公开(公告)号：US11177128B2

公开(公告)日：2021-11-16

申请号：US16644150

申请日：2018-09-11

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Abhijit Basu Mallick ,  Kurtis Leschkies ,  Steven Verhaverbeke ,  Shishi Jiang

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/687

Abstract: Methods for forming a semiconductor structure including a silicon (Si) containing layer or a silicon germanium (SiGe) layer are provided. The methods include depositing a protective barrier (e.g., liner) layer over the semiconductor structure, forming a flowable dielectric layer over the liner layer, and exposing the flowable dielectric layer to high pressure steam. A cluster system includes a first deposition chamber configured to form a semiconductor structure, a second deposition chamber configured to perform a liner deposition process to form a liner layer, a third deposition chamber configured to form a flowable dielectric layer over the liner layer, an annealing chamber configured to expose the flowable oxide layer to high pressure steam.

公开(公告)号：US11011384B2

公开(公告)日：2021-05-18

申请号：US15946107

申请日：2018-04-05

Applicant: Applied Materials, Inc.

Inventor： Abhijit Basu Mallick ,  Pramit Manna ,  Shishi Jiang

IPC: H01L21/76 ,  H01L21/36 ,  H01L21/20 ,  H01L21/205 ,  H01L21/3105 ,  H01L21/02

Abstract: Methods for seam-less gapfill comprising forming a flowable film by PECVD, annealing the flowable film with a reactive anneal to form an annealed film and curing the flowable film or annealed film to solidify the film. The flowable film can be formed using a higher order silane and plasma. The reactive anneal may use a silane or higher order silane. A UV cure, or other cure, can be used to solidify the flowable film or the annealed film.

公开(公告)号：US10580642B2

公开(公告)日：2020-03-03

申请号：US15945117

申请日：2018-04-04

Applicant: Applied Materials, Inc.

Inventor： Abhijit Basu Mallick ,  Pramit Manna ,  Shishi Jiang

IPC: H01L21/02 ,  H01L21/285 ,  C23C16/04 ,  C23C16/513 ,  C23C16/30

Abstract: Methods for seam-less gap fill comprising forming a flowable film by PECVD, treating the flowable film to form an Si—X film where X=C, O or N and curing the flowable film or Si—X film to solidify the film. The flowable film can be formed using a higher order silane and plasma. A UV cure, or other cure, can be used to solidify the flowable film or the Si—X film.

公开(公告)号：US20190393030A1

公开(公告)日：2019-12-26

申请号：US16445659

申请日：2019-06-19

Applicant: Applied Materials, Inc.

Inventor： Shishi Jiang ,  Eswaranand Venkatasubramanian ,  Pramit Manna ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  C23C16/56 ,  C23C16/50 ,  C23C16/46

Abstract: Methods are described for forming flowable carbon layers on a semiconductor substrate. A local excitation (such as a plasma in PECVD) may be applied as described herein to a carbon-containing precursor to form a flowable carbon film on a substrate. A remote excitation method has also been found to produce flowable carbon films by exciting a stable precursor to produce a radical precursor which is then combined with an unexcited carbon-containing precursor in the substrate processing region. An optional post deposition plasma exposure may also cure or solidify the flowable film after deposition. Methods for forming air gaps using the flowable films described herein are also described.

公开(公告)号：US10460933B2

公开(公告)日：2019-10-29

申请号：US15936751

申请日：2018-03-27

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Shishi Jiang ,  Rui Cheng ,  Abhijit Basu Mallick

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/762 ,  H01L29/06

Abstract: Methods for gapfilling semiconductor device features, such as high aspect ratio trenches, with amorphous silicon film are provided. First, a substrate having features formed in a first surface thereof is positioned in a processing chamber. A conformal deposition process is then performed to deposit a conformal silicon liner layer on the sidewalls of the features and the exposed first surface of the substrate between the features. A flowable deposition process is then performed to deposit a flowable silicon layer over the conformal silicon liner layer. A curing process is then performed to increase silicon density of the flowable silicon layer. Methods described herein generally improve overall etch selectivity by the conformal silicon deposition and the flowable silicon deposition two-step process to realize seam-free gapfilling between features with high quality amorphous silicon film.

公开(公告)号：US20180358264A1

公开(公告)日：2018-12-13

申请号：US16006402

申请日：2018-06-12

Applicant: Applied Materials, Inc

Inventor： Yong Wu ,  Yihong Chen ,  Shishi Jiang ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/285

Abstract: Methods for filling a substrate feature with a seamless tungsten fill are described. The methods include depositing a tungsten film, oxidizing the tungsten film to a tungsten oxide pillar, reducing the tungsten oxide film to a seamless tungsten gapfill and optionally depositing additional tungsten on the tungsten gapfill.

公开(公告)号：US20180286669A1

公开(公告)日：2018-10-04

申请号：US15945117

申请日：2018-04-04

Applicant: Applied Materials, Inc.

Inventor： Abhijit Basu Mallick ,  Pramit Manna ,  Shishi Jiang

IPC: H01L21/02 ,  H01L21/285

Abstract: Methods for seam-less gap fill comprising forming a flowable film by PECVD, treating the flowable film to form an Si—X film where X=C, O or N and curing the flowable film or Si—X film to solidify the film. The flowable film can be formed using a higher order silane and plasma. A UV cure, or other cure, can be used to solidify the flowable film or the Si—X film.