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    Method for fabricating semiconductor device with recess gate
    21.
    发明授权
    Method for fabricating semiconductor device with recess gate 失效
    用于制造具有凹槽的半导体器件的方法

    公开(公告)号：US07678676B2

    公开(公告)日：2010-03-16

    申请号：US12346811

    申请日：2008-12-30

    申请人： Hae-Jung Lee ,  Jae-Seon Yu ,  Jae-Kyun Lee ,  Sang-Rok Oh

    发明人： Hae-Jung Lee ,  Jae-Seon Yu ,  Jae-Kyun Lee ,  Sang-Rok Oh

    IPC分类号： H01L21/00

    CPC分类号： H01L21/823437 ,  H01L29/66621

    摘要： A method for fabricating a semiconductor device with a recess gate includes providing a substrate, forming an isolation layer over the substrate to define an active region, forming mask patterns with a first width opening exposing a region where recess patterns are to be formed, and a second width opening smaller than the first width and exposing the isolation layer, forming a passivation layer along a height difference of the mask patterns, etching the substrate using the passivation layer and the mask patterns as an etch barrier to form recess patterns, removing the passivation layer and the mask patterns, and forming gate patterns protruding from the substrate to fill the recess patterns.

    摘要翻译： 一种用于制造具有凹槽的半导体器件的方法包括提供衬底，在衬底上形成隔离层以限定有源区，形成具有第一宽度开口的掩模图案，该第一宽度开口露出要形成凹部图案的区域，以及 第二宽度开口小于第一宽度并暴露隔离层，沿着掩模图案的高度差形成钝化层，使用钝化层蚀刻衬底，并将掩模图案作为蚀刻阻挡层以形成凹陷图案，去除钝化层 层和掩模图案，以及形成从基板突出以填充凹陷图案的栅极图案。

    Forming method of liquid crystal layer using ink jet system
    22.
    发明授权
    Forming method of liquid crystal layer using ink jet system 有权
    使用喷墨系统形成液晶层的方法

    公开(公告)号：US07548284B2

    公开(公告)日：2009-06-16

    申请号：US12007212

    申请日：2008-01-08

    申请人： Gee-Sung Chae ,  Jae-Kyun Lee ,  Yong-Sup Hwang

    发明人： Gee-Sung Chae ,  Jae-Kyun Lee ,  Yong-Sup Hwang

    IPC分类号： G02F1/1343 ,  G02F1/136

    CPC分类号： G02F1/13458 ,  G02F1/1362 ,  G02F1/136213

    摘要： According to an embodiment, a fabrication method includes forming a gate line disposed along a first direction and a common line parallel to the gate line on a substrate, the gate and common lines spaced apart from each other, forming a gate insulating layer on the gate and common lines, forming a semiconductor layer on the gate insulating layer, forming a source electrode and a pixel electrode of transparent conductive material, the pixel electrode including a drain electrode portion, the drain electrode portion overlapping the semiconductor layer, forming a passivation layer including a first contact hole and an open portion, the first contact hole exposing the source electrode and the open portion exposing the pixel electrode, respectively, and forming a data line disposed along a second direction on the passivation layer, the data line connected to the source electrode through the first contact hole and crossing the gate line.

    摘要翻译： 根据实施例，制造方法包括：形成沿着第一方向设置的栅极线和与基板上的栅极线平行的公共线，栅极和公共线彼此间隔开，在栅极上形成栅极绝缘层 和公共线，在栅极绝缘层上形成半导体层，形成透明导电材料的源电极和像素电极，所述像素电极包括漏电极部分，所述漏电极部分与所述半导体层重叠，形成钝化层，所述钝化层包括 第一接触孔和开口部分，所述第一接触孔分别暴露所述源极电极和所述开放部分，暴露所述像素电极，并且形成沿所述钝化层沿着第二方向布置的数据线，所述数据线连接到所述源极 电极通过第一接触孔并与栅极线交叉。

    Method of curing hydrogen silsesquioxane and densification in nano-scale trenches
    23.
    发明申请
    Method of curing hydrogen silsesquioxane and densification in nano-scale trenches 审中-公开
    固化氢倍半硅氧烷和纳米级沟槽致密化的方法

    公开(公告)号：US20090032901A1

    公开(公告)日：2009-02-05

    申请号：US11919109

    申请日：2006-06-12

    申请人： Wei Chen ,  Byung Keun Hwang ,  Jae-Kyun Lee ,  Eric Scott Moyer ,  Michael John Spaulding ,  Sheng Wang

