PIEZOELECTRIC LAMINATE AND PIEZOELECTRIC ELEMENT

    公开(公告)号:US20250098542A1

    公开(公告)日:2025-03-20

    申请号:US18805550

    申请日:2024-08-15

    Abstract: A piezoelectric laminate comprise: a substrate; and a lower electrode layer, a seed layer, and a piezoelectric film, in which the piezoelectric film contains, as a main component, a first perovskite-type oxide containing Pb, Zr, Ti, and Nb, the seed layer contains, as a main component, a second perovskite-type oxide that is lattice-matched with the first perovskite-type oxide, and in a crystal grain size distribution acquired by an electron back scattered diffraction method, a proportion of crystal grains having a grain size of 100 nm or less is 15% or less in the piezoelectric film, and, the piezoelectric film satisfies the following expressions: |Ec++Ec− |

    PIEZOELECTRIC ELEMENT AND ACTUATOR
    22.
    发明公开

    公开(公告)号:US20240114793A1

    公开(公告)日:2024-04-04

    申请号:US18458124

    申请日:2023-08-29

    CPC classification number: H10N30/03 H10N30/05 H10N30/1071 H10N30/87

    Abstract: A piezoelectric element includes a substrate; and a first electrode, a first piezoelectric film, a second electrode, a second piezoelectric film, and a third electrode which are provided on the substrate in this order, in which both the first piezoelectric film and the second piezoelectric film contain PZT having a metal element M doped thereto, as a main component, one piezoelectric film of the first piezoelectric film and the second piezoelectric film has a spontaneous polarization aligned in a film thickness direction, and in a case where in a hysteresis curve showing polarization-voltage characteristics of the one piezoelectric film, a coercive voltage Vcf+ on a positive side and a coercive voltage Vcf− on a negative side, and in polarization-voltage characteristics of the other piezoelectric film, a coercive voltage Vcr+ on a positive side and a coercive voltage Vcr− on a negative sid, |Vcr++Vcr−|

    SUBSTRATE WITH A PIEZOELECTRIC FILM AND PIEZOELECTRIC ELEMENT

    公开(公告)号:US20230263066A1

    公开(公告)日:2023-08-17

    申请号:US18191490

    申请日:2023-03-28

    Inventor: Seigo NAKAMURA

    CPC classification number: H10N30/8554 H10N30/878

    Abstract: There are provided a substrate with a piezoelectric film and a piezoelectric element, including on a substrate in the following order, a lower electrode layer and a piezoelectric film, in which in a case where B is denoted as a B site element in a perovskite-type structure, the piezoelectric film includes, a first region containing a perovskite-type oxide represented by General Formula (1), PbδBO3 (1), here 1≤δ≤1.5, and a second region consisting of the same elements as elements in the first region and containing an oxide represented by General Formula (2), PbαBO3 (2), here δ/3≤α

    PIEZOELECTRIC LAMINATE AND PIEZOELECTRIC ELEMENT

    公开(公告)号:US20230095101A1

    公开(公告)日:2023-03-30

    申请号:US17898688

    申请日:2022-08-30

    Abstract: A piezoelectric laminate and a piezoelectric element have, on a substrate in the following order, a lower electrode layer, and a piezoelectric film containing a perovskite-type oxide. The lower electrode layer includes a first layer arranged in a state of being in contact with the substrate and includes a second layer arranged in a state of being in contact with the piezoelectric film, the first layer contains Ti or TiW as a main component, the second layer is a uniaxial alignment film which contains Ir as a main component and in which the Ir is aligned in a (111) plane, and a half width at half maximum of an X-ray diffraction peak from the (111) plane is 0.3° or more.

    OPTICAL THIN FILM, OPTICAL ELEMENT, AND OPTICAL SYSTEM

    公开(公告)号:US20200348451A1

    公开(公告)日:2020-11-05

    申请号:US16929100

    申请日:2020-07-14

    Abstract: The optical thin film is provided on a substrate and includes, in order, from the substrate side, an interlayer, a silver-containing metal layer, and a dielectric layer, in which an anchor region including an oxide of an anchor metal is provided in an interface region of the silver-containing metal layer on a side close to the interlayer, a cap region including an oxide of the anchor metal is provided in an interface region of the silver-containing metal layer on a side close to the dielectric layer, a film thickness of the silver-containing metal layer is 6 nm or less, the silver-containing metal layer contains a high standard electrode potential metal, and a peak position of a concentration distribution of the high standard electrode potential metal in a film thickness direction of the silver-containing metal layer is positioned closer to the interlayer than a peak position of a silver concentration distribution.

