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公开(公告)号:US20130164251A1
公开(公告)日:2013-06-27
申请号:US13575752
申请日:2010-06-30
申请人: Xiaofang Wen , Yiliang Wu , Yefei Wang , Zhiyu Yang , Min Fan , Yujiao Wang , Xiaochun Fang , You Lu
发明人: Xiaofang Wen , Yiliang Wu , Yefei Wang , Zhiyu Yang , Min Fan , Yujiao Wang , Xiaochun Fang , You Lu
IPC分类号: C07K14/535 , C07K14/765
CPC分类号: C07K14/535 , A61K38/00 , C07K2319/31
摘要: The present invention relates to a mutant G-CSF fusion protein. The mutant G-CSF fusion protein is a fusion protein having the activity of stimulating the proliferation of neutrophilic granulocytes, and having a basic structure of G-CSF/carrier protein or carrier protein/G-CSF; wherein the G-CSF moiety comprises multipoint substitutions thus resulting in changes in biological activity and binding affinity. Compared with existing products, the mutant G-CSF fusion protein in the present invention has longer half-life and higher biological activity. Administration of the pharmaceutical preparation containing this mutant G-CSF fusion protein could be used in the treating neutropenia.
摘要翻译: 本发明涉及突变型G-CSF融合蛋白。 突变型G-CSF融合蛋白是具有刺激嗜中性粒细胞增殖活性的融合蛋白,具有G-CSF /载体蛋白或载体蛋白/ G-CSF的基本结构; 其中G-CSF部分包含多点置换,从而导致生物活性和结合亲和力的变化。 与现有产品相比,本发明的突变型G-CSF融合蛋白具有较长的半衰期和较高的生物活性。 含有该突变型G-CSF融合蛋白的药物制剂的给药可用于治疗中性粒细胞减少症。
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公开(公告)号:US20130140494A1
公开(公告)日:2013-06-06
申请号:US13312315
申请日:2011-12-06
申请人: Yiliang Wu , Anthony James Wigglesworth , Ping Liu
发明人: Yiliang Wu , Anthony James Wigglesworth , Ping Liu
IPC分类号: H01B1/12
CPC分类号: H01L51/0035 , C08G61/124 , C08G61/125 , C08G61/126 , C08G2261/124 , C08G2261/1412 , C08G2261/3221 , C08G2261/3222 , C08G2261/3223 , C08G2261/344 , C08G2261/414 , C08G2261/51 , C08G2261/92 , C08L65/00 , H01L51/0036 , H01L51/0043 , H01L51/0053 , H01L51/0541 , H01L51/0545 , H01L51/0558
摘要: A semiconductor composition for producing a semiconducting layer with consistently high mobility is disclosed. The semiconductor composition includes a diketopyrrolopyrrole-thiophene copolymer and a non-aromatic halogenated hydrocarbon solvent. The copolymer has a structure disclosed within. Preferably, the non-aromatic halogenated hydrocarbon solvent contains at least 2 carbon atoms and at least 3 halogen atoms.
摘要翻译: 公开了用于制造具有一致的高迁移率的半导体层的半导体组合物。 半导体组合物包括二酮吡咯并吡咯 - 噻吩共聚物和非芳族卤代烃溶剂。 共聚物具有公开的结构。 优选地,非芳族卤代烃溶剂含有至少2个碳原子和至少3个卤素原子。
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公开(公告)号:US08372312B1
公开(公告)日:2013-02-12
申请号:US13274484
申请日:2011-10-17
申请人: Yiliang Wu , Ping Liu , Anthony James Wigglesworth
发明人: Yiliang Wu , Ping Liu , Anthony James Wigglesworth
CPC分类号: H01L51/0074 , C07D495/14 , H01L51/0545
摘要: Disclosed herein is an asymmetrical semiconducting compound of Formula (I): wherein R1 and R2 are as described herein. The compound is useful in a semiconducting layer for an electronic device, such as a thin-film transistor. Devices including the compound exhibit high mobility and excellent stability.
摘要翻译: 本文公开了式(I)的不对称半导体化合物:其中R 1和R 2如本文所述。 该化合物可用于诸如薄膜晶体管的电子器件的半导体层。 包括该化合物的装置表现出高移动性和优异的稳定性。
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公开(公告)号:US08361891B2
公开(公告)日:2013-01-29
申请号:US12332827
申请日:2008-12-11
申请人: Yiliang Wu , Jason S. Doggart , Ping Liu , Shiping Zhu
发明人: Yiliang Wu , Jason S. Doggart , Ping Liu , Shiping Zhu
IPC分类号: H01L21/283 , H01L29/786
CPC分类号: H01L51/0558 , C09D11/38 , C09D11/52 , H01L51/0022 , H01L51/102
摘要: Methods for consistently reproducing channels of small length are disclosed. An ink composition comprising silver nanoparticles and a surface modification agent is used. The surface modification agent may also act as a stabilizer for the nanoparticles. A first line is printed which forms a modified region around the first line. A second line is printed, which is repelled from the modified region. As a result, a channel between the first line and the second line is formed.
摘要翻译: 公开了一直重现小长度通道的方法。 使用包含银纳米颗粒和表面改性剂的油墨组合物。 表面改性剂也可以用作纳米颗粒的稳定剂。 打印第一行,形成围绕第一行的修改区域。 打印出第二行,从修改后的区域排除。 结果,形成第一线和第二线之间的通道。
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公开(公告)号:US20120187380A1
公开(公告)日:2012-07-26
申请号:US13011139
申请日:2011-01-21
申请人: Yiliang Wu
发明人: Yiliang Wu
CPC分类号: H01L51/0048 , B82Y10/00 , H01L51/0036 , H01L51/0566 , Y10S977/742 , Y10S977/75
摘要: A thin film transistor has a semiconducting layer comprising a polythiophene and carbon nanotubes. The semiconducting layer exhibits high mobility and high current on/off ratio.
