公开(公告)号：US06919588B1

公开(公告)日：2005-07-19

申请号：US10650000

申请日：2003-08-27

Applicant: Vladislav Vashchenko ,  Andy Strachan ,  Peter J. Hopper ,  Philipp Lindorfer

Inventor： Vladislav Vashchenko ,  Andy Strachan ,  Peter J. Hopper ,  Philipp Lindorfer

IPC: H01L27/02 ,  H01L29/74

CPC classification number: H01L27/0248 ,  H01L29/7436

Abstract: When a high-voltage, such as from an ESD pulse, is placed across a silicon controlled rectifier, which includes an NPN transistor and a PNP transistor that is connected to the NPN transistor, the likelihood of punch through occurring between two regions of the rectifier is substantially reduced by forming the emitter of one transistor adjacent to the tails of the sinker down region of the other transistor.

Abstract translation: 当诸如ESD脉冲之类的高压被放置在包括NPN晶体管和连接到NPN晶体管的PNP晶体管的可控硅整流器上时，整流器的两个区域之间产生冲击的可能性 通过形成一个晶体管的发射极，与另一个晶体管的下沉区域的尾部相邻。

公开(公告)号：US06646318B1

公开(公告)日：2003-11-11

申请号：US10219836

申请日：2002-08-15

Applicant: Peter J. Hopper ,  Philipp Lindorfer

Inventor： Peter J. Hopper ,  Philipp Lindorfer

IPC: H01L31028

CPC classification number: H04N9/045 ,  H01L27/14647 ,  H04N5/3696

Abstract: A combination of materials is used to form the photodiodes of a vertical color imager cell. The materials used to form the photodiodes have different band gaps that allow the photon absorption rates of the photodiodes to be adjusted. By adjusting the photon absorption rates, the sensitivities of the photodiodes and thereby the characteristics of the imager can be adjusted.

Abstract translation: 使用材料的组合来形成垂直彩色成像器单元的光电二极管。 用于形成光电二极管的材料具有不同的带隙，允许调整光电二极管的光子吸收速率。 通过调整光子吸收率，可以调节光电二极管的灵敏度，从而调整成像器的特性。

公开(公告)号：US06639784B1

公开(公告)日：2003-10-28

申请号：US10283810

申请日：2002-10-30

Applicant: Peter Hopper ,  Philipp Lindorfer ,  Kyuwoon Hwang ,  Andy Strachan ,  Vladislav Vashchenko

Inventor： Peter Hopper ,  Philipp Lindorfer ,  Kyuwoon Hwang ,  Andy Strachan ,  Vladislav Vashchenko

IPC: H01J4228

CPC classification number: H01L28/91 ,  H01L27/0805

Abstract: A capacitor structure is formed in a wedge-shaped trench by forming alternating layers of insulating material and conductive material in the trench such that each layer of conductive material formed in the trench is electrically isolated from adjacent layers of conductive material formed in the trench. A first electrical contact is formed to electrically link in parallel a first set of alternating layers of conductive material. A second electrical contact is formed to electrically link in parallel a second set of alternating layers of conductive material. The two electrically isolated sets of inter-linked layers of conductive material define the interdigitated capacitor structure.

Abstract translation: 电容器结构通过在沟槽中形成绝缘材料和导电材料的交替层而形成在楔形沟槽中，使得形成在沟槽中的每个导电材料层与在沟槽中形成的导电材料的相邻层电隔离。 形成第一电接触以平行地电连接导电材料的第一组交替层。 形成第二电接触以平行地电连接第二组交替的导电材料层。 导电材料的两个电隔离的相互连接的层限定了交叉指向的电容器结构。

公开(公告)号：US08303484B2

公开(公告)日：2012-11-06

申请号：US12621719

申请日：2009-11-19

Applicant: Peter J. Hopper ,  Philipp Lindorfer ,  William French ,  Visvamohan Yegnashankaran

Inventor： Peter J. Hopper ,  Philipp Lindorfer ,  William French ,  Visvamohan Yegnashankaran

IPC: A61B1/00

CPC classification number: A61B1/041 ,  A61B1/00082 ,  A61B1/00156 ,  A61B1/005 ,  A61B1/31 ,  A61B8/12 ,  A61B8/429 ,  A61B8/4472

Abstract: A self-propelled robotic device moves through bodily and other passageways by inflating regions of an overlying bladder along the length of the robotic device in a sequence that imparts motion to the device. The regions of the overlying bladder are inflated by energizing a plurality of coils, which are surrounded by a ferrofluid, in a sequence. The ferrofluid responds to the magnetic field created by an energized coil by creating a bulge in the side wall of the overlying bladder.

