公开(公告)号：US08497308B2

公开(公告)日：2013-07-30

申请号：US12439872

申请日：2007-09-05

Applicant: Anna Lee Y. Tonkovich ,  Robert D. Litt ,  Timothy M. Werner ,  Bin Yang

Inventor： Anna Lee Y. Tonkovich ,  Robert D. Litt ,  Timothy M. Werner ,  Bin Yang

IPC: C07C27/00

CPC classification number: B01J19/0093 ,  B01J19/1831 ,  B01J2219/00783 ,  B01J2219/00835 ,  B01J2219/00873 ,  B01J2219/00984 ,  C07C29/152 ,  C10G2/341 ,  C07C31/04

Abstract: A process for carrying out at least two unit operations in series, the process comprising the step of: (a) directing a feed stream into an integrated assembly which comprises a first microchannel unit operation upon at least one chemical of the feed stream to generate a distributed output stream that exits the first microchannel unit operation in a first set of discrete microchannels isolating flow through the discrete microchannels; and (b) directing the distributed output stream of the first microchannel unit operation into a second microchannel unit operation as a distributed input stream, to continue isolating flow between the first set of discrete microchannels, and conducting at least one operation upon at least one chemical of the input stream to generate a product stream that exits the second microchannel unit operation, where the first microchannel unit operation and the second unit operation share a housing.

Abstract translation: 一种用于串联进行至少两个单元操作的方法，该方法包括以下步骤：（a）将进料流引导到集成组件中，其包括在进料流的至少一种化学品上的第一微通道单元操作以产生 在第一组离散微通道中离开第一微通道单元操作的分布式输出流，其隔离通过离散微通道的流动; 和（b）将第一微通道单元操作的分布式输出流引导到作为分布式输入流的第二微通道单元操作中，以继续隔离第一组离散微通道之间的流动，并且至少一种化学物质进行至少一种操作 以产生离开第二微通道单元操作的产品流，其中第一微通道单元操作和第二单元操作共享外壳。

公开(公告)号：US08492275B2

公开(公告)日：2013-07-23

申请号：US13186519

申请日：2011-07-20

Applicant: Emre Alptekin ,  Viraj Y. Sardesai ,  Cung D. Tran ,  Bin Yang

Inventor： Emre Alptekin ,  Viraj Y. Sardesai ,  Cung D. Tran ,  Bin Yang

IPC: H01L21/44

CPC classification number: H01L23/485 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26566 ,  H01L21/2658 ,  H01L21/26586 ,  H01L21/28518 ,  H01L21/76814 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods form an integrated circuit structure by forming at least a portion of a plurality of devices within and/or on a substrate and patterning trenches in an inter-layer dielectric layer on the substrate adjacent the devices. The patterning forms relatively narrow trenches and relatively wide trenches. The methods then perform an angled implant of a compensating material into the trenches. The angle of the angled implant implants a greater concentration of the compensating material in the regions of the substrate at the bottom of the wider trenches relative to an amount of compensating material implanted in the regions of the substrate at the bottom of the narrower trenches. The methods then deposit a metallic material within the trenches and heat the metallic material to form silicide from the metallic material.

Abstract translation: 方法通过在衬底内和/或衬底上形成多个器件的至少一部分形成集成电路结构，并且在邻近器件的衬底上的层间电介质层中图案化沟槽。 图案形成相对较窄的沟槽和较宽的沟槽。 然后，所述方法对沟槽进行补偿材料的成角度注入。 成角度的植入物的角度相对于在较窄沟槽的底部注入衬底的区域中的补偿材料的量，在较宽沟槽底部的衬底区域中植入更大浓度的补偿材料。 然后，该方法将金属材料沉积在沟槽内，并加热金属材料以从金属材料形成硅化物。

公开(公告)号：US08461170B2

公开(公告)日：2013-06-11

申请号：US13196189

申请日：2011-08-02

Applicant: Brian Aquila ,  Victor Kamhi ,  Bo Peng ,  Timothy Pontz ,  Jamal Carlos Saeh ,  Kumar Thakur ,  Bin Yang

Inventor： Brian Aquila ,  Victor Kamhi ,  Bo Peng ,  Timothy Pontz ,  Jamal Carlos Saeh ,  Kumar Thakur ,  Bin Yang

IPC: A01N43/54 ,  A61K31/505

CPC classification number: C07D401/14 ,  C07F9/65685

Abstract: The present invention relates to compounds of Formula (I) and/or Formula (Ia): and to their salts, pharmaceutical compositions, methods of use, and methods for their preparation. These compounds inhibit ALK kinase activity, and thus may be used for the treatment of cancer.