    发明人： Wei Chen ,  Byung Keun Hwang ,  Jae-Kyun Lee ,  Eric Scott Moyer ,  Michael John Spaulding ,  Sheng Wang

    IPC分类号： H01L21/762 ,  H01L23/58

    CPC分类号： H01L21/3124 ,  H01L21/02134 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/316

    摘要： Trenches in a semiconductor substrate are filled by (i) dispensing a film forming material on the semiconductor substrate and into the trenches; (ii) curing the dispensed film forming material in the presence of an oxidant at a first low temperature for a first predetermined period of time; (iii) curing the dispensed film forming material in the presence of an oxidant at a second low temperature for a second predetermined period of time; (iv) curing the dispensed film forming material in the presence of an oxidant at a third high temperature for a third predetermined period of time; and (v) forming filled oxide trenches in the semiconductor substrate. The film forming material is hydrogen silsesquioxane.

    摘要翻译： 通过（i）在半导体衬底上分配成膜材料并进入沟槽来填充半导体衬底中的沟槽; （ii）在第一低温下在氧化剂存在下固化所分配的成膜材料持续第一预定时间段; （iii）在第二低温下在氧化剂存在下固化所分配的成膜材料持续第二预定时间段; （iv）在第三高温下在氧化剂存在下固化分配的成膜材料持续第三预定时间; 和（v）在半导体衬底中形成填充的氧化物沟槽。 成膜材料是氢倍半硅氧烷。

    Forming method of liquid crystal layer using ink jet system
    24.
    发明授权
    Forming method of liquid crystal layer using ink jet system 有权
    使用喷墨系统形成液晶层的方法

    公开(公告)号：US07333161B2

    公开(公告)日：2008-02-19

    申请号：US10961081

    申请日：2004-10-12

    申请人： Goe-Sung Chae ,  Jae-Kyun Lee ,  Yong-Sup Hwang

    发明人： Goe-Sung Chae ,  Jae-Kyun Lee ,  Yong-Sup Hwang

    IPC分类号： G02F1/136 ,  G02F1/1343

    CPC分类号： G02F1/13458 ,  G02F1/1362 ,  G02F1/136213

    摘要： An array substrate includes a substrate, a gate line disposed along a first direction on the substrate, and a common line is parallel to the gate line, the common line being of the same material as the gate line. A gate insulating layer is on the gate and common lines, a semiconductor layer is on the gate insulating layer and a transparent pixel electrode includes a drain electrode portion. The drain electrode portion overlaps the semiconductor. A passivation layer includes a first contact hole and an open portion over the pixel and source electrodes, the first contact hole exposing the source electrode and the open portion exposing the pixel electrode, respectively. A data line is disposed along a second direction on the passivation layer, and the data line connected to the source electrode through the first contact hole and crossing the gate line.

    摘要翻译： 阵列基板包括基板，沿着基板上的第一方向设置的栅极线，并且公共线平行于栅极线，公共线与栅极线具有相同的材料。 栅绝缘层在栅极和公共线上，半导体层在栅极绝缘层上，透明像素电极包括漏电极部分。 漏极部分与半导体重叠。 钝化层包括第一接触孔和在像素和源极上的开口部分，第一接触孔分别暴露出源电极和暴露像素电极的开放部分。 数据线沿着第二方向设置在钝化层上，数据线通过第一接触孔与源极连接并与栅极线交叉。

    Fur and Fur Lace Made of Artificial or Natural Fur and the Product Method Thereof
    25.
    发明申请
    Fur and Fur Lace Made of Artificial or Natural Fur and the Product Method Thereof 审中-公开
    由人造或天然毛皮制成的毛皮和毛皮花边及其产品方法

