

Applicant: Akoustis, Inc.

Inventor： Craig Moe ,  Jeffrey B. Shealy ,  Mary Winters ,  Dae Ho Kim ,  Abhay Saranswarup Kochhar

IPC: H01L41/316 ,  H01L41/18 ,  H01L41/29 ,  H01L41/273 ,  H03H3/02

Abstract: A method of forming a piezoelectric thin film includes sputtering a first surface of a substrate to provide a piezoelectric thin film comprising AlN, AlScN, AlCrN, HfMgAlN, or ZrMgAlN thereon, processing a second surface of the substrate that is opposite the first surface of the substrate to provide an exposed surface of the piezoelectric thin film from beneath the second surface of the substrate, wherein the exposed surface of the piezoelectric thin film includes a first crystalline quality portion, removing a portion of the exposed surface of the piezoelectric thin film to access a second crystalline quality portion that is covered by the first crystalline quality portion, wherein the second crystalline quality portion has a higher quality than the first crystalline quality portion and processing the second crystalline quality portion to provide an acoustic resonator device on the second crystalline quality portion.

公开(公告)号：US20240088860A1

公开(公告)日：2024-03-14

申请号：US18510119

申请日：2023-11-15

Applicant: Akoustis, Inc.

Inventor： Craig Moe ,  Jeffrey M. Leathersich

IPC: H03H3/02 ,  H03H9/02 ,  H03H9/05 ,  H03H9/10 ,  H03H9/13 ,  H03H9/17 ,  H03H9/54 ,  H10N30/00 ,  H10N30/02 ,  H10N30/06 ,  H10N30/077 ,  H10N30/086 ,  H10N30/85 ,  H10N30/87 ,  H10N30/88

CPC classification number: H03H3/02 ,  H03H9/02015 ,  H03H9/02118 ,  H03H9/0523 ,  H03H9/105 ,  H03H9/13 ,  H03H9/173 ,  H03H9/175 ,  H03H9/177 ,  H03H9/547 ,  H10N30/02 ,  H10N30/06 ,  H10N30/077 ,  H10N30/086 ,  H10N30/10513 ,  H10N30/85 ,  H10N30/875 ,  H10N30/877 ,  H10N30/88 ,  H03H2003/021 ,  H03H2003/025 ,  H10N30/072 ,  Y10T29/42

Abstract: A method of forming a piezoelectric thin film can include depositing a material on a first surface of a Si substrate to provide a stress neutral template layer. A piezoelectric thin film including a Group III element and nitrogen can be sputtered onto the stress neutral template layer and a second surface of the Si substrate that is opposite the first surface can be processed to remove that Si substrate and the stress neutral template layer to provide a remaining portion of the piezoelectric thin film. A piezoelectric resonator can be formed on the remaining portion of the piezoelectric thin film.

公开(公告)号：US20230246618A1

公开(公告)日：2023-08-03

申请号：US18002339

申请日：2021-08-02

Applicant: Akoustis, Inc.

Inventor： Craig Moe ,  Jeffrey M. Leathersich

IPC: H03H3/02 ,  C30B29/38 ,  C30B25/10 ,  C30B25/18 ,  C30B25/16 ,  H03H9/02

CPC classification number: H03H3/02 ,  C30B29/38 ,  C30B25/10 ,  C30B25/18 ,  C30B25/16 ,  H03H9/02015 ,  H03H2003/023

Abstract: MOCVD systems can be used to form single crystal piezoelectric ScxAl1−xN layers having a concentration of Sc in a range between about 4% and about 18% at temperatures in a range, for example, between about 800 degrees Centigrade and about 950 degrees Centigrade. The single crystal piezoelectric ScxAl1−xN layers can have a crystalline structure characterized by an XRD ω-rocking curve FWHM value in a range between about less than 1.0 degrees to about 0.001 degrees as measured about the omega angle as of the ScxAl1−xN (0002) film reflection.

公开(公告)号：US11581866B2

公开(公告)日：2023-02-14

申请号：US16990638

申请日：2020-08-11

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. Shealy ,  Mary Winters ,  Craig Moe

IPC: H03H3/02 ,  H03H9/13 ,  H03H9/17 ,  H03H9/10 ,  H03H9/05 ,  H03H9/02 ,  H01L41/337 ,  H01L41/317 ,  H01L41/29 ,  H01L41/23 ,  H01L41/18 ,  H01L41/08 ,  H01L41/053 ,  H01L41/047 ,  H03H9/54 ,  H01L41/312

Abstract: An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device. An RF piezoelectric resonator device can be on the substrate including the ScAlN layer sandwiched between a top electrode and a bottom electrode of the RF piezoelectric resonator device to provide a piezoelectric resonator for the RF piezoelectric resonator device.