公开(公告)号：US20110017883A1

公开(公告)日：2011-01-27

申请号：US12895994

申请日：2010-10-01

Applicant: Klaus Erdmann ,  George May ,  Dirk Schumann

Inventor： Klaus Erdmann ,  George May ,  Dirk Schumann

IPC: F16M11/24

CPC classification number: A47L15/4253 ,  D06F39/125 ,  F16M7/00

Abstract: An apparatus for setting the spacing of a free standing range relative to a floor includes a base component for contacting the floor, a threaded element, and a winding follower. The winding follower extends into the helical recess of the threaded element such that the winding follower travels progressively further along the helical recess of the threaded element. A blocking member engages the winding follower during travel of the winding follower along the helical recess of the threaded element to resist a disengagement movement.

Abstract translation: 用于设定相对于地板的自由站立范围的间隔的装置包括用于接触地板的基座部件，螺纹元件和绕组从动件。 绕组从动件延伸到螺纹元件的螺旋凹槽中，使得绕组从动件沿螺纹元件的螺旋凹槽进一步进一步移动。 在绕线从动件沿着螺纹元件的螺旋凹槽行进期间，阻挡构件接合绕组从动件以抵抗分离运动。

公开(公告)号：US07084043B2

公开(公告)日：2006-08-01

申请号：US10792691

申请日：2004-03-05

Applicant: Albert Birner ,  Steffen Breuer ,  Matthias Goldbach ,  Joern Luetzen ,  Dirk Schumann

Inventor： Albert Birner ,  Steffen Breuer ,  Matthias Goldbach ,  Joern Luetzen ,  Dirk Schumann

IPC: H01L21/76 ,  H01L21/31

CPC classification number: H01L27/10864 ,  H01L27/10867 ,  H01L27/1203

Abstract: A method for producing a silicon-on-insulator layer structure on a silicon surface with any desired geometry can locally produce the silicon-on-insulator structure. The method includes formation of mesopores in the silicon surface region, oxidation of the mesopore surface to form silicon oxide and rib regions from silicon in single-crystal form; and execution of a selective epitaxy process that that silicon grows on the uncovered rib regions, selectively with respect to the silicon oxide regions. Rib regions remain in place between adjacent mesopores, this step being ended as soon as a predetermined minimum silicon wall thickness of the rib regions is reached, the uncovering of the rib regions, which are arranged at the end remote from the semiconductor substrate between adjacent mesopores. The method can be used to fabricate a vertical transistor and a memory cell having a select transistor of this type.

Abstract translation: 在任何期望的几何形状的硅表面上制造绝缘体上硅层结构的方法可以局部地产生绝缘体上硅结构。 该方法包括在硅表面区域形成中孔，中孔表面的氧化形成硅单晶的硅氧化物和肋状区域; 以及执行选择性外延工艺，其中硅在相对于氧化硅区域选择性地在未覆盖的肋区域上生长。 肋区域保持在相邻的中孔之间的适当位置，一旦达到肋区域的预定的最小硅壁厚度，则该步骤结束，肋区域的露出，其布置在远离半导体衬底的相邻介孔之间的端部 。 该方法可用于制造具有这种类型的选择晶体管的垂直晶体管和存储单元。

公开(公告)号：US06977405B2

公开(公告)日：2005-12-20

申请号：US10792742

申请日：2004-03-05

Applicant: Jörn Lützen ,  Bernd Goebel ,  Dirk Schumann ,  Martin Gutsche ,  Harald Seidl ,  Martin Popp ,  Alfred Kersch ,  Werner Steinhögl

Inventor： Jörn Lützen ,  Bernd Goebel ,  Dirk Schumann ,  Martin Gutsche ,  Harald Seidl ,  Martin Popp ,  Alfred Kersch ,  Werner Steinhögl

IPC: H01L21/8242 ,  H01L27/108

CPC classification number: H01L27/10864 ,  H01L27/10841 ,  H01L27/10867 ,  H01L27/10891

Abstract: In order to fabricate a semiconductor memory, a trench capacitor is arranged in a first trench. Beside the first trench, a first longitudinal trench and, parallel on the other side of the first trench, a second longitudinal trench are arranged in the substrate. A first spacer word line is arranged in the first longitudinal trench and a second spacer word line is arranged in the second longitudinal trench. There are arranged in the first trench connecting webs between the first spacer word line and the second spacer word line which have a thickness which, in the direction of the first spacer word line, is less than half the width of the first trench in the direction of the first spacer word line.

Abstract translation: 为了制造半导体存储器，在第一沟槽中布置有沟槽电容器。 在第一沟槽的旁边，在衬底中布置有第一纵向沟槽，并且在第一沟槽的另一侧平行的第二纵向沟槽。 第一间隔字线布置在第一纵向沟槽中，第二间隔字线布置在第二纵向沟槽中。 布置在第一沟槽中，连接腹板之间的第一隔离物字线和第二隔离物字线之间的厚度，该厚度在第一隔离物字线的方向上小于第一沟槽的方向上的宽度的一半 的第一个间隔字线。

公开(公告)号：US06720513B2

公开(公告)日：2004-04-13

申请号：US10384997

申请日：2003-03-10

Applicant: Reinhard Fleissner ,  Ernst Huber ,  Dirk Schumann

Inventor： Reinhard Fleissner ,  Ernst Huber ,  Dirk Schumann

IPC: H01H308

CPC classification number: G05G1/08 ,  H01H3/08 ,  H01H3/10 ,  H01H2003/085 ,  H01H2003/105 ,  H01H2229/042

Abstract: A rotary switch configuration for a household appliance includes a rotary knob seated in a cutout in an appliance panel and firmly connected to an actuating shaft so as to rotate with it but move axially, the actuating shaft transmitting the rotary movement of the rotary knob to a switching shaft of a switching unit mounted behind the appliance panel. Exact and wobble-free guidance of the rotary knob is achieved by the actuating shaft being rotatably mounted on the appliance panel by a bearing device.

Abstract translation: 家用电器的旋转开关配置包括：安置在电器面板中的切口中的旋钮，并且牢固地连接到致动轴上以便随其旋转但是沿轴向移动，致动轴将旋钮的旋转运动传递到 安装在电器面板后面的开关单元的开关轴。 通过由轴承装置可旋转地安装在电器面板上的致动轴来实现旋钮的精确和无摇摆的引导。

公开(公告)号：US06387766B1

公开(公告)日：2002-05-14

申请号：US09429834

申请日：1999-10-29

Applicant: Dirk Schumann

Inventor： Dirk Schumann

IPC: H01L21336

CPC classification number: H01L29/6659 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/823418 ,  H01L27/088 ,  H01L29/1033

Abstract: In an integrated circuit with low threshold voltage differences of the transistors and a manufacturing process for such an integrated circuit, MOS transistors of different lengths but having threshold voltages that are substantially the same are made by avoiding dopant peaks at the channel edges by an angled nitrogen implantation, so that implantation paths at those edges are occupied by nitrogen atoms.

Abstract translation: 在晶体管具有低阈值电压差的集成电路和用于这种集成电路的制造工艺中，具有不同长度但具有基本相同的阈值电压的MOS晶体管是通过避免在沟道边缘处的倾斜氮 使得这些边缘处的注入路径被氮原子占据。