公开(公告)号：US20100323586A1

公开(公告)日：2010-12-23

申请号：US12754846

申请日：2010-04-06

申请人： Georg Pietsch

发明人： Georg Pietsch

IPC分类号： B24B7/10

CPC分类号： C09G1/02 ,  B24B37/044 ,  H01L21/02024

摘要： Semiconductor wafers are polished by a material-removing polishing process A, on both sides of the wafer, using an abrasive-free polishing pad, and a polishing agent which contains abrasive; and a material-removing polishing process B, on at least one side of the wafer, using a polishing pad with a microstructured surface containing no materials which contact the wafer which are harder than the semiconductor material, and a polishing agent is added which has a pH≧ to 10 and contains no substances with abrasive action. Preferred is a method for producing a semiconductor wafer, comprising the following ordered steps: separating a semiconductor single crystal into wafers; simultaneously processing both sides of the wafer by chip-removing processing; polishing the wafer, comprising a polishing process A and a polishing process B; and CMP of one side of the wafer, removing

摘要翻译： 使用无研磨抛光垫的抛光剂和含有研磨剂的抛光剂，通过抛光抛光工艺A在晶片的两侧上抛光半导体晶片。 和抛光抛光工艺B，在晶片的至少一侧使用具有不含与半导体材料相比不接触晶片的材料的微结构化表面的抛光垫，以及抛光剂，其具有 pH≥10，不含有研磨作用的物质。 优选半导体晶片的制造方法，其特征在于，包括以下有序步骤：将半导体单晶分离成晶片; 通过芯片去除处理同时处理晶片的两侧; 抛光晶片，包括抛光工艺A和抛光工艺B; 和CMP晶片的一侧，去除<1μm。

公开(公告)号：US07815489B2

公开(公告)日：2010-10-19

申请号：US11774675

申请日：2007-07-09

申请人： Georg Pietsch ,  Michael Kerstan ,  Heiko aus dem Spring

发明人： Georg Pietsch ,  Michael Kerstan ,  Heiko aus dem Spring

IPC分类号： B24B49/00 ,  B24B51/00

CPC分类号： B24B37/08

摘要： A method for the simultaneous double-side grinding of a plurality of semiconductor wafers, involves a process wherein each semiconductor wafer lies such that it is freely moveable in a cutout of one of a plurality of carriers caused to rotate by means of a rolling apparatus and is thereby moved on a cycloidal trajectory, wherein the semiconductor wafers are machined in material-removing fashion between two rotating working disks, wherein each working disk comprises a working layer containing bonded abrasive. The method according to the invention makes it possible, by means of specific kinematics, to produce extremely planar semiconductor wafers.

摘要翻译： 一种用于同时双面研磨多个半导体晶片的方法涉及一种方法，其中每个半导体晶片位于多个载体之一的切口中可自由移动，通过滚动装置旋转， 由此在摆线轨迹上移动，其中半导体晶片以材料去除方式在两个旋转工作盘之间加工，其中每个工作盘包括含有粘合磨料的工作层。 根据本发明的方法使得可以通过特定的运动学来生产极平面的半导体晶片。

公开(公告)号：US20080233840A1

公开(公告)日：2008-09-25

申请号：US12048267

申请日：2008-03-14

申请人： Georg Pietsch ,  Michael Kerstan ,  Heiko aus dem Spring

发明人： Georg Pietsch ,  Michael Kerstan ,  Heiko aus dem Spring

IPC分类号： B24B1/00

CPC分类号： B24B37/28 ,  B24B37/08 ,  B24B37/12

摘要： Simultaneous double-side grinding of a plurality of semiconductor wafers involves positioning each wafer freely in a cutout of one of plural carriers which rotate on a cycloidal trajectory, wherein the wafers are machined between two rotating ring-shaped working disks, each disk having a working layer of bonded abrasive, wherein the form of the working gap between working layers is determined during grinding and the form of the working area of at least one disk is altered such that the gap has a predetermined form. The wafers, during machining, may temporarily overhang the gap. The carrier is optionally composed only of a first material, or is completely or partly coated with the first material such that during machining only the first material contacts the working layer, and the first material does not reduce the machining ability of the working layer.

