公开(公告)号：US08338857B2

公开(公告)日：2012-12-25

申请号：US12870811

申请日：2010-08-28

申请人： Michael T. Morse ,  Olufemi I. Dosunmu ,  Ansheng Liu ,  Mario J. Paniccia

发明人： Michael T. Morse ,  Olufemi I. Dosunmu ,  Ansheng Liu ,  Mario J. Paniccia

IPC分类号： H01L31/028 ,  H01L31/0352

CPC分类号： H01L31/1075 ,  H01L27/14629 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/1812 ,  Y02E10/547

摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.

摘要翻译： 公开了一种基于半导体波导的光接收器。 根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。 第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。 倍增区域被定义为接近并与吸收区域分离。 乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。

公开(公告)号：US20100320502A1

公开(公告)日：2010-12-23

申请号：US12870811

申请日：2010-08-28

申请人： Michael T. Morse ,  Olufemi I. Dosunmu ,  Ansheng Liu ,  Mario J. Paniccia

发明人： Michael T. Morse ,  Olufemi I. Dosunmu ,  Ansheng Liu ,  Mario J. Paniccia

IPC分类号： H01L31/107

CPC分类号： H01L31/1075 ,  H01L27/14629 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/1812 ,  Y02E10/547

摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.

摘要翻译： 公开了一种基于半导体波导的光接收器。 根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。 第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。 倍增区域被定义为接近并与吸收区域分离。 乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。

公开(公告)号：US07508576B2

公开(公告)日：2009-03-24

申请号：US11040238

申请日：2005-01-20

申请人： Ansheng Liu ,  Mario J. Paniccia

发明人： Ansheng Liu ,  Mario J. Paniccia

IPC分类号： H01S3/00

CPC分类号： H01S3/30 ,  H01S3/063 ,  H01S3/0637 ,  H01S5/32

摘要： An optical bistable silicon Raman laser is disclosed, which provides digital signal regeneration, reshaping and wavelength conversion. An apparatus according to aspects of the present invention includes an optical waveguide disposed in semiconductor material. First and second reflectors are disposed in the optical waveguide. The first and second reflectors define a cavity in the optical waveguide. The cavity is to receive a first optical beam having a first wavelength. A power level of the first optical beam received by the cavity rising above a second power level results in emission of a second optical beam of a second wavelength from the cavity until the power level of the first optical beam received by the cavity falls below a first power level. The first power level is less than the second power level.

摘要翻译： 公开了一种光学双稳态硅拉曼激光器，其提供数字信号再生，整形和波长转换。 根据本发明的方面的装置包括设置在半导体材料中的光波导。 第一和第二反射器设置在光波导中。 第一和第二反射器限定光波导中的空腔。 腔体将接收具有第一波长的第一光束。 由空腔接收的第一光束的功率电平升高到高于第二功率电平，导致从空腔发射第二波长的第二光束，直到由空腔接收的第一光束的功率电平落在第一 能量等级。 第一功率电平小于第二功率电平。

公开(公告)号：US07233051B2

公开(公告)日：2007-06-19

申请号：US11170556

申请日：2005-06-28

申请人： Michael T. Morse ,  Olufemi I. Dosunmu ,  Ansheng Liu ,  Mario J. Paniccia

发明人： Michael T. Morse ,  Olufemi I. Dosunmu ,  Ansheng Liu ,  Mario J. Paniccia

IPC分类号： H01L31/107

CPC分类号： H01L31/1075 ,  H01L27/14629 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/1812 ,  Y02E10/547

摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.

摘要翻译： 公开了一种基于半导体波导的光接收器。 根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。 第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。 倍增区域被定义为接近并与吸收区域分离。 乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。

公开(公告)号：US06891653B2

公开(公告)日：2005-05-10

申请号：US10177872

申请日：2002-06-19

申请人： Ansheng Liu ,  Mario J. Paniccia ,  Michael T. Morse ,  Dmitri E. Nikonov ,  Yi Ding

发明人： Ansheng Liu ,  Mario J. Paniccia ,  Michael T. Morse ,  Dmitri E. Nikonov ,  Yi Ding