    ANTIREFLECTION FILM, OPTICAL ELEMENT, AND OPTICAL SYSTEM

    公开(公告)号:US20200209436A1

    公开(公告)日:2020-07-02

    申请号:US16813703

    申请日:2020-03-09

    Abstract: An antireflection film is provided on a substrate and includes an interlayer, a silver-containing metal layer containing silver, and a dielectric layer, which are laminated in this order on a side of a substrate, in which the interlayer is a multilayer film having at least two layers in which a layer of high refractive index having a relatively high refractive index and a layer of lower refractive index having a relatively low refractive index are alternately laminated, the dielectric layer has a surface exposed to air, and the dielectric layer is a multilayer film including a silicon-containing oxide layer, a magnesium fluoride layer, and an adhesion layer provided between the silicon-containing oxide layer and the magnesium fluoride layer and configured to increase adhesiveness between the silicon-containing oxide layer and the magnesium fluoride layer.

    MANUFACTURING DEVICE OF ORGANIC SEMICONDUCTOR FILM

    公开(公告)号:US20180326447A1

    公开(公告)日:2018-11-15

    申请号:US16041769

    申请日:2018-07-21

    Abstract: A device for manufacturing an organic semiconductor film, including a coating member disposed to face a substrate surface while spaced therefrom for forming the film, and forming a liquid reservoir of an organic semiconductor solution between the coating member and the substrate; a supply portion that supplies the solution; and a cover portion that covers at least a crystal growth portion of the solution. The cover portion includes a guide that guides a deposit formed of an evaporated solvent of the solution to a film-unformed region of the organic semiconductor film. While the solution is supplied between the coating member and the substrate surface by the supply portion, the coating member is moved in a first direction parallel to the substrate surface in a state of being in contact with the solution, to form the film with the crystal growth portion as a starting point.

    GAS BARRIER FILM
    29.
    发明申请
    GAS BARRIER FILM 审中-公开
    气体阻隔膜

    公开(公告)号:US20150050480A1

    公开(公告)日:2015-02-19

    申请号:US14498300

    申请日:2014-09-26

    Abstract: The present invention provides, as gas barrier film having improved adhesiveness between a base material and a barrier laminate, a gas barrier film comprising a plastic film, an organic layer and an inorganic layer in this order, the gas barrier film having an aluminium compound layer containing one or more compounds selected from the group consisting of aluminium oxide, aluminium nitride and aluminium carbide between the plastic film and the organic layer; the plastic film and the aluminium compound layer, and the aluminium compound layer and the organic layer being directly in contact to each other respectively; the thickness of the aluminium compound layer being 40 nm or less; and the organic layer being a layer formed of a composition containing a polymerizable compound and a phosphate compound.

    Abstract translation: 本发明提供了具有改善的基材和阻挡层叠体之间的粘合性的阻气膜,所述阻气膜依次包括塑料膜,有机层和无机层,所述阻气膜具有铝化合物层 在塑料膜和有机层之间含有一种或多种选自氧化铝,氮化铝和碳化铝的化合物; 塑料膜和铝化合物层,铝化合物层和有机层分别直接接触; 铝化合物层的厚度为40nm以下; 有机层是由含有聚合性化合物和磷酸酯化合物的组合物形成的层。

    GAS BARRIER FILM
    30.
    发明申请
    GAS BARRIER FILM 审中-公开
    气体阻隔膜

    公开(公告)号:US20150050479A1

    公开(公告)日:2015-02-19

    申请号:US14498268

    申请日:2014-09-26

    Abstract: The present invention provides, as gas barrier film having improved adhesiveness between a base material and a barrier laminate, a gas barrier film including a plastic film, an organic layer and an inorganic layer in this order, the gas barrier film having a silicon compound layer including one or more compounds selected from the group consisting of silicon oxide, silicon nitride and silicon carbide between the plastic film and the organic layer; the plastic film and the silicon compound layer, and the silicon compound layer and the organic layer being directly in contact to each other respectively; the thickness of the silicon compound layer being 40 nm or less; the organic layer being a layer formed of a composition containing a polymerizable compound and a silane coupling agent; and the thickness of the inorganic layer being larger than the thickness of the silicon compound layer.

    Abstract translation: 本发明提供作为具有改善的基材与阻隔层叠体之间的粘合性的阻气膜,具有包含塑料膜,有机层和无机层的阻气膜,阻气膜具有硅化合物层 包括在塑料膜和有机层之间的一种或多种选自氧化硅,氮化硅和碳化硅的化合物; 塑料膜和硅化合物层,硅化合物层和有机层分别直接接触; 硅化合物层的厚度为40nm以下; 有机层是由含有可聚合化合物和硅烷偶联剂的组合物形成的层; 无机层的厚度大于硅化合物层的厚度。

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