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    COMB LASER ARRAYS FOR DWDM INTERCONNECTS
    22.
    发明申请
    COMB LASER ARRAYS FOR DWDM INTERCONNECTS 有权

    公开(公告)号：US20190317286A1

    公开(公告)日：2019-10-17

    申请号：US15953765

    申请日：2018-04-16

    Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

    Inventor： Mir Ashkan Seyedi ,  Marco Fiorentino ,  Geza Kurczveil ,  Raymond G. Beausoleil

    IPC: G02B6/43 ,  H01S3/13 ,  H01S3/131 ,  H01S3/23 ,  G02B6/42

    Abstract: A photonic integrated circuit package includes two arrays or sets of integrated comb laser modules that are bonded to a silicon interposer. Each comb laser of an array has a common or overlapping spectral range, with each laser in the array being optically coupled to a local optical bus. The effective spectral range of the lasers in each array are different, or distinct, as to each array. An optical coupler is disposed within the silicon interposer and is optically coupled to each of the local optical buses. An ASIC (application specific integrated circuit) is bonded to the silicon interposer and provides control and operation of the comb laser modules.

    Hybrid photonic device structures
    26.
    发明授权
    Hybrid photonic device structures 有权

    公开(公告)号：US09927572B1

    公开(公告)日：2018-03-27

    申请号：US15397903

    申请日：2017-01-04

    Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

    Inventor： Geza Kurczveil ,  Di Liang ,  Zhihong Huang ,  Raymond G Beausoleil

    IPC: G02B6/12

    CPC classification number: G02B6/12004 ,  G02B6/12002 ,  G02B2006/12061 ,  G02B2006/12121 ,  G02B2006/12123

    Abstract: Examples include hybrid silicon photonic device structures. Some examples include a method of integrating a photodetector with a photonic device on a silicon wafer to make a hybrid silicon photonic device structure. A dielectric layer is established on the silicon wafer. A pit is formed in a portion of the dielectric layer and the silicon wafer, wherein a bottom of the pit is silicon. A germanium layer is grown in the pit such that a top of the germanium layer is lower than a top of the silicon wafer. The germanium layer comprises the photodetector. A photonic device material that comprises the photonic device is bonded to the silicon wafer without planarization of the silicon wafer.

    PARITY TIME SYMMETRIC DIRECTIONAL COUPLERS WITH PHASE TUNING
    28.
    发明公开
    PARITY TIME SYMMETRIC DIRECTIONAL COUPLERS WITH PHASE TUNING 审中-公开

    公开(公告)号：US20230408852A1

    公开(公告)日：2023-12-21

    申请号：US17843352

    申请日：2022-06-17

    Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

    Inventor： Stanley Cheung ,  Geza Kurczveil ,  Yuan Yuan ,  Xian Xiao ,  Raymond G. Beausoleil

    IPC: G02F1/017

    CPC classification number: G02F1/01708

    Abstract: Implementations disclosed herein provide for devices and methods for obtaining parity time (PT) symmetric directional couplers through improved phase tuning, along with separate optical gain and optical loss tuning. The present disclosure integrates phase tuning and optical gain/loss tuning structures into waveguides of directional couplers disclosed herein. In some examples, directional couplers disclosed herein integrate one or more hybrid metal-oxide-semiconductor capacitors (MOSCAPs) formed by a dielectric layer between two semiconductor layers that provide for phase tuning via plasma dispersion and/or carrier accumulation depending on voltage bias polarity, and one or more optically active medium that provide for optical gain or loss tuning depending on voltage bias polarity.

    Quantum-dot photonics
    30.
    发明授权
    Quantum-dot photonics 有权

    公开(公告)号：US11557877B2

    公开(公告)日：2023-01-17

    申请号：US16489495

    申请日：2017-02-28

    Applicant: Hewlett Packard Enterprise Development LP

    Inventor： Geza Kurczveil ,  Di Liang ,  Raymond G. Beausoleil

    IPC: H01S5/10 ,  G02B6/12 ,  G02B6/122 ,  H01S5/02 ,  H01S5/34

    Abstract: Examples disclosed herein relate to quantum-dot (QD) photonics. In accordance with some of the examples disclosed herein, a QD semiconductor optical amplifier (SOA) may include a silicon substrate and a QD layer above the silicon substrate. The QD layer may include an active gain region to amplify a lasing mode received from an optical signal generator. The QD layer may have a gain recovery time such that the active gain region amplifies the received lasing mode without pattern effects. A waveguide may be included in an upper silicon layer of the silicon substrate. The waveguide may include a mode converter to facilitate optical coupling of the received lasing mode between the QD layer and the waveguide.

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