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    Electromechanical memory array using nanotube ribbons and method for making same
    21.
    发明授权
    Electromechanical memory array using nanotube ribbons and method for making same 有权
    使用纳米管带的机电存储器阵列及其制造方法

    公开(公告)号：US07298016B2

    公开(公告)日：2007-11-20

    申请号：US10852880

    申请日：2004-05-25

    申请人： Brent M. Segal ,  Darren K. Brock ,  Thomas Rueckes

    发明人： Brent M. Segal ,  Darren K. Brock ,  Thomas Rueckes

    IPC分类号： H01L29/84 ,  B81B3/00

    CPC分类号： G11C23/00 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/16 ,  G11C2213/81 ,  H01H1/0094 ,  H01L21/76838 ,  H01L27/10 ,  Y10S977/724 ,  Y10S977/742 ,  Y10S977/796 ,  Y10S977/856 ,  Y10S977/888 ,  Y10S977/943 ,  Y10T428/24893 ,  Y10T428/24917

    摘要： Electromechanical circuits, such as memory cells, and methods for making same are disclosed. The circuits include a structure having electrically conductive traces and supports extending from a surface of the substrate, and nanotube ribbons suspended by the supports that cross the electrically conductive traces, wherein each ribbon comprises one or more nanotubes. The electro-mechanical circuit elements are made by providing a structure having electrically conductive traces and supports, in which the supports extend from a surface of the substrate. A layer of nanotubes is provided over the supports, and portions of the layer of nanotubes are selectively removed to form ribbons of nanotubes that cross the electrically conductive traces. Each ribbon includes one or more nanotubes.

    摘要翻译： 公开了诸如存储单元的机电电路及其制造方法。 这些电路包括具有导电迹线和从衬底表面延伸的支撑体的结构，以及由支撑体悬挂的穿过导电迹线的纳米管带，其中每个带包括一个或多个纳米管。 电 - 机械电路元件通过提供具有导电迹线和支撑件的结构来制造，其中支撑件从基板的表面延伸。 在载体上提供一层纳米管，并且选择性地去除纳米管层的部分以形成穿过导电迹线的纳米管带。 每个带包括一个或多个纳米管。

    Four terminal non-volatile transistor device
    23.
    发明授权
    Four terminal non-volatile transistor device 有权
    四端子非易失性晶体管器件

    公开(公告)号：US07075141B2

    公开(公告)日：2006-07-11

    申请号：US10811191

    申请日：2004-03-26

    申请人： Thomas Rueckes ,  Brent M. Segal ,  Bernard Vogeli ,  Darren K. Brock ,  Venkatachalam C. Jaiprakash ,  Claude L. Bertin

    发明人： Thomas Rueckes ,  Brent M. Segal ,  Bernard Vogeli ,  Darren K. Brock ,  Venkatachalam C. Jaiprakash ,  Claude L. Bertin

    IPC分类号： H01L27/10 ,  H01L29/788

    CPC分类号： G11C23/00 ,  B82Y10/00 ,  G11C13/025 ,  G11C16/0416 ,  G11C2213/17 ,  H01L27/115 ,  H01L29/7881 ,  Y10S977/708 ,  Y10S977/932

    摘要： A four terminal non-volatile transistor device. A non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and each in electrical communication with a respective terminal. A channel region of a second semiconductor type of material is disposed between the source and drain region. A floating gate structure is made of at least one of semiconductive or conductive material and is disposed over the channel region. A control gate is made of at least one of semiconductive or conductive material and is in electrical communication with a respective terminal. An electromechanically-deflectable nanotube switching element is in electrical communication with one of the floating gate structure and the control gate structure, and is positioned to be electromechanically deflectable into contact with the other of the floating gate structure and the control gate structure. When the nanotube switching element is in communication with both the control gate and the floating gate, the control gate may be used to modulate the conductivity of the channel region. The nanotube switching element may be formed from a porous fabric of a monolayer of single-walled carbon nanotubes. Under certain embodiments, the nanotube article is suspended vertically in relation to the horizontal substrate. Under certain embodiments, a release gate and release node are positioned in spaced relation to the nanotube switching element, and, in response to a signal on the release node, the release gate electromechanically deflects the nanotube switching element out of contact with the one of the control gate and floating gate. Under certain embodiments, the contact between the nanotube switching element and the one of the control gate and floating gate is a non-volatile state. Under certain embodiments, the device occupies an area of 8F2.