Abstract translation: 自动推进的机器人装置通过身体和其他通道沿着机器人装置的长度沿着向装置施加运动的顺序使覆盖的膀胱的区域膨胀而移动。 通过对由铁磁流体包围的多个线圈进行顺序地激励上覆的气囊的区域来充气。 铁磁流体通过在上覆气囊的侧壁中产生凸起来响应由通电线圈产生的磁场。

公开(公告)号：US07479435B1

公开(公告)日：2009-01-20

申请号：US11007565

申请日：2004-12-08

Applicant: Peter J. Hopper ,  Vladislav Vashchenko ,  Philipp Lindorfer ,  Andy Strachan

Inventor： Peter J. Hopper ,  Vladislav Vashchenko ,  Philipp Lindorfer ,  Andy Strachan

IPC: H01L29/788

CPC classification number: H01L21/26586 ,  H01L21/2652 ,  H01L21/823418 ,  H01L27/088 ,  H01L29/0847

Abstract: A MOS transistor and subsurface collectors can be formed by using a hard mask and precisely varying the implant angle, rotation, dose, and energy. In this case, a particular atomic species can be placed volumetrically in a required location under the hard mask. The dopant can be implanted to form sub-silicon volumes of arbitrary shapes, such as pipes, volumes, hemispheres, and interconnects.

Abstract translation: 可以通过使用硬掩模并精确地改变植入角度，旋转，剂量和能量来形成MOS晶体管和地下收集器。 在这种情况下，特定的原子物质可以体积地放置在硬掩模下的所需位置。 可以将掺杂剂注入以形成任意形状的子硅体积，例如管道，体积，半球和互连。

公开(公告)号：US07394133B1

公开(公告)日：2008-07-01

申请号：US11216774

申请日：2005-08-31

Applicant: Vladislav Vashchenko ,  Peter J. Hopper ,  Philipp Lindorfer

Inventor： Vladislav Vashchenko ,  Peter J. Hopper ,  Philipp Lindorfer

IPC: H01L29/72

CPC classification number: H01L27/0262 ,  H01L29/0692 ,  H01L29/7436 ,  H01L29/87

Abstract: In an ESD protection structure, dual direction ESD protection is provided by forming an n-well isolation ring around an NMOS device so that the p-well in which the NMOS drain is formed is isolated from the underlying p-substrate by the n-well isolation ring. By forming the n-well isolation ring the p-n-p-n structure of an embedded SCR for reverse ESD protection is provided. The width of the n-well isolation ring and its spacing from the NMOS drain are adjusted to provide the desired SCR parameters.

Abstract translation: 在ESD保护结构中，通过在NMOS器件周围形成n阱隔离环来提供双向ESD保护，使得形成NMOS漏极的p阱通过n阱与下面的p衬底隔离 隔离环。 通过形成n阱隔离环，提供了用于反向ESD保护的嵌入式SCR的p-n-p-n结构。 调整n阱隔离环的宽度及其与NMOS漏极的间隔，以提供所需的SCR参数。

公开(公告)号：US07233521B1

公开(公告)日：2007-06-19

申请号：US11078761

申请日：2005-03-11

Applicant: Yuri Mirgorodski ,  Peter J. Hopper ,  Vladislav Vashshenco ,  Philipp Lindorfer

Inventor： Yuri Mirgorodski ,  Peter J. Hopper ,  Vladislav Vashshenco ,  Philipp Lindorfer

IPC: G11C11/34

CPC classification number: G11C27/005 ,  G11C11/5621 ,  G11C16/0441 ,  G11C16/10

Abstract: A storage device that is capable of receiving an analog signal and storing it as a digital signal. The storage device includes an input node configured to receive an analog input voltage and two non-volatile storage cells. A second non-volatile memory cell is coupled to receive the analog input signal from the input node. The second non-volatile memory cell is capable of being programmed to a one of a plurality of programming states. The first non-volatile memory cell, which is coupled to the second non-volatile memory cell, is also capable of being programmed to one of a plurality of programming states. During operation, the second non-volatile memory cell and the first non-volatile memory cell are both programmed to a selected second programming state indicative of the magnitude of the analog input voltage. The first programming state and the second programming state are together are indicative of a digital value commensurate with the magnitude of the analog input voltage.