摘要翻译： 多个半导体晶片的同时双面研磨包括将每个晶片自由定位在摆线轨迹上旋转的多个载体之一的切口中，其中晶片在两个旋转环形工作盘之间加工，每个盘具有工作 粘合磨料层，其中在研磨期间确定工作层之间的工作间隙的形式，并且改变至少一个盘的工作区域的形式，使得间隙具有预定形式。 在加工期间，晶片可能暂时悬垂在间隙上。 载体任选地仅由第一材料构成，或者完全或部分地涂覆有第一材料，使得在加工期间仅第一材料接触工作层，并且第一材料不降低工作层的加工能力。

公开(公告)号：US20080014839A1

公开(公告)日：2008-01-17

申请号：US11774675

申请日：2007-07-09

申请人： Georg Pietsch ,  Michael Kerstan

发明人： Georg Pietsch ,  Michael Kerstan

IPC分类号： B24B1/00

CPC分类号： B24B37/08

摘要： A method for the simultaneous double-side grinding of a plurality of semiconductor wafers, involves a process wherein each semiconductor wafer lies such that it is freely moveable in a cutout of one of a plurality of carriers caused to rotate by means of a rolling apparatus and is thereby moved on a cycloidal trajectory, wherein the semiconductor wafers are machined in material-removing fashion between two rotating working disks, wherein each working disk comprises a working layer containing bonded abrasive. The method according to the invention makes it possible, by means of specific kinematics, to produce extremely planar semiconductor wafers.

摘要翻译： 一种用于同时双面研磨多个半导体晶片的方法涉及一种方法，其中每个半导体晶片位于多个载体之一的切口中可自由移动，通过滚动装置旋转， 由此在摆线轨迹上移动，其中半导体晶片以材料去除方式在两个旋转工作盘之间加工，其中每个工作盘包括含有粘合磨料的工作层。 根据本发明的方法使得可以通过特定的运动学来生产极平面的半导体晶片。

公开(公告)号：US20050173377A1

公开(公告)日：2005-08-11

申请号：US11051894

申请日：2005-02-04

申请人： Georg Pietsch ,  Michael Kerstan ,  Werner Blaha

发明人： Georg Pietsch ,  Michael Kerstan ,  Werner Blaha

IPC分类号： B24B7/04 ,  B24B7/17 ,  B24B7/22 ,  B24D7/14 ,  H01L21/302 ,  H01L21/304

CPC分类号： H01L21/02013 ,  B24B7/17 ,  B24B7/228 ,  B24D7/14

摘要： The invention relates to a process for producing a semiconductor wafer by double-side grinding of the semiconductor wafer, in which the semiconductor wafer is simultaneously ground on both sides, first by rough-grinding and then by finish-grinding, using a grinding tool. The semiconductor wafer, between the rough-grinding and the finish-grinding, remains positioned in the grinding machine, and the grinding tool continues to apply a substantially constant load during the transition from rough-grinding to finish-grinding. The invention also relates to an apparatus for carrying out the process and to a semiconductor wafer having a local flatness value on a front surface of less than 16 nm in a measurement window of 2 mm×2 mm area and of less than 40 nm in a measurement window of 10 mm×10 mm area.

摘要翻译： 本发明涉及通过半导体晶片的双面研磨制造半导体晶片的方法，其中半导体晶片在两侧同时研磨，首先通过粗磨，然后使用研磨工具进行精磨。 在粗磨和精磨之间的半导体晶片保持定位在研磨机中，并且研磨工具在从粗磨到精磨过渡期间继续施加基本恒定的载荷。 本发明还涉及一种用于在2mm×2mm面积的测量窗口和在测量窗口中小于40nm的小于16nm的前表面上具有局部平坦度值的半导体晶片的实施方法和半导体晶片 10毫米×10毫米的面积。

