利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

139 条记录 (耗时 0.042 秒)

    MEMORY CELL WITH RADIAL BARRIER
    21.
    发明申请
    MEMORY CELL WITH RADIAL BARRIER 有权
    带有径向障碍物的记忆体

    公开(公告)号：US20120061783A1

    公开(公告)日：2012-03-15

    申请号：US13278431

    申请日：2011-10-21

    申请人： Paul E. Anderson ,  Song S. Xue

    发明人： Paul E. Anderson ,  Song S. Xue

    IPC分类号： H01L29/82

    CPC分类号： H01L43/08 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/1143

    摘要： Magnetic tunnel junction cells and methods of making magnetic tunnel junction cells that include a radially protective layer extending proximate at least the ferromagnetic free layer of the cell. The radially protective layer can be specifically chosen in thickness, deposition method, material composition, and/or extent along the cell layers to enhance the effective magnetic properties of the free layer, including the effective coercivity, effective magnetic anisotropy, effective dispersion in magnetic moment, or effective spin polarization.

    摘要翻译： 磁性隧道结电池和制造磁性隧道结电池的方法，其包括在电池的至少铁磁性自由层附近延伸的径向保护层。 径向保护层可以沿着电池层的厚度，沉积方法，材料组成和/或程度具体选择，以增强自由层的有效磁性，包括有效的矫顽力，有效的磁各向异性，磁矩中的有效分散 ，或有效的自旋极化。

    Magnetic sensing device including a sense enhancing layer
    22.
    发明授权
    Magnetic sensing device including a sense enhancing layer 有权
    磁感测装置包括感应增强层

    公开(公告)号：US08091209B1

    公开(公告)日：2012-01-10

    申请号：US11866769

    申请日：2007-10-03

    申请人： Zheng Gao ,  Dimitar V. Dimitrov ,  Song S. Xue

    发明人： Zheng Gao ,  Dimitar V. Dimitrov ,  Song S. Xue

    IPC分类号： G11B5/127 ,  H04R31/00

    CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  Y10T29/49043 ,  Y10T29/49044

    摘要： A magnetic sensor includes a sensor stack having a first magnetic portion, a second magnetic portion, and a barrier layer between the first magnetic portion and the second magnetic portion. The first magnetic portion and/or the second magnetic portion comprises a multilayer structure including a first magnetic layer having a positive magnetostriction adjacent to the barrier layer, a second magnetic layer, and an intermediate layer between the first magnetic layer and the second magnetic layer. The magnetic sensor exhibits a magnetoresistive ratio of at least about 62% with a resistance-area (RA) product of about 0.45 Ω·μm2.

    摘要翻译： 磁传感器包括具有在第一磁性部分和第二磁性部分之间的第一磁性部分，第二磁性部分和阻挡层的传感器堆叠。 第一磁性部分和/或第二磁性部分包括多层结构，其包括具有与阻挡层相邻的正磁致伸缩的第一磁性层，第二磁性层以及第一磁性层和第二磁性层之间的中间层。 磁传感器表现出至少约62％的阻磁比，电阻面积（RA）乘积约0.45＆OHgr·μm2。

    Write verify method for resistive random access memory
    23.
    发明授权
    Write verify method for resistive random access memory 失效
    电阻随机存取存储器的写验证方法

    公开(公告)号：US08059450B2

    公开(公告)日：2011-11-15

    申请号：US12899646

    申请日：2010-10-07

    申请人： Haiwen Xi ,  Song S. Xue

    发明人： Haiwen Xi ,  Song S. Xue

    IPC分类号： G11C11/00

    CPC分类号： G11C13/0069 ,  G11C11/5664 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/0064 ,  G11C2013/0073 ,  G11C2211/5621 ,  G11C2213/31 ,  G11C2213/32

    摘要： Write verify methods for resistance random access memory (RRAM) are provided. The methods include applying a reset operation voltage pulse across a RRAM cell to change a resistance of the RRAM cell from a low resistance state to a high resistance state. Then the method includes applying a forward resetting voltage pulse across the RRAM cell if the RRAM cell has a high resistance state resistance value less than a selected lower resistance limit value. This step is repeated until the high resistance state resistance value is greater than the lower resistance limit value. The method also includes applying a reverse resetting voltage pulse across the RRAM cell if the RRAM cell has a high resistance state resistance values is greater than a selected upper resistance limit value. The reverse resetting voltage pulse has a second polarity being opposite the first polarity. This step is repeated until all the high resistance state resistance value is less than the upper resistance limit value.

