公开(公告)号：US09565759B2

公开(公告)日：2017-02-07

申请号：US14700850

申请日：2015-04-30

Applicant: GLOBALFOUNDRIES INC.

Inventor： Gareth Hougham ,  Gerard McVicker ,  Xiaoxiong Gu ,  Sung K. Kang ,  Frank R. Libsch ,  Xiao H. Liu

IPC: H05K1/11 ,  H01R43/16 ,  H01R12/70 ,  H01R12/71 ,  H05K3/40 ,  H01R13/24 ,  H05K3/32

CPC classification number: H05K1/11 ,  H01R12/7082 ,  H01R12/714 ,  H01R13/2414 ,  H01R13/2421 ,  H01R43/16 ,  H05K3/326 ,  H05K3/4092 ,  H05K2201/0311 ,  H05K2201/10265 ,  H05K2201/10378 ,  Y10T29/49224 ,  Y10T29/49226

Abstract: A contact structure and assembly for a microelectronics device includes first and second electrically conductive contacts being helically shaped. A carrier element is attached to and positioned between the first and second contacts. The first and second contacts are in electrical communication with each other, and the first and second contacts are in a mirror image relationship with each other. A pair of insulating substrates each include electrically conductive members. A contact point on each of the first and second contacts is attached and electrically communicating to respective electrically conductive members such that the first and second electrically conductive contacts between the pair of insulating substrates form an electrically conductive package. A metal layer on the carrier element provides electrical conductivity through a first opening defined by the carrier element between the first and second portions of the helix shaped contact.

Abstract translation: 用于微电子器件的接触结构和组件包括螺旋形的第一和第二导电触头。 载体元件附接到并定位在第一和第二触点之间。 第一和第二触点彼此电连通，并且第一和第二触点彼此成镜像关系。 一对绝缘基板各自包括导电构件。 每个第一和第二触点上的接触点被附接并与相应的导电构件电连通，使得该对绝缘基板之间的第一和第二导电触点形成导电封装。 载体元件上的金属层通过由载体元件在螺旋形接触件的第一和第二部分之间限定的第一开口提供导电性。

公开(公告)号：US09536842B2

公开(公告)日：2017-01-03

申请号：US14574430

申请日：2014-12-18

Applicant: GLOBALFOUNDRIES INC.

Inventor： Junjing Bao ,  Griselda Bonilla ,  Samuel S. Choi ,  Ronald G. Filippi ,  Xiao H. Liu ,  Naftali E. Lustig ,  Andrew H. Simon

IPC: H01L23/00 ,  H01L23/48 ,  H01L21/768

CPC classification number: H01L23/562 ,  H01L21/7682 ,  H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An method including forming multiple interconnect levels on top of one another, each level comprising a metal interconnect and a crack stop both embedded in a dielectric layer, and a dielectric capping layer directly on top of the dielectric layer and directly on top of the metal interconnect, the crack stop is an air gap which intersects an interface between the dielectric layer and the dielectric capping layer of each interconnect level, and forming a through substrate via through the multiple interconnect levels adjacent to, but not in direct contact with, the crack stop, the crack stop of each interconnect level is directly between the metal interconnect of each interconnect level and the through substrate via to prevent cracks caused during fabrication from propagating away from the through substrate via and damaging the metal interconnect.

Abstract translation: 一种包括在彼此之上形成多个互连层的方法，每个层包括金属互连和嵌入在电介质层中的裂纹阻挡层，以及直接位于介电层顶部并且直接位于金属互连顶部的电介质覆盖层 裂缝停止是与每个互连层的电介质层和电介质覆盖层之间的界面相交的气隙，并且通过与裂纹停止相邻但不直接接触的多个互连层形成通孔基板通孔 每个互连级别的裂纹停止点直接位于每个互连级别的金属互连和贯通基板通孔之间，以防止制造过程中产生的裂纹从穿过基板传播并损坏金属互连。

公开(公告)号：US20160181208A1

公开(公告)日：2016-06-23

申请号：US14574430

申请日：2014-12-18

Applicant: GLOBALFOUNDRIES INC.

Inventor： Junjing Bao ,  Griselda Bonilla ,  Samuel S. Choi ,  Ronald G. Filippi ,  Xiao H. Liu ,  Naftali E. Lustig ,  Andrew H. Simon

IPC: H01L23/00 ,  H01L23/48 ,  H01L21/768

CPC classification number: H01L23/562 ,  H01L21/7682 ,  H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An method including forming multiple interconnect levels on top of one another, each level comprising a metal interconnect and a crack stop both embedded in a dielectric layer, and a dielectric capping layer directly on top of the dielectric layer and directly on top of the metal interconnect, the crack stop is an air gap which intersects an interface between the dielectric layer and the dielectric capping layer of each interconnect level, and forming a through substrate via through the multiple interconnect levels adjacent to, but not in direct contact with, the crack stop, the crack stop of each interconnect level is directly between the metal interconnect of each interconnect level and the through substrate via to prevent cracks caused during fabrication from propagating away from the through substrate via and damaging the metal interconnect.

Abstract translation: 一种包括在彼此之上形成多个互连层的方法，每个层包括金属互连和嵌入在电介质层中的裂纹阻挡层，以及直接位于介电层顶部并且直接位于金属互连顶部的电介质覆盖层 裂缝停止是与每个互连层的电介质层和电介质覆盖层之间的界面相交的气隙，并且通过与裂纹停止相邻但不直接接触的多个互连层形成通孔基板通孔 每个互连级别的裂纹停止点直接位于每个互连级别的金属互连和贯通基板通孔之间，以防止制造过程中产生的裂纹从穿过基板传播并损坏金属互连。