公开(公告)号：US07947158B2

公开(公告)日：2011-05-24

申请号：US12567279

申请日：2009-09-25

申请人： Helge Hartz ,  Markus Nopper ,  Axel Preusse

发明人： Helge Hartz ,  Markus Nopper ,  Axel Preusse

IPC分类号： C25D21/06 ,  C25D21/18 ,  B01D19/00

CPC分类号： C25D21/04 ,  C25D5/08 ,  C25D17/02 ,  H01L21/2885

摘要： The present invention is directed to methods and apparatuses for removing bubbles from a process liquid. The process liquid can comprise a plating solution used in a plating tool. The process liquid is supplied to a tank. A plurality of streams of the process liquid are directed towards a surface of the process liquid from below. This can be done by feeding the process liquid to a flow distributor comprising a plurality of openings providing flow communication between an inner volume of the flow distributor and a main volume of the tank. Before leaving the tank through an outlet, the process liquid flows through a flow barrier.

摘要翻译： 本发明涉及从处理液中除去气泡的方法和装置。 处理液体可以包括用于电镀工具中的电镀液。 将处理液体供给到罐中。 处理液体的多个流从下方引导到处理液体的表面。 这可以通过将处理液体供给到包括多个开口的流量分配器来实现，该多个开口提供流量分配器的内部容积与罐的主体积之间的流动连通。 在离开水箱通过出口之前，工艺液体流过流动屏障。

公开(公告)号：US07476552B2

公开(公告)日：2009-01-13

申请号：US11247369

申请日：2005-10-11

申请人： Axel Preusse ,  Uwe Gunter Stoeckgen ,  Markus Nopper

发明人： Axel Preusse ,  Uwe Gunter Stoeckgen ,  Markus Nopper

IPC分类号： H01L21/00

CPC分类号： H01L21/67046 ,  H01L21/02074 ,  H01L21/02079 ,  H01L21/32134 ,  H01L21/6708 ,  H01L21/76849

摘要： The present invention allows correcting malfunctions occurring in the formation of a cap layer on an electrical element in a semiconductor substrate. It is detected whether a malfunction occurred in the formation of the cap layer. If a malfunction in the formation of the cap layer was detected, a rework procedure is performed. The rework procedure can comprise exposing the substrate to a first acid and a second acid.

摘要翻译： 本发明允许校正在半导体衬底的电气元件上形成覆盖层所产生的故障。 检测在盖层的形成中是否发生故障。 如果检测到形成盖层的故障，则执行返工过程。 返工过程可以包括将基底暴露于第一种酸和第二种酸。

公开(公告)号：US07375031B2

公开(公告)日：2008-05-20

申请号：US11292537

申请日：2005-12-02

申请人： Axel Preusse ,  Markus Keil ,  Wolfgang Buchholtz ,  Petra Hetzer ,  Elvira Buchholtz

发明人： Axel Preusse ,  Markus Keil ,  Wolfgang Buchholtz ,  Petra Hetzer ,  Elvira Buchholtz

IPC分类号： H01L21/44

CPC分类号： H01L21/76886 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： By improving the purity of metal lines and the crystalline structure, the overall performance of metal lines, especially of highly scaled copper-based semiconductor devices, may be enhanced. The modification of the crystalline structure of the metal lines may be performed by a heat treatment generating locally restricted heating zones, which are scanned along the length direction of the metal lines, and/or a heat treatment comprising a heating step in a vacuum ambient followed by a heating step in a reducing ambient.