    摘要翻译： 提供了电阻随机存取存储器（RRAM）的写验证方法。 所述方法包括在RRAM单元之间施加复位操作电压脉冲，以将RRAM单元的电阻从低电阻状态改变为高电阻状态。 然后，该方法包括如果RRAM单元具有小于所选择的较低电阻极限值的高电阻状态电阻值，则在RRAM单元之间施加正向复位电压脉冲。 重复该步骤直到高电阻状态电阻值大于下限电阻值。 该方法还包括如果RRAM单元具有大于所选上限电阻值的高电阻状态电阻值，则跨越RRAM单元施加反向复位电压脉冲。 反向复位电压脉冲具有与第一极性相反的第二极性。 重复该步骤，直到所有高电阻状态电阻值小于上限电阻值。

    Spin-Torque Bit Cell With Unpinned Reference Layer and Unidirectional Write Current
    24.
    发明申请
    Spin-Torque Bit Cell With Unpinned Reference Layer and Unidirectional Write Current 有权
    具有未引脚参考层和单向写入电流的自旋转矩位单元

    公开(公告)号：US20110205788A1

    公开(公告)日：2011-08-25

    申请号：US13100953

    申请日：2011-05-04

    申请人： Daniel Seymour Reed ,  Yong Lu ,  Song S. Xue ,  Dimitar V. Dimitrov ,  Paul E. Anderson

    发明人： Daniel Seymour Reed ,  Yong Lu ,  Song S. Xue ,  Dimitar V. Dimitrov ,  Paul E. Anderson

    IPC分类号： G11C11/15

    CPC分类号： H01F10/329 ,  B82Y25/00 ,  G01R33/098 ,  G01R33/1284 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254

    摘要： Method and apparatus for using a uni-directional write current to store different logic states in a non-volatile memory cell, such as a modified STRAM cell. In some embodiments, the memory cell has an unpinned ferromagnetic reference layer adjacent a cladded conductor, a ferromagnetic storage layer and a tunneling barrier between the reference layer and the storage layer. Passage of a current along the cladded conductor induces a selected magnetic orientation in the reference layer, which is transferred through the tunneling barrier for storage by the storage layer. Further, the orientation of the applying step is provided by a cladding layer adjacent a conductor along which a current is passed and the current induces a magnetic field in the cladding layer of the selected magnetic orientation.

    摘要翻译： 用于使用单向写入电流来存储非易失性存储器单元（诸如修改的STRAM单元）中的不同逻辑状态的方法和装置。 在一些实施例中，存储器单元具有与包层导体相邻的未固定的铁磁参考层，铁磁存储层和参考层与存储层之间的隧道势垒。 沿着包层导体的电流的通过在参考层中引入选定的磁取向，该参考层通过隧道势垒传递，以通过存储层进行存储。 此外，施加步骤的取向由邻近导体的包层提供，电流通过该导体，并且电流在所选择的磁方向的包层中感应出磁场。

    Spin-torque bit cell with unpinned reference layer and unidirectional write current
    26.
    发明授权
    Spin-torque bit cell with unpinned reference layer and unidirectional write current 有权
    具有未固定参考层和单向写入电流的自旋转矩位单元

    公开(公告)号：US07940592B2

    公开(公告)日：2011-05-10

    申请号：US12326314

    申请日：2008-12-02

    申请人： Daniel Seymour Reed ,  Yon Lu ,  Song S. Xue ,  Dimitar V. Dimitrov ,  Paul E. Anderson

    发明人： Daniel Seymour Reed ,  Yon Lu ,  Song S. Xue ,  Dimitar V. Dimitrov ,  Paul E. Anderson

    IPC分类号： G11C7/00

    CPC分类号： H01F10/329 ,  B82Y25/00 ,  G01R33/098 ,  G01R33/1284 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254

    摘要： Method and apparatus for using a uni-directional write current to store different logic states in a non-volatile memory cell, such as a modified STRAM cell. In some embodiments, the memory cell has an unpinned ferromagnetic reference layer adjacent a cladded conductor, a ferromagnetic storage layer and a tunneling barrier between the reference layer and the storage layer. Passage of a current along the cladded conductor induces a selected magnetic orientation in the reference layer, which is transferred through the tunneling barrier for storage by the storage layer. Further, the orientation of the applying step is provided by a cladding layer adjacent a conductor along which a current is passed and the current induces a magnetic field in the cladding layer of the selected magnetic orientation.

