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公开(公告)号：US08179033B2
公开(公告)日：2012-05-15
申请号：US12439753
申请日：2007-09-12
申请人： Reiko Taniguchi , Masayuki Ono , Shogo Nasu , Eiichi Satoh , Toshiyuki Aoyama , Kenji Hasegawa , Masaru Odagiri , Masato Murayama
发明人： Reiko Taniguchi , Masayuki Ono , Shogo Nasu , Eiichi Satoh , Toshiyuki Aoyama , Kenji Hasegawa , Masaru Odagiri , Masato Murayama
IPC分类号： H05B33/00
CPC分类号： G09G3/3233 , G09G2300/0842 , G09G2310/0262 , H01L27/1214 , H01L27/124
摘要： A display is provided with: a substrate; a plurality of parallel scan wires extending over the substrate in a first direction; a plurality of parallel data wires extending parallel to a surface of the substrate in a second direction perpendicular to the first direction; at least one switching element per intersection between the scan wires and the data wires; pixel electrodes connected to the switching elements; at least one phosphor layer provided above the pixel electrodes; and common electrodes provided above the phosphor layer, and the phosphor layer has a polycrystalline structure made of a first semiconductor material and a second semiconductor material segregated between grain boundaries in the polycrystalline structure, which is different from the first semiconductor material.
摘要翻译： 显示器具有：基板; 在第一方向上在所述基板上延伸的多条平行扫描线; 在与第一方向垂直的第二方向上平行于基板的表面延伸的多条平行数据线; 扫描线和数据线之间每个交叉点至少有一个开关元件; 连接到开关元件的像素电极; 设置在所述像素电极上方的至少一个荧光体层; 以及设置在荧光体层上方的公共电极，并且所述荧光体层具有由与所述第一半导体材料不同的多晶结构中的晶界分离的由第一半导体材料和第二半导体材料构成的多晶体结构。
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公开(公告)号：US07981710B2
公开(公告)日：2011-07-19
申请号：US12058242
申请日：2008-03-28
申请人： Eiichi Satoh , Shogo Nasu , Reiko Taniguchi , Masayuki Ono , Masaru Odagiri
发明人： Eiichi Satoh , Shogo Nasu , Reiko Taniguchi , Masayuki Ono , Masaru Odagiri
IPC分类号： H01L21/00
摘要： A light emitting device of the invention includes an electron transporting layer, a hole transporting layer provided mutually facing the electron transporting layer with a distance between the hole transporting layer and the electron transporting layer, a phosphor layer having a layer of a plurality of semiconductor fine particles sandwiched between the electron transporting layer and the hole transporting layer, a first electrode provided facing the electron transporting layer and connected electrically, and a second electrode provided facing the hole transporting layer and connected electrically: in which the semiconductor fine particles composing the phosphor layer have a p-type part and an n-type part inside of the particles and have a pn-junction in the interface of the p-type part and the n-type part and are arranged in a manner that the p type part is partially brought into contact with the hole transporting layer and at the same time, the n type part is partially brought into contact with the electron transporting layer.
摘要翻译： 本发明的发光器件包括电子传输层，与电子传输层相对设置的空穴传输层，其间具有空穴传输层和电子传输层之间的距离，具有多个半导体精细层的荧光体层 夹在电子传输层和空穴传输层之间的颗粒，与电子传输层相对设置并且电连接的第一电极和面向空穴传输层设置并且电连接的第二电极，其中构成磷光体层的半导体细颗粒 在颗粒内部具有p型部分和n型部分，并且在p型部分和n型部分的界面中具有pn结，并且以p型部分部分地布置 与空穴传输层接触，同时将n型部分部分地带入c 与电子传输层成反比。
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公开(公告)号：US07868351B2
公开(公告)日：2011-01-11
申请号：US12058374
申请日：2008-03-28
申请人： Reiko Taniguchi , Masayuki Ono , Shogo Nasu , Eiichi Satoh , Masaru Odagiri
发明人： Reiko Taniguchi , Masayuki Ono , Shogo Nasu , Eiichi Satoh , Masaru Odagiri
IPC分类号： H01L33/08
摘要： A light emitting device includes a pair of electrodes, wherein at least one electrode is transparent or semi-transparent, and an phosphor layer provided between the pair of electrodes, wherein the phosphor layer includes a layer having nitride semiconductor particles, and wherein the nitride semiconductor particles have metal nano structures precipitated in grain boundaries between the nitride semiconductor particles.
摘要翻译： 发光器件包括一对电极，其中至少一个电极是透明或半透明的，以及设置在所述一对电极之间的荧光体层，其中所述荧光体层包括具有氮化物半导体颗粒的层，并且其中所述氮化物半导体 颗粒具有在氮化物半导体颗粒之间的晶界中沉淀的金属纳米结构。
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公开(公告)号：US20080237623A1
公开(公告)日：2008-10-02
申请号：US12058374
申请日：2008-03-28
申请人： Reiko Taniguchi , Masayuki Ono , Shogo Nasu , Eiichi Satoh , Masaru Odagiri
发明人： Reiko Taniguchi , Masayuki Ono , Shogo Nasu , Eiichi Satoh , Masaru Odagiri
IPC分类号： H01L33/00
摘要： A light emitting device includes a pair of electrodes, wherein at least one electrode is transparent or semi-transparent, and an phosphor layer provided between the pair of electrodes, wherein the phosphor layer includes a layer having nitride semiconductor particles, and wherein the nitride semiconductor particles have metal nano structures precipitated in grain boundaries between the nitride semiconductor particles.