    摘要翻译： 四端非易失性晶体管器件。 非挥发性晶体管器件包括第一半导体类型的材料的源极区域和漏极区域，并且各自与相应的端子电连通。 第二半导体类型的材料的沟道区域设置在源区和漏区之间。 浮栅结构由半导体或导电材料中的至少一种制成，并且设置在沟道区域上。 控制门由半导体或导电材料中的至少一种制成，并与相应的端子电连通。 机电可偏转的纳米管开关元件与浮动栅极结构和控制栅极结构中的一个电连通，并且被定位成机电可偏转地与浮动栅极结构和控制栅极结构中的另一个接触。 当纳米管开关元件与控制栅极和浮置栅极两者连通时，控制栅极可用于调制沟道区的导电性。 纳米管切换元件可以由单壁碳纳米管单层的多孔织物形成。 在某些实施例中，纳米管制品相对于水平基底垂直悬挂。 在某些实施例中，释放栅极和释放节点以与纳米管开关元件隔开的关系定位，并且响应于释放节点上的信号，释放门电磁机械地使纳米管开关元件偏转与 控制门和浮动门。 在某些实施例中，纳米管开关元件与控制栅极和浮置栅极之间的接触是非易失性状态。 在某些实施例中，该装置占据8F 2的面积。

    Methods of making electromechanical three-trace junction devices
    25.
    发明授权
    Methods of making electromechanical three-trace junction devices 有权
    制造机电三迹结装置的方法

    公开(公告)号：US06784028B2

    公开(公告)日：2004-08-31

    申请号：US10033032

    申请日：2001-12-28

    申请人： Thomas Rueckes ,  Brent M. Segal ,  Darren K. Brock

    发明人： Thomas Rueckes ,  Brent M. Segal ,  Darren K. Brock

    IPC分类号： H01L2182

    CPC分类号： H01L21/76838 ,  B81C1/00142 ,  B81C2201/019 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00 ,  G11C2213/16 ,  G11C2213/81 ,  H01H1/0094 ,  Y10S977/734

    摘要： Methods of producing an electromechanical circuit element are described. A lower structure having lower support structures and a lower electrically conductive element is provided. A nanotube ribbon (or other electromechanically responsive element) is formed on an upper surface of the lower structure so as to contact the lower support structures. An upper structure is provided over the nanotube ribbon. The upper structure includes upper support structures and an upper electrically conductive element. In some arrangements, the upper and lower electrically conductive elements are in vertical alignment, but in some arrangements they are not.

    摘要翻译： 描述制造机电电路元件的方法。 提供具有较低支撑结构和较低导电元件的下部结构。 纳米管带（或其他机电响应元件）形成在下结构的上表面上以便接触下支撑结构。 在纳米管带上提供上部结构。 上部结构包括上部支撑结构和上部导电元件。 在一些布置中，上和下导电元件是垂直对准的，但在某些布置中它们不是。

    Methods of making electromechanical three-trace junction devices
    27.
    发明授权
    Methods of making electromechanical three-trace junction devices 有权
    制造机电三迹结装置的方法

    公开(公告)号：US07915066B2

    公开(公告)日：2011-03-29

    申请号：US12202737

    申请日：2008-09-02

    申请人： Thomas Rueckes ,  Brent M. Segal ,  Darren K. Brock

    发明人： Thomas Rueckes ,  Brent M. Segal ,  Darren K. Brock

    IPC分类号： H01L21/00

    CPC分类号： H01L21/76838 ,  B81C1/00142 ,  B81C2201/019 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00 ,  G11C2213/16 ,  G11C2213/81 ,  H01H1/0094 ,  Y10S977/734

    摘要： Methods of producing an electromechanical circuit element are described. A lower structure having lower support structures and a lower electrically conductive element is provided. A nanotube ribbon (or other electromechanically responsive element) is formed on an upper surface of the lower structure so as to contact the lower support structures. An upper structure is provided over the nanotube ribbon. The upper structure includes upper support structures and an upper electrically conductive element. In some arrangements, the upper and lower electrically conductive elements are in vertical alignment, but in some arrangements they are not.