Abstract translation: 一种能够接收模拟信号并将其存储为数字信号的存储装置。 存储装置包括被配置为接收模拟输入电压的输入节点和两个非易失性存储单元。 第二非易失性存储单元被耦合以从输入节点接收模拟输入信号。 第二非易失性存储单元能够被编程为多个编程状态之一。 耦合到第二非易失性存储单元的第一非易失性存储单元也能够被编程为多个编程状态之一。 在操作期间，第二非易失性存储器单元和第一非易失性存储器单元都被编程为指示模拟输入电压的大小的选择的第二编程状态。 第一编程状态和第二编程状态一起表示与模拟输入电压的大小相称的数字值。

公开(公告)号：US07218555B2

公开(公告)日：2007-05-15

申请号：US11242094

申请日：2005-10-03

Applicant: Peter J. Hopper ,  Philipp Lindorfer ,  Vladislav Vashchenko ,  Robert Drury

Inventor： Peter J. Hopper ,  Philipp Lindorfer ,  Vladislav Vashchenko ,  Robert Drury

IPC: G11C11/34 ,  H01L29/788

CPC classification number: H01L27/11526 ,  H01L27/115 ,  H01L27/11531 ,  H01L27/14603 ,  H01L27/14609

Abstract: The integration period of an imaging cell, or the time that an imaging cell is exposed to light energy, is substantially increased by utilizing a single-poly, electrically-programmable, read-only-memory (EPROM) structure to capture the light energy. Photogenerated electrons are formed in the channel region of the EPROM structure from the light energy. The photogenerated electrons are then accelerated into having ionizing collisions which, in turn, leads to electrons being injected onto the floating gate of the EPROM structure at a rate that is proportionate to the number of photons captured by the channel region.

Abstract translation: 成像单元的积分周期或成像单元暴露于光能的时间通过利用单聚电子可编程只读存储器（EPROM）结构捕获光能而大大增加。 光能从EPROM结构的沟道区形成光电子。 光生成的电子然后被加速成具有电离碰撞，其进而导致电子以与通道区域捕获的光子数成正比的速率注入到EPROM结构的浮动栅极上。

公开(公告)号：US07209503B1

公开(公告)日：2007-04-24

申请号：US10838671

申请日：2004-05-03

Applicant: Peter J. Hopper ,  Philipp Lindorfer ,  Vladislav Vashchenko ,  Yuri Mirgorodski

Inventor： Peter J. Hopper ,  Philipp Lindorfer ,  Vladislav Vashchenko ,  Yuri Mirgorodski

IPC: H01S5/00

CPC classification number: H01L27/1446 ,  H01L27/146

Abstract: An integrated circuit is powered by exposing conductive regions, such as the p+ source regions of the PMOS transistors that are formed to receive a supply voltage, to light energy from a light source. The conductive regions function as photodiodes that produce voltages on the conductive regions via the photovoltaic effect.

Abstract translation: 集成电路通过将形成为接收电源电压的PMOS晶体管的p +源极区域等导电区域暴露于来自光源的光能来供电。 导电区域用作通过光电效应在导电区域上产生电压的光电二极管。

公开(公告)号：US20070066002A1

公开(公告)日：2007-03-22

申请号：US11601485

申请日：2006-11-17

Applicant: Peter Hopper ,  Philipp Lindorfer ,  Vladislav Vashchenko ,  Yuri Mirgorodski

Inventor： Peter Hopper ,  Philipp Lindorfer ,  Vladislav Vashchenko ,  Yuri Mirgorodski

IPC: H01L21/8238

CPC classification number: H01L21/823814 ,  H01L29/1083 ,  H01L29/66659 ,  H01L29/78

Abstract: An implant is added at the interface between the source region of an MOS transistor and the well material to improve dynamic IR drop performance. The additional implant raises the underlying capacitance of the source region. This, in turn, provides for an increase in charge storage which, in turn, provides for an improved level of protection against dynamic IR drop.

Abstract translation: 在MOS晶体管的源极区域和阱材料之间的界面处添加植入物，以改善动态IR滴落性能。 额外的植入物提高了源区域的底层电容。 这又反过来提供了电荷存储的增加，这进而提供了防止动态IR降低的改进的防护等级。