公开(公告)号：US11646226B2

公开(公告)日：2023-05-09

申请号：US16871400

申请日：2020-05-11

Applicant: Applied Materials, Inc.

Inventor： Wenyi Liu ,  Wei Tang ,  Srinivas Gandikota ,  Yixiong Yang ,  Yong Wu ,  Jianqiu Guo ,  Arkaprava Dan ,  Mandyam Sriram

IPC: H01L21/768 ,  H01L21/285

CPC classification number: H01L21/76843 ,  H01L21/28556 ,  H01L21/28568

Abstract: A method for forming a metal nitride layer on a substrate includes exposing a substrate having features formed therein to a first deposition gas mixture including metal source material in a processing chamber to deposit metal source material in the features, supplying a first purge gas mixture into the processing chamber to remove excess metal source material and reaction byproducts from the processing chamber, exposing the substrate to a second deposition gas mixture including a nitride source compound in the processing chamber to form no more than one monolayer of metal nitride, supplying a second purge gas mixture into the processing chamber to remove excess nitride source compound and reaction byproducts from the processing chamber, and exposing the substrate to plasma using a microwave plasma source.

公开(公告)号：US10854511B2

公开(公告)日：2020-12-01

申请号：US16000431

申请日：2018-06-05

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Yong Wu ,  Chia Cheng Chin ,  Xinliang Lu ,  Srinivas Gandikota ,  Ziqing Duan ,  Abhijit Basu Mallick

IPC: H01L21/336 ,  H01L21/768 ,  H01L21/28 ,  H01L21/763 ,  H01L27/11556 ,  H01L27/11582 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/285 ,  G11C8/14

Abstract: Methods for forming 3D-NAND devices comprising recessing a poly-Si layer to a depth below a spaced oxide layer. A liner is formed on the spaced oxide layer and not on the recessed poly-Si layer. A metal layer is deposited in the gaps on the liner to form wordlines.

公开(公告)号：US20200040448A1

公开(公告)日：2020-02-06

申请号：US16597526

申请日：2019-10-09

Applicant: Applied Materials, Inc.

Inventor： Yong Wu ,  Srinivas Gandikota ,  Abhijit Basu Mallick

IPC: C23C16/14 ,  C23C16/455 ,  H01L21/285

Abstract: A method of forming conformal amorphous metal films is disclosed. A method of forming crystalline metal films with a predetermined orientation is also disclosed. An amorphous nucleation layer is formed on a substrate surface. An amorphous metal layer is formed from the nucleation layer by atomic substitution. A crystalline metal layer is deposited on the amorphous metal layer by atomic layer deposition.

公开(公告)号：US20190271071A1

公开(公告)日：2019-09-05

申请号：US16123437

申请日：2018-09-06

Applicant: Applied Materials, Inc.

Inventor： Yong Wu ,  Srinivas Gandikota ,  Abhijit Basu Mallick

IPC: C23C16/14 ,  H01L21/285 ,  C23C16/455

Abstract: A method of forming conformal amorphous metal films is disclosed. A method of forming crystalline metal films with a predetermined orientation is also disclosed. An amorphous nucleation layer is formed on a substrate surface. An amorphous metal layer is formed from the nucleation layer by atomic substitution. A crystalline metal layer is deposited on the amorphous metal layer by atomic layer deposition.

公开(公告)号：US20180350606A1

公开(公告)日：2018-12-06

申请号：US16000431

申请日：2018-06-05

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Yong Wu ,  Chia Cheng Chin ,  Xinliang Lu ,  Srinivas Gandikota ,  Ziqing Duan ,  Abhijit Basu Mallick

IPC: H01L21/28 ,  H01L21/763 ,  H01L21/768

Abstract: Methods for forming 3D-NAND devices comprising recessing a poly-Si layer to a depth below a spaced oxide layer. A liner is formed on the spaced oxide layer and not on the recessed poly-Si layer. A metal layer is deposited in the gaps on the liner to form wordlines.

公开(公告)号：US20180247821A1

公开(公告)日：2018-08-30

申请号：US15961363

申请日：2018-04-24

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Yong Wu ,  Chia Cheng Chin ,  Srinivas Gandikota

IPC: H01L21/285 ,  H01L21/02

CPC classification number: H01L21/28568 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

Abstract: Methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer.

公开(公告)号：US11621226B2

公开(公告)日：2023-04-04

申请号：US17171432

申请日：2021-02-09

Applicant: Applied Materials, Inc.

Inventor： Yong Wu ,  Srinivas Gandikota ,  Abhijit Basu Mallick ,  Srinivas D. Nemani

IPC: H01L23/532 ,  H01L21/285 ,  H01L21/768 ,  H01L21/3205 ,  C23C16/455 ,  C23C16/26 ,  H10B69/00 ,  H01L27/115

Abstract: A graphene barrier layer is disclosed. Some embodiments relate to a graphene barrier layer capable of preventing diffusion from a fill layer into a substrate surface and/or vice versa. Some embodiments relate to a graphene barrier layer that prevents diffusion of fluorine from a tungsten layer into the underlying substrate. Additional embodiments relate to electronic devices which contain a graphene barrier layer.

公开(公告)号：US11476267B2

公开(公告)日：2022-10-18

申请号：US16876280

申请日：2020-05-18

Applicant: Applied Materials, Inc.

Inventor： Jacqueline S. Wrench ,  Yixiong Yang ,  Yong Wu ,  Wei V. Tang ,  Srinivas Gandikota ,  Yongjing Lin ,  Karla M Bernal Ramos ,  Shih Chung Chen

IPC: H01L21/285 ,  H01L21/28 ,  H01L21/311 ,  H01L27/11556 ,  H01L21/67 ,  C23C16/06 ,  C23C16/50 ,  C23C16/455 ,  H01L29/423

Abstract: Methods of forming memory structures are discussed. Specifically, methods of forming 3D NAND devices are discussed. Some embodiments form memory structures with a metal nitride barrier layer, an α-tungsten layer, and a bulk metal material. The barrier layer comprises a TiXN or TaXN material, where X comprises a metal selected from one or more of aluminum (Al), silicon (Si), tungsten (W), lanthanum (La), yttrium (Yt), strontium (Sr), or magnesium (Mg).

公开(公告)号：US11244824B2

公开(公告)日：2022-02-08

申请号：US16754619

申请日：2018-10-09

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Yihong Chen ,  Yong Wu ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/02 ,  H01L21/285

Abstract: Methods for depositing a metal film on a doped amorphous silicon layer as a nucleation layer and/or a glue layer on a substrate. Some embodiments further comprise the incorporation of a glue layer to increase the ability of the doped amorphous silicon layer and metal layer to stick to the substrate.

公开(公告)号：US10930493B2

公开(公告)日：2021-02-23

申请号：US16596647

申请日：2019-10-08

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Yong Wu ,  Srinivas Gandikota

IPC: H01L21/02 ,  H01L21/324

Abstract: Embodiments described herein generally relate to methods of depositing thin films and, more particularly, to depositing metal thin films. The methods herein provide a nucleation free conversion (NFC) approach which involves forming an amorphous silicon layer over the dielectric layer, and performing an NFC process which acts to convert the amorphous silicon layer into a thin metal film. In some embodiments, the NFC process is performed multiple times until the resulting thin metal film is continuous. A bulk metal is formed over the thin metal film.