High yield reticle with proximity effect halos
    21.
    发明授权
    High yield reticle with proximity effect halos 有权
    具有接近效应光晕的高产线标板

    公开(公告)号:US06968527B2

    公开(公告)日:2005-11-22

    申请号:US10369713

    申请日:2003-02-19

    摘要: A lithography reticle advantageously includes “proximity effect halos” around tight tolerance features. During reticle formation, the tight tolerance features and associated halos can be carefully written and inspected to ensure accuracy while the other portions of the reticle can be written/inspected less stringently for efficiency. A system for creating a reticle data file from an IC layout data file can include a processing module and a graphical display. The processing module can read the IC layout data file, identify critical features and define a halo region around each of the critical features. The graphical user interface can facilitate user input and control. The system can be coupled to a remote IC layout database through a LAN or a WAN.

    摘要翻译: 光刻掩模版有利地包括围绕紧公差特征的“接近效应光晕”。 在标线形成期间,可以仔细地写入和检查紧密公差特征和相关光晕,以确保准确度,同时不要严格地对掩模版的其他部分进行写入/检查以获得效率。 用于从IC布局数据文件创建标线数据文件的系统可以包括处理模块和图形显示。 处理模块可以读取IC布局数据文件,识别关键特征,并围绕每个关键特征定义光晕区域。 图形用户界面可以方便用户输入和控制。 该系统可以通过LAN或WAN耦合到远程IC布局数据库。

    Method and system for simulating resist and etch edges
    22.
    发明授权
    Method and system for simulating resist and etch edges 有权
    用于模拟抗蚀剂和蚀刻边缘的方法和系统

    公开(公告)号:US06954911B2

    公开(公告)日:2005-10-11

    申请号:US10137828

    申请日:2002-05-01

    CPC分类号: G03F7/705 G03F1/36 H01L22/20

    摘要: A method of modeling an edge profile for a layer of material is provided. The layer of material can include a resist and/or an etch. In this method, multiple models can be generated, wherein at least two models correspond to different elevations on the wafer. Each model includes an optical model, which has been calibrated using test measurements at the respective elevations. In this manner, an accurate edge profile can be quickly created using the multiple models. Based on the edge profile, layout, mask, and/or process conditions can be modified to improve wafer printing.

    摘要翻译: 提供了一种用于材料层的边缘轮廓建模的方法。 该材料层可以包括抗蚀剂和/或蚀刻。 在该方法中,可以生成多个模型,其中至少两个模型对应于晶片上的不同高度。 每个模型都包括一个光学模型,它已经在各个高度上使用测试测量进行了校准。 以这种方式,可以使用多个模型快速创建准确的边缘轮廓。 基于边缘轮廓,可以修改布局,掩模和/或工艺条件以改进晶片印刷。

    Design data format and hierarchy management for processing
    23.
    发明申请
    Design data format and hierarchy management for processing 有权
    设计数据格式和层次管理进行处理

    公开(公告)号:US20050166173A1

    公开(公告)日:2005-07-28

    申请号:US11083697

    申请日:2005-03-17

    摘要: Definition of a phase shifting layout from an original layout can be time consuming. If the original layout is divided into useful groups, i.e. clusters that can be independently processed, then the phase shifting process can be performed more rapidly. If the shapes on the layout are enlarged, then the overlapping shapes can be grouped together to identify shapes that should be processed together. For large layouts, growing and grouping the shapes can be time consuming. Therefore, an approach that uses bins can speed up the clustering process, thereby allowing the phase shifting to be performed in parallel on multiple computers. Additional efficiencies result if identical clusters are identified and processing time saved so that repeated clusters of shapes only undergo the computationally expensive phase shifter placement and assignment process a single time.

    摘要翻译: 从原始布局定义相移布局可能是耗时的。 如果将原始布局分成有用的组,即可以被独立处理的集群,则可以更快地执行相移过程。 如果布局上的形状被放大,则可以将重叠的形状分组在一起以识别应该一起处理的形状。 对于大型布局,增长和分组形状可能是耗时的。 因此,使用箱体的方法可以加快聚类过程,从而允许在多个计算机上并行执行相移。 如果确定相同的集群并节省处理时间,则可以产生额外的效率,以便重复的形状集群只能在单次时间内经历计算上昂贵的移相器放置和分配过程。

