公开(公告)号：US20070108434A1

公开(公告)日：2007-05-17

申请号：US11281093

申请日：2005-11-17

Applicant: Anthony Kurtz ,  Boaz Kochman

Inventor： Anthony Kurtz ,  Boaz Kochman

IPC: H01L29/06 ,  H01L31/00

CPC classification number: G01L9/0098 ,  B82Y10/00 ,  G01L1/005 ,  H01L29/127

Abstract: A semiconductor heterostructure based pressure switch comprising: first and second small bandgap material regions separated by a larger bandgap material region; a third small bandgap material region within the region of larger bandgap material, the third material region and larger bandgap material region defining at least one quantum dot; and, first and second electrodes electrically coupled to the first and second small bandgap material regions, respectively, wherein the electrodes are sufficiently proximate to said quantum dot to facilitate electron tunneling there between when a pressure is applied to the bandgap material defining the quantum dot.

Abstract translation: 一种基于半导体异质结构的压力开关，包括：由较大带隙材料区域分隔的第一和第二小带隙材料区域; 在较大带隙材料的区域内的第三小带隙材料区域，第三材料区域和限定至少一个量子点的较大带隙材料区域; 以及分别电耦合到第一和第二小带隙材料区域的第一和第二电极，其中当将压力施加到限定量子点的带隙材料时，电极足够靠近所述量子点以促进电子隧穿。

公开(公告)号：US20070039391A1

公开(公告)日：2007-02-22

申请号：US11585546

申请日：2006-10-24

Applicant: Anthony Kurtz ,  Alexander Ned

Inventor： Anthony Kurtz ,  Alexander Ned

IPC: G01L19/04

CPC classification number: G01L19/0084 ,  G01L9/0055

Abstract: An ultra high temperature hermetically protected transducer includes a sensor chip having an active area upon which is deposited piezoresistive sensing elements. The elements are located on the top surface of the silicon wafer chip and have leads and terminals extending from the active area of the chip. The active area is surrounded with an extending rim or frame. The active area is coated with an oxide layer which passivates the piezoresistive sensing network. The chip is then attached to a glass pedestal, which is larger in size than the sensor chip. The glass pedestal has a through hole or aperture at each corner. The entire composite structure is then mounted onto a high temperature header with the metallized regions of the header being exposed to the holes in the glass pedestal; a high temperature lead is then bonded directly to the metallized contact area of the sensor chip at one end. The leads are of sufficient length to extend into the through holes in the glass pedestal. A sealing cover is then attached to the entire composite sensor to hermetically seal all of the interconnections. The sealing cover is a glass structure, has a central aperture which corresponds to the aperture formed by the frame, allowing the active area of the sensor to be exposed to the pressure medium. The sealing cover is bonded to the periphery of the rim and to the glass supporting pedestal.

Abstract translation: 超高温密封保护换能器包括具有有源区域的传感器芯片，在该有源区域上形成压电感测元件。 这些元件位于硅晶片芯片的顶表面上并且具有从芯片的有源区域延伸的引线和端子。 活动区域被延伸的边缘或框架包围。 有源区域涂覆有钝化压阻感测网络的氧化物层。 然后将芯片连接到玻璃基座，其尺寸大于传感器芯片。 玻璃基座在每个角落都有一个通孔或孔。 然后将整个复合结构安装到高温集管上，其中集管的金属化区域暴露于玻璃基座中的孔; 然后将高温引线一端直接粘合到传感器芯片的金属化接触区域。 引线具有足够的长度以延伸到玻璃基座中的通孔中。 然后将密封盖连接到整个复合传感器以密封所有的互连。 密封盖是玻璃结构，具有对应于由框架形成的孔的中心孔，允许传感器的有效区域暴露于压力介质。 密封盖结合到边缘的周边和玻璃支撑基座上。