    公开(公告)号：US20080028582A1

    公开(公告)日：2008-02-07

    申请号：US11630798

    申请日：2005-04-12

    申请人： Jae-Kyun Lee ,  Jae-Yeu Lee

    发明人： Jae-Kyun Lee ,  Jae-Yeu Lee

    IPC分类号： D06C23/00 ,  C14B1/00

    CPC分类号： C14B15/10 ,  A41H41/00

    摘要： A fur lace made of two or more artificial or natural fur pieces with pile fibers projected in a direction, a method for manufacturing a fur product, and a fur lace and a fur product manufactured by the method are disclosed. The leather portions of side fur pieces sewn at both sides of a center fur piece are utilized as a margin to sew up, rather than a bias tape for sewing a fur lace to a cloth or a general product, to thereby simplify manufacturing procedures and achieve aesthetic enhancement by changing direction of pile fibers and increasing the density of pile fibers of a specific part. When the fur lace is sewn on a cloth, bag, or other products, cut portions and seam line of a fur are completely covered by pile fibers or exposed to achieve aesthetic enhancement. In addition, pile fibers around the root of hair can be prevented from being curled up into a needle and thread, thereby improving productivity by eliminating the necessity of plucking out the pile fibers entangled with the thread by using a comb or an awl after completion of sewing work. The fur lace can be sewn to a wide variety of products including a cloth, bag, shoes, hat, shawl, muffler, and other accessories. The fur lace can be made from an artificial or natural fur.

    摘要翻译： 公开了一种由两个或更多个人造或天然毛皮制成的毛皮花边，绒毛纤维沿方向突出，毛皮制品的制造方法，以及通过该方法制造的毛皮花边和毛皮制品。 将缝制在中心毛皮两侧的侧毛皮片的皮革部分用作缝合的边缘，而不是用于将毛皮花边缝合到布或一般产品的偏置带，从而简化制造程序并实现 通过改变绒毛纤维的方向，提高特定部位的绒毛纤维的密度来提高美学效果。 当毛皮花边缝合在布，袋或其他产品上时，毛皮的切割部分和接缝线被绒毛纤维完全覆盖或暴露以达到美学增强。 此外，可以防止头发根部周围的绒毛纤维卷曲成针和线，从而通过消除在完成后使用梳子或锥子拔出与丝线缠结的绒头纤维的必要性来提高生产率 缝纫工作。 毛皮花边可以缝制到各种产品，包括布，袋，鞋，帽子，披肩，消声器等配件。 毛皮花边可以由人造或天然毛皮制成。

    TFT type optical detecting sensor implementing small-sized drive IC
    26.
    发明授权
    TFT type optical detecting sensor implementing small-sized drive IC 有权
    实现小型驱动IC的TFT型光检测传感器

    公开(公告)号：US06657175B2

    公开(公告)日：2003-12-02

    申请号：US09940627

    申请日：2001-08-29

    申请人： Tae-Hwan Yoon ,  Jae-Kyun Lee

    发明人： Tae-Hwan Yoon ,  Jae-Kyun Lee

    IPC分类号： H01J4014

    CPC分类号： H01L27/12 ,  H01L27/14601 ,  H01L27/14678

    摘要： A thin film transistor-type optical detecting sensor includes an array substrate provided with a plurality of regions, each region including a plurality of sensor thin film transistors each generating an optical current in response to light reflected from a subject for detection, a plurality of storage capacitors each connected with a corresponding one of the plurality of sensor thin film transistors to store charge representative of the optical current, a plurality of switch thin film transistors each connected with a corresponding one of the plurality of storage capacitors for selectively outputting the stored charge, and a plurality of output lines each connected with a corresponding one of the plurality of switch thin film transistors, a backlight unit disposed beneath the array substrate to provide the light to the plurality of regions, and a drive IC including a plurality of sub-circuits, wherein an nth sub-circuit is connected with an nth output line of each region of the array substrate.

    摘要翻译： 薄膜晶体管型光学检测传感器包括具有多个区域的阵列基板，每个区域包括多个传感器薄膜晶体管，每个传感器薄膜晶体管响应于用于检测的对象反射的光而产生光电流，多个存储 每个与所述多个传感器薄膜晶体管中的相应一个传感器薄膜晶体管相连的电容器，用于存储表示所述光电流的电荷;多个开关薄膜晶体管，每个开关薄膜晶体管与所述多个存储电容器中的对应的一个存储电容器相连， 以及多个输出线，各自与所述多个开关薄膜晶体管中的相应一个连接，设置在所述阵列基板下方以向所述多个区域提供光的背光单元，以及包括多个子电路的驱动IC 其中第n个子电路与ar的每个区域的第n个输出线连接 射线基片。

    Array substrate for in-plane switching mode liquid crystal display device
    27.
    发明授权
    Array substrate for in-plane switching mode liquid crystal display device 有权
    阵列基板用于面内切换模式液晶显示装置

