Abstract:
There is provided an image pickup apparatus which outputs a digital signal based on a comparison result signal that changes the signal value at Nth (where N is an integer of 1 or higher) among comparison result signals output by a plurality of comparators.
Abstract:
A photoelectric conversion device includes a plurality of unit pixels each including a charge holding portion to which charges are transferred from four or more photoelectric conversion units. Sensitivity of each photoelectric conversion unit of a first group to incident light is greater than sensitivity of each photoelectric conversion unit of a second group to the incident light. After charge accumulation is started in all the photoelectric conversion units of the second group, charge accumulation is started in the photoelectric conversion units of the first group. After signals corresponding to charges accumulated in all the photoelectric conversion units of the second group are read out, signals corresponding to charges accumulated in the photoelectric conversion units of the first group are read out.
Abstract:
A photoelectric conversion apparatus includes a pixel array having pixels arranged to form rows and columns and column signal lines configured to output noise signals and optical signals of the pixels, a driver configured to drive the pixels so that the optical signal is output following the noise signal from each pixel, A/D converters configured to perform A/D conversion to convert the noise signals output to the column signal lines into noise data and to subsequently perform A/D conversion to covert the optical signals output to the column signal lines into optical data, a data hold circuit, and a transmitter configured to transmit the noise data converted by the A/D converters to the data hold circuit and to subsequently transmit the optical data converted by the A/D converters to the data hold circuit.
Abstract:
An imaging device includes pixels, output lines on each column, an AD conversion unit including column AD conversion circuits connected to the output lines, a first storage unit including holding units connected to the column AD conversion circuits, a transfer unit that transfers signals in the first storage unit, a second storage unit that holds signals from the transfer unit, and an output unit that outputs signals in the second storage unit. The pixels output a first analog signal based on signal from the first photoelectric converter and a second analog signal based on signal from the first and second photoelectric converter. The AD conversion unit converts the first and second analog signals into first and second digital signals. The number of signals corresponding to the first digital signals of signals output by the output unit is less than the number of signals output in parallel from the output lines.
Abstract:
Provided is an imaging device including row drive unit having a first storage unit that stores and outputs a first signal for a readout from the pixels on an associated row, a second storage unit that stores and outputs a second signal for an operation for causing the photoelectric conversion element on an associated row to be reset to a charge accumulation state, and a third storage unit that stores and outputs a third signal for maintaining the photoelectric conversion element on an associated row in a charge accumulation state or a reset state based on the first signal output from the first storage unit and the second signal output from the second storage unit.
Abstract:
An imaging apparatus includes a scanning circuit configured to perform shutter scanning and readout scanning, a first control unit configured to control the capacitance setting unit to set a capacitance value of the input node in the readout scanning, and a second control unit configured to control the capacitance setting unit to set a capacitance value of the input node in the shutter scanning.
Abstract:
Provided is an imaging device including row drive unit having a first storage unit that stores and outputs a first signal for a readout from the pixels on an associated row, a second storage unit that stores and outputs a second signal for an operation for causing the photoelectric conversion element on an associated row to be reset to a charge accumulation state, and a third storage unit that stores and outputs a third signal for maintaining the photoelectric conversion element on an associated row in a charge accumulation state or a reset state based on the first signal output from the first storage unit and the second signal output from the second storage unit.
Abstract:
A solid-state image sensor, comprising a plurality of circuit groups each of which can assume an operating state and a non-operating state, a storage unit configured to store an order of switching the plurality of circuit groups from the non-operating state to the operating state, and a control unit configured to receive, from outside the sensor, a control signal, common to the plurality of circuit groups, for switching the plurality of circuit groups from the non-operating state to the operating state, wherein after receiving the control signal, the control unit sequentially switches, according to the order stored in the storage unit, the plurality of circuit groups from the non-operating state to the operating state at an interval of a period corresponding to an integer multiple of a cycle of a clock signal.
Abstract:
Provided is an imaging device including row drive unit having a first storage unit that stores and outputs a first signal for a readout from the pixels on an associated row, a second storage unit that stores and outputs a second signal for an operation for causing the photoelectric conversion element on an associated row to be reset to a charge accumulation state, and a third storage unit that stores and outputs a third signal for maintaining the photoelectric conversion element on an associated row in a charge accumulation state or a reset state based on the first signal output from the first storage unit and the second signal output from the second storage unit.
Abstract:
Periods in which first selection transistors of several pixel cells of a plurality of pixel cells are in an on state are overlapped, and periods in which second selection transistors of several other pixel cells of the plurality of pixel cells are in an on state are overlapped.