摘要:
A nonvolatile memory array includes floating gates that have an inverted-T shape in cross section along a plane that is perpendicular to the direction along which floating cells are connected together to form a string. Adjacent strings are isolated by shallow trench isolation structures. An array having inverted-T shaped floating gates may be formed in a self-aligned manner.
摘要:
Nanostructure-based charge storage regions are included in non-volatile memory devices and integrated with the fabrication of select gates and peripheral circuitry. One or more nanostructure coatings are applied over a substrate at a memory array area and a peripheral circuitry area. Various processes for removing the nanostructure coating from undesired areas of the substrate, such as target areas for select gates and peripheral transistors, are provided. One or more nanostructure coatings are formed using self-assembly based processes to selectively form nanostructures over active areas of the substrate in one example. Self-assembly permits the formation of discrete lines of nanostructures that are electrically isolated from one another without requiring patterning or etching of the nanostructure coating.
摘要:
Nanostructure-based charge storage regions are included in non-volatile memory devices and integrated with the fabrication of select gates and peripheral circuitry. One or more nanostructure coatings are applied over a substrate at a memory array area and a peripheral circuitry area. Various processes for removing the nanostructure coating from undesired areas of the substrate, such as target areas for select gates and peripheral transistors, are provided. One or more nanostructure coatings are formed using self-assembly based processes to selectively form nanostructures over active areas of the substrate in one example. Self-assembly permits the formation of discrete lines of nanostructures that are electrically isolated from one another without requiring patterning or etching of the nanostructure coating.
摘要:
A method of making a device includes providing a first device level containing first semiconductor rails separated by first insulating features, forming a sacrificial layer over the first device level, patterning the sacrificial layer and the first semiconductor rails in the first device level to form a plurality of second rails extending in a second direction, wherein the plurality of second rails extend at least partially into the first device level and are separated from each other by rail shaped openings which extend at least partially into the first device level, forming second insulating features between the plurality of second rails, removing the sacrificial layer, and forming second semiconductor rails between the second insulating features in a second device level over the first device level. The first semiconductor rails extend in a first direction. The second semiconductor rails extend in the second direction different from the first direction.
摘要:
A non-volatile storage system in which a sidewall insulating layer of a floating gate is significantly thinner than a thickness of a bottom insulating layer, and in which raised source/drain regions are provided. During programming or erasing, tunneling occurs predominantly via the sidewall insulating layer and the raised source/drain regions instead of via the bottom insulating layer. The floating gate may have a uniform width or an inverted T shape. The raised source/drain regions may be epitaxially grown from the substrate, and may include a doped region above an undoped region so that the channel length is effectively extended from beneath the floating gate and up into the undoped regions, so that short channel effects are reduced. The ratio of the thicknesses of the sidewall insulating layer to the bottom insulating layer may be about 0.3 to 0.67.
摘要:
Lithographically-defined spacing is used to define feature sizes during fabrication of semiconductor-based memory devices. Sacrificial features are formed over a substrate at a specified pitch having a line size and a space size defined by a photolithography pattern. Charge storage regions for storage elements are formed in the spaces between adjacent sacrificial features using the lithographically-defined spacing to fix a gate length or dimension of the charge storage regions in a column direction. Unequal line and space sizes at the specified pitch can be used to form feature sizes at less than the minimally resolvable feature size associated with the photolithography process. Larger line sizes can improve line-edge roughness while decreasing the dimension of the charge storage regions in the column direction. Additional charge storage regions for the storage elements can be formed over the charge storage regions so defined, such as by depositing and etching a second charge storage layer to form second charge storage regions having a dimension in the column direction that is less than the gate length of the first charge storage regions.
摘要:
Non-volatile semiconductor memory devices with dual control gate memory cells and methods of forming are provided. A charge storage layer is etched into strips extending across a substrate surface in a row direction with a tunnel dielectric layer therebetween. The resulting strips may be continuous in the row direction or may comprise individual charge storage regions if already divided along their length in the row direction. A second layer of dielectric material is formed along the sidewalls of the strips and over the tunnel dielectric layer in the spaces therebetween. The second layer is etched into regions overlaying the tunnel dielectric layer in the spaces between strips. An intermediate dielectric layer is formed along exposed portions of the sidewalls of the strips and over the second dielectric layer in the spaces therebetween. A layer of control gate material is deposited in the spaces between strips. The resulting control gates are separated from the strips by the intermediate dielectric layer and from the substrate surface by the tunnel dielectric layer, the second layer of dielectric material and the intermediate dielectric layer.
摘要:
Semiconductor-based non-volatile memory that includes memory cells with composite charge storage elements is fabricated using an etch stop layer during formation of at least a portion of the storage element. One composite charge storage element suitable for memory applications includes a first charge storage region having a larger gate length or dimension in a column direction than a second charge storage region. While not required, the different regions can be formed of the same or similar materials, such as polysilicon. Etching a second charge storage layer selectively with respect to a first charge storage layer can be performed using an interleaving etch-stop layer. The first charge storage layer is protected from overetching or damage during etching of the second charge storage layer. Consistency in the dimensions of the individual memory cells can be increased.
摘要:
Semiconductor-based non-volatile memory that includes memory cells with composite charge storage elements is fabricated using an etch stop layer during formation of at least a portion of the storage element. One composite charge storage element suitable for memory applications includes a first charge storage region having a larger gate length or dimension in a column direction than a second charge storage region. While not required, the different regions can be formed of the same or similar materials, such as polysilicon. Etching a second charge storage layer selectively with respect to a first charge storage layer can be performed using an interleaving etch-stop layer. The first charge storage layer is protected from overetching or damage during etching of the second charge storage layer. Consistency in the dimensions of the individual memory cells can be increased.
摘要:
A string of nonvolatile memory cells connected in series includes fixed charges located between floating gates and the underlying substrate surface. Such a fixed charge affects distribution of charge carriers in an underlying portion of the substrate and thus affects threshold voltage of a device. A fixed charge layer may extend over source/drain regions also.