摘要翻译: 薄膜晶体管具有包含聚噻吩和碳纳米管的半导体层。 半导体层表现出高迁移率和高电流开/关比。
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公开(公告)号:US08154080B2
公开(公告)日:2012-04-10
申请号:US12328849
申请日:2008-12-05
申请人: Yiliang Wu , Paul F Smith
发明人: Yiliang Wu , Paul F Smith
IPC分类号: H01L29/06
CPC分类号: H01L51/0537 , H01L51/052 , H01L51/0541 , H01L51/0545 , Y10T428/31504 , Y10T428/31663 , Y10T428/31855 , Y10T428/31931
摘要: An electronic device including in any sequence: (a) a semiconductor layer; and (b) a dielectric structure comprising a lower-k dielectric polymer and a higher-k dielectric polymer, wherein the lower-k dielectric polymer is in a lower concentration than the higher-k dielectric polymer in a region of the dielectric structure closest to the semiconductor layer.
摘要翻译: 一种电子设备,包括以下任何顺序:(a)半导体层; 和(b)包含较低k电介质聚合物和较高k电介质聚合物的电介质结构,其中较低k电介质聚合物的浓度低于介电结构最接近 半导体层。
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公开(公告)号:US08154013B2
公开(公告)日:2012-04-10
申请号:US12273585
申请日:2008-11-19
申请人: Yuning Li , Yiliang Wu , Ping Liu , Paul F. Smith
发明人: Yuning Li , Yiliang Wu , Ping Liu , Paul F. Smith
CPC分类号: H01L51/0003 , C07D493/04 , C07D495/04 , C07D517/04 , H01L51/0035 , H01L51/0043 , H01L51/0072 , H01L51/0541 , H01L51/0545
摘要: A thin-film transistor comprises a semiconducting layer comprising a semiconducting material selected from Formula (I) or (II): wherein X, R1, R2, R3, R4, R5 a, b, and n are as described herein. Semiconducting compositions of Formula (I) or (II) are also described.
摘要翻译: 薄膜晶体管包括包含选自式(I)或(II)的半导体材料的半导体层:其中X,R 1,R 2,R 3,R 4,R 5 a,b和n如本文所述。 还描述了式(I)或(II)的半导体组合物。
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公开(公告)号:US08084765B2
公开(公告)日:2011-12-27
申请号:US11745308
申请日:2007-05-07
申请人: Yu Qi , Yiliang Wu , Yuning Li , Beng S. Ong
发明人: Yu Qi , Yiliang Wu , Yuning Li , Beng S. Ong
CPC分类号: H01L21/02126 , C08K5/5419 , C08K5/549 , C08L25/18 , C08L61/28 , H01L21/02118 , H01L21/3122 , H01L51/052 , Y10T428/31663
摘要: An electronic device, such as a thin film transistor, is disclosed having a dielectric layer formed from a composition comprising a compound having at least one phenol group and at least one group containing comprising silicon. The resulting dielectric layer has good electrical properties.
摘要翻译: 公开了一种电子器件,例如薄膜晶体管,其具有由包括具有至少一个酚基的化合物和至少一个含有硅的基团的组合物形成的介电层。 所得的电介质层具有良好的电性能。
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公开(公告)号:US08052895B2
公开(公告)日:2011-11-08
申请号:US12248161
申请日:2008-10-09
申请人: Yiliang Wu , Paul F. Smith
发明人: Yiliang Wu , Paul F. Smith
CPC分类号: H01L51/0007 , C08G61/126 , C08G2261/3223 , C09D11/102 , C09D11/36 , C09D11/52 , C09D165/00 , H01L51/0003 , H01L51/0036 , H01L51/0545
摘要: A semiconducting ink formulation comprises a semiconducting material; a first solvent; and a second solvent which is miscible with the first solvent, has a surface tension equal to or greater than the surface tension of the first solvent, and in which the semiconducting material has a solubility of less than 0.1 wt % at room temperature The surface tension of the ink formulation can be controlled, allowing the formation of semiconducting layers in organic thin film transistors, including top-gate transistors.
摘要翻译: 半导体油墨制剂包含半导体材料; 第一溶剂; 和与第一溶剂混溶的第二溶剂,其表面张力等于或大于第一溶剂的表面张力,并且其中半导体材料在室温下的溶解度小于0.1wt%。表面张力 可以控制油墨配方,允许在包括顶栅晶体管的有机薄膜晶体管中形成半导体层。
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30.
公开(公告)号:US08049205B2
公开(公告)日:2011-11-01
申请号:US11398931
申请日:2006-04-06
申请人: Beng S. Ong , Yuning Li , Yiliang Wu
发明人: Beng S. Ong , Yuning Li , Yiliang Wu
CPC分类号: H01L51/0036 , H01L51/0558
摘要: An electronic device comprising a semiconductive material of Formula (I) wherein R is a suitable hydrocarbon or a heteroatom containing group; and n represents the number of repeating units.
摘要翻译: 一种包含式(I)的半导体材料的电子器件,其中R是合适的烃或含杂原子的基团; n表示重复单元的数量。
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