IPC分类号： G02B6/122 ,  G02B6/28 ,  G02F1/025 ,  G02F1/295

CPC分类号： G02B6/122 ,  G02B6/2813 ,  G02F1/025 ,  G02F1/2955 ,  G02F2001/217

摘要： An optical steering method and apparatus. In one aspect of the present invention, the disclosed apparatus includes a multi-mode interference (MMI) device disposed in a semiconductor substrate. The MMI device includes an input and a plurality of outputs. Each one of the plurality of outputs of the MMI device is optically coupled to the input of the MMI device. A phase array is disposed in the semiconductor substrate. The phase array includes a plurality of inputs and a plurality of outputs. The plurality of inputs of the phase array optically are coupled to the plurality of outputs of the phase array. The phase array is coupled to control relative phase differences between optical beams output by each one of the plurality of outputs of the phase array.

摘要翻译： 一种光学转向方法和装置。 在本发明的一个方面，所公开的装置包括设置在半导体衬底中的多模干涉（MMI）装置。 MMI设备包括输入和多个输出。 MMI设备的多个输出中的每一个光耦合到MMI设备的输入。 相位阵列设置在半导体衬底中。 相位阵列包括多个输入和多个输出。 光学上的相位阵列的多个输入耦合到相位阵列的多个输出端。 相位阵列被耦合以控制由相位阵列的多个输出中的每一个输出的光束之间的相对相位差。

公开(公告)号：US20050286851A1

公开(公告)日：2005-12-29

申请号：US11205409

申请日：2005-08-16

申请人： Ansheng Liu ,  Richard Jones ,  Mario Paniccia ,  Graham Reed

发明人： Ansheng Liu ,  Richard Jones ,  Mario Paniccia ,  Graham Reed

IPC分类号： G02F1/025 ,  G02B6/10

CPC分类号： G02F1/025 ,  G02F2203/06

摘要： An apparatus and method for modulating a phase of optical beam independent of polarization. In one embodiment, an apparatus according to embodiments of the present invention includes a first region of an optical waveguide disposed in semiconductor material, the first region having a first conductivity type, and a second region of the optical waveguide disposed in the semiconductor material, the second region having a second conductivity type opposite to the first conductivity type. The apparatus also includes a substantially V shaped insulating region disposed between the first and second regions of the optical waveguide, wherein a vertex of the substantially V shaped insulating region forms an intersecting line that is substantially parallel to an optical path of an optical beam to be directed through the optical waveguide.

公开(公告)号：US20050175305A1

公开(公告)日：2005-08-11

申请号：US10775737

申请日：2004-02-10

申请人： Ansheng Liu ,  Richard Jones ,  Mario Paniccia ,  Graham Reed

发明人： Ansheng Liu ,  Richard Jones ,  Mario Paniccia ,  Graham Reed

IPC分类号： G02F1/025 ,  G02B6/10

CPC分类号： G02F1/025 ,  G02F2203/06

摘要： An apparatus and method for modulating a phase of optical beam independent of polarization. In one embodiment, an apparatus according to embodiments of the present invention includes a first region of an optical waveguide disposed in semiconductor material, the first region having a first conductivity type, and a second region of the optical waveguide disposed in the semiconductor material, the second region having a second conductivity type opposite to the first conductivity type. The apparatus also includes a substantially V shaped insulating region disposed between the first and second regions of the optical waveguide, wherein a vertex of the substantially V shaped insulating region forms an intersecting line that is substantially parallel to an optical path of an optical beam to be directed through the optical waveguide.

摘要翻译： 用于独立于偏振调制光束的相位的装置和方法。 在一个实施例中，根据本发明的实施例的装置包括设置在半导体材料中的光波导的第一区域，具有第一导电类型的第一区域和设置在半导体材料中的光波导的第二区域， 第二区域具有与第一导电类型相反的第二导电类型。 该装置还包括设置在光波导的第一和第二区域之间的基本为V形的绝缘区域，其中大致V形的绝缘区域的顶点形成基本上平行于光束的光路的相交线， 引导通过光波导。

公开(公告)号：US20170336565A1

公开(公告)日：2017-11-23

申请号：US15282728

申请日：2016-09-30

申请人： Judson D. Ryckman ,  Harel Frish ,  George A. Ghiurcan ,  Ansheng Liu ,  Haisheng Rong ,  Pradeep Srinivasan ,  Carsten Brandt ,  Isako Hoshino ,  Michael A. Creighton