Abstract translation: 本发明涉及式（I）和/或式（Ia）化合物及其盐，药物组合物，使用方法及其制备方法。 这些化合物抑制ALK激酶活性，因此可用于治疗癌症。

公开(公告)号：US20130069124A1

公开(公告)日：2013-03-21

申请号：US13237732

申请日：2011-09-20

Applicant: Bin Yang ,  Christian Lavoie ,  Emre Alptekin ,  Ahmet S. Ozcan ,  Cung D. Tran ,  Mark Raymond

Inventor： Bin Yang ,  Christian Lavoie ,  Emre Alptekin ,  Ahmet S. Ozcan ,  Cung D. Tran ,  Mark Raymond

IPC: H01L29/78 ,  H01L21/20

CPC classification number: H01L29/665 ,  H01L21/28518 ,  H01L29/6659 ,  H01L29/7833

Abstract: An MOSFET device having a Silicide layer of uniform thickness, and methods for its fabrication, are provided. One such method involves depositing a metal layer over wide and narrow contact trenches on the surface of a silicon semiconductor substrate. Upon formation of a uniformly thin amorphous intermixed alloy layer at the metal/silicon interface, the excess (unreacted) metal is removed. The device is annealed to facilitate the formation of a thin silicide layer on the substrate surface which exhibits uniform thickness at the bottoms of both wide and narrow contact trenches.

Abstract translation: 提供具有均匀厚度的硅化物层的MOSFET器件及其制造方法。 一种这样的方法包括在硅半导体衬底的表面上的宽且窄的接触沟槽上沉积金属层。 在金属/硅界面处形成均匀薄的无定形混合合金层时，除去过量的（未反应的）金属。 该器件被退火以促进在衬底表面上形成薄的硅化物层，其在宽和窄接触沟槽的底部显示均匀的厚度。

公开(公告)号：US08349716B2

公开(公告)日：2013-01-08

申请号：US12911186

申请日：2010-10-25

Applicant: Ming Cai ,  Christian Lavoie ,  Ahmet S. Ozcan ,  Bin Yang ,  Zhen Zhang

Inventor： Ming Cai ,  Christian Lavoie ,  Ahmet S. Ozcan ,  Bin Yang ,  Zhen Zhang

IPC: H01L21/336 ,  H01L21/04

CPC classification number: H01L21/2257 ,  H01L21/28512 ,  H01L21/28518 ,  H01L29/665 ,  H01L29/66643

Abstract: Disclosed is a semiconductor device having a p-n junction with reduced junction leakage in the presence of metal silicide defects that extend to the junction and a method of forming the device. Specifically, a semiconductor layer having a p-n junction is formed. A metal silicide layer is formed on the semiconductor layer and a dopant is implanted into the metal silicide layer. An anneal process is performed causing the dopant to migrate toward the metal silicide-semiconductor layer interface such that the peak concentration of the dopant will be within a portion of the metal silicide layer bordering the metal silicide-semiconductor layer interface and encompassing the defects. As a result, the silicide to silicon contact is effectively engineered to increase the Schottky barrier height at the defect, which in turn drastically reduces any leakage that would otherwise occur, when the p-n junction is in reverse polarity.

Abstract translation: 公开了一种具有p-n结的半导体器件，其在存在延伸到结的金属硅化物缺陷的情况下具有减少的结漏电以及形成器件的方法。 具体地说，形成具有p-n结的半导体层。 在半导体层上形成金属硅化物层，并且将掺杂剂注入到金属硅化物层中。 执行退火处理，使掺杂剂朝向金属硅化物半导体层界面迁移，使得掺杂剂的峰值浓度将在金属硅化物层的与金属硅化物半导体层界面接壤并包围缺陷的部分内。 结果，硅化物与硅接触被有效地设计以增加缺陷处的肖特基势垒高度，这反过来大大降低了当p-n结处于相反极性时将会发生的任何泄漏。

公开(公告)号：US20120298965A1

公开(公告)日：2012-11-29

申请号：US13568839

申请日：2012-08-07

Applicant: Wilfried Haensch ,  Christian Lavoie ,  Christine Qiqing Ouyang ,  Xiaoyan Shao ,  Paul M. Solomon ,  Zhen Zhang ,  Bin Yang

