公开(公告)号：US20090032901A1

公开(公告)日：2009-02-05

申请号：US11919109

申请日：2006-06-12

申请人： Wei Chen ,  Byung Keun Hwang ,  Jae-Kyun Lee ,  Eric Scott Moyer ,  Michael John Spaulding ,  Sheng Wang

发明人： Wei Chen ,  Byung Keun Hwang ,  Jae-Kyun Lee ,  Eric Scott Moyer ,  Michael John Spaulding ,  Sheng Wang

IPC分类号： H01L21/762 ,  H01L23/58

CPC分类号： H01L21/3124 ,  H01L21/02134 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/316

摘要： Trenches in a semiconductor substrate are filled by (i) dispensing a film forming material on the semiconductor substrate and into the trenches; (ii) curing the dispensed film forming material in the presence of an oxidant at a first low temperature for a first predetermined period of time; (iii) curing the dispensed film forming material in the presence of an oxidant at a second low temperature for a second predetermined period of time; (iv) curing the dispensed film forming material in the presence of an oxidant at a third high temperature for a third predetermined period of time; and (v) forming filled oxide trenches in the semiconductor substrate. The film forming material is hydrogen silsesquioxane.

摘要翻译： 通过（i）在半导体衬底上分配成膜材料并进入沟槽来填充半导体衬底中的沟槽; （ii）在第一低温下在氧化剂存在下固化所分配的成膜材料持续第一预定时间段; （iii）在第二低温下在氧化剂存在下固化所分配的成膜材料持续第二预定时间段; （iv）在第三高温下在氧化剂存在下固化分配的成膜材料持续第三预定时间; 和（v）在半导体衬底中形成填充的氧化物沟槽。 成膜材料是氢倍半硅氧烷。

公开(公告)号：US07189664B2

公开(公告)日：2007-03-13

申请号：US10543672

申请日：2004-01-26

申请人： Mark Jon Loboda ,  Byung Keun Hwang

发明人： Mark Jon Loboda ,  Byung Keun Hwang

IPC分类号： H01L21/469

CPC分类号： C23C16/30

摘要： A method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises using plasma-assisted polymerization to react a cyclic silane compound containing at least one strained silicon bond to produce the films. The resulting films are useful in the formation of semiconductor devices.

摘要翻译： 一种具有低介电常数的氢化硅碳化氢（H：SiOC）薄膜的制造方法。 该方法包括使用等离子体辅助聚合反应含有至少一个应变硅键的环状硅烷化合物以制备膜。 所得膜可用于形成半导体器件。

公开(公告)号：US06667553B2

公开(公告)日：2003-12-23

申请号：US09990000

申请日：2001-11-21

申请人： Glenn Allen Cerny ,  Byung Keun Hwang ,  Mark Jon Loboda

发明人： Glenn Allen Cerny ,  Byung Keun Hwang ,  Mark Jon Loboda

IPC分类号： H01L2348

CPC分类号： H01L21/02126 ,  C23C16/30 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31633

摘要： This invention pertains to a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant and a light transmittance of 95% or more for light with a wavelength in the range of 400 nm to 800 nm. The method comprises reacting a methyl-containing silane in a controlled oxygen environment using plasma enhanced or ozone assisted chemical vapor deposition to produce the films. Because of the transmittance the resulting films are useful in the formation of display devices.

公开(公告)号：US20110155956A1

公开(公告)日：2011-06-30

申请号：US13061214

申请日：2009-08-19

申请人： Muhammad Ather Ashraf ,  Byung Keun Hwang ,  Bonnie J. Ludwig

发明人： Muhammad Ather Ashraf ,  Byung Keun Hwang ,  Bonnie J. Ludwig

IPC分类号： C09K11/06 ,  B29C47/00 ,  B29C71/00 ,  G02B1/10 ,  B82Y40/00 ,  B82Y20/00

CPC分类号： C04B35/6268 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/15 ,  C01B32/907 ,  C01B32/956 ,  C01B33/021 ,  C04B35/6224 ,  C04B35/62281 ,  C04B35/62675 ,  C04B2235/3418 ,  C04B2235/3826 ,  C04B2235/422 ,  C04B2235/483 ,  C04B2235/5264 ,  C04B2235/5454 ,  C04B2235/9661 ,  D01F6/94

摘要： A method produces nanoparticles by electrospinning a silicon composition having at least one silicon atom. The electrospinning of the silicon composition forms fibers. The fibers are pyrolyzed to produce the nanoparticles. The nanoparticles have excellent photo-luminescent properties and are suitable for use in many different applications.

摘要翻译： 一种方法是通过静电纺丝具有至少一个硅原子的硅组合物来生产纳米颗粒。 硅组合物的静电纺丝形成纤维。 纤维被热解以产生纳米颗粒。 纳米颗粒具有优异的光致发光性能，适用于许多不同的应用。

公开(公告)号：US06593248B2

公开(公告)日：2003-07-15

申请号：US10103331

申请日：2002-03-20

申请人： Mark Jon Loboda ,  Byung Keun Hwang

发明人： Mark Jon Loboda ,  Byung Keun Hwang

IPC分类号： H01L2131

CPC分类号： H01L21/02131 ,  C23C16/30 ,  C23C16/325 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31629 ,  H01L21/31633

摘要： A method for producing fluorinated hydrogenated silicon oxycarbide (H:F:SiOC) and amorphous fluorinated hydrogenated silicon carbide (H:F:SiC) films having low dielectric permittivity. The method comprises reacting a silicon containing compound with a fluorocarbon or fluorohydrocarbon compound having an unsaturated carbon bonded to F or H. The resulting films are useful in the formation of semiconductor devices.