    Facilitating optical proximity effect correction through pupil filtering
    25.
    发明授权
    Facilitating optical proximity effect correction through pupil filtering 有权
    通过瞳孔滤波促进光学邻近效应校正

    公开(公告)号:US06846617B2

    公开(公告)日:2005-01-25

    申请号:US10146274

    申请日:2002-05-15

    IPC分类号: G02B27/46 G03F7/20 G03B27/14

    摘要: One embodiment of the invention provides a system that uses pupil filtering to mitigate optical proximity effects that arise during an optical lithography process for manufacturing an integrated circuit. During operation, the system applies a photoresist layer to a wafer and then exposes the photoresist layer through a mask. During this exposure process, the system performs pupil filtering, wherein the pupil filtering corrects for optical proximity effects caused by an optical system used to expose the photoresist layer.

    摘要翻译: 本发明的一个实施例提供一种使用光瞳滤波来减轻在用于制造集成电路的光学光刻工艺期间产生的光学邻近效应的系统。 在操作期间,系统将光致抗蚀剂层施加到晶片,然后通过掩模曝光光致抗蚀剂层。 在该曝光过程期间,系统执行光瞳滤波,其中光瞳滤波校正由用于曝光光致抗蚀剂层的光学系统引起的光学邻近效应。

    Optical proximity correction for phase shifting photolithographic masks
    26.
    发明授权
    Optical proximity correction for phase shifting photolithographic masks 有权
    用于相移光刻掩模的光学邻近校正

    公开(公告)号:US06721938B2

    公开(公告)日:2004-04-13

    申请号:US10082697

    申请日:2002-02-25

    IPC分类号: G06F1750

    CPC分类号: G03F1/30 G03F1/36 G03F1/70

    摘要: A method for producing a computer readable definition of photolithographic mask used to define a target pattern is provided. The phase shift mask patterns include phase shift windows, and the trim mask patterns include trim shapes, which have boundaries defined by such sets of line segments. For a particular pair of phase shift windows used to define a target feature in a target pattern, each of the phase shift windows in the pair can be considered to have a boundary that includes at least one line segment that abuts the target feature. Likewise, a complementary trim shape used in definition of the target feature, for example by including a transmissive region used to clear an unwanted phase transition between the particular pair of phase shift windows, includes at least one line segment that can be considered to abut the target feature. Proximity correction is provided by adjusting the position of the at least one line segment on the boundary of a phase shift windows in said pair which abuts the target feature, and by adjusting the position of the at least one line segment on the boundary of the complementary trim shape which abuts the target feature.

    摘要翻译: 提供了一种用于产生用于定义目标图案的光刻掩模的计算机可读定义的方法。 相移掩模图案包括相移窗口,并且修剪掩模图案包括具有由这些线段集合限定的边界的修剪形状。 对于用于定义目标图案中的目标特征的特定的一对相移窗口,该对中的每个相移窗口可以被认为具有包括至少一个邻接目标特征的线段的边界。 类似地,在目标特征的定义中使用的互补的修剪形状,例如通过包括用于清除特定的一对相移窗口之间的不需要的相变的透射区域,包括至少一个可被认为邻接 目标特征。 通过调整邻接目标特征的所述对中的相移窗口的边界上的至少一个线段的位置,并且通过调整互补的边界上的至少一个线段的位置来提供接近校正 贴合目标特征的修剪形状。

    Self-aligned fabrication technique for tri-tone attenuated phase-shifting masks

    公开(公告)号:US06551750B2

    公开(公告)日:2003-04-22

    申请号:US09810823

    申请日:2001-03-16

    IPC分类号: G03F900

    CPC分类号: G03F1/32

    摘要: A structure and method are provided to ensure self-aligned fabrication of a tri-tone attenuated phase-shifting mask. A sub-resolution, 0 degree phase, greater than 90% transmission rim is provided along the edge of an opaque region. The alignment of this sub-resolution rim with the opaque and attenuated regions of the mask is performed in a single patterning step. In one embodiment, a narrow opaque region can be replaced by a sub-resolution, 0 degree phase, greater than 90% transmission line.