摘要翻译： 通过提高金属线的纯度和晶体结构，可以提高金属线，特别是高规模铜基半导体器件的整体性能。 金属线的晶体结构的修改可以通过热处理来实现，所述热处理产生沿金属线的长度方向扫描的局部限制的加热区，和/或包括在真空环境中的加热步骤的热处理，随后 通过在还原环境中的加热步骤。

公开(公告)号：US20060246721A1

公开(公告)日：2006-11-02

申请号：US11292537

申请日：2005-12-02

申请人： Axel Preusse ,  Markus Keil ,  Wolfgang Buchholtz

发明人： Axel Preusse ,  Markus Keil ,  Wolfgang Buchholtz

IPC分类号： H01L21/44

CPC分类号： H01L21/76886 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： By improving the purity of metal lines and the crystalline structure, the overall performance of metal lines, especially of highly scaled copper-based semiconductor devices, may be enhanced. The modification of the crystalline structure of the metal lines may be performed by a heat treatment generating locally restricted heating zones, which are scanned along the length direction of the metal lines, and/or a heat treatment comprising a heating step in a vacuum ambient followed by a heating step in a reducing ambient.

摘要翻译： 通过提高金属线的纯度和晶体结构，可以提高金属线，特别是高规模铜基半导体器件的整体性能。 金属线的晶体结构的修改可以通过热处理来实现，所述热处理产生沿金属线的长度方向扫描的局部限制的加热区，和/或包括在真空环境中的加热步骤的热处理，随后 通过在还原环境中的加热步骤。

公开(公告)号：US20060194349A1

公开(公告)日：2006-08-31

申请号：US11247369

申请日：2005-10-11

申请人： Axel Preusse ,  Uwe Stoeckgen ,  Markus Nopper

发明人： Axel Preusse ,  Uwe Stoeckgen ,  Markus Nopper

IPC分类号： H01L21/00

CPC分类号： H01L21/67046 ,  H01L21/02074 ,  H01L21/02079 ,  H01L21/32134 ,  H01L21/6708 ,  H01L21/76849

摘要： The present invention allows correcting malfunctions occurring in the formation of a cap layer on an electrical element in a semiconductor substrate. It is detected whether a malfunction occurred in the formation of the cap layer. If a malfunction in the formation of the cap layer was detected, a rework procedure is performed. The rework procedure can comprise exposing the substrate to a first acid and a second acid.

公开(公告)号：US20060169579A1

公开(公告)日：2006-08-03

申请号：US11201970

申请日：2005-08-11

申请人： Helge Hartz ,  Markus Nopper ,  Axel Preusse

发明人： Helge Hartz ,  Markus Nopper ,  Axel Preusse

IPC分类号： C25B15/08

CPC分类号： C25D21/04 ,  C25D5/08 ,  C25D17/02 ,  H01L21/2885

摘要： The present invention is directed to methods and apparatuses for removing bubbles from a process liquid. The process liquid can comprise a plating solution used in a plating tool. The process liquid is supplied to a tank. A plurality of streams of the process liquid are directed towards a surface of the process liquid from below. This can be done by feeding the process liquid to a flow distributor comprising a plurality of openings providing flow communication between an inner volume of the flow distributor and a main volume of the tank. Before leaving the tank through an outlet, the process liquid flows through a flow barrier.

公开(公告)号：US20050067288A1

公开(公告)日：2005-03-31

申请号：US10859031

申请日：2004-06-01

申请人： Helge Hartz ,  Markus Nopper ,  Axel Preusse

发明人： Helge Hartz ,  Markus Nopper ,  Axel Preusse

IPC分类号： C23C18/16 ,  C25D17/02 ,  C25D21/04 ,  C25D21/12

CPC分类号： C25D21/04 ,  C23C18/1617 ,  C23C18/1619 ,  C25D21/18

摘要： In a storage tank for a process liquid, such as a plating liquid for a plating reactor, one or more barriers are implemented so as to define an inlet area and an outlet area, wherein a fluid flow path is substantially determined by the barrier to significantly suppress the migration of bubbles from the inlet area to the outlet area. In particular embodiments, the introduction of liquid into the storage tank is achieved by inlet lines terminating closely beneath the liquid surface so as to substantially avoid bubble generation and to remove moderately sized bubbles that are conveyed in the inlet lines.

