公开(公告)号：US07218555B2

公开(公告)日：2007-05-15

申请号：US11242094

申请日：2005-10-03

申请人： Peter J. Hopper ,  Philipp Lindorfer ,  Vladislav Vashchenko ,  Robert Drury

发明人： Peter J. Hopper ,  Philipp Lindorfer ,  Vladislav Vashchenko ,  Robert Drury

IPC分类号： G11C11/34 ,  H01L29/788

CPC分类号： H01L27/11526 ,  H01L27/115 ,  H01L27/11531 ,  H01L27/14603 ,  H01L27/14609

摘要： The integration period of an imaging cell, or the time that an imaging cell is exposed to light energy, is substantially increased by utilizing a single-poly, electrically-programmable, read-only-memory (EPROM) structure to capture the light energy. Photogenerated electrons are formed in the channel region of the EPROM structure from the light energy. The photogenerated electrons are then accelerated into having ionizing collisions which, in turn, leads to electrons being injected onto the floating gate of the EPROM structure at a rate that is proportionate to the number of photons captured by the channel region.

摘要翻译： 成像单元的积分周期或成像单元暴露于光能的时间通过利用单聚电子可编程只读存储器（EPROM）结构捕获光能而大大增加。 光能从EPROM结构的沟道区形成光电子。 光生成的电子然后被加速成具有电离碰撞，其进而导致电子以与通道区域捕获的光子数成正比的速率注入到EPROM结构的浮动栅极上。

公开(公告)号：US06972457B1

公开(公告)日：2005-12-06

申请号：US10821286

申请日：2004-04-09

申请人： Peter J. Hopper ,  Philipp Lindorfer ,  Vladislav Vashchenko ,  Robert Drury

发明人： Peter J. Hopper ,  Philipp Lindorfer ,  Vladislav Vashchenko ,  Robert Drury

IPC分类号： H01L21/8247 ,  H01L27/115 ,  H01L27/146 ,  H01L29/76 ,  H01L29/788

CPC分类号： H01L27/11526 ,  H01L27/115 ,  H01L27/11531 ,  H01L27/14603 ,  H01L27/14609

摘要： The integration period of an imaging cell, or the time that an imaging cell is exposed to light energy, is substantially increased by utilizing a single-poly, electrically-programmable, read-only-memory (EPROM) structure to capture the light energy. Photogenerated electrons are formed in the channel region of the EPROM structure from the light energy. The photogenerated electrons are then accelerated into having ionizing collisions which, in turn, leads to electrons being injected onto the floating gate of the EPROM structure at a rate that is proportionate to the number of photons captured by the channel region.

摘要翻译： 成像单元的积分周期或成像单元暴露于光能的时间通过利用单聚电子可编程只读存储器（EPROM）结构捕获光能而大大增加。 光能从EPROM结构的沟道区形成光电子。 光生成的电子然后被加速成具有电离碰撞，其进而导致电子以与通道区域捕获的光子数成正比的速率注入到EPROM结构的浮动栅极上。

公开(公告)号：US07202538B1

公开(公告)日：2007-04-10

申请号：US10647604

申请日：2003-08-25

申请人： Peter J. Hopper ,  Philipp Lindorfer ,  Vladislav Vashchenko ,  Robert Drury

发明人： Peter J. Hopper ,  Philipp Lindorfer ,  Vladislav Vashchenko ,  Robert Drury

IPC分类号： H01L29/94

CPC分类号： H01L29/4238 ,  H01L21/28123 ,  H01L21/823481 ,  H01L21/823878 ,  H01L29/0692

摘要： A MOSFET transistor structure is formed in a substrate of semiconductor material having a first conductivity type. The MOSFET transistor structure includes an active region that is surrounded by a perimeter isolation dielectric material formed in the substrate to define a continuous sidewall interface between the sidewall dielectric material and the active region. Spaced-apart source and drain regions are formed in the active region and are also spaced-apart from the sidewall interface. A conductive gate electrode that is separated from the substrate channel region by intervening gate dielectric material includes a first portion that extends over the substrate channel region and a second portion that extends continuously over the entire sidewall interface between the isolation dielectric material and the active region. Thus, an enclosed ring is maintained around the entire composite perimeter, thereby completely avoiding regions of high trap density and, thus, preventing any current path for gate induced drain leakage (GIDL) to occur.

