Abstract:
An object of the present invention is to improve a substrate processing apparatus using the CARE method.The present invention provides a substrate processing apparatus for polishing a processing target region of a substrate by bringing the substrate and a catalyst into contact with each other in the presence of processing liquid. The substrate processing apparatus includes a substrate holding unit configured to hold the substrate, a catalyst holding unit configured to hold the catalyst, and a driving unit configured to move the substrate holding unit and the catalyst holding unit relative to each other with the processing target region of the substrate and the catalyst kept in contact with each other. The catalyst is smaller than the substrate.
Abstract:
A polishing is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. The polishing apparatus includes a polishing table having a polishing surface, a substrate holding apparatus configured to hold the substrate and to press the substrate against the polishing surface, and a controller. The substrate holding apparatus includes an elastic membrane configured to forma substrate holding surface which is brought into contact with the substrate, a carrier provided above the elastic membrane, at least one pressure chamber formed between the elastic membrane and the carrier, and an infrared light detector configured to measure thermal energy from the elastic membrane. The controller calculates an estimate value of a temperature of the elastic membrane using a measured value of the infrared light detector.
Abstract:
A polishing apparatus capable of achieving a highly-precise polishing result is disclosed. The polishing apparatus includes an in-line film-thickness measuring device configured to measure a film thickness of the substrate in a stationary state, and an in-situ spectral film-thickness monitor having a film thickness sensor disposed in a polishing table, the in-situ spectral film-thickness monitor being configured to subtract an initial film thickness, measured by the in-situ spectral film-thickness monitor before polishing of the substrate, from an initial film thickness, measured by the in-line film-thickness measuring device before polishing of the substrate, to determine a correction value, add the correction value to a film thickness that is measured when the substrate is being polished to obtain a monitoring film thickness, and monitor a progress of polishing of the substrate based on the monitoring film thickness.
Abstract:
There is provided an elastic membrane which can uniformly reduce deformation (elongation) of its contact portion, having a contact surface for contact with a substrate, along the contact surface in substantially the entire area of the contact portion from the center to the periphery. The elastic membrane includes a contact portion having a contact surface for contact with the substrate; a first peripheral wall portion coupled to the peripheral end of the contact portion and extending upwardly; and a second peripheral wall portion located on the inside of the first peripheral wall portion, coupled to the contact portion and extending upwardly, and defining a first chamber on the outer side thereof and a second chamber on the inner side thereof. In the elastic membrane, substantially the entire area of the contact portion is reinforced with a reinforcing member having a higher rigidity than the elastic membrane.