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公开(公告)号：US20250098542A1
公开(公告)日：2025-03-20
申请号：US18805550
申请日：2024-08-15
Applicant: FUJIFILM CORPORATION
Inventor： Hiroyuki KOBAYASHI , Seigo NAKAMURA
Abstract: A piezoelectric laminate comprise: a substrate; and a lower electrode layer, a seed layer, and a piezoelectric film, in which the piezoelectric film contains, as a main component, a first perovskite-type oxide containing Pb, Zr, Ti, and Nb, the seed layer contains, as a main component, a second perovskite-type oxide that is lattice-matched with the first perovskite-type oxide, and in a crystal grain size distribution acquired by an electron back scattered diffraction method, a proportion of crystal grains having a grain size of 100 nm or less is 15% or less in the piezoelectric film, and, the piezoelectric film satisfies the following expressions: |Ec++Ec− |
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公开(公告)号：US20240114793A1
公开(公告)日：2024-04-04
申请号：US18458124
申请日：2023-08-29
Applicant: FUJIFILM CORPORATION
Inventor： Hiroyuki KOBAYASHI , Seigo NAKAMURA , Shinya SUGIMOTO , Tsutomu SASAKI
CPC classification number: H10N30/03 , H10N30/05 , H10N30/1071 , H10N30/87
Abstract: A piezoelectric element includes a substrate; and a first electrode, a first piezoelectric film, a second electrode, a second piezoelectric film, and a third electrode which are provided on the substrate in this order, in which both the first piezoelectric film and the second piezoelectric film contain PZT having a metal element M doped thereto, as a main component, one piezoelectric film of the first piezoelectric film and the second piezoelectric film has a spontaneous polarization aligned in a film thickness direction, and in a case where in a hysteresis curve showing polarization-voltage characteristics of the one piezoelectric film, a coercive voltage Vcf+ on a positive side and a coercive voltage Vcf− on a negative side, and in polarization-voltage characteristics of the other piezoelectric film, a coercive voltage Vcr+ on a positive side and a coercive voltage Vcr− on a negative sid, |Vcr++Vcr−|
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公开(公告)号：US20230263066A1
公开(公告)日：2023-08-17
申请号：US18191490
申请日：2023-03-28
Applicant: FUJIFILM Corporation
Inventor： Seigo NAKAMURA
IPC: H10N30/853 , H10N30/87
CPC classification number: H10N30/8554 , H10N30/878
Abstract: There are provided a substrate with a piezoelectric film and a piezoelectric element, including on a substrate in the following order, a lower electrode layer and a piezoelectric film, in which in a case where B is denoted as a B site element in a perovskite-type structure, the piezoelectric film includes, a first region containing a perovskite-type oxide represented by General Formula (1), PbδBO3 (1), here 1≤δ≤1.5, and a second region consisting of the same elements as elements in the first region and containing an oxide represented by General Formula (2), PbαBO3 (2), here δ/3≤α
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公开(公告)号：US20230095101A1
公开(公告)日：2023-03-30
申请号：US17898688
申请日：2022-08-30
Applicant: FUJIFILM Corporation
Inventor： Hiroyuki KOBAYASHI , Seigo NAKAMURA
IPC: H01L41/18 , H01L41/047 , H01L41/083
Abstract: A piezoelectric laminate and a piezoelectric element have, on a substrate in the following order, a lower electrode layer, and a piezoelectric film containing a perovskite-type oxide. The lower electrode layer includes a first layer arranged in a state of being in contact with the substrate and includes a second layer arranged in a state of being in contact with the piezoelectric film, the first layer contains Ti or TiW as a main component, the second layer is a uniaxial alignment film which contains Ir as a main component and in which the Ir is aligned in a (111) plane, and a half width at half maximum of an X-ray diffraction peak from the (111) plane is 0.3° or more.
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公开(公告)号：US20200348451A1
公开(公告)日：2020-11-05
申请号：US16929100
申请日：2020-07-14
Applicant: FUJIFILM CORPORATION
Inventor： Kenichi UMEDA , Seigo NAKAMURA , Tatsuya YOSHIHIRO , Yuichiro ITAI
Abstract: The optical thin film is provided on a substrate and includes, in order, from the substrate side, an interlayer, a silver-containing metal layer, and a dielectric layer, in which an anchor region including an oxide of an anchor metal is provided in an interface region of the silver-containing metal layer on a side close to the interlayer, a cap region including an oxide of the anchor metal is provided in an interface region of the silver-containing metal layer on a side close to the dielectric layer, a film thickness of the silver-containing metal layer is 6 nm or less, the silver-containing metal layer contains a high standard electrode potential metal, and a peak position of a concentration distribution of the high standard electrode potential metal in a film thickness direction of the silver-containing metal layer is positioned closer to the interlayer than a peak position of a silver concentration distribution.
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Patent Agency Ranking
公开(公告)号：US20200209436A1
公开(公告)日：2020-07-02
申请号：US16813703
申请日：2020-03-09
Applicant: FUJIFILM Corporation
Inventor： Seigo NAKAMURA , Tatsuya YOSHIHIRO , Kenichi UMEDA , Yuichiro ITAI
Abstract: An antireflection film is provided on a substrate and includes an interlayer, a silver-containing metal layer containing silver, and a dielectric layer, which are laminated in this order on a side of a substrate, in which the interlayer is a multilayer film having at least two layers in which a layer of high refractive index having a relatively high refractive index and a layer of lower refractive index having a relatively low refractive index are alternately laminated, the dielectric layer has a surface exposed to air, and the dielectric layer is a multilayer film including a silicon-containing oxide layer, a magnesium fluoride layer, and an adhesion layer provided between the silicon-containing oxide layer and the magnesium fluoride layer and configured to increase adhesiveness between the silicon-containing oxide layer and the magnesium fluoride layer.