公开(公告)号：US20070034975A1

公开(公告)日：2007-02-15

申请号：US11403694

申请日：2006-04-13

Applicant: Anthony Kurtz

Inventor： Anthony Kurtz

IPC: H01L29/84

CPC classification number: B82Y10/00 ,  G01L1/005 ,  G01L1/18 ,  G01L9/0055 ,  Y10S977/864 ,  Y10S977/932

Abstract: There is disclosed a nanotube sensor which essentially employs a straight or twisted nanotube deposited on a supporting surface, such as silicon, silicon dioxide and some other semiconductor or metal material. The nanotube is basically a graphite device which is now subjected to stress causing the electrical characteristics of the nanotube to change according to stress. The nanotube is then provided in a circuit, such as a Wheatstone Bridge or other circuit, and the circuit will produce an output signal proportional to the change in electrical characteristics of the nanotube according to the applied force.

公开(公告)号：US20060283257A1

公开(公告)日：2006-12-21

申请号：US11157584

申请日：2005-06-21

Applicant: Anthony Kurtz ,  Alexander Ned

Inventor： Anthony Kurtz ,  Alexander Ned

IPC: G01L7/08

CPC classification number: G01L19/147

Abstract: A differential pressure sensor has a semiconductor wafer having a top and bottom surface. The top surface of the wafer has a central active area containing piezoresistive elements. These elements are passivated and covered with a layer of silicon dioxide. Each element has a contact terminal associated therewith. The semiconductor wafer has an outer peripheral silicon frame surrounding the active area. The semiconductor wafer is bonded to a glass cover member via an anodic or electrostatic bond by bonding the outer peripheral frame to the periphery of the glass wafer. An inner silicon dioxide frame forms a compression bond with the glass wafer when the glass wafer is bonded to the silicon frame. This compression bond prevents deleterious fluids from entering the active area or destroying the silicon. The above described apparatus is mounted on a header such that through holes in the glass wafer are aligned with the header terminals. The header has pins which are directed from the header terminals to enable contact to be made to the unit. Both the top and bottom surfaces of the semiconductor wafer are coated with silicon dioxide which acts to protect all the elements from deleterious substances. Thus a first pressure is applied to one surface and a second pressure is applied to the other surface to enable differential operation.

Abstract translation: 差压传感器具有具有顶表面和底表面的半导体晶片。 晶片的顶表面具有包含压阻元件的中心活动区域。 这些元件被钝化并被一层二氧化硅覆盖。 每个元件具有与其相关联的接触端子。 半导体晶片具有围绕有源区域的外周硅框架。 通过将外周框架结合到玻璃晶片的周边，通过阳极或静电键将半导体晶片接合到玻璃盖构件。 当玻璃晶片结合到硅框架时，内部二氧化硅框架与玻璃晶片形成压缩结合。 这种压接键可防止有害流体进入活性区或破坏硅。 将上述装置安装在集管上，使得玻璃晶片中的通孔与集管端子对准。 插头具有从插头端子引导的引脚，以使得能够对该单元进行接触。 半导体晶片的顶表面和底表面均涂覆有二氧化硅，其用于保护所有元素免受有害物质的影响。 因此，第一压力施加到一个表面，并且第二压力施加到另一个表面以实现差动操作。

公开(公告)号：US20060132315A1

公开(公告)日：2006-06-22

申请号：US11004058

申请日：2004-12-03

Applicant: Anthony Kurtz

Inventor： Anthony Kurtz

IPC: G08B23/00

CPC classification number: G07C9/00158 ,  G06F21/32 ,  G06K9/00382

Abstract: A personal identification system employs a matrix of pressure sensors mounted to a plate having a template of a human hand. When a person's hand is placed on the plate and overlying the template a pressure profile of the person's hand is provided. This profile is compared with a stored pressure profile of the same person's hand. If the pressure points or profiles correlate a positive identification of the person is made.