公开(公告)号：US09539695B2

公开(公告)日：2017-01-10

申请号：US12242963

申请日：2008-10-01

申请人： Georg Pietsch ,  Michael Kerstan ,  Heiko aus dem Spring

发明人： Georg Pietsch ,  Michael Kerstan ,  Heiko aus dem Spring

IPC分类号： B24B37/08 ,  B24B37/28 ,  B24B37/32 ,  B24B37/04

CPC分类号： B24B37/28 ,  B24B37/042 ,  B24B37/08 ,  B24B37/32 ,  Y10T29/49

摘要： Carriers suitable for receiving one or more semiconductor wafers for the machining thereof in lapping, grinding or polishing machines, comprise a core of a first material which has a high stiffness, the core being completely or partly coated with a second material, and also at least one cutout for receiving a semiconductor wafer, wherein the second material is a thermoset polyurethane elastomer having a Shore A hardness of 20-90. The carriers are preferably coated with the second material after chemical surface activation and application of adhesion promoter, and may be used for simultaneous double-side material-removing machining of a plurality of semiconductor wafers.

摘要翻译： 适于接收一个或多个半导体晶片以用于研磨，研磨或抛光机器的加工的载体包括具有高硬度的第一材料的芯，所述芯完全或部分地涂覆有第二材料，并且还至少 一个用于接收半导体晶片的切口，其中所述第二材料是肖氏A硬度为20-90的热固性聚氨酯弹性体。 载体优选在化学表面活化和施加粘合促进剂之后用第二材料涂覆，并且可以用于多个半导体晶片的同时双面材料去除加工。

公开(公告)号：US09199791B2

公开(公告)日：2015-12-01

申请号：US13530358

申请日：2012-06-22

申请人： Georg Pietsch

发明人： Georg Pietsch

IPC分类号： B65G1/127 ,  B65G47/51 ,  H01L21/677 ,  B65G65/00

CPC分类号： B65G1/127 ,  B65G47/5127 ,  B65G65/00 ,  H01L21/67769 ,  H01L21/67778

摘要： A multiplicity of wafer-type workpieces are buffer stored in a device having, a frame, at least two transport elements which each circulate in a vertical direction around an upper and a lower deflection device connected to the frame and are provided, at uniform intervals, with a multiplicity of bearing areas for the horizontal mounting of workpieces, wherein at least one of the deflection devices of each transport element is driven and a free space is situated between the transport elements, a loading position between the upper deflection devices at which a workpiece can be placed onto corresponding bearing areas, and a stationary removal device below the loading position, comprising a horizontal transport device, the first end of which lies within the free space between the transport elements. The invention also relates to a method for buffer-storing a multiplicity of wafer-type workpieces using the abovementioned device.

摘要翻译： 多个晶片型工件被缓冲存储在具有框架的装置中，该框架具有至少两个输送元件，每个输送元件在垂直方向上围绕连接到框架的上偏转装置和下偏转装置循环，并以均匀的间隔设置， 具有用于水平安装工件的多个轴承区域，其中每个运输元件的偏转装置中的至少一个被驱动，并且在运输元件之间设置自由空间，在上偏转装置之间的加载位置处，工件 可以放置在相应的轴承区域上，以及在装载位置下方的固定拆卸装置，包括水平运输装置，其第一端位于运输元件之间的自由空间内。 本发明还涉及使用上述装置缓冲存储多个晶片型工件的方法。

公开(公告)号：US08911281B2

公开(公告)日：2014-12-16

申请号：US13181619

申请日：2011-07-13

申请人： Georg Pietsch ,  Michael Kerstan

发明人： Georg Pietsch ,  Michael Kerstan

IPC分类号： B24B1/00 ,  B24B53/017 ,  B24B37/08 ,  B24B37/28

CPC分类号： B24B53/017 ,  B24B37/08 ,  B24B37/28

摘要： A method for trimming two working layers including bonded abrasive applied on mutually facing sides of an upper and a lower working disk of a grinding apparatus configured for simultaneous double-side processing of flat workpiece includes providing the grinding apparatus including the upper and lower working disks and providing at least one carrier including an outer toothing. The upper and lower working disks are rotated. The carrier is moved between the rotating working disks using a rolling apparatus and the outer toothing on cycloidal paths relative to working layers of the working disks. Loose abrasives are added to a working gap formed between the working layers. A carrier, without workpieces inserted therein, is moved in the working gap so as to effect material removal from the working layers.