摘要翻译： 在用于处理液体的储罐中，例如用于电镀反应器的电镀液体，实施一个或多个屏障以限定入口区域和出口区域，其中流体流动路径基本上由屏障确定以显着地 抑制气泡从入口区域到出口区域的迁移。 在具体实施方案中，通过在液体表面下方紧密地终止的入口管线来实现将液体引入储存罐中，以便基本上避免产生气泡并去除在入口管线中输送的适度大小的气泡。

公开(公告)号：US06774030B2

公开(公告)日：2004-08-10

申请号：US10304904

申请日：2002-11-26

申请人： Gerd Marxsen ,  Axel Preusse

发明人： Gerd Marxsen ,  Axel Preusse

IPC分类号： H01L214763

CPC分类号： H01L22/26 ,  H01L21/3212

摘要： In a method of in situ controlling the degree of fullness of wide lines in a damascene structure, an optical endpoint detection signal is analyzed so as to determine a time interval of substantially constant signal amplitude. The time interval is then used as a measure of the metal filled in a wide line in a damascene structure. By correlating the length of the time interval to at least one process parameter involved in the formation of the damascene structure, the degree of fullness of lines in the damascene structure may be controlled to maintain within a predefined allowable range.

摘要翻译： 在现场控制大马士革结构中宽线饱和度的方法中，分析光端点检测信号，以便确定基本恒定的信号幅度的时间间隔。 然后将时间间隔用作填充在镶嵌结构中的宽线中的金属的量度。 通过将时间间隔的长度与形成镶嵌结构中涉及的至少一个工艺参数相关联，可以控制镶嵌结构中的线的饱和度以保持在预定的允许范围内。

公开(公告)号：US08883610B2

公开(公告)日：2014-11-11

申请号：US12604703

申请日：2009-10-23

申请人： Robert Seidel ,  Markus Nopper ,  Axel Preusse

发明人： Robert Seidel ,  Markus Nopper ,  Axel Preusse

IPC分类号： H01L21/76 ,  H01L21/768 ,  H01L23/532 ,  H01L23/522

CPC分类号： H01L21/7682 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76852 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： In sophisticated metallization systems, air gaps may be formed on the basis of a self-aligned patterning regime during which the conductive cap material of metal lines may be protected by providing one or more materials, which may subsequently be removed. Consequently, the etch behavior and the electrical characteristics of metal lines during the self-aligned patterning regime may be individually adjusted.

摘要翻译： 在复杂的金属化系统中，可以基于自对准图案化形态来形成气隙，在此期间金属线的导电盖材料可以通过提供一种或多种随后可以被去除的材料来保护。 因此，可以单独地调整在自对准图案化状态期间的金属线的蚀刻行为和电特性。

公开(公告)号：US08389401B2

公开(公告)日：2013-03-05

申请号：US12910979

申请日：2010-10-25

申请人： Robert Seidel ,  Markus Nopper ,  Axel Preusse

发明人： Robert Seidel ,  Markus Nopper ,  Axel Preusse

IPC分类号： H01L23/522 ,  H01L21/768

CPC分类号： H01L23/485 ,  H01L21/76846 ,  H01L21/76865 ,  H01L21/76871 ,  H01L21/76879 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： When forming contact levels of sophisticated semiconductor devices, a superior bottom to top fill behavior may be accomplished by applying an activation material selectively in the lower part of the contact openings and using a selective deposition technique. Consequently, deposition-related irregularities, such as voids, may be efficiently suppressed even for high aspect ratio contact openings.

摘要翻译： 当形成复杂的半导体器件的接触电平时，可以通过在接触开口的下部中选择性地使用激活材料并使用选择性沉积技术来实现优异的底部到顶部的填充行为。 因此，即使对于高纵横比的接触开口，也可以有效地抑制诸如空隙的沉积相关的凹凸。