Abstract translation: 个人识别系统采用安装在具有人手模板的板上的压力传感器矩阵。 当人的手被放在盘子上并覆盖模板时，提供人的手的压力分布。 该配置文件与同一人的手的存储压力配置文件进行比较。 如果压力点或轮廓相关，则进行人的正面识别。

公开(公告)号：US20050235754A1

公开(公告)日：2005-10-27

申请号：US11100652

申请日：2005-04-07

Applicant: Anthony Kurtz ,  Tonghuo Shang ,  Boaz Kochman

Inventor： Anthony Kurtz ,  Tonghuo Shang ,  Boaz Kochman

IPC: G01L7/08 ,  G01L13/02 ,  G01L19/06

CPC classification number: G01L7/08 ,  G01L9/06 ,  G01L13/025 ,  G01L19/0609

Abstract: A semiconductor filter is provided to operate in conjunction with a differential pressure transducer. The filter receives a high and very low frequency static pressure attendant with a high frequency low dynamic pressure at one end, the filter operates to filter said high frequency dynamic pressure to provide only the static pressure at the other filter end. A differential transducer receives both dynamic and static pressure at one input port and receives said filtered static pressure at the other port where said transducer provides an output solely indicative of dynamic pressure. The filter in one embodiment has a series of etched channels directed from an input end to an output end. The channels are etched pores of extremely small diameter and operate to attenuate or filter the dynamic pressure. In another embodiment, a spiral tubular groove is found between a silicon wafer and a glass cover wafer, an input port of the groove receives both the static and dynamic pressure with an output port of the groove providing only static pressure. The groove filters attenuate dynamic pressure to enable the differential transducer to provide an output only indicative of dynamic pressure by cancellation of the static pressure.

Abstract translation: 提供半导体滤波器以与差压传感器一起操作。 过滤器在一端接收高频，低频静压泵，其一端具有高频低动态压力，滤波器用于过滤所述高频动态压力，仅提供另一滤芯端的静压力。 差分换能器在一个输入端口处接收动态和静态压力，并且在另一端口处接收所述过滤的静态压力，其中所述换能器提供仅指示动态压力的输出。 一个实施例中的滤波器具有从输入端指向输出端的一系列蚀刻通道。 通道是非常小直径的蚀刻孔，用于衰减或过滤动态压力。 在另一个实施例中，在硅晶片和玻璃盖晶片之间发现螺旋管状沟槽，槽的输入端口接收静态压力和动态压力，而槽的输出端口仅提供静态压力。 沟槽滤波器衰减动态压力，使得差分换能器仅通过消除静压来提供仅指示动态压力的输出。

公开(公告)号：US08242448B2

公开(公告)日：2012-08-14

申请号：US12927248

申请日：2010-11-09

Applicant: Craig Prater ,  Michael Lo ,  Doug Gotthard ,  Anthony Kurtz ,  Kevin Kjoller

Inventor： Craig Prater ,  Michael Lo ,  Doug Gotthard ,  Anthony Kurtz ,  Kevin Kjoller

IPC: G01J5/00

CPC classification number: G01N21/3563 ,  G01Q30/02

Abstract: Dynamic IR radiation power control, beam steering and focus adjustment for use in a nanoscale IR spectroscopy system based on an Atomic Force Microscope. During illumination with a beam from an IR source, an AFM probe tip interaction with a sample due to local IR sample absorption is monitored. The power of the illumination at the sample is dynamically decreased to minimize sample overheating in locations/wavelengths where absorption is high and increased in locations/wavelengths where absorption is low to maintain signal to noise. Beam alignment and focus optimization as a function of wavelength are automatically performed.

