公开(公告)号：US11174551B2

公开(公告)日：2021-11-16

申请号：US15615790

申请日：2017-06-06

Applicant: Applied Materials, Inc.

Inventor： Kelvin Chan ,  Yihong Chen

IPC: C23C16/06 ,  C23C16/455 ,  C23C16/08 ,  C23C16/02 ,  C23C16/42

Abstract: Methods for forming a nucleation layer on a substrate. In some embodiments, the processing method comprises sequential exposure to a first reactive gas comprising a metal precursor and a second reactive gas comprising a halogenated silane to form a nucleation layer on the surface of the substrate.

公开(公告)号：US10854511B2

公开(公告)日：2020-12-01

申请号：US16000431

申请日：2018-06-05

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Yong Wu ,  Chia Cheng Chin ,  Xinliang Lu ,  Srinivas Gandikota ,  Ziqing Duan ,  Abhijit Basu Mallick

IPC: H01L21/336 ,  H01L21/768 ,  H01L21/28 ,  H01L21/763 ,  H01L27/11556 ,  H01L27/11582 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/285 ,  G11C8/14

Abstract: Methods for forming 3D-NAND devices comprising recessing a poly-Si layer to a depth below a spaced oxide layer. A liner is formed on the spaced oxide layer and not on the recessed poly-Si layer. A metal layer is deposited in the gaps on the liner to form wordlines.

公开(公告)号：US10790141B2

公开(公告)日：2020-09-29

申请号：US15755428

申请日：2016-09-15

Applicant: Applied Materials, Inc.

Inventor： Kelvin Chan ,  Yihong Chen ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/34 ,  H01L21/285 ,  H01L21/306 ,  H01L21/768 ,  C23C16/455 ,  H01L21/32

Abstract: Methods for selectively depositing films by atomic layer deposition are disclosed. Substrate surfaces are passivated by hydrosilylation to prevent deposition and allow selective deposition on unpassivated surfaces.

公开(公告)号：US10559465B2

公开(公告)日：2020-02-11

申请号：US15988771

申请日：2018-05-24

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Yi Yang ,  Yihong Chen ,  Karthik Janakiraman ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  H01L21/205 ,  H01L21/033 ,  H01L21/3205 ,  H01L21/308 ,  H01L21/311

Abstract: In one implementation, a method of forming an amorphous silicon layer on a substrate in a processing chamber is provided. The method comprises depositing a predetermined thickness of a sacrificial dielectric layer over a substrate. The method further comprises forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate. The method further comprises performing a plasma treatment to the patterned features. The method further comprises depositing an amorphous silicon layer on the patterned features and the exposed upper surface of the substrate. The method further comprises selectively removing the amorphous silicon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers formed from the amorphous silicon layer.

公开(公告)号：US10319604B2

公开(公告)日：2019-06-11

申请号：US15805764

申请日：2017-11-07

Applicant: Applied Materials, Inc.

Inventor： Ziqing Duan ,  Yihong Chen ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/00 ,  H01L21/321 ,  H01L21/311 ,  H01L21/3205 ,  H01L21/02 ,  H01L21/285 ,  H01L21/3213

Abstract: Processing methods comprising depositing a film on a substrate surface and in a surface feature with chemical planarization to remove the film from the substrate surface, leaving the film in the feature. A pillar is grown from the film so that the pillar grows orthogonally to the substrate surface.

公开(公告)号：US20180350606A1

公开(公告)日：2018-12-06

申请号：US16000431

申请日：2018-06-05

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Yong Wu ,  Chia Cheng Chin ,  Xinliang Lu ,  Srinivas Gandikota ,  Ziqing Duan ,  Abhijit Basu Mallick

IPC: H01L21/28 ,  H01L21/763 ,  H01L21/768

Abstract: Methods for forming 3D-NAND devices comprising recessing a poly-Si layer to a depth below a spaced oxide layer. A liner is formed on the spaced oxide layer and not on the recessed poly-Si layer. A metal layer is deposited in the gaps on the liner to form wordlines.

公开(公告)号：US20180247821A1

公开(公告)日：2018-08-30

申请号：US15961363

申请日：2018-04-24

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Yong Wu ,  Chia Cheng Chin ,  Srinivas Gandikota

IPC: H01L21/285 ,  H01L21/02

CPC classification number: H01L21/28568 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

Abstract: Methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer.

公开(公告)号：US20180130671A1

公开(公告)日：2018-05-10

申请号：US15805764

申请日：2017-11-07

Applicant: Applied Materials, Inc.

Inventor： Ziqing Duan ,  Yihong Chen ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/321 ,  H01L21/311 ,  H01L21/285 ,  H01L21/02 ,  H01L21/3205

CPC classification number: H01L21/32115 ,  H01L21/02175 ,  H01L21/02244 ,  H01L21/28568 ,  H01L21/31111 ,  H01L21/32051 ,  H01L21/32136

Abstract: Processing methods comprising depositing a film on a substrate surface and in a surface feature with chemical planarization to remove the film from the substrate surface, leaving the film in the feature. A pillar is grown from the film so that the pillar grows orthogonally to the substrate surface.

公开(公告)号：US11244824B2

公开(公告)日：2022-02-08

申请号：US16754619

申请日：2018-10-09

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Yihong Chen ,  Yong Wu ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/02 ,  H01L21/285

Abstract: Methods for depositing a metal film on a doped amorphous silicon layer as a nucleation layer and/or a glue layer on a substrate. Some embodiments further comprise the incorporation of a glue layer to increase the ability of the doped amorphous silicon layer and metal layer to stick to the substrate.

公开(公告)号：US11043386B2

公开(公告)日：2021-06-22

申请号：US15959972

申请日：2018-04-23

Applicant: Applied Materials, Inc.

Inventor： Kelvin Chan ,  Yihong Chen ,  Jared Ahmad Lee ,  Kevin Griffin ,  Srinivas Gandikota ,  Joseph Yudovsky ,  Mandyam Sriram

IPC: H01L21/285 ,  H01L21/3205 ,  C23C16/06 ,  C23C16/455 ,  H01L21/28 ,  C23C16/14 ,  C23C16/452 ,  C23C16/458 ,  H01L21/768

Abstract: Methods of depositing a film by atomic layer deposition are described. The methods comprise exposing a substrate surface to a first process condition comprising a first reactive gas and a second reactive gas and exposing the substrate surface to a second process condition comprising the second reactive gas. The first process condition comprises less than a full amount of the second reactive gas for a CVD process.