Inventor： Wilfried Haensch ,  Christian Lavoie ,  Christine Qiqing Ouyang ,  Xiaoyan Shao ,  Paul M. Solomon ,  Zhen Zhang ,  Bin Yang

IPC: H01L29/772 ,  B82Y99/00

CPC classification number: H01L29/0673 ,  H01L21/823814 ,  H01L29/41791

Abstract: A multigate structure which comprises a semiconductor substrate; an ultra-thin silicon or carbon bodies of less than 20 nanometers thick located on the substrate; an electrolessly deposited metallic layer selectively located on the side surfaces and top surfaces of the ultra-thin silicon or carbon bodies and selectively located on top of the multigate structures to make electrical contact with the ultra-thin silicon or carbon bodies and to minimize parasitic resistance, and wherein the ultra-thin silicon or carbon bodies and metallic layer located thereon form source and drain regions is provided along with a process to fabricate the structure.

Abstract translation: 一种多栅格结构，包括半导体衬底; 位于基板上的小于20纳米厚的超薄硅或碳体; 选择性地位于超薄硅或碳体的侧表面和顶表面上的无电沉积金属层，并且选择性地位于多结构结构的顶部上以与超薄硅或碳体电接触并最小化寄生电阻 并且其中位于其上的超薄硅或碳体和金属层形成源区和漏区以及制造该结构的工艺。

公开(公告)号：US20120132989A1

公开(公告)日：2012-05-31

申请号：US12955388

申请日：2010-11-29

Applicant: Wilfried Haensch ,  Christian Lavoie ,  Christine Qiqing Ouyang ,  Xiaoyan Shao ,  Paul M. Solomon ,  Zhen Zhang ,  Bin Yang

Inventor： Wilfried Haensch ,  Christian Lavoie ,  Christine Qiqing Ouyang ,  Xiaoyan Shao ,  Paul M. Solomon ,  Zhen Zhang ,  Bin Yang

IPC: H01L27/12 ,  H01L21/84

CPC classification number: H01L29/0673 ,  H01L21/823814 ,  H01L29/41791

Abstract: A multigate structure which comprises a semiconductor substrate; an ultra-thin silicon or carbon bodies of less than 20 nanometers thick located on the substrate; an electrolessly deposited metallic layer selectively located on the side surfaces and top surfaces of the ultra-thin silicon or carbon bodies and selectively located on top of the multigate structures to make electrical contact with the ultra-thin silicon or carbon bodies and to minimize parasitic resistance, and wherein the ultra-thin silicon or carbon bodies and metallic layer located thereon form source and drain regions is provided along with a process to fabricate the structure.

公开(公告)号：US08183220B2

公开(公告)日：2012-05-22

申请号：US12577900

申请日：2009-10-13

Applicant: Jixing Liu ,  Bin Yang ,  Xi Lan ,  Xiangping Yin ,  Yinmei Bai ,  Xiaorong Han ,  Xuerui Li ,  Baoyu Li ,  Yuping Fang ,  Zhiyong Li

Inventor： Jixing Liu ,  Bin Yang ,  Xi Lan ,  Xiangping Yin ,  Yinmei Bai ,  Xiaorong Han ,  Xuerui Li ,  Baoyu Li ,  Yuping Fang ,  Zhiyong Li

IPC: A61K48/00 ,  C12N15/113 ,  C12N15/42 ,  C12N15/85

CPC classification number: A61K39/135 ,  A61K39/12 ,  A61K2039/5258 ,  A61K2039/53 ,  A61K2039/552 ,  C12N15/1131 ,  C12N2310/11 ,  C12N2310/111 ,  C12N2770/32134 ,  C12N2830/20 ,  C12N2840/203

Abstract: A double-effective vaccine vector against foot-and-mouth disease virus having a bicistronic expression vector sequence, the bicistronic expression vector sequence is an antisense gene sequence capable of conjugating with 5′ UTR of RNA of the foot-and-mouth disease virus genome and an intact sequence of VP1 structural protein gene of the foot-and-mouth disease virus. Animal experiments show that the vaccine vector provides double effects in terms of gene therapy and gene immunization for the prevention and treatment of foot-and-mouth disease in animals. Also provided are construction methods and methods of use of the vaccine vector.

