摘要:
An incoming signal's duty cycle is transformed to a known value by a first programmable duty cycle generator, and the output of the first programmable duty cycle generator is applied to a second programmable duty cycle generator which includes multiple stages which provide multiple duty cycle tap point outpoints, each having a different known value of a precise duty cycle, wherein the leading edges or trailing edges of the multiple duty cycle tap point output signals are phase aligned with respect to each other by voltage controlled delay matching elements which are replicas of the stages of the second duty cycle generator.
摘要:
A method and system for manufacturing integrated circuit devices having multiple memory units embedded therein. Initially, a single reusable configurable test circuit is fabricated within an integrated circuit device. A number and type of each memory unit embedded within the integrated circuit device are then identified. Finally, the single reusable configurable test circuit is configured, in response to the identifying of a number and type of each memory unit, such that only one test circuit is required for use with multiple integrated circuit devices having multiple diverse memory units embedded therein. The single reusable configurable test circuit can be placed within or outside a fixed core of the integrated circuit device. In addition, the single reusable configurable test circuit can include array built-in self test (ABIST) controller which includes a hierarchical memory configuration that includes a state machine, address counter, compare register and data pattern generator.
摘要:
The present invention utilizes bypass circuitry to shorten the cycle time of a cache memory by shortening the time required to perform a write through read operation (WTR). The bypass circuitry senses when a WTR operation will occur by comparing the encoded read and write addresses to determine when the encoded addresses are equal. When the encoded addresses are equal, a WTR operation is requested and the bypass circuitry sends the data to be written into memory to both the write address location and the cache output buffer. The bypass circuitry does not wait to access the data from the memory cells through the read decode, rather, it directly sends the data to the output buffer. The bypass circuitry provides a parallel read and write operations instead of serial operations during a WTR, thereby shortening the machine cycle time. The bypass circuitry also prevents glitches from being sent to the output when the WTR operation is complete by accessing the memory cells through the read decode even though the cells are disconnected from the output buffer during the WTR operation. The cycle time is be shortened by making the longest operation of the memory shorter.
摘要:
Embodiments that reassemble hierarchical representations in a closed-loop 1×N system are disclosed. Some embodiments comprise creating a flat netlist from a hierarchical representation of a 1×N building block, creating attributes for the flat netlist, and altering one or more elements of the flat netlist, such as by an operation of a logic design tool, a synthesis tool, a physical design tool, or a timing analysis tool. The embodiments further comprise generating a second hierarchical representation of the 1×N building block that reflects the altered element. Further embodiments comprise an apparatus having a 1×N compiler and a reassembler. The 1×N compiler may create attributes for a flat netlist of elements of a hierarchical representation of a 1×N building block. The reassembler may use the attributes to create a second hierarchical representation of the 1×N building block that reflects alteration of elements to the flat netlist.
摘要:
This invention provides a method for determining leakage current in a CMOS circuit having several devices. It includes the steps of reading a netlist which describes the circuit and includes information on both these devices in the circuit and how these devices are interconnected. Next, an input signal state data file is generated which provides all of the possible input states for the circuit. A determination is made of which devices in the circuit are in an OFF state for each of the input signal states provided. Then the leakage current for each of these devices in the OFF state is computed for each of the input signal states.
摘要:
A standard cell library including a first set of cells including mixed threshold voltage cells. Each mixed threshold voltage cell includes a first threshold voltage device having a first threshold voltage and a second threshold voltage device having a second threshold voltage, in which the first threshold voltage is different from the second threshold voltage. The standard cell library further includes a second set of cells including non-mixed threshold voltage cells. Each non-mixed threshold voltage cell includes threshold voltage devices having a same threshold voltage. A mixed threshold voltage cell has substantially a same footprint as a non-mixed threshold voltage cell.
摘要:
A method, system and processor for adaptively and selectively controlling the instruction execution frequency of a data processor. Processing logic or a software compiler determines when a number of first-type instructions, requiring longer execution latency, are scheduled to be executed. The logic/compiler then triggers the CPM unit to automatically switch the execution frequency of the instruction processor from a first frequency that is optimal for processing regular-type instructions to a second, pre-established lower frequency that is optimal for processing the first-type instructions, to enable more efficient execution and higher execution throughput of the number of first-type operations within the processor. When the first-type instructions have completed execution, the processor's instruction execution frequency is returned to the first optimal frequency.
摘要:
Embodiments that create parent-child relationships for reuse of 1×N building blocks in a closed-loop 1×N system are disclosed. Some methods comprise generating a representation of an IC design, inserting a first 1×N building block into the representation, and creating an association between the first 1×N building block and a second 1×N building block. The association enables the first 1×N building block to inherit alterations of attributes of the second 1×N building block and enables unique alterations of attributes of the first 1×N building block which differ from the second 1×N building block. Further embodiments comprise an apparatus having an equivalency determiner to determine a logical equivalence between a two 1×N building blocks, an attribute creator that creates a set of attributes and enables one of the 1×N building blocks to inherit parent attributes and comprise child attributes.
摘要:
A circuit for reducing current leakage in hierarchical bit-line architectures includes a sense amplifier having transistors, the sense amplifier coupled to bit-lines of cells in a memory array, the sense amplifier configured for detecting stored data from one of the cells; an output latch having transistors, the output latch selectively coupled to a global bit-line of the sense amplifier having a logical state, the output latch configured for selectively reading out stored data from one of the cells through the global bit-line; and a transmission gating device coupled between the sense amplifier and the output latch for selectively coupling the sense amplifier to the output latch correspondingly eliminating a first leakage path and forming a second leakage path, the first leakage path being between the sense amplifier and the output latch, the second leakage path formed within the sense amplifier.
摘要:
A method for forming an interconnect structure, the interconnect structure comprising: a lower level wire having a side and a bottom, the lower level wire comprising: a lower core conductor and a lower conductive liner, the lower conductive liner on the side and the bottom of the lower level wire; an upper level wire having a side and a bottom, the upper level wire comprising an upper core conductor and an upper conductive liner, the upper conductive liner on the side and the bottom of the upper level wire; and the upper conductive liner in contact with the lower core conductor and also in contact with the lower conductive liner in a liner-to-liner contact region.