    公开(公告)号：US08842108B2

    公开(公告)日：2014-09-23

    申请号：US13099714

    申请日：2011-05-03

    申请人： Jae-Kyun Lee ,  Jae-Young Oh ,  Dae-Jung Choi ,  Sun-Woo Kim

    发明人： Jae-Kyun Lee ,  Jae-Young Oh ,  Dae-Jung Choi ,  Sun-Woo Kim

    IPC分类号： G09G3/36 ,  G02F1/1362 ,  G02F1/1343

    CPC分类号： G02F1/136209 ,  G02F1/134363 ,  G02F2001/136222

    摘要： An array substrate for a liquid crystal display device includes: a substrate; a gate line and a data line on the substrate; a common line parallel to and spaced apart from the gate line; a thin film transistor connected to the gate line and the data line; a plurality of pixel electrodes in the pixel region; a plurality of common electrodes alternating with the plurality of pixel electrodes; at least one outermost common electrode at an edge portion of the pixel region; a black matrix corresponding to the thin film transistor, the gate line and the data line, the black matrix including an inorganic material and having an open portion; and a color filter layer in the open portion.

    摘要翻译： 液晶显示装置用阵列基板包括：基板; 基板上的栅极线和数据线; 与栅极线平行并间隔开的公共线; 连接到栅极线和数据线的薄膜晶体管; 像素区域中的多个像素电极; 多个公共电极与所述多个像素电极交替; 在像素区域的边缘部分处的至少一个最外侧公共电极; 对应于薄膜晶体管，栅线和数据线的黑矩阵，黑矩阵包括无机材料并具有开口部分; 和打开部分中​​的滤色器层。

    Method for fabricating semiconductor device
    28.
    发明授权
    Method for fabricating semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08426257B2

    公开(公告)日：2013-04-23

    申请号：US12004179

    申请日：2007-12-20

    申请人： Hyun-Sik Park ,  Hae-Jung Lee ,  Jae-Kyun Lee

    发明人： Hyun-Sik Park ,  Hae-Jung Lee ,  Jae-Kyun Lee

    IPC分类号： H01L27/10

    CPC分类号： H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for fabricating a semiconductor device includes forming a fuse over a substrate, the fuse having a barrier layer, a metal layer, and an anti-reflective layer stacked, selectively removing the anti-reflective layer, forming an insulation layer over a whole surface of the resultant structure including the fuse, and performing repair-etching such that part of the insulation layer remains above the fuse.

    摘要翻译： 一种用于制造半导体器件的方法，包括在衬底上形成熔丝，所述熔丝具有阻挡层，金属层和抗反射层，层叠，选择性地去除抗反射层，在整个表面上形成绝缘层 包括保险丝的所得结构，并执行修补蚀刻，使得绝缘层的一部分保留在保险丝上方。

    Array substrate for liquid crystal display device and method of manufacturing the same
    29.
    发明授权
    Array substrate for liquid crystal display device and method of manufacturing the same 有权
    液晶显示装置用阵列基板及其制造方法

    公开(公告)号：US08223281B2

    公开(公告)日：2012-07-17

    申请号：US13238987

    申请日：2011-09-21

    申请人： Jung-Eun Lee ,  Jae-Kyun Lee ,  Moo-Hyoung Song ,  Seung-Chan Choi

    发明人： Jung-Eun Lee ,  Jae-Kyun Lee ,  Moo-Hyoung Song ,  Seung-Chan Choi

    IPC分类号： G02F1/1343

    CPC分类号： H01L33/0041 ,  G02F1/134363 ,  G02F1/136209

    摘要： An array substrate for an in-plane switching mode liquid crystal display device includes a substrate, a gate line disposed along a first direction on the substrate, a data line disposed along a second direction and crossing the gate line to define a pixel region, a thin film transistor connected to the gate line and the data line, pixel electrodes disposed in the pixel region and connected to the thin film transistor, common electrodes disposed in the pixel region and alternating with the pixel electrodes, a semiconductor layer underlying the data line and including a portion having a width greater than a width of the data line, and a first blocking pattern comprising an opaque material and disposed under the semiconductor layer.

    摘要翻译： 面内切换模式液晶显示装置的阵列基板包括基板，沿基板的第一方向设置的栅极线，沿着第二方向设置并与栅极线交叉以限定像素区域的数据线， 连接到栅极线和数据线的薄膜晶体管，设置在像素区域中并连接到薄膜晶体管的像素电极，设置在像素区域中并与像素电极交替的公共电极，位于数据线下面的半导体层，以及 包括宽度大于数据线的宽度的部分，以及包括不透明材料并设置在半导体层下方的第一阻挡图案。