Abstract translation: 双顺反子表达载体序列是一种双重有效的口蹄疫病毒疫苗载体，双顺反子表达载体序列是能够与口蹄疫病毒基因组RNA的5'UTR共轭的反义基因序列 和口蹄疫病毒的VP1结构蛋白基因的完整序列。 动物实验表明疫苗载体在基因治疗和基因免疫方面提供了双重效果，用于预防和治疗动物口蹄疫。 还提供了疫苗载体的构建方法和使用方法。

公开(公告)号：US20120122783A1

公开(公告)日：2012-05-17

申请号：US12739342

申请日：2008-10-23

Applicant: Richard D. Dimarchi ,  Bin Yang

Inventor： Richard D. Dimarchi ,  Bin Yang

IPC: A61K38/26 ,  A61P3/10 ,  C07K14/605

CPC classification number: C07K14/605 ,  A61K38/00

Abstract: Glucagon antagonists are provided which comprise amino acid substitutions and/or chemical modifications to glucagon sequence. In one embodiment, the glucagon antagonists comprise a native glucagon peptide that has been modified by the deletion of the first two to five amino acid residues from the N-terminus and (i) an amino acid substitution at position 9 (according to the numbering of native glucagon) or (ii) substitution of the Phe at position 6 (according to the numbering of native glucagon) with phenyl lactic acid (PLA). In another embodiment, the glucagon antagonists comprise the structure A-B-C as described herein, wherein A is PLA, an oxy derivative thereof, or a peptide of 2-6 amino acids in which two consecutive amino acids of the peptide are linked via an ester or ether bond.

Abstract translation: 提供了包含对胰高血糖素序列的氨基酸取代和/或化学修饰的胰高血糖素拮抗剂。 在一个实施方案中，胰高血糖素拮抗剂包含通过从N-末端缺失前两个至五个氨基酸残基而修饰的天然胰高血糖素肽，以及（i）在第9位的氨基酸取代（根据 天然胰高血糖素）或（ii）用苯基乳酸（PLA）取代第6位的Phe（根据天然胰高血糖素的编号）。 在另一个实施方案中，胰高血糖素拮抗剂包含如本文所述的结构ABC，其中A是PLA，其氧衍生物或2-6个氨基酸的肽，其中肽的两个连续氨基酸经由酯或醚连接 键。

公开(公告)号：US20120098042A1

公开(公告)日：2012-04-26

申请号：US12911186

申请日：2010-10-25

Applicant: Ming Cai ,  Christian Lavoie ,  Ahmet S. Ozcan ,  Bin Yang ,  Zhen Zhang

Inventor： Ming Cai ,  Christian Lavoie ,  Ahmet S. Ozcan ,  Bin Yang ,  Zhen Zhang

IPC: H01L29/78 ,  H01L21/336 ,  H01L21/04

CPC classification number: H01L21/2257 ,  H01L21/28512 ,  H01L21/28518 ,  H01L29/665 ,  H01L29/66643

Abstract: Disclosed is a semiconductor device having a p-n junction with reduced junction leakage in the presence of metal silicide defects that extend to the junction and a method of forming the device. Specifically, a semiconductor layer having a p-n junction is formed. A metal silicide layer is formed on the semiconductor layer and a dopant is implanted into the metal silicide layer. An anneal process is performed causing the dopant to migrate toward the metal silicide-semiconductor layer interface such that the peak concentration of the dopant will be within a portion of the metal silicide layer bordering the metal silicide-semiconductor layer interface and encompassing the defects. As a result, the silicide to silicon contact is effectively engineered to increase the Schottky barrier height at the defect, which in turn drastically reduces any leakage that would otherwise occur, when the p-n junction is in reverse polarity.

Abstract translation: 公开了一种具有p-n结的半导体器件，其在存在延伸到结的金属硅化物缺陷的情况下具有减少的结漏电以及形成器件的方法。 具体地说，形成具有p-n结的半导体层。 在半导体层上形成金属硅化物层，并且将掺杂剂注入到金属硅化物层中。 执行退火处理，使掺杂剂朝向金属硅化物半导体层界面迁移，使得掺杂剂的峰值浓度将在金属硅化物层的与金属硅化物半导体层界面接壤并包围缺陷的部分内。 结果，硅化物与硅接触被有效地设计以增加缺陷处的肖特基势垒高度，这反过来大大降低了当p-n结处于相反极性时将会发生的任何泄漏。