发明人： Judson D. Ryckman ,  Harel Frish ,  George A. Ghiurcan ,  Ansheng Liu ,  Haisheng Rong ,  Pradeep Srinivasan ,  Carsten Brandt ,  Isako Hoshino ,  Michael A. Creighton

IPC分类号： G02B6/14 ,  G02B1/115 ,  G02B6/122 ,  G02B6/136 ,  G02B6/12

CPC分类号： G02B6/14 ,  G02B1/115 ,  G02B6/1228 ,  G02B6/136 ,  G02B2006/12097 ,  G02B2006/12104 ,  G02B2006/12147 ,  G02B2006/12157

摘要： Embodiments of the present disclosure are directed toward techniques and configurations for a single mode optical coupler device. In some embodiments, the device may include a multi-stage optical taper to convert light from a first mode field diameter to a second mode field diameter larger than the first mode field diameter, and a mirror formed in a dielectric layer under an approximately 45 degree angle with respect to a plane of the dielectric layer to reflect light from the multi-stage optical taper substantially perpendicularly to propagate the light in a single mode fashion. Other embodiments may be described and/or claimed.

公开(公告)号：US20140008750A1

公开(公告)日：2014-01-09

申请号：US13977390

申请日：2012-03-29

申请人： Avi Feshali ,  Tao Sherry Yin ,  Ansheng Liu

发明人： Avi Feshali ,  Tao Sherry Yin ,  Ansheng Liu

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L31/0232 ,  H01L31/02325 ,  H01L31/10 ,  H01L31/102 ,  H01L31/18

摘要： Described are embodiments of apparatuses and systems including photonic devices having a conductive shunt layer, and methods for making such apparatuses and systems. A photonic device may include a device substrate, a photo-active region disposed on a first region of the device substrate, an isolation region in the device substrate, a contact disposed on a second region of the substrate such that the isolation region is located between the contact and the photo-active region, and a conductive material overlying the isolation region to shunt the first region with the second region. Other embodiments may be described and/or claimed.

摘要翻译： 描述了包括具有导电分流层的光子器件的装置和系统的实施例，以及用于制造这种装置和系统的方法。 光子器件可以包括器件衬底，设置在器件衬底的第一区域上的光有源区，器件衬底中的隔离区，设置在衬底的第二区上的接触，使得隔离区位于 所述接触和所述光活性区域以及覆盖所述隔离区域的导电材料以与所述第二区域分流所述第一区域。 可以描述和/或要求保护其他实施例。

公开(公告)号：US20120018744A1

公开(公告)日：2012-01-26

申请号：US12842341

申请日：2010-07-23

申请人： Olufemi I. Dosunmu ,  Ansheng Liu

发明人： Olufemi I. Dosunmu ,  Ansheng Liu

IPC分类号： H01L31/12 ,  H01L31/0232

CPC分类号： H01L31/02165 ,  H01L31/103

摘要： A single optical receiver having a photo-detector with a wide optical bandwidth and high efficiency within the wide optical bandwidth, the photo-detector comprising: a first diode region of first doping type for receiving light; a second diode region of second doping type and of second thickness; an active region for converting the received light to an electronic signal, the active region having a third thickness and configured to reside between the first diode region and the second diode region; and a reflector coupled to the second diode region and having a silicon layer with a fourth thickness, the silicon layer residing between silicon oxide layers of fifth thicknesses, wherein the active region is configured to absorb the light of wavelengths of less than 900 nm, and wherein the reflector is configured to reflect the light of wavelengths from a range of 1260 nm to 1380 nm.

摘要翻译： 一种单光接收器，具有宽光带宽宽光栅和光效率高的光检测器，光检测器包括：用于接收光的第一掺杂类型的第一二极管区; 第二掺杂型和第二厚度的第二二极管区; 用于将所接收的光转换成电子信号的有源区域，所述有源区域具有第三厚度并被配置为驻留在所述第一二极管区域和所述第二二极管区域之间; 以及耦合到所述第二二极管区并具有第四厚度的硅层的反射器，所述硅层位于第五厚度的氧化硅层之间，其中所述有源区被配置为吸收小于900nm的波长的光，以及 其中所述反射器被配置为将波长的光从1260nm到1380nm的范围反射。