摘要翻译： 在具有第一导电类型的半导体材料的衬底中形成MOSFET晶体管结构。 MOSFET晶体管结构包括由形成在衬底中的周边隔离电介质材料围绕以限定侧壁电介质材料和有源区域之间的连续侧壁界面的有源区域。 间隔开的源极和漏极区域形成在有源区中并且也与侧壁界面间隔开。 通过介入栅极电介质材料与衬底沟道区分离的导电栅电极包括在衬底沟道区上延伸的第一部分和在隔离电介质材料与有源区之间的整个侧壁界面上连续延伸的第二部分。 因此，围绕整个复合材料周边保持封闭的环，从而完全避免高陷阱密度的区域，并因此防止发生栅极引起漏极泄漏（GIDL）的任何电流路径。

公开(公告)号：US06940133B1

公开(公告)日：2005-09-06

申请号：US10818039

申请日：2004-04-05

申请人： Peter J. Hopper ,  Philipp Lindorfer ,  Vladislav Vashchenko ,  Robert Drury

发明人： Peter J. Hopper ,  Philipp Lindorfer ,  Vladislav Vashchenko ,  Robert Drury

IPC分类号： H01C17/26 ,  H01L21/02 ,  H01L29/76 ,  H01L29/8605 ,  H01L29/94

CPC分类号： H01L28/20 ,  H01C17/267 ,  H01L29/8605

摘要： An integrated circuit trim structure includes a dopant source, a target trim element formed in proximity to the dopant source, and a conductive heating element. The heater element is formed in proximity to the dopant source and includes first and second terminals and a trapezoid shaped region formed between the first and second terminals. As predefined current pulse is applied to the first terminal to promote current flow between the first and second terminals, a local heat source is created at a predefined location within the trapezoid shaped region and in proximity to the dopant source such that dopant flows from the dopant source into the target trim element to change the conductive characteristics of the target trim element.

摘要翻译： 集成电路微调结构包括掺杂剂源，在掺杂剂源附近形成的目标微调元件和导电加热元件。 加热器元件形成在掺杂剂源附近，并且包括形成在第一和第二端子之间的第一和第二端子和梯形区域。 当预定义的电流脉冲施加到第一端子以促进第一和第二端子之间的电流流动时，在梯形区域内的预定位置处并且在掺杂剂源附近产生局部热源，使得掺杂剂从掺杂剂 源到目标装饰元件以改变目标装饰元件的导电特性。

公开(公告)号：US06852562B1

公开(公告)日：2005-02-08

申请号：US10728612

申请日：2003-12-05

申请人： Peter J. Hopper ,  Robert Drury ,  Philipp Lindorfer ,  Vladislav Vashchenko

发明人： Peter J. Hopper ,  Robert Drury ,  Philipp Lindorfer ,  Vladislav Vashchenko

IPC分类号： H01L21/00 ,  H01L27/146

CPC分类号： H01L27/14643 ,  H01L27/1462 ,  H01L27/14687

摘要： A color imager, which has a plurality of photodiodes, utilizes a layer of metal that is formed over the photodiodes. The metal layer has a plurality of different sized openings that lie vertically over the photodiodes to physically diffract, and thereby filter, the incident light that strikes the color imager.

摘要翻译： 具有多个光电二极管的彩色成像器利用形成在光电二极管上的金属层。 金属层具有多个不同尺寸的开口，其垂直地位于光电二极管上以物理衍射，从而过滤入射到彩色成像器的入射光。

公开(公告)号：US07479435B1

公开(公告)日：2009-01-20

申请号：US11007565

申请日：2004-12-08

申请人： Peter J. Hopper ,  Vladislav Vashchenko ,  Philipp Lindorfer ,  Andy Strachan

发明人： Peter J. Hopper ,  Vladislav Vashchenko ,  Philipp Lindorfer ,  Andy Strachan

IPC分类号： H01L29/788

CPC分类号： H01L21/26586 ,  H01L21/2652 ,  H01L21/823418 ,  H01L27/088 ,  H01L29/0847

摘要： A MOS transistor and subsurface collectors can be formed by using a hard mask and precisely varying the implant angle, rotation, dose, and energy. In this case, a particular atomic species can be placed volumetrically in a required location under the hard mask. The dopant can be implanted to form sub-silicon volumes of arbitrary shapes, such as pipes, volumes, hemispheres, and interconnects.

摘要翻译： 可以通过使用硬掩模并精确地改变植入角度，旋转，剂量和能量来形成MOS晶体管和地下收集器。 在这种情况下，特定的原子物质可以体积地放置在硬掩模下的所需位置。 可以将掺杂剂注入以形成任意形状的子硅体积，例如管道，体积，半球和互连。

公开(公告)号：US07394133B1

公开(公告)日：2008-07-01

申请号：US11216774

申请日：2005-08-31

申请人： Vladislav Vashchenko ,  Peter J. Hopper ,  Philipp Lindorfer

发明人： Vladislav Vashchenko ,  Peter J. Hopper ,  Philipp Lindorfer

IPC分类号： H01L29/72

CPC分类号： H01L27/0262 ,  H01L29/0692 ,  H01L29/7436 ,  H01L29/87

摘要： In an ESD protection structure, dual direction ESD protection is provided by forming an n-well isolation ring around an NMOS device so that the p-well in which the NMOS drain is formed is isolated from the underlying p-substrate by the n-well isolation ring. By forming the n-well isolation ring the p-n-p-n structure of an embedded SCR for reverse ESD protection is provided. The width of the n-well isolation ring and its spacing from the NMOS drain are adjusted to provide the desired SCR parameters.

