公开(公告)号：US20120134051A1

公开(公告)日：2012-05-31

申请号：US13367353

申请日：2012-02-06

申请人： Moris Dovek ,  Glen Garfunkel ,  Po Kang Wang

发明人： Moris Dovek ,  Glen Garfunkel ,  Po Kang Wang

IPC分类号： G11B5/17

CPC分类号： G11B5/2657 ,  Y10T29/49021 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： As track densities increase, it becomes increasingly important, while writing in a given track, not to inadvertently write data in adjoining tracks. This problem has been overcome by limiting the width of material in the ABS plane to what it is at the write gap. The part of the lower pole that is wider than this is recessed back away from the ABS, thereby greatly reducing its magnetic influence on adjacent tracks. Four different embodiments of write heads that incorporate this notion are described together with a description of a general process for their manufacture.

公开(公告)号：US5614727A

公开(公告)日：1997-03-25

申请号：US473036

申请日：1995-06-06

申请人： Daniele Mauri ,  Wen Y. Lee ,  Cherngye Hwang ,  Glen Garfunkel

发明人： Daniele Mauri ,  Wen Y. Lee ,  Cherngye Hwang ,  Glen Garfunkel

IPC分类号： H01L29/24 ,  H01L29/267 ,  H01L29/45 ,  H01L29/861 ,  H01L29/12

CPC分类号： H01L29/45 ,  H01L29/242 ,  H01L29/267 ,  H01L29/861

摘要： A thin film diode and method of fabrication having large current capability and low-turn on voltage is provided as a switching or protective device against electrostatic discharge in integrated devices such as magnetoresistive sensors and the like. A first semiconductor thin film layer of NiO.sub.x having p type properties is disposed on an arbitrary substrate, such as alumina, glass, silicon dioxide, silicon and the like. A second semiconducting layer of tin oxide or indium oxide or other transparent oxide is joined to the first layer to form a p/n junction. In one method of fabrication, the p/n junction is formed in a sputtering process under a partial oxygen pressure to control the stoichiometry of the films. Gold and Gold Indium contacts are attached to the films to provide electrical contacts. The device is enclosed in a protective coating and connected in parallel with an electronic device subject to electrostatic discharge.

摘要翻译： 提供具有大电流能力和低匝导通电压的薄膜二极管和制造方法作为抵抗静电放电的开关或保护装置，诸如磁阻传感器等集成器件。 具有p型性质的NiOx的第一半导体薄膜层设置在任意的基板上，例如氧化铝，玻璃，二氧化硅，硅等。 氧化锡或氧化铟或其它透明氧化物的第二半导电层被接合到第一层以形成p / n结。 在一种制造方法中，在部分氧气压力下以溅射工艺形成p / n结，以控制膜的化学计量。 金和铟铟触点连接到电影以提供电触点。 该装置封装在保护涂层中，并与静电放电的电子设备并联连接。

公开(公告)号：US07173795B2

公开(公告)日：2007-02-06

申请号：US10731553

申请日：2003-12-09

申请人： Glen Garfunkel

发明人： Glen Garfunkel

IPC分类号： G11B5/127

CPC分类号： G11B5/3912 ,  G11B5/1278 ,  G11B5/399

摘要： Reader asymmetry control has become an important issue as track widths continue to shrink. This has been achieved by providing adaptive adjustment to the asymmetry of individual heads in the form of an additional permanent hard magnet, which may be internal or external to the head. This special ‘tuning’ magnet biases the shields and the sensor to achieve suitable asymmetry and/or amplification. Head bias adjustments may be done individually or in batch. Both the internal and the external magnet versions are described.

摘要翻译： 读者不对称控制已经成为轨道宽度不断缩小的重要问题。 这已经通过提供对于头部内部或外部的附加永磁硬磁体形式的各个头部的不对称性的适应性调节来实现。 这种特殊的“调谐”磁体将屏蔽和传感器偏置以实现合适的不对称和/或放大。 头偏差调整可以单独或批量完成。 内部和外部磁体都有描述。

公开(公告)号：US20130049747A1

公开(公告)日：2013-02-28

申请号：US13199183

申请日：2011-08-22

申请人： Yuchen Zhou ,  Joe Smyth ,  Min Li ,  Glen Garfunkel

发明人： Yuchen Zhou ,  Joe Smyth ,  Min Li ,  Glen Garfunkel

IPC分类号： G01R33/09 ,  B32B37/14 ,  B32B38/08 ,  B32B38/10 ,  B32B38/00

CPC分类号： G01R33/098 ,  B32B37/02 ,  B32B38/10 ,  B32B2307/212 ,  B32B2309/105 ,  B32B2457/08 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： An MR sensor, and a method for making it, is described. Part of the MR stack, from the free layer on up, is removed and then replaced by a flux guide. Additional stabilizing means for this flux guide are provided, either as hard bias or through exchange coupling.

