公开(公告)号：US09431292B1

公开(公告)日：2016-08-30

申请号：US14698948

申请日：2015-04-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： Griselda Bonilla ,  Samuel S. S. Choi ,  Ronald G. Filippi ,  Elbert E. Huang ,  Naftali E. Lustig ,  Andrew H. Simon

IPC: H01L21/4763 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L21/76808 ,  H01L21/76802 ,  H01L21/76831 ,  H01L21/76835 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76873 ,  H01L21/76879 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2221/1036

Abstract: After forming at least one opening in a material stack comprising a sacrificial metal template layer overlying a first dielectric material layer, a sacrificial material portion is deposited in the at least one opening as a place holder for an interconnect structure later formed. Next, the sacrificial metal template layer is removed and a second dielectric material layer is formed to fill voids that were previously occupied by the sacrificial metal template layer. After removing the sacrificial material portion from the at least one opening, an interconnect structure is formed within the at least one opening.

Abstract translation: 在包括覆盖在第一介电材料层上的牺牲金属模板层的材料堆叠中形成至少一个开口之后，牺牲材料部分沉积在所述至少一个开口中，作为稍后形成的互连结构的占位符。 接下来，去除牺牲金属模板层，并且形成第二介电材料层以填充先前被牺牲金属模板层占据的空隙。 在从至少一个开口去除牺牲材料部分之后，在至少一个开口内形成互连结构。

公开(公告)号：US20160181208A1

公开(公告)日：2016-06-23

申请号：US14574430

申请日：2014-12-18

Applicant: GLOBALFOUNDRIES INC.

Inventor： Junjing Bao ,  Griselda Bonilla ,  Samuel S. Choi ,  Ronald G. Filippi ,  Xiao H. Liu ,  Naftali E. Lustig ,  Andrew H. Simon

IPC: H01L23/00 ,  H01L23/48 ,  H01L21/768

CPC classification number: H01L23/562 ,  H01L21/7682 ,  H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An method including forming multiple interconnect levels on top of one another, each level comprising a metal interconnect and a crack stop both embedded in a dielectric layer, and a dielectric capping layer directly on top of the dielectric layer and directly on top of the metal interconnect, the crack stop is an air gap which intersects an interface between the dielectric layer and the dielectric capping layer of each interconnect level, and forming a through substrate via through the multiple interconnect levels adjacent to, but not in direct contact with, the crack stop, the crack stop of each interconnect level is directly between the metal interconnect of each interconnect level and the through substrate via to prevent cracks caused during fabrication from propagating away from the through substrate via and damaging the metal interconnect.

Abstract translation: 一种包括在彼此之上形成多个互连层的方法，每个层包括金属互连和嵌入在电介质层中的裂纹阻挡层，以及直接位于介电层顶部并且直接位于金属互连顶部的电介质覆盖层 裂缝停止是与每个互连层的电介质层和电介质覆盖层之间的界面相交的气隙，并且通过与裂纹停止相邻但不直接接触的多个互连层形成通孔基板通孔 每个互连级别的裂纹停止点直接位于每个互连级别的金属互连和贯通基板通孔之间，以防止制造过程中产生的裂纹从穿过基板传播并损坏金属互连。

公开(公告)号：US09111938B2

公开(公告)日：2015-08-18

申请号：US14538944

申请日：2014-11-12

Applicant: International Business Machines Corporation ,  GLOBALFOUNDRIES Inc. ,  Renesas Electronic Corporation ,  STMICROELECTRONICS, INC.

Inventor： Frieder H. Baumann ,  Tibor Bolom ,  Chao-Kun Hu ,  Koichi Motoyama ,  Chengyu Niu ,  Andrew H. Simon

IPC: H01L23/532 ,  H01L21/768

CPC classification number: H01L23/53238 ,  H01L21/76804 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76873 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A structure having a diffusion barrier positioned adjacent to a sidewall and a bottom of an opening being etched in a layer of dielectric material. The structure also having a metal liner positioned directly on top of the diffusion barrier, a seed layer positioned directly on top of the metal liner, wherein the seed layer is made from a material comprising copper, a copper material positioned directly on top of the seed layer, a metallic cap positioned directly on top of and selective to the copper material, and a capping layer positioned directly on top of and adjacent to the metallic cap.