摘要翻译： 在ESD保护结构中，通过在NMOS器件周围形成n阱隔离环来提供双向ESD保护，使得形成NMOS漏极的p阱通过n阱与下面的p衬底隔离 隔离环。 通过形成n阱隔离环，提供了用于反向ESD保护的嵌入式SCR的p-n-p-n结构。 调整n阱隔离环的宽度及其与NMOS漏极的间隔，以提供所需的SCR参数。

公开(公告)号：US07209503B1

公开(公告)日：2007-04-24

申请号：US10838671

申请日：2004-05-03

申请人： Peter J. Hopper ,  Philipp Lindorfer ,  Vladislav Vashchenko ,  Yuri Mirgorodski

发明人： Peter J. Hopper ,  Philipp Lindorfer ,  Vladislav Vashchenko ,  Yuri Mirgorodski

IPC分类号： H01S5/00

CPC分类号： H01L27/1446 ,  H01L27/146

摘要： An integrated circuit is powered by exposing conductive regions, such as the p+ source regions of the PMOS transistors that are formed to receive a supply voltage, to light energy from a light source. The conductive regions function as photodiodes that produce voltages on the conductive regions via the photovoltaic effect.

摘要翻译： 集成电路通过将形成为接收电源电压的PMOS晶体管的p +源极区域等导电区域暴露于来自光源的光能来供电。 导电区域用作通过光电效应在导电区域上产生电压的光电二极管。

公开(公告)号：US07113427B1

公开(公告)日：2006-09-26

申请号：US11076711

申请日：2005-03-09

申请人： Yuri Mirgorodski ,  Peter J. Hopper ,  Vladislav Vashchenko ,  Philipp Lindorfer

发明人： Yuri Mirgorodski ,  Peter J. Hopper ,  Vladislav Vashchenko ,  Philipp Lindorfer

IPC分类号： G11C16/04

CPC分类号： G11C11/5628 ,  G11C16/12 ,  G11C16/3459 ,  H01L27/115 ,  H01L29/7881

摘要： NVM cell for storing three levels of charge: one erased and two programmed states. The cell comprises a transistor structure providing a gate current versus gate voltage curve having a shape with a flat region or a second peak. To provide such a structure, one embodiment combines two parallel transistors having different threshold voltages, and another embodiment uses one transistor with variable doping. The gate current curve provides two programming zones. Programming the first state includes applying a voltage across a channel, ramping up a gate voltage in the first programming zone, followed by ramping it back down. Programming the second state comprises applying a voltage across a channel, ramping up a gate voltage past the first programming zone and into the second programming zone, followed by ramping it back down. Ramping the voltage back down may optionally be preceded by turning off the voltage across the channel.

摘要翻译： 用于存储三个电荷电平的NVM单元：一个擦除和两个编程状态。 该单元包括提供具有平坦区域或第二峰值的形状的栅极电流对栅极电压曲线的晶体管结构。 为了提供这样的结构，一个实施例组合了具有不同阈值电压的两个并联晶体管，另一实施例使用一个具有可变掺杂的晶体管 栅极电流曲线提供两个编程区域。 对第一状态进行编程包括在一个通道上施加电压，使第一个编程区中的栅极电压升高，然后将其向下斜坡。 对第二状态进行编程包括在通道上施加电压，将栅极电压升高到第一编程区并进入第二编程区，然后将其向下斜坡。 可以选择先将电压降低，然后关闭通道上的电压。

公开(公告)号：US07057174B1

公开(公告)日：2006-06-06

申请号：US10355904

申请日：2003-01-30

申请人： Peter J. Hopper ,  Philipp Lindorfer ,  Vladislav Vashchenko ,  Michael Mian

发明人： Peter J. Hopper ,  Philipp Lindorfer ,  Vladislav Vashchenko ,  Michael Mian

IPC分类号： H01L31/00

CPC分类号： H01L31/08

摘要： A photon detector capable of detecting gigahertz frequency optical signals utilizes a layer of photonic material that is formed adjacent to the coil of an inductor. When a pulsed light source is applied to the layer of photonic material, the photonic material generates eddy currents that alter the magnetic flux of the inductor. The signals can then be detected by detecting the change in the magnetic flux.

摘要翻译： 能够检测千兆赫兹光信号的光子检测器利用与电感线圈相邻形成的光子材料层。 当脉冲光源被施加到光子材料层时，光子材料产生改变电感器的磁通量的涡流。 然后可以通过检测磁通量的变化来检测信号。