摘要翻译： 描述MR传感器及其制造方法。 去除自由层上的MR堆叠的一部分，然后用助焊剂代替。 提供用于该磁通引导件的附加稳定装置，作为硬偏置或通过交换耦合。

公开(公告)号：US20050122632A1

公开(公告)日：2005-06-09

申请号：US10731553

申请日：2003-12-09

申请人： Glen Garfunkel

发明人： Glen Garfunkel

IPC分类号： G11B5/127 ,  G11B5/33 ,  G11B5/39

CPC分类号： G11B5/3912 ,  G11B5/1278 ,  G11B5/399

摘要： Reader asymmetry control has become an important issue as track widths continue to shrink. This has been achieved by providing adaptive adjustment to the asymmetry of individual heads by means of an additional permanent hard magnet, which may be internal or external to the head. This special ‘tuning’ magnet biases the shields and the sensor to achieve suitable asymmetry and/or amplification. Head bias adjustments may be done individually or in batch. Both the internal and the external magnet versions are described.

摘要翻译： 读者不对称控制已经成为轨道宽度不断缩小的重要问题。 这已经通过借助于可以在头部内部或外部的额外的永久硬磁体提供对各个头部的不对称性的适应性调整来实现。 这种特殊的“调谐”磁体将屏蔽和传感器偏置以实现合适的不对称和/或放大。 头偏差调整可以单独或批量完成。 内部和外部磁体都有描述。

公开(公告)号：US08881378B2

公开(公告)日：2014-11-11

申请号：US13199183

申请日：2011-08-22

申请人： Yuchen Zhou ,  Joe Smyth ,  Min Li ,  Glen Garfunkel

发明人： Yuchen Zhou ,  Joe Smyth ,  Min Li ,  Glen Garfunkel

IPC分类号： G11B5/127 ,  H04R31/00 ,  G01R33/09 ,  B32B38/10 ,  B32B37/02

CPC分类号： G01R33/098 ,  B32B37/02 ,  B32B38/10 ,  B32B2307/212 ,  B32B2309/105 ,  B32B2457/08 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method is described to improve performance of a magneto-resistive (MR) sensor under conditions of high areal density. The free layer is partially etched away, the removed material being replaced by a magnetic flux guide structure that reduces the free layer's demagnetization field. This in turn reduces the stripe height of the sensor so that the resolution and the read-back signal are enhanced without increasing noise and instability.

摘要翻译： 描述了一种在高密度密度条件下提高磁阻（MR）传感器性能的方法。 自由层被部分地蚀刻掉，去除的材料被减少自由层去磁场的磁通引导结构代替。 这又降低了传感器的条带高度，从而增强了分辨率和回读信号，而不增加噪声和不稳定性。

公开(公告)号：US07891081B2

公开(公告)日：2011-02-22

申请号：US10816040

申请日：2004-04-01

申请人： Glen Garfunkel

发明人： Glen Garfunkel

IPC分类号： G11B5/193

CPC分类号： G11B5/3109 ,  Y10T29/49021 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T428/1121 ,  Y10T428/115

摘要： A process is described for the fabrication of a magnetic read head in which contact between the pinned layer and the AFM is limited to their edges. The principal steps are to deposit an antiferromagnetic layer and to then pattern it into a pair of antiferromagnetic layers separated by no more than about 2 microns. A layer of magnetic material that lies between, and is in contact with, said antiferromagnetic layers is then deposited, following which the layer of magnetic material is magnetized.

摘要翻译： 描述了制造磁读头的过程，其中被钉扎层和AFM之间的接触被限制到它们的边缘。 主要步骤是沉积反铁磁性层，然后将其图案化成一对不超过约2微米的反铁磁层。 然后沉积位于所述反铁磁性层之间并与其接触的磁性材料层，随后磁性材料层被磁化。

公开(公告)号：US20050225906A1

公开(公告)日：2005-10-13

申请号：US10816040

申请日：2004-04-01

申请人： Glen Garfunkel

发明人： Glen Garfunkel

IPC分类号： G11B5/127 ,  G11B5/31

CPC分类号： G11B5/3109 ,  Y10T29/49021 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T428/1121 ,  Y10T428/115

摘要： A magnetic read head is described in which contact between the pinned layer and the AFM is limited to their edges. This still allows the pinned layer to be effectively pinned, but without the shunting effect of the AFM layer. Both TSV and BSV structures are disclosed as well as processes for their manufacture.

摘要翻译： 描述了磁性读取头，其中被钉扎层和AFM之间的接触被限制到它们的边缘。 这仍然允许固定层被有效地固定，但是没有AFM层的分流效应。 公开了TSV和BSV结构以及其制造方法。