    Phase shift masking for intersecting lines
    28.
    发明授权
    Phase shift masking for intersecting lines 有权
    相交线相移屏蔽

    公开(公告)号:US06524752B1

    公开(公告)日:2003-02-25

    申请号:US09669368

    申请日:2000-09-26

    IPC分类号: G03F900

    CPC分类号: G03F1/30 G03F1/36

    摘要: Techniques are provided for extending the use of phase shift techniques to implementation of masks used for complex layouts in the layers of integrated circuits, beyond selected critical dimension features such as transistor gates to which such structures have been limited in the past. The method includes identifying features for which phase shifting can be applied, automatically mapping the phase shifting regions for implementation of such features, resolving phase conflicts which might occur according to a given design rule, and application of sub-resolution assist features within phase shift regions and optical proximity correction features to phase shift regions. Both opaque field phase shift masks and complementary binary masks defining interconnect structures and other types of structures that are not defined using phase shifting, necessary for completion of the layout of the layer are produced.

    摘要翻译: 提供了技术,用于将相移技术的使用扩展到在集成电路层中复杂布局的掩模的实现,超出了过去已经限制了这种结构的所选临界尺寸特征,例如晶体管栅极。 该方法包括识别可以对其进行相移的特征,自动映射用于实现这些特征的相移区域,解决根据给定设计规则可能发生的相位冲突,以及在相移区域内应用子分辨率辅助特征 和光学邻近校正特征到相移区域。 产生不完整的场相移掩模和定义互连结构的互补二进制掩模和不使用相移定义的其它类型的结构,这些结构对于完成层的布局是必需的。

    Method for patterning and fabricating wordlines
    29.
    发明授权
    Method for patterning and fabricating wordlines 失效
    图案化和制作字线的方法

    公开(公告)号:US06424882B2

    公开(公告)日:2002-07-23

    申请号:US09768000

    申请日:2001-01-23

    IPC分类号: G06F1900

    CPC分类号: G03F1/29 G03F7/70433

    摘要: The shape of chrome patterns on an optical pattern transfer tool are adjusted to get a desired shape on a wafer in the manufacture of semiconductor devices, wherein very small regions on a photoresist are defined and these regions are controlled with a high degree of accuracy. The optical pattern transfer tool has first and second planar surfaces lying in substantially parallel planes and a plurality of opaque regions overlying the first planar surface. First and second steps formed between and the first and second planar surfaces at first and second edges, respectively, define a width of the first planar surface. Each of the opaque regions are spaced from one another and offset from one another such that they are alternately aligned along a length of the first planar surface, such that one of the opaque regions is aligned with a portion of the first edge and the next one of the opaque regions along the length is aligned with a portion of the second edge. As a result of improving the process latitude of the wordline level in DRAMS, the size of the wordline over nonactive areas is reduced so that a maximum area is given for active areas for the bit contact and the container.

    摘要翻译: 调整光学图案转印工具上的铬图案的形状以在半导体器件的制造中在晶片上获得期望的形状,其中限定光致抗蚀剂上的非常小的区域,并且以高精度控制这些区域。 光学图案转印工具具有位于基本上平行的平面中的第一和第二平面表面和覆盖在第一平面表面上的多个不透明区域。 在第一和第二边缘处分别形成在第一和第二平面之间的第一和第二台阶分别限定第一平面的宽度。 每个不透明区域彼此间隔开并彼此偏移,使得它们沿着第一平面表面的长度交替排列,使得不透明区域中的一个与第一边缘的一部分对准,下一个 沿着长度的不透明区域与第二边缘的一部分对准。 作为DRAMS中字线级别的处理纬度得到改善的结果,减少了非活动区域上的字线大小,从而给出了位触点和容器的有效区域的最大面积。

    Enhanced capacitor shape
    30.
    发明授权
    Enhanced capacitor shape 有权
    增强电容器形状

    公开(公告)号:US06418008B1

    公开(公告)日:2002-07-09

    申请号:US09798992

    申请日:2001-03-06

    IPC分类号: H01G4005

    摘要: A capacitor having a pear-shaped cross section is provided. In one embodiment, the pear-shaped capacitor is a stacked container capacitor used in a dynamic random access memory circuit with a bit-line-over-capacitor construction. Each capacitor is at a minimum bit line distance from all adjacent bit line contacts, and also at a minimum capacitor distance from all adjacent capacitors along a substantial portion of its perimeter.

    摘要翻译: 提供具有梨形截面的电容器。 在一个实施例中,梨形电容器是用于具有位线电容器结构的动态随机存取存储器电路中的堆叠容器电容器。 每个电容器处于与所有相邻位线触点的最小位线距离,并且在与其周边的实质部分的所有相邻电容器的最小电容器距离处。