摘要:
A dual inline memory module (DIMM) includes a card having a length of about 151.2 to about 151.5 millimeters, a plurality of individual local memory devices attached to the card, and a buffer device attached to the card, the buffer device configured for converting a packetized memory interface. The card includes at least 276 pins configured thereon.
摘要:
A dual inline memory module (DIMM) includes a card having a length of about 151.2 to about 151.5 millimeters, a plurality of individual local memory devices attached to the card, and a buffer device attached to the card, the buffer device configured for converting a packetized memory interface. The card includes at least 276 pins configured thereon including a plurality of high-speed bus interface pills arranged on said card for communicating with a plurality of high-speed busses. The high-speed bus interface pins associated with a single high-speed bus are located on one side of the card with respect to a midpoint of the length of the card, thus the pin assignments are defined such that the performance of the DIMM in a system is optimized for high frequency operation.
摘要:
A dual inline memory module (DIMM) includes a card having a length of about 151.2 to about 151.5 millimeters, a plurality of individual local memory devices attached to the card, and a buffer device attached to the card, the buffer device configured for converting a packetized memory interface. The card includes at least 276 pins configured thereon.
摘要:
Pseudo-differential drivers and receivers are used to communicate data signals between two or more IC chips. The data paths are aligned using programmable delay circuitry to de-skew each data path. A programmable reference generator is used to generate a reference voltage used by one or a group of receivers to detect the data signals. The reference voltage is adjustable using coarse as well as fine digitally controlled voltage increments. Test signals are sent from the driver to the receiver and the reference voltage is varied over its adjustable range using the coarse and fine adjustment controls while circuitry determines a measure of the detection timing jitter on successive transitions of the test signal. The operational value of the reference voltage is set to the value where the detection timing jitter is determined to be a minimum.
摘要:
An embodiment of the invention comprises a digital phase detector with substantially zero phase offset. The digital phase detector receives a clock signal and a reference clock signal and provides a phase indicator signal to identify whether the clock signal leads or lags the reference clock signal. An embodiment of the invention comprises a method that adds substantially zero phase offset in processing an input clock signal and a delayed clock signal to generate a control signal. The control signal is processed in a variable delay line to generate the delayed clock signal. In an embodiment, a first processor comprises a delay locked loop having a digital phase detector, the digital phase detector comprising a first differential sense amplifier cross-coupled to a second differential sense amplifier, the digital phase detector receiving a clock signal and generating one or more delayed clock signals, a control signal, and a gated data signal.
摘要:
An advanced memory having improved performance, reduced power and increased reliability. A memory device includes a memory array, a receiver for receiving a command and associated data, error control coding circuitry for performing error control checking on the received command, and data masking circuitry for preventing the associated data from being written to the memory array in response to the error control coding circuitry detecting an error in the received command. Another memory device includes a programmable preamble. Another memory device includes a fast exit self-refresh mode. Another memory device includes auto refresh function that is controlled by the characteristic device. Another memory device includes an auto refresh function that is controlled by a characteristic of the memory device.
摘要:
A voltage reference driver includes a voltage divider circuit with a voltage reference output node to output a voltage between a first voltage and a second voltage. The voltage reference driver also includes a first selectable impedance circuit coupled to a node at the first voltage and further coupled to the voltage reference output node, and a second selectable impedance circuit coupled to a node at the second voltage and further coupled to the voltage reference output node. Combinations of the first selectable impedance circuit and the second selectable impedance circuit are selectable such that a constant impedance is maintained at the voltage reference output node within a threshold value.
摘要:
According to one aspect of the present disclosure a method and technique for managing data transfer is disclosed. The method includes comparing, by a processor unit of a data processing system, data to be written to a memory subsystem to a stored data pattern and, responsive to determining that the data matches the stored data pattern, replacing the matching data with a pattern tag corresponding to the matching data pattern. The method also includes transmitting the pattern tag to the memory subsystem.
摘要:
An advanced memory having improved performance, reduced power and increased reliability. A memory device includes a memory array, a receiver for receiving a command and associated data, error control coding circuitry for performing error control checking on the received command, and data masking circuitry for preventing the associated data from being written to the memory array in response to the error control coding circuitry detecting an error in the received command. Another memory device includes a programmable preamble. Another memory device includes a fast exit self-refresh mode. Another memory device includes auto refresh function that is controlled by the characteristic device. Another memory device includes an auto refresh function that is controlled by a characteristic of the memory device.
摘要:
Multimodal memory controllers are disclosed that include: a transmitter having a first input signal line, a second input signal line, a first output signal line, a second output signal line, a first single-ended driver, a second single-ended driver, a differential transmitter, and a mode control signal line, the mode control signal line having asserted upon it a mode control signal, the transmitter configured to operate the output signal lines using the single-ended drivers at a first voltage when the mode control signal is a first value and to operate the output signal lines using the differential transmitter at a second voltage when the mode control signal is a second value, and the transmitter configured to protect the differential transmitter from the first voltage when the mode control signal is the first value.