Abstract translation: 动态IR辐射功率控制，光束转向和聚焦调整，用于基于原子力显微镜的纳米级红外光谱系统。 在用来自IR源的光照射期间，监测由于局部IR样品吸收而导致AFM探针尖端与样品的相互作用。 动态地降低样品照度的功率，以使吸收率高的位置/波长处的样品过热度最小化，吸收低的位置/波长增加，以保持信噪比。 自动执行光束对准和聚焦优化作为波长的函数。

公开(公告)号：US08177422B2

公开(公告)日：2012-05-15

申请号：US12228877

申请日：2008-08-15

Applicant: Kevin Kjoller ,  Khoren Sahagian ,  Doug Gotthard ,  Anthony Kurtz ,  Craig Prater ,  Roshan Shetty ,  Michael Reading

Inventor： Kevin Kjoller ,  Khoren Sahagian ,  Doug Gotthard ,  Anthony Kurtz ,  Craig Prater ,  Roshan Shetty ,  Michael Reading

IPC: G01N25/00 ,  G01K3/00 ,  G01K7/00

CPC classification number: G01Q60/58 ,  G01Q30/04

Abstract: A system and method for automatic analysis of temperature transition data over an area of a sample surface. The system relies on the use of a microfabricated probe, which can be rapidly heated and cooled and has a sharp tip to provide high spatial resolution. The system also has fast x-y-z positioners, data collection, and algorithms that allow automatic analysis of and visualization of temperature transition data.

Abstract translation: 用于在样品表面的区域上自动分析温度转变数据的系统和方法。 该系统依赖于使用微加工探针，其可以被快速加热和冷却，并且具有尖锐的尖端以提供高的空间分辨率。 该系统还具有快速的x-y-z定位器，数据采集和算法，可以自动分析和可视化温度转换数据。

公开(公告)号：US20070159294A1

公开(公告)日：2007-07-12

申请号：US11702761

申请日：2007-02-06

Applicant: Anthony Kurtz ,  Adam Kane

Inventor： Anthony Kurtz ,  Adam Kane

IPC: H01C10/10

CPC classification number: G01L19/0645

Abstract: A pressure sensor header for a pressure transducer includes a header shell having a sensor cavity formed therein, a sensor element disposed in the sensor cavity, a fluid medium disposed in the sensor cavity, an isolation diaphragm closing the sensor cavity, and a joining arrangement disposed at an interface of the isolation diaphragm and the header shell, the joining arrangement joining the isolation diaphragm with the header shell. The isolation diaphragm is an integral unit comprising a thin membrane surrounded by a thicker outer ring. The joining arrangement has a recessed female joining element formed in one of the outer ring of the isolation diaphragm and the header shell, and a protruding male joining element formed on the other one of the outer ring of the isolation diaphragm and the header shell, the male joining element received in the female joining element.

公开(公告)号：US20070114624A1

公开(公告)日：2007-05-24

申请号：US11651796

申请日：2007-01-10

Applicant: Anthony Kurtz ,  Alexander Ned

Inventor： Anthony Kurtz ,  Alexander Ned

IPC: H01L29/84

CPC classification number: G01L19/147

Abstract: A differential pressure sensor has a semiconductor wafer having a top and bottom surface. The top surface of the wafer has a central active area containing piezoresistive elements. These elements are passivated and covered with a layer of silicon dioxide. Each element has a contact terminal associated therewith. The semiconductor wafer has an outer peripheral silicon frame surrounding the active area. The semiconductor wafer is bonded to a glass cover member via an anodic or electrostatic bond by bonding the outer peripheral frame to the periphery of the glass wafer. An inner silicon dioxide frame forms a compression bond with the glass wafer when the glass wafer is bonded to the silicon frame. This compression bond prevents deleterious fluids from entering the active area or destroying the silicon. The above described apparatus is mounted on a header such that through holes in the glass wafer are aligned with the header terminals. The header has pins which are directed from the header terminals to enable contact to be made to the unit. Both the top and bottom surfaces of the semiconductor wafer are coated with silicon dioxide which acts to protect all the elements from deleterious substances. Thus a first pressure is applied to one surface and a second pressure is applied to the other surface to enable differential operation.