    摘要翻译： 描述制造机电电路元件的方法。 提供具有较低支撑结构和较低导电元件的下部结构。 纳米管带（或其他机电响应元件）形成在下结构的上表面上以便接触下支撑结构。 在纳米管带上提供上部结构。 上部结构包括上部支撑结构和上部导电元件。 在一些布置中，上和下导电元件是垂直对准的，但在某些布置中它们不是。

    Electromechanical three-trace junction devices
    30.
    发明授权
    Electromechanical three-trace junction devices 有权
    机电三迹交界器件

    公开(公告)号：US06911682B2

    公开(公告)日：2005-06-28

    申请号：US10033323

    申请日：2001-12-28

    申请人： Thomas Rueckes ,  Brent M. Segal ,  Darren K. Brock

    发明人： Thomas Rueckes ,  Brent M. Segal ,  Darren K. Brock

    IPC分类号： H01L27/10 ,  B81B3/00 ,  G11C11/56 ,  G11C13/02 ,  G11C23/00 ,  H01H1/00 ,  H01H59/00 ,  B82B1/00

    CPC分类号： G11C23/00 ,  B82Y10/00 ,  G11C11/56 ,  G11C13/025 ,  G11C2213/77 ,  H01H1/0094 ,  Y10S977/932 ,  Y10T428/24917

    摘要： Three trace electromechanical circuits and methods of using same are described. A circuit includes first and second electrically conductive elements with a nanotube ribbon (or other electromechanical elements) disposed therebetween. The nanotube ribbon is movable toward at least one of the first and second electrically conductive elements in response to electrical stimulus applied to at least one of the first and second electrically conductive elements and the nanotube ribbon. Such circuits may be formed into arrays of cells. The upper and lower electrically conductive traces may be aligned or unaligned vertically. An electrical stimulus may be applied to at least one of the first and second electrically conductive elements and the nanotube ribbon to move the nanotube ribbon toward at least one of the first and second electrically conductive elements. Electrical signals from at least one the first and second electrically conductive elements and the nanotube ribbon may be sensed to determine the electrical state of the cell. The states may be assigned in a variety of ways. For example, if the ribbon is moved toward the first electrically conductive element, the electrical state is a first state; if the ribbon is moved toward the second electrically conductive element, the electrical state is a second state; and if the ribbon is between the first and second electrically conductive elements, the electrical state is a third state. The first, second, and third states each corresponds to a different information encoding. Or, electrical stimulus may be applied to both the first and second electrically conductive elements so that the first and second electrically conductive elements both cause the movement of the nanotube ribbon. Or, the first and second electrically conductive elements are used in a fault tolerant manner.

    摘要翻译： 描述了三种跟踪机电电路及其使用方法。 电路包括第一和第二导电元件，其间设置有纳米管带（或其他机电元件）。 响应于施加到第一和第二导电元件和纳米管带中的至少一个的电刺激，纳米管带可朝着第一和第二导电元件中的至少一个移动。 这样的电路可以形成为电池阵列。 上下导电迹线可以垂直对齐或不对齐。 可以将电刺激施加到第一和第二导电元件和纳米管带中的至少一个，以将纳米管带向第一和第二导电元件中的至少一个移动。 可以感测来自至少一个第一和第二导电元件和纳米管带的电信号以确定电池的电状态。 各州可以以各种方式分配。 例如，如果色带向第一导电元件移动，则电状态是第一状态; 如果色带朝向第二导电元件移动，则电状态是第二状态; 并且如果带位于第一和第二导电元件之间，则电状态是第三状态。 第一，第二和第三状态各自对应于不同的信息编码。 或者，可以将电刺激施加到第一和第二导电元件两者，使得第一和第二导电元件都引起纳米管带的移动。 或者，以容错方式使用第一和第二导电元件。