    摘要翻译： 用于使用单向写入电流来存储非易失性存储器单元（诸如修改的STRAM单元）中的不同逻辑状态的方法和装置。 在一些实施例中，存储器单元具有与包层导体相邻的未固定的铁磁参考层，铁磁存储层和参考层与存储层之间的隧道势垒。 沿着包层导体的电流的通过在参考层中引入选定的磁取向，该参考层通过隧道势垒传递，以通过存储层进行存储。 此外，施加步骤的取向由邻近导体的包层提供，电流通过该导体，并且电流在所选择的磁方向的包层中感应出磁场。

    Magnetic Storage Element Responsive to Spin Polarized Current
    28.
    发明申请
    Magnetic Storage Element Responsive to Spin Polarized Current 有权
    响应于旋转极化电流的磁存储元件

    公开(公告)号：US20110069537A1

    公开(公告)日：2011-03-24

    申请号：US12958106

    申请日：2010-12-01

    申请人： Kaizhong Gao ,  Haiwen Xi ,  Yiming Shi ,  Song S. Xue ,  Sining Mao

    发明人： Kaizhong Gao ,  Haiwen Xi ,  Yiming Shi ,  Song S. Xue ,  Sining Mao

    IPC分类号： G11C11/16 ,  G11C11/15

    CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673

    摘要： The present invention relates to a memory cell including a first reference layer having a first magnetization with a first magnetization direction and a second reference layer having a second magnetization with a second magnetization direction substantially perpendicular to the first magnetization direction. A storage layer is disposed between the first reference layer and second reference layer and has a third magnetization direction about 45° from the first magnetization direction and about 135° from the second magnetization direction when the memory cell is in a first data state, and a fourth magnetization direction opposite the third magnetization direction when the memory cell is in a second data state.

    摘要翻译： 本发明涉及包括具有第一磁化方向的第一磁化的第一参考层和具有基本上垂直于第一磁化方向的第二磁化方向的第二磁化的第二参考层的存储单元。 存储层设置在第一参考层和第二参考层之间，并且当存储单元处于第一数据状态时，具有从第一磁化方向大约45°的第三磁化方向和从第二磁化方向开始的大约135°的存储层， 当存储单元处于第二数据状态时与第三磁化方向相反的第四磁化方向。

    MRAM cells including coupled free ferromagnetic layers for stabilization
    29.
    发明授权
    MRAM cells including coupled free ferromagnetic layers for stabilization 有权
    MRAM单元包括用于稳定的耦合的自由铁磁层

    公开(公告)号：US07880209B2

    公开(公告)日：2011-02-01

    申请号：US12248257

    申请日：2008-10-09

    申请人： Haiwen Xi ,  Kaizhong Gao ,  Dimitar V. Dimitrov ,  Song S. Xue

    发明人： Haiwen Xi ,  Kaizhong Gao ,  Dimitar V. Dimitrov ,  Song S. Xue

    IPC分类号： H01L29/82

    CPC分类号： H01L43/08 ,  G11C11/16 ,  G11C11/1675 ,  Y10T428/1114 ,  Y10T428/1121

    摘要： A free ferromagnetic data storage layer of an MRAM cell is coupled to a free ferromagnetic stabilization layer, which stabilization layer is directly electrically coupled to a contact electrode, on one side, and is separated from the free ferromagnetic data storage layer, on an opposite side, by a spacer layer. The spacer layer provides for the coupling between the two free layers, which coupling is one of: a ferromagnetic coupling and an antiferromagnetic coupling.

    摘要翻译： MRAM单元的自由铁磁数据存储层耦合到自由铁磁稳定层，该稳定层在一侧直接电耦合到接触电极，并在相对侧与自由铁磁数据存储层分离 ，通过间隔层。 间隔层提供两个自由层之间的耦合，该耦合是以下之一：铁磁耦合和反铁磁耦合。

    Band engineered high-K tunnel oxides for non-volatile memory
    30.
    发明授权
    Band engineered high-K tunnel oxides for non-volatile memory 有权
    用于非易失性存储器的带式工程高K隧道氧化物

    公开(公告)号：US07875923B2

    公开(公告)日：2011-01-25

    申请号：US12120715

    申请日：2008-05-15

    申请人： Wei Tian ,  Insik Jin ,  Dimitar V. Dimitrov ,  Song S. Xue

    发明人： Wei Tian ,  Insik Jin ,  Dimitar V. Dimitrov ,  Song S. Xue

    IPC分类号： H01L29/788

    CPC分类号： H01L29/792

    摘要： A non-volatile memory cell that has a charge source region, a charge storage region, and a crested tunnel barrier layer that has a potential energy profile which peaks between the charge source region and the charge storage region. The tunnel barrier layer has multiple high-K dielectric materials, either as individual layers or as compositionally graded materials.

    摘要翻译： 具有电荷源区域，电荷存储区域和具有在电荷源区域和电荷存储区域之间峰值的势能分布的波峰隧道势垒层的非易失性存储单元。 隧道势垒层具有多个高K电介质材料，无论是单独层还是成分分级材料。