MUTANT G-CSF FUSION PROTEIN, AND PREPARATION AND USE THEREOF
    21.
    发明申请
    MUTANT G-CSF FUSION PROTEIN, AND PREPARATION AND USE THEREOF 有权
    突变型G-CSF融合蛋白,其制备及其用途

    公开(公告)号:US20130164251A1

    公开(公告)日:2013-06-27

    申请号:US13575752

    申请日:2010-06-30

    IPC分类号: C07K14/535 C07K14/765

    摘要: The present invention relates to a mutant G-CSF fusion protein. The mutant G-CSF fusion protein is a fusion protein having the activity of stimulating the proliferation of neutrophilic granulocytes, and having a basic structure of G-CSF/carrier protein or carrier protein/G-CSF; wherein the G-CSF moiety comprises multipoint substitutions thus resulting in changes in biological activity and binding affinity. Compared with existing products, the mutant G-CSF fusion protein in the present invention has longer half-life and higher biological activity. Administration of the pharmaceutical preparation containing this mutant G-CSF fusion protein could be used in the treating neutropenia.

    摘要翻译: 本发明涉及突变型G-CSF融合蛋白。 突变型G-CSF融合蛋白是具有刺激嗜中性粒细胞增殖活性的融合蛋白,具有G-CSF /载体蛋白或载体蛋白/ G-CSF的基本结构; 其中G-CSF部分包含多点置换,从而导致生物活性和结合亲和力的变化。 与现有产品相比,本发明的突变型G-CSF融合蛋白具有较长的半衰期和较高的生物活性。 含有该突变型G-CSF融合蛋白的药物制剂的给药可用于治疗中性粒细胞减少症。

    Processes for forming channels in thin-film transistors
    24.
    发明授权
    Processes for forming channels in thin-film transistors 有权
    用于在薄膜晶体管中形成沟道的工艺

    公开(公告)号:US08361891B2

    公开(公告)日:2013-01-29

    申请号:US12332827

    申请日:2008-12-11

    IPC分类号: H01L21/283 H01L29/786

    摘要: Methods for consistently reproducing channels of small length are disclosed. An ink composition comprising silver nanoparticles and a surface modification agent is used. The surface modification agent may also act as a stabilizer for the nanoparticles. A first line is printed which forms a modified region around the first line. A second line is printed, which is repelled from the modified region. As a result, a channel between the first line and the second line is formed.

    摘要翻译: 公开了一直重现小长度通道的方法。 使用包含银纳米颗粒和表面改性剂的油墨组合物。 表面改性剂也可以用作纳米颗粒的稳定剂。 打印第一行,形成围绕第一行的修改区域。 打印出第二行,从修改后的区域排除。 结果,形成第一线和第二线之间的通道。

    Semiconducting ink formulation
    29.
    发明授权
    Semiconducting ink formulation 有权
    半导体油墨配方

    公开(公告)号:US08052895B2

    公开(公告)日:2011-11-08

    申请号:US12248161

    申请日:2008-10-09

    IPC分类号: H01B1/12 H01B1/20

    摘要: A semiconducting ink formulation comprises a semiconducting material; a first solvent; and a second solvent which is miscible with the first solvent, has a surface tension equal to or greater than the surface tension of the first solvent, and in which the semiconducting material has a solubility of less than 0.1 wt % at room temperature The surface tension of the ink formulation can be controlled, allowing the formation of semiconducting layers in organic thin film transistors, including top-gate transistors.

    摘要翻译: 半导体油墨制剂包含半导体材料; 第一溶剂; 和与第一溶剂混溶的第二溶剂,其表面张力等于或大于第一溶剂的表面张力,并且其中半导体材料在室温下的溶解度小于0.1wt%。表面张力 可以控制油墨配方,允许在包括顶栅晶体管的有机薄膜晶体管中形成半导体层。