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公开(公告)号：US20180331289A1
公开(公告)日：2018-11-15
申请号：US16041766
申请日：2018-07-21
Applicant: FUJIFILM Corporation , THE UNIVERSITY OF TOKYO
Inventor： Seigo NAKAMURA , Yoshiki MAEHARA , Yuichiro ITAI , Yoshihisa USAMI , Junichi TAKEYA
CPC classification number: H01L51/0003 , B05C11/045 , H01L29/786 , H01L51/05 , H01L51/0512 , H01L51/105
Abstract: A method of manufacturing an organic semiconductor film, including a step of moving a coating blade surface positioned to face a substrate surface in a first direction parallel to the substrate surface, while in contact with an organic semiconductor solution supplied to a portion between the blade surface and the substrate surface to form the organic semiconductor film in the first direction. The coating blade is disposed to have first and second gaps having different separation gap sizes with the substrate surface in a region where the blade surface and the organic semiconductor solution are in contact. The first gap is positioned on an upstream side of the first direction and the second gap, which is smaller than the first gap, is provided on a downstream side. A second gap size is a minimum distance between the substrate surface and the blade surface and is 40 μm or less.
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公开(公告)号：US20180326447A1
公开(公告)日：2018-11-15
申请号：US16041769
申请日：2018-07-21
Applicant: FUJIFILM Corporation , THE UNIVERSITY OF TOKYO
Inventor： Seigo NAKAMURA , Yoshiki MAEHARA , Yuichiro ITAI , Yoshihisa USAMI , Junichi TAKEYA
Abstract: A device for manufacturing an organic semiconductor film, including a coating member disposed to face a substrate surface while spaced therefrom for forming the film, and forming a liquid reservoir of an organic semiconductor solution between the coating member and the substrate; a supply portion that supplies the solution; and a cover portion that covers at least a crystal growth portion of the solution. The cover portion includes a guide that guides a deposit formed of an evaporated solvent of the solution to a film-unformed region of the organic semiconductor film. While the solution is supplied between the coating member and the substrate surface by the supply portion, the coating member is moved in a first direction parallel to the substrate surface in a state of being in contact with the solution, to form the film with the crystal growth portion as a starting point.
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公开(公告)号：US20150050480A1
公开(公告)日：2015-02-19
申请号：US14498300
申请日：2014-09-26
Applicant: FUJIFILM Corporation
Inventor： Shinya SUZUKI , Seigo NAKAMURA
CPC classification number: C23C16/403 , B29C39/146 , C23C16/34 , Y10T428/2495 , Y10T428/24975
Abstract: The present invention provides, as gas barrier film having improved adhesiveness between a base material and a barrier laminate, a gas barrier film comprising a plastic film, an organic layer and an inorganic layer in this order, the gas barrier film having an aluminium compound layer containing one or more compounds selected from the group consisting of aluminium oxide, aluminium nitride and aluminium carbide between the plastic film and the organic layer; the plastic film and the aluminium compound layer, and the aluminium compound layer and the organic layer being directly in contact to each other respectively; the thickness of the aluminium compound layer being 40 nm or less; and the organic layer being a layer formed of a composition containing a polymerizable compound and a phosphate compound.
Abstract translation: 本发明提供了具有改善的基材和阻挡层叠体之间的粘合性的阻气膜，所述阻气膜依次包括塑料膜，有机层和无机层，所述阻气膜具有铝化合物层 在塑料膜和有机层之间含有一种或多种选自氧化铝，氮化铝和碳化铝的化合物; 塑料膜和铝化合物层，铝化合物层和有机层分别直接接触; 铝化合物层的厚度为40nm以下; 有机层是由含有聚合性化合物和磷酸酯化合物的组合物形成的层。
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公开(公告)号：US20150050479A1
公开(公告)日：2015-02-19
申请号：US14498268
申请日：2014-09-26
Applicant: FUJIFILM Corporation
Inventor： Seigo NAKAMURA , Shinya SUZUKI
CPC classification number: C23C16/345 , B05D7/04 , B05D7/54 , C23C16/401 , Y10T428/2495 , Y10T428/24975
Abstract: The present invention provides, as gas barrier film having improved adhesiveness between a base material and a barrier laminate, a gas barrier film including a plastic film, an organic layer and an inorganic layer in this order, the gas barrier film having a silicon compound layer including one or more compounds selected from the group consisting of silicon oxide, silicon nitride and silicon carbide between the plastic film and the organic layer; the plastic film and the silicon compound layer, and the silicon compound layer and the organic layer being directly in contact to each other respectively; the thickness of the silicon compound layer being 40 nm or less; the organic layer being a layer formed of a composition containing a polymerizable compound and a silane coupling agent; and the thickness of the inorganic layer being larger than the thickness of the silicon compound layer.
Abstract translation: 本发明提供作为具有改善的基材与阻隔层叠体之间的粘合性的阻气膜，具有包含塑料膜，有机层和无机层的阻气膜，阻气膜具有硅化合物层 包括在塑料膜和有机层之间的一种或多种选自氧化硅，氮化硅和碳化硅的化合物; 塑料膜和硅化合物层，硅化合物层和有机层分别直接接触; 硅化合物层的厚度为40nm以下; 有机层是由含有可聚合化合物和硅烷偶联剂的组合物形成的层; 无机层的厚度大于硅化合物层的厚度。
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