摘要翻译： 发光器件包括一对电极，其中至少一个电极是透明或半透明的，以及设置在所述一对电极之间的荧光体层，其中所述荧光体层包括具有氮化物半导体颗粒的层，并且其中所述氮化物半导体 颗粒具有在氮化物半导体颗粒之间的晶界中沉淀的金属纳米结构。
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公开(公告)号：US08178896B2
公开(公告)日：2012-05-15
申请号：US12920573
申请日：2009-02-24
申请人： Takayuki Shimamura , Masayuki Ono , Reiko Taniguchi , Eiichi Satoh , Masato Murayama , Masaru Odagiri
发明人： Takayuki Shimamura , Masayuki Ono , Reiko Taniguchi , Eiichi Satoh , Masato Murayama , Masaru Odagiri
IPC分类号： H01L33/32
CPC分类号： H01L33/24 , C09K11/025 , C09K11/642 , H01L33/08
摘要： A light emitting device includes a pair of electrodes facing to each other and a phosphor layer which is sandwiched between the pair of electrodes and includes phosphor particles placed therein. The phosphor particles include an n-type nitride semiconductor part and a p-type nitride semiconductor part, the n-type nitride semiconductor part and the p-type nitride semiconductor part are made of respective single crystals having wurtzite-type crystal structures having c axes parallel with each other, and the phosphor particles include an insulation layer provided to overlie one end surface out of their end surfaces perpendicular to the c axes.
摘要翻译： 发光器件包括彼此面对的一对电极和夹在一对电极之间并且包括放置在其中的荧光体颗粒的荧光体层。 荧光体颗粒包括n型氮化物半导体部件和p型氮化物半导体部件，n型氮化物半导体部件和p型氮化物半导体部件由具有c轴的纤锌矿型晶体结构的各自的单晶制成 彼此平行，并且荧光体颗粒包括设置成覆盖垂直于c轴的端表面之外的一个端面的绝缘层。
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公开(公告)号：US20110156080A1
公开(公告)日：2011-06-30
申请号：US13061052
申请日：2009-02-24
IPC分类号： H01L33/58
摘要： A light emitting device is provided with: a pair of an anode and a cathode that are opposed to each other; and a phosphor layer, composed of a plurality of phosphor particles, that is sandwiched between the paired anode and cathode, from direction that is perpendicular to main surfaces of the anode and the cathode, and in this structure, each phosphor particle is a nitride semiconductor phosphor particle having a wurtzite crystal structure that contains an n-type nitride semiconductor portion and a p-type nitride semiconductor portion, with the n-type nitride semiconductor portion being made in contact with the cathode and the p-type nitride semiconductor portion being made in contact with the anode, and the n-type nitride semiconductor portion and the p-type nitride semiconductor portion have the common c-axe in the respective crystal structures thereof made in parallel with each other, with the n-type nitride semiconductor portion and the p-type nitride semiconductor portion being made in contact with each other on a plane in parallel with the c-axe.
摘要翻译： 发光器件设置有：一对彼此相对的阳极和阴极; 以及由垂直于阳极和阴极的主表面的方向夹在一对阳极和阴极之间的由多个荧光体颗粒组成的荧光体层，并且在该结构中，每个荧光体颗粒是氮化物半导体 具有含有n型氮化物半导体部分和p型氮化物半导体部分的纤锌矿型晶体结构的荧光体颗粒，其中使n型氮化物半导体部分与阴极接触并且p型氮化物半导体部分被制成 与n型氮化物半导体部分和n型氮化物半导体部分和n型氮化物半导体部分和/或p型氮化物半导体部分在其各自的晶体结构中具有共同的c-ax， p型氮化物半导体部分在与c-ax平行的平面上彼此接触。
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公开(公告)号：US20110175098A1
公开(公告)日：2011-07-21
申请号：US13120820
申请日：2009-04-30
CPC分类号： H01L33/18 , B82Y20/00 , H01L27/3244 , H01L27/3281 , H01L51/502
摘要： A light emitting element includes: a first electrode and a second electrode provided as being opposed each other, at least one of the first electrode and the second electrode being transparent or translucent; and a phosphor layer sandwiched between the first electrode and the second electrode, from a direction that is perpendicular to main surfaces of the first and second electrodes. In this structure, the phosphor layer includes: a plurality of phosphor particles that are disposed within a plane of the phosphor layer; and a first and second insulating guides that sandwich two sides of each of the phosphor particles from a direction that is in parallel with the surface of the phosphor layer.