摘要翻译： 一种用于修整两个工作层的方法，包括施加在平面工件的同时双面加工的研磨装置的上下工作盘的相互面对的侧面上的粘结磨料，包括提供包括上下工作盘和 提供至少一个包括外齿的载体。 上下工作盘旋转。 载体使用滚动装置在旋转的工作盘之间移动，并且相对于工作盘的工作层在摆线路径上移动外齿。 将松散的磨料添加到在工作层之间形成的工作间隙中。 没有插入其中的工件的载体在工作间隙中移动，以便从工作层中去除材料。

公开(公告)号：US08795776B2

公开(公告)日：2014-08-05

申请号：US13349639

申请日：2012-01-13

申请人： Georg Pietsch

发明人： Georg Pietsch

IPC分类号： B05D3/12 ,  B24B37/00 ,  H01L21/304

CPC分类号： B24B53/017 ,  B24B37/08 ,  B24B37/245

摘要： A method provides a respective flat working layer on each of two working disks of a double-side processing apparatus including a ring-shaped upper working disk, a ring shaped lower working disk and a rolling apparatus that are rotatably mounted about an axis of symmetry of the double-side processing apparatus. The method includes applying a lower intermediate layer and upper intermediate layer on respective surfaces of the lower and upper working disks. Then, simultaneous leveling of both intermediate layers is performed by moving trimming apparatuses on cycloidal paths over the intermediate layers using the rolling apparatus and the respective outer toothing under pressure and with addition of a cooling lubricant, so as to provide a material removal from the intermediate layers. A lower working layer of uniform thickness is then applied to the lower intermediate layer and an upper working layer of uniform thickness is applied to the upper intermediate layer.

摘要翻译： 一种方法在双面处理装置的两个工作盘中的每一个上提供相应的平坦工作层，该双面处理装置包括环形上工作盘，环形下工作盘和滚动装置，其围绕对称轴可旋转地安装 双面处理装置。 该方法包括在下部和上部工作盘的相应表面上施加下部中间层和上部中间层。 然后，通过使用滚动装置和相应的外部齿轮在压力下移动中间层上的摆线路径上的修剪装置并且添加冷却润滑剂来进行两个中间层的同时调平，以便提供从中间层 层。 然后将下层的均匀厚度的工作层施加到下中间层，并且将均匀厚度的上工作层施加到上中间层。

公开(公告)号：US20120156970A1

公开(公告)日：2012-06-21

申请号：US13313114

申请日：2011-12-07

申请人： Georg Pietsch

发明人： Georg Pietsch

IPC分类号： B24B1/00

CPC分类号： B24B7/17 ,  B24B7/228 ,  B24B37/08 ,  B24B37/28 ,  H01L21/02013 ,  H01L21/02024

摘要： A method for the simultaneous material-removing processing of both sides of at least three semiconductor wafers includes providing a double-side processing apparatus including two rotating ring-shaped working disks and a rolling apparatus. The carriers are arranged in the double-side processing apparatus and the openings are disposed in the carriers so as to satisfy the inequality: R/e·sin(π/N*)−r/e−1≦1.2 where N* denotes a ratio of the round angle and an angle at which adjacent carriers are inserted into the rolling apparatus with the greatest distance with respect to one another, r denotes a radius of each opening for receiving a respective semiconductor wafer, e denotes a radius of a pitch circle around a midpoint of the carrier on which the opening is arranged, and R denotes a radius of the pitch circle on which the carriers move between the working disks by means of the rolling apparatus.

摘要翻译： 至少三个半导体晶片的两侧的同时进行材料去除处理的方法包括提供包括两个旋转环形工作盘和滚动装置的双面处理设备。 载体布置在双面处理装置中，并且开口设置在载体中以满足不等式：R / e·sin（＆pgr; / N *）-r / e-1＆nlE; 1.2其中N *表示 相邻载体相对于彼此以最大距离插入到滚动装置中的角度和角度的比率，r表示用于接收各个半导体晶片的每个开口的半径，e表示间距的半径 围绕其上布置有开口的载体的中点周围，并且R表示载体在工作盘之间借助于滚动装置移动的节圆的半径。