摘要翻译： 发光元件包括：第一电极和设置为彼此相对的第二电极，第一电极和第二电极中的至少一个是透明或半透明的; 以及从垂直于第一和第二电极的主表面的方向夹在第一电极和第二电极之间的磷光体层。 在该结构中，荧光体层包括：配置在荧光体层的平面内的多个荧光体粒子; 以及从与荧光体层的表面平行的方向夹着每个荧光体粒子的两侧的第一和第二绝缘引导件。
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公开(公告)号：US20110012167A1
公开(公告)日：2011-01-20
申请号：US12920573
申请日：2009-02-24
申请人： Takayuki Shimamura , Masayuki Ono , Reiko Taniguchi , Eiichi Satoh , Masato Murayama , Masaru Odagiri
发明人： Takayuki Shimamura , Masayuki Ono , Reiko Taniguchi , Eiichi Satoh , Masato Murayama , Masaru Odagiri
IPC分类号： H01L33/32
CPC分类号： H01L33/24 , C09K11/025 , C09K11/642 , H01L33/08
摘要： A light emitting device includes a pair of electrodes facing to each other and a phosphor layer which is sandwiched between the pair of electrodes and includes phosphor particles placed therein. The phosphor particles include an n-type nitride semiconductor part and a p-type nitride semiconductor part, the n-type nitride semiconductor part and the p-type nitride semiconductor part are made of respective single crystals having wurtzite-type crystal structures having c axes parallel with each other, and the phosphor particles include an insulation layer provided to overlie one end surface out of their end surfaces perpendicular to the c axes.
摘要翻译： 发光器件包括彼此面对的一对电极和夹在一对电极之间并且包括放置在其中的荧光体颗粒的荧光体层。 荧光体颗粒包括n型氮化物半导体部件和p型氮化物半导体部件，n型氮化物半导体部件和p型氮化物半导体部件由具有c轴的纤锌矿型晶体结构的各自的单晶制成 彼此平行，并且荧光体颗粒包括设置成覆盖垂直于c轴的端表面之外的一个端面的绝缘层。
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公开(公告)号：US08309985B2
公开(公告)日：2012-11-13
申请号：US13061052
申请日：2009-02-24
IPC分类号： H01L33/32
摘要： A light emitting device is provided with: a pair of an anode and a cathode that are opposed to each other; and a phosphor layer, composed of a plurality of phosphor particles, that is sandwiched between the paired anode and cathode, from direction that is perpendicular to main surfaces of the anode and the cathode, and in this structure, each phosphor particle is a nitride semiconductor phosphor particle having a wurtzite crystal structure that contains an n-type nitride semiconductor portion and a p-type nitride semiconductor portion, with the n-type nitride semiconductor portion being made in contact with the cathode and the p-type nitride semiconductor portion being made in contact with the anode, and the n-type nitride semiconductor portion and the p-type nitride semiconductor portion have the common c-axe in the respective crystal structures thereof made in parallel with each other, with the n-type nitride semiconductor portion and the p-type nitride semiconductor portion being made in contact with each other on a plane in parallel with the c-axe.
摘要翻译： 发光器件设置有：一对彼此相对的阳极和阴极; 以及由垂直于阳极和阴极的主表面的方向夹在一对阳极和阴极之间的由多个荧光体颗粒组成的荧光体层，并且在该结构中，每个荧光体颗粒是氮化物半导体 具有含有n型氮化物半导体部分和p型氮化物半导体部分的纤锌矿型晶体结构的荧光体颗粒，其中使n型氮化物半导体部分与阴极接触并且p型氮化物半导体部分被制成 与n型氮化物半导体部分和n型氮化物半导体部分和n型氮化物半导体部分和/或p型氮化物半导体部分在其各自的晶体结构中具有共同的c-ax， p型氮化物半导体部分在与c-ax平行的平面上彼此接触。
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公开(公告)号：US20100314639A1
公开(公告)日：2010-12-16
申请号：US12918733
申请日：2009-02-19
CPC分类号： C09K11/0883 , C09K11/62 , H01L33/18 , H01L33/504 , H01L51/5012
摘要： The light emitting device (10) of the present invention is provided with a light emitting layer (13), and a pair of electrodes (12 and 14) for injecting electric current into the light emitting layer (13). The light emitting layer (13) includes GaN-based semiconductor particles (21). The light emitting device (10) of the present invention is provided further with a light absorber for absorbing at least part of the light with a wavelength of 470 nm to 800 nm. The light absorber is, for example, a light absorption film (19) provided on at least a part of the surface of each of the GaN-based semiconductor particles (18). Further, the light absorber may be light absorption particles dispersed in the light emitting layer, or may be a light absorption layer disposed on the light exit side with respect to the light emitting layer.
摘要翻译： 本发明的发光器件（10）具有发光层（13）和用于将电流注入到发光层（13）中的一对电极（12和14）。 发光层（13）包括GaN基半导体颗粒（21）。 本发明的发光器件（10）还具有用于吸收波长为470nm至800nm的至少一部分光的光吸收体。 光吸收体例如是设置在各GaN基半导体粒子（18）的表面的至少一部分上的光吸收膜（19）。 此外，光吸收剂可以是分散在发光层中的光吸收颗粒，或者可以是相对于发光层设置在光出射侧的光吸收层。
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